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    • 3. 发明授权
    • Plasma processing method and plasma processing apparatus
    • 等离子体处理方法和等离子体处理装置
    • US06287980B1
    • 2001-09-11
    • US09415910
    • 1999-10-12
    • Minoru HanazakiTakayuki IkushimaKenji ShirakawaShinji YamaguchiMasakazu Taki
    • Minoru HanazakiTakayuki IkushimaKenji ShirakawaShinji YamaguchiMasakazu Taki
    • H01L2100
    • H01L21/67069H01J37/3244
    • A plasma processing apparatus mainly comprises a processing chamber (10) formed by a vacuum vessel, a magnetic field forming coil (80) arranged around the processing chamber for forming a rotating magnetic field and gas supply means (101) supplying various gases to the processing chamber (10). The processing chamber (10) is divided into a reaction chamber (44) forming plasma with a partition wall (43) and a buffer chamber (45) discharging externally supplied gases with pressure difference. The reaction chamber (44) includes a high-frequency electrode arranged oppositely to the buffer chamber (45). The gas supply means (101) includes pulse gas valves (63a and 63b) for pulsatively supplying gases to the processing chamber (10). Thus provided are a plasma processing method and a plasma processing apparatus capable of uniformly processing a wafer having a large diameter and reducing RIE lag with respect to a fine etching pattern.
    • 一种等离子体处理装置主要包括由真空容器形成的处理室(10),设置在处理室周围的用于形成旋转磁场的磁场形成线圈(80),以及将各种气体供应至处理的气体供给装置 室(10)。 处理室(10)被分为形成等离子体的反应室(44)和分隔壁(43)以及缓冲室(45),该压力室排出外部供应压力差的气体。 反应室(44)包括与缓冲室(45)相对布置的高频电极。 气体供给装置(101)包括用于向处理室(10)脉动地供给气体的脉冲气体阀(63a和63b)。 这样提供了一种等离子体处理方法和等离子体处理装置,其能够均匀地处理具有大直径的晶片并且相对于精细蚀刻图案减小RIE滞后。