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1. 发明授权

US06624726B2 High Q factor MEMS resonators 有权
公开(公告)号：US06624726B2
公开(公告)日：2003-09-23
申请号：US09944568
申请日：2001-08-31
申请人： Feng Niu , Kenneth D. Cornett
发明人： Feng Niu , Kenneth D. Cornett
IPC分类号： H03H9205
CPC分类号： H03H9/2405 , H03H9/02433 , H03H2009/02496
摘要： Microelectromechanical resonators that can be fabricated on a semiconductor die by processes normally used in fabricating microelectronics (e.g., CMOS) circuits are provided. The resonators comprises at least two vibratable members that are closely spaced relative to a wavelength associated with their vibrating frequency, and driven to vibrate one-half a vibration period out of phase with each other, i.e. to mirror each others motion. Driving the vibratable members as stated leads to destructive interference effects that suppress leakage of acoustic energy from the vibratable members into the die, and improve the Q-factor of the resonator. Vibratable members in the form of vibratable plates that are formed by deep anisotropic etching one or more trenches in the die are disclosed. Embodiments in which two sets of vibratable plates are spaced by ½ the aforementioned wavelength to further suppress acoustic energy leakage, and improve the Q-factor of the resonator are disclosed.

2. 发明授权

US06734762B2 MEMS resonators and method for manufacturing MEMS resonators 失效
标题翻译： MEMS谐振器和制造MEMS谐振器的方法
公开(公告)号：US06734762B2
公开(公告)日：2004-05-11
申请号：US09828431
申请日：2001-04-09
申请人： Kenneth D. Cornett , Feng Niu
发明人： Kenneth D. Cornett , Feng Niu
IPC分类号： H03H946
CPC分类号： H03H3/0072 , H03H3/007 , H03H9/0023
摘要： A first type of MEMS resonator adapted to be fabricated on a SOI wafer is provided. A second type of MEMS resonator that is fabricated using deep trench etching and occupies a small area of a semiconductor chip is taught. Overtone versions of the resonators that provide for differential input and output signal coupling are described. In particular resonators suited for differential coupling that are physically symmetric as judged from center points, and support anti-symmetric vibration modes are provided. Such resonators are robust against signal noise caused by jarring. The MEMS resonators taught by the present invention are suitable for replacing crystal oscillators, and allowing oscillators to be integrated on a semiconductor chip. An oscillator using the MEMS resonator is also provided.
摘要翻译：提供了适于制造在SOI晶片上的第一类MEMS谐振器。教导了使用深沟槽蚀刻制造并占据半导体芯片的小面积的第二类型的MEMS谐振器。描述了提供差分输入和输出信号耦合的谐振器的Overtone版本。特别地，适用于从中心点判断为物理对称的差动耦合的谐振器，并且支持反对称振动模式。这种谐振器对于由振动引起的信号噪声是鲁棒的。由本发明教导的MEMS谐振器适用于替代晶体振荡器，并且允许将振荡器集成在半导体芯片上。还提供了使用MEMS谐振器的振荡器。

3. 发明授权

US5959515A High Q integrated resonator structure 失效
标题翻译：高Q集成谐振器结构
公开(公告)号：US5959515A
公开(公告)日：1999-09-28
申请号：US909206
申请日：1997-08-11
申请人： Kenneth D. Cornett , Branko Avanic , David L. Stolfa
发明人： Kenneth D. Cornett , Branko Avanic , David L. Stolfa
IPC分类号： H01L21/02 , H03J3/20
CPC分类号： H01L28/10 , H01L28/40 , H03J3/20
摘要： A high Q integrated inductor-capacitor (L-C) resonator (200) includes a planar inductor (201) having a plurality of turns and a serially connected first and second capacitor (205, 207) that is connected in parallel with the planar inductor (201). The first and second capacitors (205, 207) are positioned within at least one turn of the planar inductor (201) for reducing the parasitic interconnection resistance between the planar inductor (201) and first and second capacitor (205, 207) and also increasing the Q factor of the L-C resonator.
摘要翻译：高Q积分电感器 - 电容器（LC）谐振器（200）包括具有多个匝的平面电感器（201）和串联连接的第一和第二电容器（205,207），其平行于平面电感器（201））。第一和第二电容器（205,207）位于平面电感器（201）的至少一圈内，用于减小平面电感器（201）与第一和第二电容器（205,207）之间的寄生互连电阻，并且还增加 LC谐振器的Q因子。

4. 发明授权

US6069397A Integrable using amorphous magnetic material circuit inductor 失效
标题翻译：可采用非晶磁材料回路电感
公开(公告)号：US6069397A
公开(公告)日：2000-05-30
申请号：US943255
申请日：1997-10-03
申请人： Kenneth D. Cornett , E. S. Ramakrishnan , Gary H. Shapiro , Wei-Yean Howng
发明人： Kenneth D. Cornett , E. S. Ramakrishnan , Gary H. Shapiro , Wei-Yean Howng
IPC分类号： H01L23/522 , H01L29/41
CPC分类号： H01L23/5227 , H01L2924/0002
摘要： An integrable circuit inductor (220) is formed from a patterned conductive material (110) that has a major portion completely encapsulated by a material (221, 223) that is substantially electrically non-conductive, and that has a magnetic response at the operating frequency of the inductor (220). Preferably, an amorphous ferrite material is used for encapsulation, which provides a closed magnetic flux path for the inductor (220) when processing a signal at its operating frequency.
摘要翻译：可集成电路电感器（220）由图案化的导电材料（110）形成，该导电材料具有完全由基本上不导电的材料（221,223）封装的主要部分，并且在工作频率处具有磁响应的电感器（220）。优选地，非晶铁氧体材料用于封装，当在其工作频率处理信号时，其提供用于电感器（220）的闭合磁通路径。

5. 发明授权

US5965912A Variable capacitor and method for fabricating the same 失效
标题翻译：可变电容器及其制造方法
公开(公告)号：US5965912A
公开(公告)日：1999-10-12
申请号：US929123
申请日：1997-09-03
申请人： David Lewis Stolfa , Kenneth D. Cornett
发明人： David Lewis Stolfa , Kenneth D. Cornett
IPC分类号： H01L27/04 , H01L21/822 , H01L29/94 , H01L27/108 , H01L29/76 , H01L29/93
CPC分类号： H01L29/94
摘要： A voltage variable capacitor (10) fabricated on a semiconductor substrate (11) includes a gate structure (62) and a well (22) under the gate structure (62). A heavily doped buried layer (15) and a heavily doped contact region (31) in the semiconductor substrate (11) form a low resistance conduction path from the well (22) to a surface (17) of the semiconductor substrate (11). A multi-finger layout is used to construct the voltage variable capacitor (10). In operation, when a voltage applied across the voltage variable capacitor (10) changes, the width of depletion region in the well (22) changes, and the capacitance of the voltage variable capacitor (10) varies accordingly.
摘要翻译：制造在半导体衬底（11）上的电压可变电容器（10）包括栅极结构（62）下面的栅极结构（62）和阱（22）。半导体衬底（11）中的重掺杂掩埋层（15）和重掺杂接触区（31）形成从阱（22）到半导体衬底（11）的表面（17）的低电阻传导路径。多指布局用于构建电压可变电容器（10）。在操作中，当施加在电压可变电容器（10）两端的电压改变时，阱（22）中的耗尽区域的宽度变化，并且电压可变电容器（10）的电容相应地变化。

6. 发明授权

US5933316A Method for forming a titanate thin film on silicon, and device formed thereby 失效
标题翻译：在硅上形成钛酸盐薄膜的方法，以及由此形成的器件
公开(公告)号：US5933316A
公开(公告)日：1999-08-03
申请号：US100226
申请日：1993-08-02
申请人： Ed S. Ramakrishnan , Kenneth D. Cornett , Wei-Yean Howng
发明人： Ed S. Ramakrishnan , Kenneth D. Cornett , Wei-Yean Howng
IPC分类号： H01L21/314 , H01L21/316 , H01G4/10 , H01G4/06
CPC分类号： H01L21/02197 , H01L21/02266 , H01L21/31691
摘要： A method for forming a dielectric layer onto a substrate having a silicon surface includes initially depositing an oxidizable metal thin film onto the surface and thereafter depositing a thin film of a metal titanate compound, such as the zirconium titanate. The metal thin film is preferably formed of tantalum, titanium or zirconium. Following deposition of the metal titanate thin film, the metal titanate is annealed by heating in an oxidizing atmosphere at a temperature effective to recrystalize the titanate to increase the dielectric properties. During annealing, the metal film reacts with oxygen to form a metal oxide thin film intermediate the metal titanate thin film and the silicon surface. The oxidation of the metal thin film inhibits oxidation of the underlying silicon that would otherwise reduce the effective capacitance of the dielectric layer. The resulting coated substrate thus includes a dielectric layer that includes a thin film of the oxidized metal and an oxygen-annealed metal titanate thin film and exhibits an increased effective capacitance and improved dielectric properties, particularly in comparison to a comparable oxygen-annealed titanate films formed directly onto silicon surfaces.
摘要翻译：在具有硅表面的基板上形成电介质层的方法包括首先在表面上沉积可氧化金属薄膜，然后沉积钛酸钛酸盐化合物的薄膜，例如钛酸锆。金属薄膜优选由钽，钛或锆形成。在钛酸金属薄膜沉积之后，通过在有效使钛酸盐重结晶的温度下在氧化气氛中加热来对金属钛酸盐进行退火以提高介电性能。在退火过程中，金属膜与氧反应形成金属钛酸盐薄膜和硅表面之间的金属氧化物薄膜。金属薄膜的氧化抑制下面的硅的氧化，否则会降低介电层的有效电容。因此，所形成的涂覆基板包括包含氧化金属的薄膜和氧退火的金属钛酸盐薄膜的电介质层，并且具有增加的有效电容和改进的介电性能，特别是与形成的相当的氧退火的钛酸盐膜相比直接在硅表面上。

7. 发明授权

US5379008A Variable impedance circuit providing reduced distortion 失效
标题翻译：可变阻抗电路提供减小的失真
公开(公告)号：US5379008A
公开(公告)日：1995-01-03
申请号：US25458
申请日：1993-03-03
申请人： David E. Bockelman , Robert E. Stengel , Kenneth D. Cornett
发明人： David E. Bockelman , Robert E. Stengel , Kenneth D. Cornett
IPC分类号： H03H7/06 , H03H7/00 , H03H5/12
CPC分类号： H03H7/06
摘要： An electronic circuit (300) includes first (302) and second (304) variable impedance devices coupled together. The first (302) and second (304) variable impedance devices are designed such that each exhibits a transfer function which is substantially inverse with respect to the other about the operating point of the electronic circuit. This provides for an electronic circuit which exhibits very low distortion characteristics. Circuits such as tunable filters, voltage-controlled oscillators (VCOs), receivers, etc. will benefit from using an electronic circuit (300) which exhibits such low distortion characteristics.
摘要翻译：电子电路（300）包括耦合在一起的第一（302）和第二（304）可变阻抗器件。第一（302）和第二（304）可变阻抗装置被设计成使得每个展现出相对于另一个绕电子电路的工作点基本上相反的传递函数。这提供了具有非常低失真特性的电子电路。诸如可调谐滤波器，压控振荡器（VCO），接收器等的电路将受益于使用具有这种低失真特性的电子电路（300）。

8. 发明授权

US6157822A Tuned low power/low noise mixer 失效
标题翻译：调谐低功率/低噪声混频器
公开(公告)号：US6157822A
公开(公告)日：2000-12-05
申请号：US349836
申请日：1999-07-08
申请人： Babak Bastani , Kenneth D. Cornett
发明人： Babak Bastani , Kenneth D. Cornett
IPC分类号： H03D7/14 , H04B1/28 , H04B1/16
CPC分类号： H04B1/28 , H03D7/1433 , H03D7/1458 , H03D2200/0084
摘要： A tuned low noise mixer (200) for use in radio frequency (RF) communications includes a transconductance amplifier (203) for amplifying an RF input signal (201). An impedance matching network (207) is formed using an impedance matching transformer with a tap connection (207') between primary and secondary coils. A mixer circuit (209) is then used for mixing a local oscillator signal (211) with the output of the impedance matching network (207) while a load network (213) provides a load to an output (215) of the mixer circuit (209). The invention provides a novel RF mixer topology that has a substantially low noise figure and a proportionally large power gain with low current drain for eliminating the need for an low noise amplifier (LNA) commonly used in RF mixer circuitry.
摘要翻译：用于射频（RF）通信的调谐低噪声混频器（200）包括用于放大RF输入信号（201）的跨导放大器（203）。使用阻抗匹配变压器在初级线圈和次级线圈之间具有抽头连接（207'）形成阻抗匹配网络（207）。然后，混合器电路（209）用于将本地振荡器信号（211）与阻抗匹配网络（207）的输出混合，而负载网络（213）向混频器电路的输出（215）提供负载 209）。本发明提供了一种新颖的RF混频器拓扑，其具有基本上低的噪声系数和具有低电流消耗的比例大的功率增益，以消除对RF混频器电路中通常使用的低噪声放大器（LNA）的需要。

9. 发明授权

US5495208A Wide band tunable and modulatable reference oscillator 失效
标题翻译：宽带可调谐和可调参考振荡器
公开(公告)号：US5495208A
公开(公告)日：1996-02-27
申请号：US226514
申请日：1994-04-04
申请人： Armando J. Gonzalez , Kenneth D. Cornett , Jaime A. Borras
发明人： Armando J. Gonzalez , Kenneth D. Cornett , Jaime A. Borras
IPC分类号： H03B1/00 , H03C3/09 , H03L1/02 , H03B5/32 , H04B1/26
CPC分类号： H03L1/022 , H03B5/1203 , H03B5/1231 , H03B5/124 , H03B5/368 , H03C3/09 , H03B2200/0008 , H03B2200/0012 , H03B2201/0291
摘要： A tuning circuit for a reference oscillator (200) including voltage variable capacitors (222, 224) in a back to back configuration and providing a control terminal for voltage controlled tuning of the reference oscillator (200). Also included in the tuning circuit is a modulation bias circuit for modulating the reference oscillator (200).
摘要翻译：一种用于参考振荡器（200）的调谐电路，包括背对背配置的电压可变电容器（222,224），并提供用于参考振荡器（200）的压控调谐的控制端子。调谐电路中还包括用于调制参考振荡器（200）的调制偏置电路。

10. 发明授权

US07321331B2 Method and apparatus for transmitting location data within an ad-hoc communication system 有权
标题翻译：用于在自组织通信系统内发送位置数据的方法和装置
公开(公告)号：US07321331B2
公开(公告)日：2008-01-22
申请号：US10787987
申请日：2004-02-26
申请人： Oleg Andric , Vernon A. Allen , Minh T. Pham , Kenneth D. Cornett , Spyros Kyperountas
发明人： Oleg Andric , Vernon A. Allen , Minh T. Pham , Kenneth D. Cornett , Spyros Kyperountas
IPC分类号： G01S1/00
CPC分类号： H04L45/02
摘要： To reduce interference and increase battery life, a method and apparatus for transmitting location data within an ad-hoc communication system is provided herein. During operation, a portion of a beacon payload is reserved to broadcast location information (coordinates) for a node as well as other parameters that may be needed for location estimation. In addition to a node's location, an accuracy of the nodes location is also included within the beacon field. Because nodes will no longer have to awake outside their beacon transmit times to broadcast location information, battery life is extended. In addition, because nodes will no longer be transmitting location information outside their guaranteed time slot, system interference is also reduced.
摘要翻译：为了减少干扰并延长电池寿命，本文提供了一种用于在自组织通信系统内发送位置数据的方法和装置。在操作期间，保留信标有效载荷的一部分以广播节点的位置信息（坐标）以及可能需要用于位置估计的其它参数。除了节点的位置之外，节点位置的精度也包括在信标域内。因为节点不再需要在其信标发射时间之外唤醒广播位置信息，所以电池寿命延长。另外，由于节点不再在其保证时隙之外发送位置信息，系统干扰也降低。

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