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1. 发明申请

US20130040080A1 APPARATUS FOR EFFICIENT REMOVAL OF HALOGEN RESIDUES FROM ETCHED SUBSTRATES 有权
标题翻译：有效去除蚀刻基板上的卤素残留的装置
公开(公告)号：US20130040080A1
公开(公告)日：2013-02-14
申请号：US13652814
申请日：2012-10-16
申请人： Kenneth J. Bhang , Matthew F. Davis , Travis Morey , James D. Carducci
发明人： Kenneth J. Bhang , Matthew F. Davis , Travis Morey , James D. Carducci
IPC分类号： B32B3/06
CPC分类号： H01L21/02071 , H01L21/67109 , H01L21/67115 , H01L21/67201 , H01L21/68728 , H01L21/68785 , Y10T428/24008 , Y10T428/24628
摘要： An apparatus for removing volatile residues from a substrate is provided. In one embodiment, an apparatus for removing halogen-containing residues from a substrate includes a chamber suitable for operating maintaining a vacuum therein and a heat module positioned to heat a substrate disposed in the chamber. The apparatus for removing halogen-containing residues from a substrate also includes at least one of A) a temperature controlled pedestal having a projection extending radially therefrom suitable for supporting the temperature control pedestal on a ledge of the chamber body, the projection thermally isolating the base from the chamber body; B) a pair of substrate holders that include two support flanges extending radially inward from an inner edge of an arc-shaped body, each support flange having a substrate support step that includes a sloped landing; or C) a domed window.
摘要翻译：提供了用于从基板除去挥发性残留物的装置。在一个实施例中，用于从基板去除含卤素残余物的装置包括适于在其中维持真空的操作的腔室和定位成加热设置在腔室中的衬底的热模块。用于从基板除去含卤素残留物的设备还包括以下中的至少一个：A）温度控制基座，其具有径向延伸的突出物，其适于将温度控制基座支撑在腔体的凸缘上，所述突起热隔离基座从室内; B）一对基板保持器，其包括从弧形体的内边缘径向向内延伸的两个支撑凸缘，每个支撑凸缘具有包括倾斜着陆部的基板支撑台阶; 或C）圆顶窗。

2. 发明申请

US20100133255A1 APPARATUS FOR EFFICIENT REMOVAL OF HALOGEN RESIDUES FROM ETCHED SUBSTRATES 有权
标题翻译：有效去除蚀刻基板上的卤素残留的装置
公开(公告)号：US20100133255A1
公开(公告)日：2010-06-03
申请号：US12572786
申请日：2009-10-02
申请人： Kenneth J. Bahng , Matthew F. Davis , Travis Morey , James D. Carducci
发明人： Kenneth J. Bahng , Matthew F. Davis , Travis Morey , James D. Carducci
IPC分类号： B08B7/00 , B32B1/00 , B32B3/06 , B08B5/04
CPC分类号： H01L21/02071 , H01L21/67109 , H01L21/67115 , H01L21/67201 , H01L21/68728 , H01L21/68785 , Y10T428/24008 , Y10T428/24628
摘要： An apparatus for removing volatile residues from a substrate is provided. In one embodiment, an apparatus for removing halogen-containing residues from a substrate includes a chamber suitable for operating maintaining a vacuum therein and a heat module positioned to heat a substrate disposed in the chamber. The apparatus for removing halogen-containing residues from a substrate also includes at least one of A) a temperature controlled pedestal having a projection extending radially therefrom suitable for supporting the temperature control pedestal on a ledge of the chamber body, the projection thermally isolating the base from the chamber body; B) a pair of substrate holders that include two support flanges extending radially inward from an inner edge of an arc-shaped body, each support flange having a substrate support step that includes a sloped landing; or C) a domed window.
摘要翻译：提供了用于从基板除去挥发性残留物的装置。在一个实施例中，用于从基板去除含卤素残余物的装置包括适于在其中维持真空的操作的腔室和定位成加热设置在腔室中的衬底的热模块。用于从基板除去含卤素残留物的设备还包括以下中的至少一个：A）温度控制基座，其具有径向延伸的突起，适合于将温度控制基座支撑在腔体的凸缘上，从室内; B）一对基板保持器，其包括从弧形体的内边缘径向向内延伸的两个支撑凸缘，每个支撑凸缘具有包括倾斜着陆部的基板支撑台阶; 或C）圆顶窗。

3. 发明授权

US08293016B2 Apparatus for efficient removal of halogen residues from etched substrates 有权
标题翻译：用于从蚀刻的基板有效去除卤素残留物的装置
公开(公告)号：US08293016B2
公开(公告)日：2012-10-23
申请号：US12572786
申请日：2009-10-02
申请人： Kenneth J. Bahng , Matthew F. Davis , Travis Morey , James D. Carducci
发明人： Kenneth J. Bahng , Matthew F. Davis , Travis Morey , James D. Carducci
IPC分类号： C23C16/00
CPC分类号： H01L21/02071 , H01L21/67109 , H01L21/67115 , H01L21/67201 , H01L21/68728 , H01L21/68785 , Y10T428/24008 , Y10T428/24628
摘要： An apparatus for removing volatile residues from a substrate is provided. In one embodiment, an apparatus for removing halogen-containing residues from a substrate includes a chamber suitable for operating maintaining a vacuum therein and a heat module positioned to heat a substrate disposed in the chamber. The apparatus for removing halogen-containing residues from a substrate also includes at least one of A) a temperature controlled pedestal having a projection extending radially therefrom suitable for supporting the temperature control pedestal on a ledge of the chamber body, the projection thermally isolating the base from the chamber body; B) a pair of substrate holders that include two support flanges extending radially inward from an inner edge of an arc-shaped body, each support flange having a substrate support step that includes a sloped landing; or C) a domed window.
摘要翻译：提供了用于从基板除去挥发性残留物的装置。在一个实施例中，用于从基板去除含卤素残余物的装置包括适于在其中维持真空的操作的腔室和定位成加热设置在腔室中的衬底的热模块。用于从基板除去含卤素残留物的设备还包括以下中的至少一个：A）温度控制基座，其具有径向延伸的突起，适合于将温度控制基座支撑在腔体的凸缘上，从室内; B）一对基板保持器，其包括从弧形体的内边缘径向向内延伸的两个支撑凸缘，每个支撑凸缘具有包括倾斜着陆部的基板支撑台阶; 或C）圆顶窗。

4. 发明申请

US20100224322A1 ENDPOINT DETECTION FOR A REACTOR CHAMBER USING A REMOTE PLASMA CHAMBER 审中-公开
标题翻译：使用远程等离子体室的反应器室的端点检测
公开(公告)号：US20100224322A1
公开(公告)日：2010-09-09
申请号：US12699677
申请日：2010-02-03
申请人： ZHIFENG SUI , Matthew F. Davis
发明人： ZHIFENG SUI , Matthew F. Davis
IPC分类号： C23F1/08 , B05C11/00 , H01L21/3065
CPC分类号： G01N21/68 , H01J37/32357 , H01J37/32963 , H01J37/32972
摘要： An analysis chamber coupled to a processing chamber includes an actively switchable capacitive-inductive coupling apparatus providing excitation in a capacitively coupled mode and an inductively coupled mode.
摘要翻译：耦合到处理室的分析室包括提供电容耦合模式和电感耦合模式的激励的可主动切换的电容感应耦合装置。

5. 发明授权

US07602484B2 Method and apparatus for performing limited area spectral analysis 失效
标题翻译：用于进行有限区域光谱分析的方法和装置
公开(公告)号：US07602484B2
公开(公告)日：2009-10-13
申请号：US11952748
申请日：2007-12-07
申请人： Matthew F. Davis , Lei Lian , Yasuhiro Uo , Michael D. Willwerth , Andrei Ivanovich Netchitaliouk
发明人： Matthew F. Davis , Lei Lian , Yasuhiro Uo , Michael D. Willwerth , Andrei Ivanovich Netchitaliouk
IPC分类号： G01N21/00
CPC分类号： H01J37/32935 , G01N21/8851 , G01N21/9501 , H01L21/67248 , H01L21/67253 , H01L22/26
摘要： A method and apparatus for obtaining in-situ data of a substrate in a semiconductor substrate processing chamber is provided. The apparatus includes an optics assembly for acquiring data regarding a substrate and an actuator assembly adapted to laterally move the optics assembly in two dimensions relative to the substrate.
摘要翻译：提供了一种用于在半导体衬底处理室中获得衬底原位数据的方法和装置。该装置包括用于获取关于衬底的数据的光学组件和适于相对于衬底在两个维度上横向移动光学组件的致动器组件。

6. 发明申请

US20080151237A1 Interferometric endpoint determination in a substrate etching process 失效
标题翻译：基板蚀刻工艺中的干涉测量端点测定
公开(公告)号：US20080151237A1
公开(公告)日：2008-06-26
申请号：US11953853
申请日：2007-12-10
申请人： Lei Lian , Matthew F. Davis
发明人： Lei Lian , Matthew F. Davis
IPC分类号： G01J3/00 , G01N21/55 , G01B9/02
CPC分类号： H01J37/32935 , G01B11/0675 , G01B11/0683 , H01J37/32963
摘要： In determining an endpoint of etching a substrate, light that is directed toward the substrate is reflected from the substrate. A wavelength of the light is selected to locally maximize the intensity of the reflected light at an initial time point of the etching process. The reflected light is detected to determine an endpoint of the substrate etching process.
摘要翻译：在确定蚀刻衬底的端点时，指向衬底的光从衬底反射。选择光的波长以在蚀刻处理的初始时间点局部地最大化反射光的强度。检测反射光以确定基板蚀刻工艺的端点。

7. 发明授权

US07306696B2 Interferometric endpoint determination in a substrate etching process 失效
标题翻译：基板蚀刻工艺中的干涉测量端点测定
公开(公告)号：US07306696B2
公开(公告)日：2007-12-11
申请号：US10286402
申请日：2002-11-01
申请人： Lei Lian , Matthew F. Davis
发明人： Lei Lian , Matthew F. Davis
IPC分类号： H01L21/3065 , C23C16/00 , C23C14/00
CPC分类号： H01J37/32935 , G01B11/0675 , G01B11/0683 , H01J37/32963
摘要： In determining an endpoint of etching a substrate, light that is directed toward the substrate is reflected from the substrate. A wavelength of the light is selected to locally maximize the intensity of the reflected light at an initial time point of the etching process. The reflected light is detected to determine an endpoint of the substrate etching process.
摘要翻译：在确定蚀刻衬底的端点时，指向衬底的光从衬底反射。选择光的波长以在蚀刻处理的初始时间点局部地最大化反射光的强度。检测反射光以确定基板蚀刻工艺的端点。

8. 发明授权

US07158221B2 Method and apparatus for performing limited area spectral analysis 失效
标题翻译：用于进行有限区域光谱分析的方法和装置
公开(公告)号：US07158221B2
公开(公告)日：2007-01-02
申请号：US10744711
申请日：2003-12-23
申请人： Matthew F. Davis , Lei Lian , Yasuhiro Uo , Michael D. Willwerth , Andrei Ivanovich Netchitaliouk
发明人： Matthew F. Davis , Lei Lian , Yasuhiro Uo , Michael D. Willwerth , Andrei Ivanovich Netchitaliouk
IPC分类号： G01N21/00
CPC分类号： H01J37/32935 , G01N21/8851 , G01N21/9501 , H01L21/67248 , H01L21/67253 , H01L22/26
摘要： A method and apparatus for obtaining in-situ data of a substrate in a semiconductor substrate processing chamber is provided. The apparatus includes an optics assembly for acquiring data regarding a substrate and an actuator assembly adapted to laterally move the optics assembly in two dimensions relative to the substrate.
摘要翻译：提供了一种用于在半导体衬底处理室中获得衬底原位数据的方法和装置。该装置包括用于获取关于衬底的数据的光学组件和适于相对于衬底在两个维度上横向移动光学组件的致动器组件。

9. 发明授权

US08232212B2 Within-sequence metrology based process tuning for adaptive self-aligned double patterning 失效
标题翻译：用于自适应自对准双重图案的基于序列测量的过程调整
公开(公告)号：US08232212B2
公开(公告)日：2012-07-31
申请号：US12172106
申请日：2008-07-11
申请人： Matthew F. Davis , Thorsten B. Lill , Lei Lian
发明人： Matthew F. Davis , Thorsten B. Lill , Lei Lian
IPC分类号： H01L21/302
CPC分类号： H01L21/67207 , B82Y10/00 , H01L21/0337 , H01L21/0338 , H01L21/67069 , H01L21/67253 , H01L22/12 , H01L22/20 , H01L2924/0002 , H01L2924/00
摘要： An apparatus for adaptive self-aligned dual patterning and method thereof. The method includes providing a substrate to a processing platform configured to perform an etch process and a deposition process and a metrology unit configured for in-vacuo critical dimension (CD) measurement. The in-vacuo CD measurement is utilized for feedforward adaptive control of the process sequence processing platform or for feedback and feedforward adaptive control of chamber process parameters. In one aspect, a first layer of a multi-layered masking stack is etched to form a template mask, an in-vacuo CD measurement of the template mask is made, and a spacer is formed, adjacent to the template mask, to a width that is dependent on the CD measurement of the template mask.
摘要翻译：一种用于自适应自对准双重图案化的装置及其方法。该方法包括向被配置为执行蚀刻工艺和沉积工艺的处理平台提供衬底以及配置用于真空临界尺寸（CD）测量）的测量单元。真空CD测量用于过程序列处理平台的前馈自适应控制或者用于反馈和前馈自适应控制室工艺参数。在一个方面，蚀刻多层掩模叠层的第一层以形成模板掩模，制成模板掩模的真空中的CD测量，并且将与模板掩模相邻的间隔物形成为宽度这取决于模板掩码的CD测量。

10. 发明申请

US20100071438A1 METHOD AND APPARATUS FOR CALIBRATING MASS FLOW CONTROLLERS 失效
标题翻译：用于校准大流量控制器的方法和装置
公开(公告)号：US20100071438A1
公开(公告)日：2010-03-25
申请号：US12233805
申请日：2008-09-19
申请人： Matthew F. Davis , Thorsten B. Lill , Quentin E. Walker
发明人： Matthew F. Davis , Thorsten B. Lill , Quentin E. Walker
IPC分类号： G01F25/00 , C23F1/08
CPC分类号： G01F1/667 , G01F25/0007
摘要： A method for determining the flow rate of a gas includes measuring a first concentration of a calibration gas provided to the process chamber at a first pressure and temperature by directing infrared radiation into the process chamber and monitoring a first amount of infrared radiation absorbed by the calibration gas. A mixture of a second gas and the calibration gas is provided to the process chamber while maintaining the first pressure and temperature. A second concentration of the calibration gas in the mixture is measured by directing infrared radiation into the process chamber and monitoring a second amount of infrared radiation absorbed by the calibration gas. A flow rate of the second gas is calculated by comparing the first and second concentrations of the calibration gas. In one embodiment, the calibration gas and the second gas may not absorb the infrared radiation at the same wavelength.
摘要翻译：用于确定气体流速的方法包括通过将红外辐射引入处理室来测量在第一压力和温度下提供给处理室的校准气体的第一浓度，并监测由校准吸收的第一量的红外辐射加油站。在保持第一压力和温度的同时，向处理室提供第二气体和校准气体的混合物。混合物中校准气体的第二浓度通过将红外辐射引入处理室并监测由校准气体吸收的第二量的红外辐射来测量。通过比较校准气体的第一和第二浓度来计算第二气体的流量。在一个实施例中，校准气体和第二气体可能不吸收相同波长的红外辐射。

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