专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US07935551B2 Image sensor and method for manufacturing the same 有权
标题翻译：图像传感器及其制造方法
公开(公告)号：US07935551B2
公开(公告)日：2011-05-03
申请号：US11998606
申请日：2007-11-30
申请人： Ki Sik Im , Woo Seok Hyun
发明人： Ki Sik Im , Woo Seok Hyun
IPC分类号： H01L21/00 , H01L31/0232 , H01L31/00 , H01L27/146
CPC分类号： H01L27/14687 , H01L27/14609 , H01L27/14621 , H01L27/14627
摘要： A method for manufacturing a sensor image may include forming a pixel array including a photodiode structure and an insulating film structure in an active area of a semiconductor substrate; forming a metal pad on the insulating film structure; forming a dielectric and/or etch stop film on the metal pad (and optionally over the pixel array); forming a protective layer on the dielectric and/or etch stop film; and forming a pad opening and a pixel opening by etching the protective layer.
摘要翻译：用于制造传感器图像的方法可以包括在半导体衬底的有源区域中形成包括光电二极管结构和绝缘膜结构的像素阵列; 在绝缘膜结构上形成金属焊盘; 在金属焊盘上（并且可选地在像素阵列上）形成介电和/或蚀刻停止膜; 在介电和/或蚀刻停止膜上形成保护层; 以及通过蚀刻保护层形成衬垫开口和像素开口。

2. 发明申请

US20080164499A1 METHOD OF MANUFACTURING CMOS IMAGE SENSOR 审中-公开
标题翻译：制造CMOS图像传感器的方法
公开(公告)号：US20080164499A1
公开(公告)日：2008-07-10
申请号：US11963488
申请日：2007-12-21
申请人： Ki-Sik Im , Woo Seok Hyun
发明人： Ki-Sik Im , Woo Seok Hyun
IPC分类号： H01L31/0232 , H01L21/308
CPC分类号： H01L27/14687 , H01L27/14636 , H01L27/14685
摘要： A method of a CMOS image sensor is disclosed. A method of manufacturing a CMOS image sensor includes forming an epi layer formed over a semiconductor substrate including a pixel region and a peripheral region. At least one oxide film may be formed over the epi layer, including the peripheral region and an upper pad formed therein. A nitride film may be formed over the oxide film. A primary array etching process may be performed with respect to the nitride film using a first photoresist pattern for opening a main pixel region in the pixel region. A secondary array etching process may be performed with respect to the nitride film and the oxide film using a second photoresist pattern for opening the upper pad. The oxide film of the pixel region may be obliquely removed to a predetermined depth. A plurality of color filters and a plurality of micro lenses may be formed over the pixel region after the secondary array etching process.
摘要翻译：公开了一种CMOS图像传感器的方法。制造CMOS图像传感器的方法包括形成在包括像素区域和周边区域的半导体衬底上形成的外延层。可以在外延层上形成至少一个氧化物膜，包括周边区域和形成在其中的上焊盘。可以在氧化物膜上形成氮化物膜。可以使用用于打开像素区域中的主像素区域的第一光致抗蚀剂图案来对氮化物膜执行初级阵列蚀刻工艺。可以使用用于打开上垫的第二光致抗蚀剂图案来对氮化物膜和氧化膜执行二次阵列蚀刻工艺。可以将像素区域的氧化物膜倾斜地去除到预定深度。在二次阵列蚀刻处理之后，可以在像素区域上形成多个滤色器和多个微透镜。

3. 发明申请

US20080150060A1 Image sensor and method for manufacturing the same 有权
标题翻译：图像传感器及其制造方法
公开(公告)号：US20080150060A1
公开(公告)日：2008-06-26
申请号：US11998606
申请日：2007-11-30
申请人： Ki Sik Im , Woo Seok Hyun
发明人： Ki Sik Im , Woo Seok Hyun
IPC分类号： H01L31/00 , H01L21/02
CPC分类号： H01L27/14687 , H01L27/14609 , H01L27/14621 , H01L27/14627
摘要： A method for manufacturing a sensor image may include forming a pixel array including a photodiode structure and an insulating film structure in an active area of a semiconductor substrate; forming a metal pad on the insulating film structure; forming a dielectric and/or etch stop film on the metal pad (and optionally over the pixel array); forming a protective layer on the dielectric and/or etch stop film; and forming a pad opening and a pixel opening by etching the protective layer.
摘要翻译：用于制造传感器图像的方法可以包括在半导体衬底的有源区域中形成包括光电二极管结构和绝缘膜结构的像素阵列; 在绝缘膜结构上形成金属焊盘; 在金属焊盘上（并且可选地在像素阵列上）形成介电和/或蚀刻停止膜; 在介电和/或蚀刻停止膜上形成保护层; 以及通过蚀刻保护层形成衬垫开口和像素开口。

4. 发明授权

US07507595B2 CMOS image sensor and method for fabricating the same 失效
标题翻译： CMOS图像传感器及其制造方法
公开(公告)号：US07507595B2
公开(公告)日：2009-03-24
申请号：US11319730
申请日：2005-12-29
申请人： Woo Seok Hyun
发明人： Woo Seok Hyun
IPC分类号： H01L21/00
CPC分类号： H01L27/14603 , H01L27/1463 , H01L27/14643 , H01L27/14689
摘要： A CMOS image sensor and fabricating method can reduce leakage current of a photodiode reduced by configuring a triangular shape of a photodiode area to minimize an interface contacting the STI or performing deuterium annealing to remove dangling bonds from an interface contacting with oxide. The CMOS image sensor includes a semiconductor substrate, a device isolation layer on the semiconductor substrate, and a plurality of diodes, each having a shape minimizing an area of a boundary contacting with the device isolation layer.
摘要翻译： CMOS图像传感器和制造方法可以通过配置光电二极管区域的三角形形状来减少光电二极管的漏电流，以使接触STI的界面最小化或进行氘退火以从与氧化物接触的界面去除悬挂键。 CMOS图像传感器包括半导体衬底，半导体衬底上的器件隔离层和多个二极管，每个二极管具有最小化与器件隔离层接触的边界的面积的形状。

5. 发明申请

US20070145508A1 CMOS Image Sensor and Method for Manufacturing the Same 审中-公开
标题翻译： CMOS图像传感器及其制造方法
公开(公告)号：US20070145508A1
公开(公告)日：2007-06-28
申请号：US11611309
申请日：2006-12-15
申请人： Woo Seok Hyun
发明人： Woo Seok Hyun
IPC分类号： H01L31/06
CPC分类号： H01L27/14689 , H01L27/14603 , H01L27/14609 , H01L27/14643
摘要： A CMOS image sensor and a fabrication method thereof are provided. The CMOS image sensor includes a semiconductor substrate having an active area and an isolation area; a photodiode area and a transistor area defined on the active area; a plurality of semiconductor patterns formed on the photodiode area; a transistor formed on the transistor area; a first conductive type first diffusion region formed on the photodiode area; a first conductive type second diffusion region formed on the transistor area; and a second conductive type third diffusion region formed on the first diffusion region.
摘要翻译：提供CMOS图像传感器及其制造方法。 CMOS图像传感器包括具有有源区和隔离区的半导体衬底; 光电二极管区域和限定在有源区域上的晶体管区域; 形成在所述光电二极管区域上的多个半导体图案; 晶体管形成在晶体管区域上; 形成在所述光电二极管区域上的第一导电型第一扩散区域; 形成在所述晶体管区域上的第一导电型第二扩散区; 以及形成在第一扩散区上的第二导电型第三扩散区。

6. 发明授权

US07772623B2 CMOS image sensor and method for fabricating the same 失效
标题翻译： CMOS图像传感器及其制造方法
公开(公告)号：US07772623B2
公开(公告)日：2010-08-10
申请号：US12379198
申请日：2009-02-13
申请人： Woo Seok Hyun
发明人： Woo Seok Hyun
IPC分类号： H01L31/062
CPC分类号： H01L27/14603 , H01L27/1463 , H01L27/14643 , H01L27/14689
摘要： A CMOS image sensor and fabricating method can reduce leakage current of a photodiode reduced by configuring a triangular shape of a photodiode area to minimize an interface contacting the STI or performing deuterium annealing to remove dangling bonds from an interface contacting with oxide. The CMOS image sensor includes a semiconductor substrate, a device isolation layer on the semiconductor substrate, and a plurality of diodes, each having a shape minimizing an area of a boundary contacting with the device isolation layer.
摘要翻译： CMOS图像传感器和制造方法可以通过配置光电二极管区域的三角形形状来减少光电二极管的漏电流，以使接触STI的界面最小化或进行氘退火以从与氧化物接触的界面去除悬挂键。 CMOS图像传感器包括半导体衬底，半导体衬底上的器件隔离层和多个二极管，每个二极管具有最小化与器件隔离层接触的边界的面积的形状。

7. 发明申请

US20090146199A1 CMOS image sensor and method for fabricating the same 失效
公开(公告)号：US20090146199A1
公开(公告)日：2009-06-11
申请号：US12379198
申请日：2009-02-13
申请人： Woo Seok Hyun
发明人： Woo Seok Hyun
IPC分类号： H01L31/112
CPC分类号： H01L27/14603 , H01L27/1463 , H01L27/14643 , H01L27/14689
摘要： A CMOS image sensor and fabricating method can reduce leakage current of a photodiode reduced by configuring a triangular shape of a photodiode area to minimize an interface contacting the STI or performing deuterium annealing to remove dangling bonds from an interface contacting with oxide. The CMOS image sensor includes a semiconductor substrate, a device isolation layer on the semiconductor substrate, and a plurality of diodes, each having a shape minimizing an area of a boundary contacting with the device isolation layer.

8. 发明申请

US20070148846A1 Image Sensor and Method of Manufacturing the Same 审中-公开
标题翻译：图像传感器及其制造方法
公开(公告)号：US20070148846A1
公开(公告)日：2007-06-28
申请号：US11611260
申请日：2006-12-15
申请人： Woo Seok Hyun
发明人： Woo Seok Hyun
IPC分类号： H01L21/8238
CPC分类号： H01L27/14645 , H01L27/14621 , H01L27/14627 , H01L27/14685 , H01L27/14689
摘要： A CMOS image sensor and a method of manufacturing the same are provided. The CMOS image sensor includes a semiconductor substrate including a plurality of photodiodes and a plurality of transistors, a first interlayer dielectric formed on the semiconductor substrate, a metal wiring and a second interlayer dielectric formed on the first interlayer dielectric, a plurality of color filter layers formed in the trenches formed in the second interlayer dielectric, and a plurality of micro lenses formed on the plurality of the color filter layers.
摘要翻译：提供CMOS图像传感器及其制造方法。 CMOS图像传感器包括：包括多个光电二极管和多个晶体管的半导体衬底;形成在半导体衬底上的第一层间电介质，形成在第一层间电介质上的金属布线和第二层间电介质;多个滤色器层形成在第二层间电介质中形成的沟槽中，以及形成在多个滤色器层上的多个微透镜。

9. 发明授权

US07422959B2 Method for forming isolation trench in a semiconductor substrate 失效
标题翻译：在半导体衬底中形成隔离沟槽的方法
公开(公告)号：US07422959B2
公开(公告)日：2008-09-09
申请号：US11319228
申请日：2005-12-28
申请人： Woo Seok Hyun
发明人： Woo Seok Hyun
IPC分类号： H01L21/76
CPC分类号： H01L21/76224 , H01L27/1463 , H01L27/14687 , H01L27/14689
摘要： A method for forming an isolation region in a semiconductor device such as a photodiode forms depletion layers at boundary regions between N-type regions of the photodiode and an ion injection layer in which P-type impurity ions are injected. Depletion layers are also formed between the N-type regions of the photodiode and a substrate of P-type semiconductor. Thus, depletion layers minimize a leakage current and eliminate interface defects. Low temperature processes are applied to prevent the impurity ions in the substrate from diffusing undesirably, thereby maximizing the pinning effect of the semiconductor device. The method includes steps of forming a trench region in a substrate; forming an ion injection layer by injecting impurity ions into an inner sidewall of the trench region; and forming an isolation region for a semiconductor device by filling the trench region with an undoped silicate glass film interposing the ion injection layer.
摘要翻译：在诸如光电二极管的半导体器件中形成隔离区域的方法在光电二极管的N型区域和注入有P型杂质离子的离子注入层之间的边界区域处形成耗尽层。消光层也形成在光电二极管的N型区域和P型半导体衬底之间。因此，耗尽层使漏电流最小化并消除界面缺陷。施加低温处理以防止衬底中的杂质离子不期望地扩散，从而最大化半导体器件的钉扎效应。该方法包括在衬底中形成沟槽区域的步骤; 通过将杂质离子注入到所述沟槽区域的内侧壁中而形成离子注入层; 以及通过插入所述离子注入层的未掺杂的硅酸盐玻璃膜填充所述沟槽区域来形成用于半导体器件的隔离区域。

10. 发明申请

US20080173967A1 Image sensor and method for manufacturing the same 审中-公开
标题翻译：图像传感器及其制造方法
公开(公告)号：US20080173967A1
公开(公告)日：2008-07-24
申请号：US12004662
申请日：2007-12-20
申请人： Woo Seok Hyun
发明人： Woo Seok Hyun
IPC分类号： H01L21/768 , H01L31/02
CPC分类号： H01L27/14636 , H01L27/14643 , H01L27/14689
摘要： Disclosed is an image sensor, which includes a dielectric layer on a substrate having a photodiode, a metal interconnection layer on the dielectric layer and an upper insulating layer on the metal interconnection layer. The metal interconnection layer includes a lower barrier layer, a bulk metal layer on the lower barrier layer and an upper barrier layer on the bulk metal layer having a predetermined thickness which is 0.8 to 1.5 times as thick as the lower barrier layer.
摘要翻译：公开了一种图像传感器，其包括在具有光电二极管的基板上的电介质层，介电层上的金属互连层和金属互连层上的上绝缘层。金属互连层包括下阻挡层，下阻挡层上的体金属层和具有预定厚度的本体金属层上的上阻挡层，其厚度为下阻挡层的0.8至1.5倍。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式