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1. 发明申请

US20050067745A1 Method and apparatus for deposition & formation of metal silicides 审中-公开
标题翻译：用于沉积和形成金属硅化物的方法和装置
公开(公告)号：US20050067745A1
公开(公告)日：2005-03-31
申请号：US10674302
申请日：2003-09-30
申请人： Kenneth Giewont , Bradley Jones , Christian Lavoie , Robert Purtell , Yun-Yu Wang , Kwong Wong
发明人： Kenneth Giewont , Bradley Jones , Christian Lavoie , Robert Purtell , Yun-Yu Wang , Kwong Wong
IPC分类号： C22F1/00 , C23C14/16 , C23C14/58
CPC分类号： C23C14/5806 , C23C14/16
摘要： Disclosed is a method and structure for forming a silicide on a silicon material. The invention places the silicon material in a vacuum environment, forms metal on the silicon material, and then heats the silicon surface and the metal without breaking the vacuum environment. The processes of forming the metal and heating the silicon can be performed simultaneously without breaking the vacuum environment to form the silicide as the metal is being deposited. After the foregoing processing, the invention can remove the silicon surface from the vacuum environment and perform additional heating of the silicon surface. The first heating process forms a monosilicide and the additional heating forms a disilicide.
摘要翻译：公开了一种在硅材料上形成硅化物的方法和结构。本发明将硅材料置于真空环境中，在硅材料上形成金属，然后在不破坏真空环境的情况下加热硅表面和金属。当金属沉积时，形成金属和加热硅的工艺可以同时进行而不破坏真空环境以形成硅化物。在上述处理之后，本发明可以从真空环境中去除硅表面，并对硅表面进行附加加热。第一加热工艺形成一硅化物，另外的加热形成二硅化物。

2. 发明申请

US20070087541A1 METHOD AND APPARATUS FOR DEPOSITION & FORMATION OF METAL SILICIDES 审中-公开
标题翻译：用于沉积和形成金属硅的方法和装置
公开(公告)号：US20070087541A1
公开(公告)日：2007-04-19
申请号：US11557259
申请日：2006-11-07
申请人： Kenneth Giewont , Bradley Jones , Christian Lavoie , Robert Purtell , Yun-Yu Wang , Kwong Wong
发明人： Kenneth Giewont , Bradley Jones , Christian Lavoie , Robert Purtell , Yun-Yu Wang , Kwong Wong
IPC分类号： H01L21/4763 , H01L21/3205
CPC分类号： C23C14/5806 , C23C14/16
摘要： Disclosed is a method and structure for forming a silicide on a silicon material. The invention places the silicon material in a vacuum environment, forms metal on the silicon material, and then heats the silicon surface and the metal without breaking the vacuum environment. The processes of forming the metal and heating the silicon can be performed simultaneously without breaking the vacuum environment to form the silicide as the metal is being deposited. After the foregoing processing, the invention can remove the silicon surface from the vacuum environment and perform additional heating of the silicon surface. The first heating process forms a monosilicide and the additional heating forms a disilicide.
摘要翻译：公开了一种在硅材料上形成硅化物的方法和结构。本发明将硅材料置于真空环境中，在硅材料上形成金属，然后在不破坏真空环境的情况下加热硅表面和金属。当金属沉积时，形成金属和加热硅的工艺可以同时进行而不破坏真空环境以形成硅化物。在上述处理之后，本发明可以从真空环境中去除硅表面，并对硅表面进行附加加热。第一加热工艺形成一硅化物，另外的加热形成二硅化物。

3. 发明申请

US20060057844A1 STRUCTURE AND METHOD FOR ENHANCED UNI-DIRECTIONAL DIFFUSION OF COBALT SILICIDE 失效
标题翻译：碳酸硅酮增强单向扩散的结构与方法
公开(公告)号：US20060057844A1
公开(公告)日：2006-03-16
申请号：US10711365
申请日：2004-09-14
申请人： Anthony Domenicucci , Bradley Jones , Christian Lavoie , Robert Purtell , Yun Yu Wang , Kwong Hon Wong
发明人： Anthony Domenicucci , Bradley Jones , Christian Lavoie , Robert Purtell , Yun Yu Wang , Kwong Hon Wong
IPC分类号： H01L21/44
CPC分类号： H01L21/28518 , H01L29/665
摘要： The present invention provides a method for enhancing uni-directional diffusion of a metal during silicidation by using a metal-containing silicon alloy in conjunction with a first anneal in which two distinct thermal cycles are performed. The first thermal cycle of the first anneal is performed at a temperature that is capable of enhancing the uni-directional diffusion of metal, e.g., Co and/or Ni, into a Si-containing layer. The first thermal cycle causes an amorphous metal-containing silicide to form. The second thermal cycle is performed at a temperature that converts the amorphous metal-containing silicide into a crystallized metal rich silicide that is substantially non-etchable as compared to the metal-containing silicon alloy layer or a pure metal-containing layer. Following the first anneal, a selective etch is performed to remove any unreacted metal-containing alloy layer from the structure. A second anneal is performed to convert the metal rich silicide phase formed by the two thermal cycles of the first anneal into a metal silicide phase that is in its lowest resistance phase. A metal silicide is provided whose thickness is self-limiting.
摘要翻译：本发明提供了一种通过使用含金属的硅合金与进行两个不同的热循环的第一次退火相结合的方法来增强金属在硅化过程中的单向扩散。第一退火的第一热循环在能够增强金属例如Co和/或Ni的单向扩散到含Si层中的温度下进行。第一热循环导致形成含非晶态金属的硅化物。第二热循环在将含非晶态金属的硅化物转化为与含金属的硅合金层或纯金属含有层相比基本上不可蚀刻的结晶的富含金属的硅化物的温度下进行。在第一退火之后，执行选择性蚀刻以从结构中除去任何未反应的含金属合金层。执行第二退火以将由第一退火的两个热循环形成的富金属硅化物相转换成处于其最低电阻相的金属硅化物相。提供了一种金属硅化物，其厚度是自限制的。

4. 发明申请

US20050255699A1 METHOD FOR CONTROLLING VOIDING AND BRIDGING IN SILICIDE FORMATION 有权
标题翻译：用于控制硅化物形成中的阻塞和桥接的方法
公开(公告)号：US20050255699A1
公开(公告)日：2005-11-17
申请号：US10709534
申请日：2004-05-12
申请人： Bradley Jones , Christian Lavoie , Robert Purtell , Yun-Yu Wang , Keith Wong
发明人： Bradley Jones , Christian Lavoie , Robert Purtell , Yun-Yu Wang , Keith Wong
IPC分类号： H01L21/20 , H01L21/285 , H01L21/336 , H01L21/44 , H01L21/4763 , H01L29/78
CPC分类号： H01L29/665 , H01L21/28518 , H01L29/7833
摘要： A method for forming a metal suicide contact for a semiconductor device includes forming a refractory metal layer over a substrate, including active and non-active area of said substrate, and forming a cap layer over the refractory metal layer. A counter tensile layer is formed over the cap layer, wherein the counter tensile layer is selected from a material such that an opposing directional stress is created between the counter tensile layer and the cap layer, with respect to a directional stress created between the refractory metal layer and the cap layer.
摘要翻译：用于形成用于半导体器件的金属硅化物接触的方法包括在包括所述衬底的有源和非有源区域的衬底上形成难熔金属层，并在难熔金属层上形成覆盖层。反面拉伸层形成在覆盖层上方，其中相对抗拉层选自材料，使得在相对拉伸层和盖层之间产生相对的方向应力，相对于难熔金属之间产生的方向应力层和盖层。

5. 发明申请

US20070128867A1 METHOD FOR ENHANCED UNI-DIRECTIONAL DIFFUSION OF METAL AND SUBSEQUENT SILICIDE FORMATION 审中-公开
标题翻译：金属和后续硅化物形成的增强的单向扩散方法
公开(公告)号：US20070128867A1
公开(公告)日：2007-06-07
申请号：US11672363
申请日：2007-02-07
申请人： Anthony Domenicucci , Bradley Jones , Christian Lavoie , Robert Purtell , Yun Wang , Kwong Wong
发明人： Anthony Domenicucci , Bradley Jones , Christian Lavoie , Robert Purtell , Yun Wang , Kwong Wong
IPC分类号： H01L21/44 , H01L23/48
CPC分类号： H01L21/28518 , H01L29/665
摘要： The present invention provides a method for enhancing uni-directional diffusion of a metal during silicidation by using a metal-containing silicon alloy in conjunction with a first anneal in which two distinct thermal cycles are performed. The first thermal cycle of the first anneal is performed at a temperature that is capable of enhancing the uni-directional diffusion of metal, e.g., Co and/or Ni, into a Si-containing layer. The first thermal cycle causes an amorphous metal-containing silicide to form. The second thermal cycle is performed at a temperature that converts the amorphous metal-containing silicide into a crystallized metal rich silicide that is substantially non-etchable as compared to the metal-containing silicon alloy layer or a pure metal-containing layer. Following the first anneal, a selective etch is performed to remove any unreacted metal-containing alloy layer from the structure. A second anneal is performed to convert the metal rich silicide phase formed by the two thermal cycles of the first anneal into a metal silicide phase that is in its lowest resistance phase. A metal silicide is provided whose thickness is self-limiting.
摘要翻译：本发明提供了一种通过使用含金属的硅合金与进行两个不同的热循环的第一次退火相结合的方法来增强金属在硅化过程中的单向扩散。第一退火的第一热循环在能够增强金属例如Co和/或Ni的单向扩散到含Si层中的温度下进行。第一热循环导致形成含非晶态金属的硅化物。第二热循环在将含非晶态金属的硅化物转化为与含金属的硅合金层或纯金属含有层相比基本上不可蚀刻的结晶的富含金属的硅化物的温度下进行。在第一退火之后，执行选择性蚀刻以从结构中除去任何未反应的含金属合金层。执行第二退火以将由第一退火的两个热循环形成的富金属硅化物相转换成处于其最低电阻相的金属硅化物相。提供了一种金属硅化物，其厚度是自限制的。

6. 发明申请

US20120245014A1 APPARATUSES AND METHODS OF MANUFACTURING OILFIELD MACHINES 审中-公开
标题翻译：制造油田机械的设备和方法
公开(公告)号：US20120245014A1
公开(公告)日：2012-09-27
申请号：US13500291
申请日：2010-10-06
申请人： Bradley Jones , Thomas Geehan
发明人： Bradley Jones , Thomas Geehan
IPC分类号： B04B11/00 , B23P6/00 , B01D43/00
摘要： A centrifuge, including a bowl having a composite material, a screw conveyor rotatably mounted within the bowl, and a feed pipe mounted within the screw conveyor for feeding a drilling mud through a feed port in a wall of the screw conveyor to an annular space between the bowl and the wall of the screw conveyor. Also, a method of replacing a centrifuge component, including removing the centrifuge component and installing a new centrifuge component, where the centrifuge components include a bowl and a screw conveyor rotatably mounted within the bowl, and where the new centrifuge component includes a composite material.
摘要翻译：一种离心机，包括具有复合材料的碗，可旋转地安装在碗内的螺旋输送机和安装在螺旋输送机内的进料管，用于将钻井泥浆通过螺旋输送机的壁中的进料口供给到螺旋输送机的壁之间的环形空间，碗和螺旋输送机的墙壁。而且，一种替换离心机组件的方法，包括移除离心机组件并安装新的离心机组件，其中离心机组件包括可转动地安装在碗内的碗和螺旋输送机，以及新离心机组件包括复合材料。

7. 发明申请

US20110170252A1 Mobile Computer Stand With Integrated Keyboard 失效
标题翻译：带集成键盘的移动电脑支架
公开(公告)号：US20110170252A1
公开(公告)日：2011-07-14
申请号：US13069146
申请日：2011-03-22
申请人： Bradley Jones , Paul Tomita
发明人： Bradley Jones , Paul Tomita
IPC分类号： G06F1/16
CPC分类号： G06F1/1632
摘要： A device for use with a portable computer includes a base, a stand having an upper portion and an adjustable linkage, and a connection mechanism. The base is adapted to rest upon a surface and includes a keyboard that is physically integrated with the base. The stand is attached to the base. The upper portion is adapted to provide a surface upon which a portable computer rests. The upper portion includes an attachment mechanism adapted to attach to a portable computer resting upon the upper portion to secure the portable computer physically to the upper portion. The adjustable linkage is connected to the base and is connected to the upper portion of the stand on another end. The adjustable linkage is adapted to position the upper portion of the stand. The connection mechanism provides data communication from the integrated keyboard to a portable computer resting upon the upper portion.
摘要翻译：用于便携式计算机的装置包括基座，具有上部和可调节联动装置的支架以及连接机构。基座适于搁置在表面上，并包括与基座物理一体化的键盘。支架附在底座上。上部适于提供便携式计算机所在的表面。上部包括适于附接到搁置在上部上的便携式计算机以将便携式计算机物理地固定到上部的附接机构。可调节联动装置连接到基座，并在另一端连接到支架的上部。可调节联动装置适于定位支架的上部。连接机构提供从集成键盘到位于上部的便携式计算机的数据通信。

8. 发明申请

US20060013528A1 Scanning method and apparatus 有权
标题翻译：扫描方法和装置
公开(公告)号：US20060013528A1
公开(公告)日：2006-01-19
申请号：US10533440
申请日：2003-10-29
申请人： Gavan Rosman , Christopher Byrne , Bradley Jones
发明人： Gavan Rosman , Christopher Byrne , Bradley Jones
IPC分类号： G02B6/26
CPC分类号： G01Q10/06 , G02B6/3504 , G02B6/3572 , G02B21/002 , G02B23/2407 , G02B26/101
摘要： A scanning apparatus and method, the apparatus comprising: a light transmission means (90) having an exit tip; first and second drive means (92,94) for resonantly driving the light transmission means (90) in orthogonal directions; wherein the first and second drive means (92,94) are operable to move the tip in an elliptical pattern while varying the eccentricity of the elliptical pattern, whereby a portion of the elliptical pattern having a centre on the minor axis of the elliptical pattern approximates—at least in appearance—a raster pattern.
摘要翻译：一种扫描装置和方法，该装置包括：具有出射端的光传输装置（90）第一和第二驱动装置（92,94），用于在正交方向上共振地驱动光传输装置（90）; 其中所述第一和第二驱动装置（92,94）可操作以使所述尖端以椭圆形图案移动，同时改变所述椭圆形图案的偏心度，由此椭圆图案的具有椭圆图案的短轴上的中心的部分近似于 - 至少在外观上 - 光栅图案。

9. 发明授权

US08813970B2 Filter screen with tension element 有权
标题翻译：带张力元件的过滤网
公开(公告)号：US08813970B2
公开(公告)日：2014-08-26
申请号：US13051401
申请日：2011-03-18
申请人： Bradley Jones
发明人： Bradley Jones
IPC分类号： B07B1/49
CPC分类号： B07B1/4618 , B07B1/4681 , B07B1/469 , B07B2201/04
摘要： A filter screen including a frame having an upstream surface, a downstream surface opposite the upstream surface, a perimeter grating element, and a plurality of inner grating elements extending within the perimeter grating element and forming at least one opening extending from the upstream surface to the downstream surface; a filter element disposed on the upstream surface; and a tension element disposed on the downstream surface. A method of manufacturing a filter screen, the method including forming a frame having an upstream surface, a downstream surface opposite the upstream surface, a perimeter grating element, and a plurality of inner grating elements extending within the perimeter grating element and forming at least one opening extending from the upstream surface to the downstream surface; attaching a filter element to the upstream surface; and attaching a tension element to the downstream surface.
摘要翻译：一种过滤屏幕，包括具有上游表面的框架，与上游表面相对的下游表面，周边光栅元件和在周边光栅元件内延伸的多个内部光栅元件，并形成至少一个从上游表面延伸到下游表面设置在所述上游面上的过滤元件; 以及设置在下游表面上的张力元件。一种制造滤网的方法，所述方法包括形成具有上游表面的框架，与上游表面相对的下游表面，周边光栅元件和在周边光栅元件内延伸的多个内光栅元件，并形成至少一个开口从上游表面延伸到下游表面; 将过滤元件附接到所述上游表面; 以及将张力元件附接到所述下游表面。

10. 发明授权

US08724312B2 Mobile computer stand with integrated keyboard 失效
标题翻译：带集成键盘的移动电脑支架
公开(公告)号：US08724312B2
公开(公告)日：2014-05-13
申请号：US13069146
申请日：2011-03-22
申请人： Bradley Jones , Paul Tomita
发明人： Bradley Jones , Paul Tomita
IPC分类号： H05K5/00 , H05K7/00 , G06F1/16 , A47B91/00 , A47G29/00 , B65D19/00
CPC分类号： G06F1/1632
摘要： A device for use with a portable computer includes a base, a stand having an upper portion and an adjustable linkage, and a connection mechanism. The base is adapted to rest upon a surface and includes a keyboard that is physically integrated with the base. The stand is attached to the base. The upper portion is adapted to provide a surface upon which a portable computer rests. The upper portion includes an attachment mechanism adapted to attach to a portable computer resting upon the upper portion to secure the portable computer physically to the upper portion. The adjustable linkage is connected to the base and is connected to the upper portion of the stand on another end. The adjustable linkage is adapted to position the upper portion of the stand. The connection mechanism provides data communication from the integrated keyboard to a portable computer resting upon the upper portion.
摘要翻译：用于便携式计算机的装置包括基座，具有上部和可调节联动装置的支架以及连接机构。基座适于搁置在表面上，并包括与基座物理一体化的键盘。支架附在底座上。上部适于提供便携式计算机所在的表面。上部包括适于附接到搁置在上部上的便携式计算机以将便携式计算机物理地固定到上部的附接机构。可调节联动装置连接到基座，并在另一端连接到支架的上部。可调节联动装置适于定位支架的上部。连接机构提供从集成键盘到位于上部的便携式计算机的数据通信。

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