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    • 2. 发明授权
    • Semiconductor device capable of testing a transmission line for an impedance calibration code
    • 能够测试用于阻抗校准码的传输线的半导体器件
    • US07994813B2
    • 2011-08-09
    • US12719953
    • 2010-03-09
    • Young-Hoon SohnKwang-Il ParkYong-Gwon JeongSi-Hong Kim
    • Young-Hoon SohnKwang-Il ParkYong-Gwon JeongSi-Hong Kim
    • H03K19/0175
    • H04L25/0278
    • A semiconductor device includes a plurality of pads, where an external reference resistor is connected to a first one of the pads, an impedance calibrating unit configured to generate an impedance calibration code corresponding to an impedance of the reference resistor and output the impedance calibration code to a code transmitting line during a normal operating mode, and an impedance matching unit configured to perform an impedance matching operation in response to the impedance calibration code during the normal operating mode. The impedance calibrating unit is configured to output a test code to the code transmitting line in response to a test signal during a test operating mode. The impedance matching unit is configured to serialize the test code to output the serialized test code to each of the other pads in response to the test signal during the test operating mode.
    • 半导体器件包括多个焊盘,其中外部参考电阻器连接到焊盘的第一焊盘,阻抗校准单元被配置为产生对应于参考电阻器的阻抗的阻抗校准代码,并将阻抗校准代码输出到 在正常操作模式期间的代码传输线,以及阻抗匹配单元,被配置为在正常操作模式期间响应于阻抗校准码执行阻抗匹配操作。 阻抗校准单元被配置为在测试操作模式期间响应于测试信号将测试代码输出到代码传输线。 阻抗匹配单元被配置为串行化测试代码,以在测试操作模式期间响应于测试信号将串行测试代码输出到每个其它焊盘。
    • 3. 发明授权
    • Semiconductor device having output buffer initialization circuit and output buffer initialization method
    • 半导体器件具有输出缓冲器初始化电路和输出缓冲器初始化方法
    • US07656718B2
    • 2010-02-02
    • US11747041
    • 2007-05-10
    • Yong-Gwon Jeong
    • Yong-Gwon Jeong
    • G11C11/00
    • G11C7/1051G11C7/1057G11C7/20
    • A semiconductor device has at least two semiconductor memory devices, each of which includes a memory cell array arranged in a matrix of rows and columns, a peripheral circuit writing data to a cell of the memory cell array and reading out and amplifying the written data, and an output buffer outputting cell data amplified by the peripheral circuit. The output buffer includes an output buffer initialization circuit activating an output buffer reset signal in response to the power up or power down of the semiconductor memory device and deactivating the output buffer reset signal in response to a first command signal output from a controller of the semiconductor memory device, and an output driver generating output data based on a data signal in response to a clock signal, a data enable signal, and the output buffer reset signal.
    • 半导体器件具有至少两个半导体存储器件,每个半导体存储器件包括排列成行和列的矩阵的存储单元阵列,外围电路将数据写入存储单元阵列的单元并读出并放大写入的数据, 以及输出缓冲器,输出由外围电路放大的单元数据。 输出缓冲器包括响应于半导体存储器件的上电或断电而激活输出缓冲器复位信号的输出缓冲器初始化电路,并且响应于从半导体的控制器输出的第一命令信号而去激活输出缓冲器复位信号 存储器件和输出驱动器,其响应于时钟信号,数据使能信号和输出缓冲器复位信号,基于数据信号产生输出数据。
    • 4. 发明申请
    • SEMICONDUCTOR DEVICE HAVING OUTPUT BUFFER INITIALIZATION CIRCUIT AND OUTPUT BUFFER INITIALIZATION METHOD
    • 具有输出缓冲器初始化电路和输出缓冲器初始化方法的半导体器件
    • US20080037334A1
    • 2008-02-14
    • US11747041
    • 2007-05-10
    • Yong-Gwon Jeong
    • Yong-Gwon Jeong
    • G11C7/10
    • G11C7/1051G11C7/1057G11C7/20
    • A semiconductor device has at least two semiconductor memory devices, each of which includes a memory cell array arranged in a matrix of rows and columns, a peripheral circuit writing data to a cell of the memory cell array and reading out and amplifying the written data, and an output buffer outputting cell data amplified by the peripheral circuit. The output buffer includes an output buffer initialization circuit activating an output buffer reset signal in response to the power up or power down of the semiconductor memory device and deactivating the output buffer reset signal in response to a first command signal output from a controller of the semiconductor memory device, and an output driver generating output data based on a data signal in response to a clock signal, a data enable signal, and the output buffer reset signal.
    • 半导体器件具有至少两个半导体存储器件,每个半导体存储器件包括排列成行和列的矩阵的存储单元阵列,外围电路将数据写入存储单元阵列的单元并读出并放大写入的数据, 以及输出缓冲器,输出由外围电路放大的单元数据。 输出缓冲器包括响应于半导体存储器件的上电或断电而激活输出缓冲器复位信号的输出缓冲器初始化电路,并且响应于从半导体的控制器输出的第一命令信号而去激活输出缓冲器复位信号 存储器件和输出驱动器,其响应于时钟信号,数据使能信号和输出缓冲器复位信号,基于数据信号产生输出数据。
    • 5. 发明申请
    • SEMICONDUCTOR DEVICE CAPABLE OF TESTING A TRANSMISSION LINE FOR AN IMPEDANCE CALIBRATION CODE
    • 用于测试用于阻抗校准码的传输线的半导体器件
    • US20100237902A1
    • 2010-09-23
    • US12719953
    • 2010-03-09
    • Young-Hoon SohnKwang-Il ParkYong-Gwon JeongSi-Hong Kim
    • Young-Hoon SohnKwang-Il ParkYong-Gwon JeongSi-Hong Kim
    • H03K19/003G01R35/00
    • H04L25/0278
    • A semiconductor device includes a plurality of pads, where an external reference resistor is connected to a first one of the pads, an impedance calibrating unit configured to generate an impedance calibration code corresponding to an impedance of the reference resistor and output the impedance calibration code to a code transmitting line during a normal operating mode, and an impedance matching unit configured to perform an impedance matching operation in response to the impedance calibration code during the normal operating mode. The impedance calibrating unit is configured to output a test code to the code transmitting line in response to a test signal during a test operating mode. The impedance matching unit is configured to serialize the test code to output the serialized test code to each of the other pads in response to the test signal during the test operating mode.
    • 半导体器件包括多个焊盘,其中外部参考电阻器连接到焊盘的第一焊盘,阻抗校准单元被配置为产生对应于参考电阻器的阻抗的阻抗校准代码,并将阻抗校准代码输出到 在正常操作模式期间的代码传输线,以及阻抗匹配单元,被配置为在正常操作模式期间响应于阻抗校准码执行阻抗匹配操作。 阻抗校准单元被配置为在测试操作模式期间响应于测试信号将测试代码输出到代码传输线。 阻抗匹配单元被配置为串行化测试代码,以在测试操作模式期间响应于测试信号将串行测试代码输出到每个其它焊盘。