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    • 2. 发明申请
    • THIN FILM TRANSISTOR HAVING CHALCOGENIDE LAYER AND METHOD OF FABRICATING THE THIN FILM TRANSISTOR
    • 具有氯化铝层的薄膜晶体管和薄膜晶体管的制备方法
    • US20080083924A1
    • 2008-04-10
    • US11869175
    • 2007-10-09
    • Kibong SONGDoo-Hee CHOKyeongam KIMSang LEE
    • Kibong SONGDoo-Hee CHOKyeongam KIMSang LEE
    • H01L31/0272H01L21/12H01L29/04
    • H01L29/78681H01L29/78684H01L31/1136
    • Provided are a thin film transistor (TFT) having a chalcogenide layer and a method of fabricating the TFT. The TFT includes an amorphous chalcogenide layer, a crystalline chalcogenide layer, source and drain electrodes, and a gate electrode. The amorphous chalcogenide layer forms a channel layer. The crystalline chalcogenide layer is formed on both sides of the amorphous layer to form source and drain regions. The source and drain electrodes are formed on both sides of the amorphous chalcogenide layer and connected to the source and drain regions of the crystalline chalcogenide layer, respectively. The gate electrode is formed above or under the channel layer with a gate insulation layer being interposed between the channel layer and the gate electrode. Therefore, the TFT can include an optical TFT structure using the chalcogenide layers as an optical conductive layer and/or an electric TFT providing diode rectification using the chalcogenide layers.
    • 提供了具有硫族化物层的薄膜晶体管(TFT)和制造TFT的方法。 TFT包括无定形硫族化物层,结晶硫族化物层,源极和漏极以及栅电极。 无定形硫族化物层形成通道层。 结晶硫族化物层形成在非晶层的两侧以形成源区和漏区。 源极和漏极分别形成在非晶态硫族化物层的两侧,并分别连接到结晶硫族化物层的源极和漏极区域。 栅电极形成在沟道层的上方或下方,栅极绝缘层插入沟道层和栅电极之间。 因此,TFT可以包括使用硫族化物层作为光导体层的光学TFT结构和/或使用硫族化物层提供二极管整流的电TFT。