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    • 3. 发明授权
    • Semiconductor device having improved power density
    • 具有提高的功率密度的半导体器件
    • US07262476B2
    • 2007-08-28
    • US10999704
    • 2004-11-30
    • Jeff D. BudeIsik C. KizilyalliKent Smith
    • Jeff D. BudeIsik C. KizilyalliKent Smith
    • H01L29/76
    • H01L29/7835H01L29/1083H01L29/402
    • An MOS device is formed including a semiconductor layer of a first conductivity type, and source and drain regions of a second conductivity type formed in the semiconductor layer proximate an upper surface of the semiconductor layer. The source and drain regions are spaced apart relative to one another. A drift region of the second conductivity type is formed in the semiconductor layer proximate the upper surface of the semiconductor layer and at least partially between the source and drain regions, the drift region having an impurity doping concentration greater than about 2.0e12 atoms/cm2. An insulating layer is formed on at least a portion of the upper surface of the semiconductor layer. The device further includes a gate formed on the insulating layer at least partially between the source and drain regions, and a buried layer of the first conductivity type formed in the semiconductor layer in close relative proximity to and beneath at least a portion of the drift region. A substantially vertical distance between the buried layer and the drift region, and/or one or more physical dimensions of the buried layer are configured so as to optimize a power density of the device relative to at least one of an on-resistance and a maximum drain current of the device.
    • 形成MOS器件,其包括第一导电类型的半导体层,以及形成在半导体层中的靠近半导体层的上表面的第二导电类型的源区和漏区。 源区和漏区彼此间隔开。 第二导电类型的漂移区形成在靠近半导体层的上表面的半导体层中并且至少部分地在源极和漏极区之间,漂移区具有大于约2.0e12原子/ cm 2的杂质掺杂浓度, SUP> 2 。 绝缘层形成在半导体层的上表面的至少一部分上。 所述器件还包括至少部分地在所述源极和漏极区域之间形成在所述绝缘层上的栅极,以及形成在所述半导体层中的所述第一导电类型的掩埋层彼此靠近并且位于所述漂移区域的至少一部分 。 掩埋层和漂移区之间的基本上垂直的距离和/或掩埋层的一个或多个物理尺寸被配置为优化器件相对于导通电阻和最大值中的至少一个的功率密度 漏极电流。
    • 5. 发明申请
    • Semiconductor device having improved power density
    • 具有提高的功率密度的半导体器件
    • US20060113625A1
    • 2006-06-01
    • US10999704
    • 2004-11-30
    • Jeff BudeIsik KizilyalliKent Smith
    • Jeff BudeIsik KizilyalliKent Smith
    • H01L23/58
    • H01L29/7835H01L29/1083H01L29/402
    • An MOS device is formed including a semiconductor layer of a first conductivity type, and source and drain regions of a second conductivity type formed in the semiconductor layer proximate an upper surface of the semiconductor layer. The source and drain regions are spaced apart relative to one another. A drift region of the second conductivity type is formed in the semiconductor layer proximate the upper surface of the semiconductor layer and at least partially between the source and drain regions, the drift region having an impurity doping concentration greater than about 2.0e12 atoms/cm2. An insulating layer is formed on at least a portion of the upper surface of the semiconductor layer. The device further includes a gate formed on the insulating layer at least partially between the source and drain regions, and a buried layer of the first conductivity type formed in the semiconductor layer in close relative proximity to and beneath at least a portion of the drift region. A substantially vertical distance between the buried layer and the drift region, and/or one or more physical dimensions of the buried layer are configured so as to optimize a power density of the device relative to at least one of an on-resistance and a maximum drain current of the device.
    • 形成MOS器件,其包括第一导电类型的半导体层,以及形成在半导体层中的靠近半导体层的上表面的第二导电类型的源区和漏区。 源区和漏区彼此间隔开。 第二导电类型的漂移区形成在靠近半导体层的上表面的半导体层中并且至少部分地在源极和漏极区之间,漂移区具有大于约2.0e12原子/ cm 2的杂质掺杂浓度, SUP> 2 。 绝缘层形成在半导体层的上表面的至少一部分上。 所述器件还包括至少部分地在所述源极和漏极区域之间形成在所述绝缘层上的栅极,以及形成在所述半导体层中的所述第一导电类型的掩埋层彼此靠近并且位于所述漂移区域的至少一部分 。 掩埋层和漂移区之间的基本上垂直的距离和/或掩埋层的一个或多个物理尺寸被配置为优化器件相对于导通电阻和最大值中的至少一个的功率密度 漏极电流。
    • 7. 发明授权
    • Locking structure for securing a fluid transfer tube
    • 用于固定流体输送管的锁定结构
    • US06309890B1
    • 2001-10-30
    • US09148284
    • 1998-09-04
    • Garry R. TegelerKent Smith
    • Garry R. TegelerKent Smith
    • G01N110
    • B01L3/0275G01N2035/00148Y10S435/808Y10T436/119163Y10T436/2575
    • A test sample card is provided with a locking feature for achieving a positive, locking engagement with a transfer tube that conducts fluid into the interior of the test sample card. The locking feature consists of a tubular channel inwardly disposed from the fluid intake port that has an inner annular rim defining a restriction. The annular rim is of a reduced diameter relative to the diameter of the transfer tube. A recessed region is positioned inwardly from the restriction that has an opening in one of the surfaces of the card body. When the transfer tube is inserted into the tubular channel, the first end is forced past the restriction into the recessed region, with the annular rim compressing the transfer tube. The user is able to sense with their hands when the first end is inserted past the restriction. Visual observation of the first end of the transfer tube through the opening in the card surface confirms that the transfer tube has been properly inserted into the test sample card.
    • 测试样品卡具有锁定特征,用于实现与将流体导入测试样品卡内部的传送管的正向锁定接合。 锁定特征包括从流体入口端向内设置的管状通道,其具有限定限制的内部环形边缘。 环形边缘相对于传送管的直径具有减小的直径。 凹陷区域从在卡体的一个表面中具有开口的限制向内定位。 当输送管插入管状通道中时,第一端被迫通过限制器进入凹入区域,其中环形边缘压缩传送管。 当第一端插入超过限制时,用户能够用双手感觉。 通过卡片表面中的开口目视观察转印管的第一端,确认转印管已正确插入测试样品卡中。