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    • 8. 发明授权
    • Nitride semiconductor light emitting device array
    • 氮化物半导体发光元件阵列
    • US08587005B2
    • 2013-11-19
    • US13093469
    • 2011-04-25
    • Sang Ho YoonKyeong Ik Min
    • Sang Ho YoonKyeong Ik Min
    • H01L33/20
    • H01L33/24
    • A nitride semiconductor light emitting device array, which includes a dielectric layer formed on a first conductivity lower nitride semiconductor layer, having a plurality of windows. Each of a plurality of hexagonal pyramid light emission structures is grown from a surface of the first conductivity lower nitride semiconductor layer exposed through each of the windows and onto a peripheral area of the window of the dielectric layer. Each of the hexagonal pyramid light emission structures includes a first conductivity upper nitride semiconductor layer, an active layer and a second conductivity nitride semiconductor layer formed in their order. The windows are disposed in such a triangular arrangement that side surfaces of the adjacent hexagonal pyramid light emission structures face each other. Also, a distance between bases of the adjacent hexagonal pyramid light emission structures is less than 0.3 times an interval between centers of the windows of the adjacent hexagonal pyramid light emission structures.
    • 一种氮化物半导体发光器件阵列,其包括形成在第一导电性低氮化物半导体层上的介电层,具有多个窗口。 多个六边形金字塔发光结构中的每一个从通过每个窗户露出的第一导电性下氮化物半导体层的表面生长到介电层的窗口的外围区域上。 六角锥形发光结构中的每一个包括依次形成的第一导电性上氮化物半导体层,有源层和第二导电氮化物半导体层。 窗口设置成三角形布置,使得相邻的六角锥形发光结构的侧表面彼此面对。 此外,相邻的六角锥形发光结构的基底之间的距离小于相邻六边形金字塔发光结构的窗口的中心之间的间隔的0.3倍。
    • 10. 发明申请
    • NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE ARRAY
    • 氮化物半导体发光器件阵列
    • US20110198625A1
    • 2011-08-18
    • US13093469
    • 2011-04-25
    • Sang Ho YOONKyeong Ik Min
    • Sang Ho YOONKyeong Ik Min
    • H01L33/08
    • H01L33/24
    • A nitride semiconductor light emitting device array, which includes a dielectric layer formed on a first conductivity lower nitride semiconductor layer, having a plurality of windows. Each of a plurality of hexagonal pyramid light emission structures is grown from a surface of the first conductivity lower nitride semiconductor layer exposed through each of the windows and onto a peripheral area of the window of the dielectric layer. Each of the hexagonal pyramid light emission structures includes a first conductivity upper nitride semiconductor layer, an active layer and a second conductivity nitride semiconductor layer formed in their order. The windows are disposed in such a triangular arrangement that side surfaces of the adjacent hexagonal pyramid light emission structures face each other. Also, a distance between bases of the adjacent hexagonal pyramid light emission structures is less than 0.3 times an interval between centers of the windows of the adjacent hexagonal pyramid light emission structures.
    • 一种氮化物半导体发光器件阵列,其包括形成在第一导电性低氮化物半导体层上的介电层,具有多个窗口。 多个六边形金字塔发光结构中的每一个从通过每个窗户露出的第一导电性下氮化物半导体层的表面生长到介电层的窗口的外围区域上。 六角锥形发光结构中的每一个包括依次形成的第一导电性上氮化物半导体层,有源层和第二导电氮化物半导体层。 窗口设置成三角形布置,使得相邻的六角锥形发光结构的侧表面彼此面对。 此外,相邻的六角锥形发光结构的基底之间的距离小于相邻六边形金字塔发光结构的窗口的中心之间的间隔的0.3倍。