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1. 发明授权

US08778083B2 Lateral-flow deposition apparatus and method of depositing film by using the apparatus 有权
标题翻译：侧流沉积装置和使用该装置沉积膜的方法
公开(公告)号：US08778083B2
公开(公告)日：2014-07-15
申请号：US12841139
申请日：2010-07-21
申请人： Ki Jong Kim , Yong Min Yoo , Jung Soo Kim , Hyung Sang Park , Seung Woo Choi , Jeong Ho Lee , Dong Rak Jung
发明人： Ki Jong Kim , Yong Min Yoo , Jung Soo Kim , Hyung Sang Park , Seung Woo Choi , Jeong Ho Lee , Dong Rak Jung
IPC分类号： C23C16/00 , C23C16/46 , C23C16/455 , C23C16/458
CPC分类号： C23C16/45544 , C23C16/45504 , C23C16/4584 , C23C16/466
摘要： A deposition apparatus according to an exemplary embodiment of the present invention is a lateral-flow deposition apparatus in which in which a process gas flows between a surface where a substrate is disposed and the opposite surface, substantially in parallel with the substrate. The lateral-flow deposition apparatus includes: a substrate support that moves up/down and rotates the substrate while supporting the substrate; a reactor cover that defines a reaction chamber by contacting the substrate support; and a substrate support lifter and a substrate support rotator that move the substrate support.
摘要翻译：根据本发明的示例性实施方式的沉积装置是横向流沉积装置，其中处理气体在基板设置的表面与基本上平行于基底的相对表面之间流动。横向流沉积装置包括：支撑基板的基板支撑件，其上下移动并旋转基板; 反应器盖，其通过接触所述基板支撑来限定反应室; 以及基板支撑升降器和移动基板支撑件的基板支撑旋转器。

2. 发明申请

US20110020545A1 LATERAL-FLOW DEPOSITION APPARATUS AND METHOD OF DEPOSITING FILM BY USING THE APPARATUS 有权
标题翻译：侧流沉积装置和使用装置沉积膜的方法
公开(公告)号：US20110020545A1
公开(公告)日：2011-01-27
申请号：US12841139
申请日：2010-07-21
申请人： Ki Jong Kim , Yong Min Yoo , Jung Soo Kim , Hyung Sang Park , Seung Woo Choi , Jeong Ho Lee , Dong Rak Jung
发明人： Ki Jong Kim , Yong Min Yoo , Jung Soo Kim , Hyung Sang Park , Seung Woo Choi , Jeong Ho Lee , Dong Rak Jung
IPC分类号： C23C16/44 , C23C16/54
CPC分类号： C23C16/45544 , C23C16/45504 , C23C16/4584 , C23C16/466
摘要： A deposition apparatus according to an exemplary embodiment of the present invention is a lateral-flow deposition apparatus in which in which a process gas flows between a surface where a substrate is disposed and the opposite surface, substantially in parallel with the substrate. The lateral-flow deposition apparatus includes: a substrate support that moves up/down and rotates the substrate while supporting the substrate; a reactor cover that defines a reaction chamber by contacting the substrate support; and a substrate support lifter and a substrate support rotator that move the substrate support.
摘要翻译：根据本发明的示例性实施方式的沉积装置是横向流沉积装置，其中处理气体在基板设置的表面与基本上平行于基底的相对表面之间流动。横向流沉积装置包括：支撑基板的基板支撑件，其上下移动并旋转基板; 反应器盖，其通过接触所述基板支撑来限定反应室; 以及基板支撑升降器和移动基板支撑件的基板支撑旋转器。

3. 发明申请

US20090156015A1 DEPOSITION APPARATUS 有权
标题翻译：沉积装置
公开(公告)号：US20090156015A1
公开(公告)日：2009-06-18
申请号：US12334135
申请日：2008-12-12
申请人： Hyung Sang Park , Seung Woo Choi , Jong Su Kim , Dong Rak Jung , Jeong Ho Lee , Chun Soo Lee
发明人： Hyung Sang Park , Seung Woo Choi , Jong Su Kim , Dong Rak Jung , Jeong Ho Lee , Chun Soo Lee
IPC分类号： H01L21/30 , C23C16/54
CPC分类号： C23C16/40 , C23C16/4408 , C23C16/45519
摘要： A deposition apparatus configured to form a thin film on a substrate includes: a reactor wall; a substrate support positioned under the reactor wall; and a showerhead plate positioned above the substrate support. The showerhead plate defines a reaction space together with the substrate support. The apparatus also includes one or more gas conduits configured to open to a periphery of the reaction space at least while an inert gas is supplied therethrough. The one or more gas conduits are configured to supply the inert gas inwardly toward the periphery of the substrate support around the reaction space. This configuration prevents reactant gases from flowing between a substrate and the substrate support during a deposition process, thereby preventing deposition of an undesired thin film and impurity particles on the back side of the substrate.
摘要翻译：构造成在基板上形成薄膜的沉积装置包括：反应器壁; 位于反应器壁下方的衬底支撑件; 以及位于基板支撑件上方的喷头板。喷头板与基板支撑件一起限定反应空间。该装置还包括一个或多个气体管道，其构造成至少在通过其供应惰性气体时向反应空间的周边开放。一个或多个气体导管构造成向反应空间周围的衬底支撑件的周围向内供应惰性气体。这种构造防止了在沉积工艺期间反应气体在衬底和衬底支撑件之间流动，从而防止不期望的薄膜和杂质颗粒沉积在衬底的背面上。

4. 发明申请

US20120114856A1 DEPOSITION APPARATUS 有权
标题翻译：沉积装置
公开(公告)号：US20120114856A1
公开(公告)日：2012-05-10
申请号：US13346470
申请日：2012-01-09
申请人： Hyung Sang Park , Seung Woo Choi , Jong Su Kim , Dong Rak Jung , Jeong Ho Lee , Chun Soo Lee
发明人： Hyung Sang Park , Seung Woo Choi , Jong Su Kim , Dong Rak Jung , Jeong Ho Lee , Chun Soo Lee
IPC分类号： C23C16/04 , C23C16/458
CPC分类号： C23C16/40 , C23C16/4408 , C23C16/45519
摘要： A deposition apparatus configured to form a thin film on a substrate includes: a reactor wall; a substrate support positioned under the reactor wall; and a showerhead plate positioned above the substrate support. The showerhead plate defines a reaction space together with the substrate support. The apparatus also includes one or more gas conduits configured to open to a periphery of the reaction space at least while an inert gas is supplied therethrough. The one or more gas conduits are configured to supply the inert gas inwardly toward the periphery of the substrate support around the reaction space. This configuration prevents reactant gases from flowing between a substrate and the substrate support during a deposition process, thereby preventing deposition of an undesired thin film and impurity particles on the back side of the substrate.
摘要翻译：构造成在基板上形成薄膜的沉积装置包括：反应器壁; 位于反应器壁下方的衬底支撑件; 以及位于基板支撑件上方的喷头板。喷头板与基板支撑件一起限定反应空间。该装置还包括一个或多个气体管道，其构造成至少在通过其供应惰性气体时向反应空间的周边开放。一个或多个气体导管构造成向反应空间周围的衬底支撑件的周围向内供应惰性气体。这种构造防止了在沉积工艺期间反应气体在衬底和衬底支撑件之间流动，从而防止不期望的薄膜和杂质颗粒沉积在衬底的背面上。

5. 发明授权

US08747948B2 Deposition apparatus 有权
标题翻译：沉积装置
公开(公告)号：US08747948B2
公开(公告)日：2014-06-10
申请号：US13346470
申请日：2012-01-09
申请人： Hyung Sang Park , Seung Woo Choi , Jong Su Kim , Dong Rak Jung , Jeong Ho Lee , Chun Soo Lee
发明人： Hyung Sang Park , Seung Woo Choi , Jong Su Kim , Dong Rak Jung , Jeong Ho Lee , Chun Soo Lee
IPC分类号： C23C16/00
CPC分类号： C23C16/40 , C23C16/4408 , C23C16/45519
摘要： A deposition apparatus configured to form a thin film on a substrate includes: a reactor wall; a substrate support positioned under the reactor wall; and a showerhead plate positioned above the substrate support. The showerhead plate defines a reaction space together with the substrate support. The apparatus also includes one or more gas conduits configured to open to a periphery of the reaction space at least while an inert gas is supplied therethrough. The one or more gas conduits are configured to supply the inert gas inwardly toward the periphery of the substrate support around the reaction space. This configuration prevents reactant gases from flowing between a substrate and the substrate support during a deposition process, thereby preventing deposition of an undesired thin film and impurity particles on the back side of the substrate.
摘要翻译：构造成在基板上形成薄膜的沉积装置包括：反应器壁; 位于反应器壁下方的衬底支撑件; 以及位于基板支撑件上方的喷头板。喷头板与基板支撑件一起限定反应空间。该装置还包括一个或多个气体导管，其构造成至少在通过其供应惰性气体时向反应空间的周边开放。一个或多个气体导管构造成向反应空间周围的衬底支撑件的周围向内供应惰性气体。这种构造防止了在沉积工艺期间反应气体在衬底和衬底支撑件之间流动，从而防止不期望的薄膜和杂质颗粒沉积在衬底的背面上。

6. 发明授权

US08092606B2 Deposition apparatus 有权
标题翻译：沉积装置
公开(公告)号：US08092606B2
公开(公告)日：2012-01-10
申请号：US12334135
申请日：2008-12-12
申请人： Hyung Sang Park , Seung Woo Choi , Jong Su Kim , Dong Rak Jung , Jeong Ho Lee , Chun Soo Lee
发明人： Hyung Sang Park , Seung Woo Choi , Jong Su Kim , Dong Rak Jung , Jeong Ho Lee , Chun Soo Lee
IPC分类号： C23C16/00 , H01L21/31
CPC分类号： C23C16/40 , C23C16/4408 , C23C16/45519
摘要： A deposition apparatus configured to form a thin film on a substrate includes: a reactor wall; a substrate support positioned under the reactor wall; and a showerhead plate positioned above the substrate support. The showerhead plate defines a reaction space together with the substrate support. The apparatus also includes one or more gas conduits configured to open to a periphery of the reaction space at least while an inert gas is supplied therethrough. The one or more gas conduits are configured to supply the inert gas inwardly toward the periphery of the substrate support around the reaction space. This configuration prevents reactant gases from flowing between a substrate and the substrate support during a deposition process, thereby preventing deposition of an undesired thin film and impurity particles on the back side of the substrate.
摘要翻译：构造成在基板上形成薄膜的沉积装置包括：反应器壁; 位于反应器壁下方的衬底支撑件; 以及位于基板支撑件上方的喷头板。喷头板与基板支撑件一起限定反应空间。该装置还包括一个或多个气体导管，其构造成至少在通过其供应惰性气体时向反应空间的周边开放。一个或多个气体导管构造成向反应空间周围的衬底支撑件的周围向内供应惰性气体。这种构造防止了在沉积工艺期间反应气体在衬底和衬底支撑件之间流动，从而防止不期望的薄膜和杂质颗粒沉积在衬底的背面上。

7. 发明申请

US20090163024A1 METHODS OF DEPOSITING A RUTHENIUM FILM 审中-公开
标题翻译：沉积薄膜的方法
公开(公告)号：US20090163024A1
公开(公告)日：2009-06-25
申请号：US12337141
申请日：2008-12-17
申请人： Jeon Ho Kim , Hyung Sang Park , Seung Woo Choi , Dong Rak Jung , Chun Soo Lee
发明人： Jeon Ho Kim , Hyung Sang Park , Seung Woo Choi , Dong Rak Jung , Chun Soo Lee
IPC分类号： H01L21/443
CPC分类号： H01L21/28556 , C23C16/16 , C23C16/18 , H01L21/76843 , H01L21/76846
摘要： A method of depositing includes: loading a substrate into a reactor; and conducting a plurality of atomic layer deposition cycles on the substrate in the reactor. At least one of the cycles includes steps of: supplying a ruthenium precursor to the reactor; supplying a purge gas to the reactor; and supplying non-plasma ammonia gas to the reactor after supplying the ruthenium precursor. The method allows formation of a ruthenium layer having an excellent step-coverage at a relatively low deposition temperature at a relatively high deposition rate. In situ isothermal deposition of barrier materials, such as TaN at 200-300° C., is also facilitated.
摘要翻译：一种沉积方法包括：将基底装载到反应器中; 并在反应器中的衬底上进行多个原子层沉积循环。所述循环中的至少一个包括以下步骤：向所述反应器供应钌前体; 向反应器供应净化气体; 并在供应钌前体之后向反应器供应非等离子体氨气。该方法允许以相对高的沉积速率在相对低的沉积温度下形成具有优异的阶梯覆盖率的钌层。隔离材料的原位等温沉积，例如在200-300℃的TaN也是有利的。

8. 外观设计

USD614593S1 Substrate support for a semiconductor deposition apparatus 有权
标题翻译：用于半导体沉积设备的衬底支撑
公开(公告)号：USD614593S1
公开(公告)日：2010-04-27
申请号：US29331023
申请日：2009-01-16
申请人： Jeong Ho Lee , Sang Jin Jeong , Dong Rak Jung
设计人： Jeong Ho Lee , Sang Jin Jeong , Dong Rak Jung

9. 发明授权

US08273178B2 Thin film deposition apparatus and method of maintaining the same 有权
标题翻译：薄膜沉积装置及其保持方法
公开(公告)号：US08273178B2
公开(公告)日：2012-09-25
申请号：US12393377
申请日：2009-02-26
申请人： Se Yong Kim , Woo Chan Kim , Dong Rak Jung
发明人： Se Yong Kim , Woo Chan Kim , Dong Rak Jung
IPC分类号： C23C16/44 , C23F1/00 , H01L21/306 , C23C16/06 , C23C16/22
CPC分类号： C23C14/22 , C23C16/44
摘要： A thin film deposition apparatus and a method of maintaining the same are disclosed. In one embodiment, a thin film deposition apparatus includes: a chamber including a removable chamber cover; one or more reactors housed in the chamber; a chamber cover lifting device connected to the chamber cover. The chamber cover lifting device is configured to move the chamber cover vertically between a lower position and an upper position. The apparatus further includes a level sensing device configured to detect whether the chamber cover is level, and a level maintaining device configured to adjust the chamber cover if the chamber cover is not level. This configuration maintains the chamber cover to be level as a condition for further vertical movement of the chamber cover.
摘要翻译：公开了一种薄膜沉积装置及其保持方法。在一个实施例中，薄膜沉积设备包括：包括可移除室盖的室; 容纳在室中的一个或多个反应器; 连接到室盖的室盖提升装置。室盖提升装置构造成在下位置和上位置之间垂直移动室盖。所述装置还包括液位感测装置，其被配置为检测所述腔室盖是否水平;以及水平维持装置，其被配置为如果所述腔室盖不是水平面则调节所述腔室盖。这种构造保持室盖被平坦化，作为室盖的进一步垂直移动的条件。

10. 发明申请

US20090217871A1 THIN FILM DEPOSITION APPARATUS AND METHOD OF MAINTAINING THE SAME 有权
标题翻译：薄膜沉积装置及其保持方法
公开(公告)号：US20090217871A1
公开(公告)日：2009-09-03
申请号：US12393377
申请日：2009-02-26
申请人： Se Yong Kim , Woo Chan Kim , Dong Rak Jung
发明人： Se Yong Kim , Woo Chan Kim , Dong Rak Jung
IPC分类号： B05C11/00 , C23C16/54 , G01B11/26
CPC分类号： C23C14/22 , C23C16/44
摘要： A thin film deposition apparatus and a method of maintaining the same are disclosed. In one embodiment, a thin film deposition apparatus includes: a chamber including a removable chamber cover; one or more reactors housed in the chamber; a chamber cover lifting device connected to the chamber cover. The chamber cover lifting device is configured to move the chamber cover vertically between a lower position and an upper position. The apparatus further includes a level sensing device configured to detect whether the chamber cover is level, and a level maintaining device configured to adjust the chamber cover if the chamber cover is not level. This configuration maintains the chamber cover to be level as a condition for further vertical movement of the chamber cover.
摘要翻译：公开了一种薄膜沉积装置及其保持方法。在一个实施例中，薄膜沉积设备包括：包括可拆卸室盖的室; 容纳在室中的一个或多个反应器; 连接到室盖的室盖提升装置。室盖提升装置构造成在下位置和上位置之间垂直移动室盖。该装置还包括液位感测装置，其被配置为检测腔室盖是否水平;以及水平维持装置，其被配置为如果腔室盖不平坦则调节腔室盖。这种构造保持室盖被平坦化，作为室盖的进一步垂直移动的条件。

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