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1. 发明授权

US4630237A Read-only memory and method of manufacturing the same 失效
标题翻译：只读存储器及其制造方法
公开(公告)号：US4630237A
公开(公告)日：1986-12-16
申请号：US759009
申请日：1985-07-24
申请人： Kenji Miura , Shigeru Nakajima , Kazushige Minegishi , Toshifumi Somatani , Takashi Morie , Tatsuo Baba
发明人： Kenji Miura , Shigeru Nakajima , Kazushige Minegishi , Toshifumi Somatani , Takashi Morie , Tatsuo Baba
IPC分类号： G11C17/08 , H01L21/8246 , H01L21/8247 , H01L27/10 , H01L27/112 , H01L27/115 , H01L29/78 , G11C11/40 , G11C13/00
CPC分类号： H01L29/7827 , H01L2924/0002 , Y10S257/903
摘要： A read-only memory has memory cells each with a vertical metal oxide semiconductor field effect transistor and a bit line. The vertical metal oxide semiconductor field effect transistor has a gate electrode serving as a word line, a source, a drain, and a vertical channel region between the source and drain constituted by first and second diffusion layers. The gate electrode is formed on a side wall of a trench, which has a pair of side walls substantially perpendicular to a major surface of a semiconductor substrate of a first conductivity type and an interconnecting bottom surface substantially perpendicular to the side wall surfaces. The first and second diffusion layers of a second conductivity type are formed in an upper portion of the semiconductor substrate and in a bottom of the trench, respectively. The bit lines are formed in a predetermined pattern. One of the first and second diffusion layers is connected to the bit line through a contact hole and the other of the first and second diffusion layers is used as a common current line. A method of manufacturing the read-only memory is also proposed.
摘要翻译：只读存储器具有各自具有垂直金属氧化物半导体场效应晶体管和位线的存储单元。垂直金属氧化物半导体场效应晶体管具有用作由第一和第二扩散层构成的源极和漏极之间的字线，源极，漏极和垂直沟道区的栅电极。栅电极形成在沟槽的侧壁上，沟槽的侧壁具有基本上垂直于第一导电类型的半导体衬底的主表面的一对侧壁和基本上垂直于侧壁表面的互连底表面。第二导电类型的第一和第二扩散层分别形成在半导体衬底的上部和沟槽的底部。位线以预定图案形成。第一和第二扩散层中的一个通过接触孔连接到位线，并且第一和第二扩散层中的另一个用作公共电流线。还提出了制造只读存储器的方法。

2. 发明授权

US4672410A Semiconductor memory device with trench surrounding each memory cell 失效
标题翻译：具有围绕每个存储单元的沟槽的半导体存储器件
公开(公告)号：US4672410A
公开(公告)日：1987-06-09
申请号：US753283
申请日：1985-07-09
申请人： Kenji Miura , Shigeru Nakajima , Kazushige Minegishi , Takashi Morie , Toshifumi Somatani
发明人： Kenji Miura , Shigeru Nakajima , Kazushige Minegishi , Takashi Morie , Toshifumi Somatani
IPC分类号： H01L21/20 , H01L21/225 , H01L21/8242 , H01L27/10 , H01L27/108 , H01L29/78 , H01L29/94 , H01L27/02 , H01L29/04 , H01L29/06
CPC分类号： H01L27/10864 , H01L21/2257 , H01L27/10841 , H01L29/7827 , H01L29/945
摘要： A semiconductor device has memory cells respectively located at intersections of bit and word lines arranged in a matrix form, each of the memory cells being constituted by a single insulated gate transistor and a single capacitor. One memory cell is formed in an element formation region defined by each of trenches arranged in a matrix form. The capacitor has an insulating film formed along part of a side wall surface of a trench formed in at least a direction of thickness of a semiconductor substrate and a conductive layer formed along the insulating film. The transistor has a gate insulating film adjacent to the capacitor and formed along a remaining portion of the side wall surface of the trench, a gate electrode formed along the gate insulating film, and a diffusion region formed in a major surface of the semiconductor substrate which is adjacent to the gate insulating film. The semicondcutor memory device further has an isolation region between two adjacent ones of the memory cells along two adjacent ones of the bit or word lines. A method of manufacturing the semiconductor is also proposed.
摘要翻译：半导体器件具有分别位于以矩阵形式布置的位和字线的交点处的存储器单元，每个存储器单元由单个绝缘栅晶体管和单个电容器构成。一个存储单元形成在由以矩阵形式布置的每个沟槽限定的元件形成区域中。电容器具有沿至少沿着半导体衬底的厚度方向形成的沟槽的侧壁表面的一部分和沿绝缘膜形成的导电层形成的绝缘膜。晶体管具有与电容器相邻的栅极绝缘膜，沿着沟槽的侧壁表面的剩余部分形成，沿着栅极绝缘膜形成的栅电极和形成在半导体衬底的主表面中的扩散区域与栅极绝缘膜相邻。半切割器存储器件还沿着位或字线中的两个相邻的存储器单元中的两个相邻存储单元之间具有隔离区。还提出了制造半导体的方法。

3. 发明授权

US4683643A Method of manufacturing a vertical MOSFET with single surface electrodes 失效
标题翻译：制造具有单面电极的垂直MOSFET的方法
公开(公告)号：US4683643A
公开(公告)日：1987-08-04
申请号：US756135
申请日：1985-07-16
申请人： Shigeru Nakajima , Kazushige Minegishi , Kenji Miura , Takashi Morie , Toshifumi Somatani
发明人： Shigeru Nakajima , Kazushige Minegishi , Kenji Miura , Takashi Morie , Toshifumi Somatani
IPC分类号： H01L29/417 , H01L29/78 , H01L21/385 , H01L21/388 , H01L21/40
CPC分类号： H01L29/7827 , Y10S148/168
摘要： A vertical metal oxide semiconductor field effect transistor has a trench substantially vertically formed in a major surface of a semiconductor substrate, a first conductive layer formed in a predetermined region including a side wall surface of the trench on a gate insulating film, lower and upper diffusion layers formed in the bottom of the trench and a surface layer of the semiconductor substrate, preferably a channel doped region formed in the semiconductor substrate between the upper and lower diffusion layers, and a second conductive layer formed in contact with the lower diffusion layer in the bottom of the trench and insulated from the first conductive layer so as to fill the trench. The first conductive layer serves as a gate electrode, and the diffusion layers serves as source/drain regions, respectively. A method of manufacturing the vertical MOSFET is also proposed.
摘要翻译：垂直金属氧化物半导体场效应晶体管具有在半导体衬底的主表面上基本上垂直形成的沟槽，形成在包括栅极绝缘膜上的沟槽的侧壁表面的预定区域中的第一导电层，下部和上部扩散形成在沟槽的底部的层和半导体衬底的表面层，优选地形成在上部和下部扩散层之间的半导体衬底中的沟道掺杂区域，以及形成在第二导电层中的下部扩散层并且与第一导电层绝缘以便填充沟槽。第一导电层用作栅电极，扩散层分别用作源/漏区。还提出了制造垂直MOSFET的方法。

4. 发明授权

US4786953A Vertical MOSFET and method of manufacturing the same 失效
标题翻译：垂直MOSFET及其制造方法
公开(公告)号：US4786953A
公开(公告)日：1988-11-22
申请号：US48702
申请日：1987-05-12
申请人： Takashi Morie , Toshifumi Somatani , Shigeru Nakajima , Kazushige Minegishi , Kenji Miura
发明人： Takashi Morie , Toshifumi Somatani , Shigeru Nakajima , Kazushige Minegishi , Kenji Miura
IPC分类号： H01L29/78 , H01L27/02 , H01L29/04 , H01L29/06
CPC分类号： H01L29/7827
摘要： A vertical metal oxide semiconductor field effect transistor has a trench substantially vertically formed in a major surface of a semiconductor substrate, a first conductive layer formed in a predetermined region including a side wall surface of the trench on a gate insulating film, lower and upper diffusion layers formed in the bottom of the trench and a surface layer of the semiconductor substrate, preferably a channel doped region formed in the semiconductor substrate between the upper and lower diffusion layers, and a second conductive layer formed in contact with the lower diffusion layer in the bottom of the trench and insulated from the first conductive layer so as to fill the trench. The first conductive layer serves as a gate electrode, and the diffusion layers serves as source/drain regions, respectively. A method of manufacturing the vertical MOSFET is also proposed.
摘要翻译：垂直金属氧化物半导体场效应晶体管具有在半导体衬底的主表面上基本上垂直形成的沟槽，形成在包括栅极绝缘膜上的沟槽的侧壁表面的预定区域中的第一导电层，下部和上部扩散形成在沟槽的底部的层和半导体衬底的表面层，优选地形成在上部和下部扩散层之间的半导体衬底中的沟道掺杂区域，以及形成在第二导电层中的下部扩散层并且与第一导电层绝缘以便填充沟槽。第一导电层用作栅电极，扩散层分别用作源/漏区。还提出了制造垂直MOSFET的方法。

5. 发明授权

US09022597B2 Line light irradiation device and manufacturing method thereof 有权
标题翻译：线光照射装置及其制造方法
公开(公告)号：US09022597B2
公开(公告)日：2015-05-05
申请号：US13978522
申请日：2012-02-16
申请人： Ryoko Suzuki , Kenji Miura
发明人： Ryoko Suzuki , Kenji Miura
IPC分类号： F21S4/00 , F21V17/16 , G01N21/88 , F21V15/01 , F21Y101/02 , F21V5/04
CPC分类号： F21V29/76 , F21S4/28 , F21V5/043 , F21V15/013 , F21V17/16 , F21V29/507 , F21Y2115/10 , G01N21/8806 , Y10T29/49872
摘要： The present invention includes: a casing having a bottom wall part and a pair of side wall parts extending upward from this bottom wall part; a rod-shaped lens provided above an LED substrate and along a longitudinal direction inside the casing; and a fixing mechanism for fixing the lens to the pair of side wall parts. The fixing mechanism includes: upwardly facing surfaces longitudinally extending along an inner surface of the side wall parts; downwardly facing surfaces longitudinally extending along side peripheral surfaces of the lens; a concave groove longitudinally extending above the upwardly facing surface on the inner surface of each of the side wall parts; and elastic bodies fitting into the concave grooves to be in contact with the side peripheral surfaces of the lens in a state that the downwardly facing surfaces are in contact with the upwardly facing surfaces.
摘要翻译：本发明包括：壳体，其具有从该底壁部向上延伸的底壁部和一对侧壁部; 设置在LED基板上方且沿着壳体内的长度方向的杆状透镜; 以及用于将透镜固定到一对侧壁部分的固定机构。固定机构包括：沿着侧壁部分的内表面纵向延伸的朝上的表面; 沿着透镜的侧面周向纵向延伸的面向下的表面; 在每个所述侧壁部分的内表面上在所述面向上的表面上纵向延伸的凹槽; 以及在向下的表面与向上的表面接触的状态下，装配到凹槽中的与透镜的侧周面接触的弹性体。

6. 发明授权

US08777450B2 Light irradiation device 有权
标题翻译：光照射装置
公开(公告)号：US08777450B2
公开(公告)日：2014-07-15
申请号：US13054921
申请日：2009-06-01
申请人： Kenji Miura
发明人： Kenji Miura
IPC分类号： F21S4/00
CPC分类号： G01N21/8806 , G01N2201/0627
摘要： The present invention uniforms a size of an LED substrate 2 to realize reduction of the number of parts and reduction of a manufacturing cost, and is a light irradiation device comprising: a long LED substrate 2 on which a plurality of same LEDs 21 are mounted; a chassis 3 having a substrate housing space for housing the LED substrate 2, wherein the number of LEDs 21 in which a difference between a power source voltage VE and a sum of a forward voltage Vf in the series connection of the LEDs 21 is within an allowable range is employed as the number of LED units, and the number of LEDs 21 mounted on the LED substrate 2 is a common multiple of the number of LED units determined in each of LEDs 21 of different wavelengths.
摘要翻译：本发明使LED基板2的尺寸均匀化，实现部件数量的减少和制造成本的降低，是一种光照射装置，包括：长LED基板2，多个相同的LED21安装在该LED基板2上; 具有用于容纳LED基板2的基板容纳空间的底架3，其中，LED 21的串联连接中的电源电压VE与正向电压Vf的和之间的差异的LED 21的数量在采用允许范围作为LED单元的数量，并且安装在LED基板2上的LED 21的数量是在每个不同波长的LED 21中确定的LED单元的数量的公倍数。

7. 发明申请

US20130163249A1 LED WIRING BOARD AND LIGHT IRRADIATION APPARATUS 审中-公开
标题翻译： LED接线板和光线照射设备
公开(公告)号：US20130163249A1
公开(公告)日：2013-06-27
申请号：US13821542
申请日：2011-08-23
申请人： Kenji Miura
发明人： Kenji Miura
IPC分类号： F21V21/00 , B26D1/24
CPC分类号： H05K3/0052 , F21Y2105/10 , F21Y2115/10 , H05K1/0287 , H05K2201/0909 , H05K2201/093 , H05K2201/10106 , H05K2203/0228 , H05K2203/175 , Y10T83/0581
摘要： It is an object of the present invention to permit division of an LED wiring board into various sizes to permit its use before and after the division, and also simplify operation of this division and simplify circuit design. More specifically, in the present invention, wiring patterns and for energizing LEDs are formed in a planar direction of the LED wiring board. Division grooves for dividing the LED wiring board into a plurality of sub-boards are formed on the front surface of the LED wiring board in a perpendicular direction and are provided in a manner such as to cross the wiring patterns in the planar direction. Use with the entire board before the division by the division grooves is possible, and use with division elements divided along any of the division grooves is also possible.
摘要翻译：本发明的目的是允许将LED布线板划分成各种尺寸以允许其在划分之前和之后的使用，并且还简化该划分的操作并简化电路设计。更具体地，在本发明中，在LED布线板的平面方向上形成布线图案和用于激励LED的布线图案。在LED布线板的正面垂直方向上形成用于将LED布线板分割为多个子板的分割槽，并且以与平面方向交叉的方式设置。在通过分割槽进行分割之前可以使用整个板，并且可以沿着任何分割槽划分的分割元件使用。

8. 发明申请

US20130162829A1 PARKING ASSISTANCE DEVICE 有权
标题翻译：停车辅助装置
公开(公告)号：US20130162829A1
公开(公告)日：2013-06-27
申请号：US13817231
申请日：2011-08-22
申请人： Jun Kadowaki , Yu Tanaka , Kenji Miura , Tetsuya Maruoka
发明人： Jun Kadowaki , Yu Tanaka , Kenji Miura , Tetsuya Maruoka
IPC分类号： H04N7/18
CPC分类号： H04N7/18 , B60R1/00 , B60R2300/806 , B62D15/028 , B62D15/0285
摘要： A parking assistance device with a simple configuration that flexibly guides a vehicle to a reverse start position in assisting reverse parking computes a guide route for allowing the vehicle to move forward to a reverse start position and then reverse to the parking target and the reverse start position based on the parking target with a predetermined tolerance included, generates forward guide markers constituted by a marker group including a far marker corresponding to the reverse start position and a near marker that represents an area via which the vehicle can reach the reverse start position and is located closer to the vehicle than the far marker, the forward guide markers indicating a forward route to the reverse start position by an arrangement of the marker group the width of which is increased toward the near marker from the far marker, and superimpose the markers on the surrounding image.
摘要翻译：具有简单构造的停车辅助装置，其在辅助反向停车时将车辆灵活地引导到反向起始位置，计算引导路线，以允许车辆向前移动到反向起始位置，然后与停车目标和反向起始位置相反基于具有预定公差的停车目标产生由包括对应于反向开始位置的远标记的标记组构成的前向引导标记和表示车辆可以到达反向起始位置的区域的近标记，并且是位于比远标记更靠近车辆的位置，前向引导标记指示通过标记组的布置指示向前开始位置的前进路线，其宽度从远标记向近标记增加，并将标记叠加在周围的图像。

9. 发明授权

US08470974B2 Method for highly sensitive detection of protein-protein interaction 有权
标题翻译：高灵敏度检测蛋白质 - 蛋白质相互作用的方法
公开(公告)号：US08470974B2
公开(公告)日：2013-06-25
申请号：US13375142
申请日：2010-05-28
申请人： Takeaki Ozawa , Naomi Misawa , Kenji Miura , Tasuku Okamoto , Shigeaki Nishii , Kenji Masuda
发明人： Takeaki Ozawa , Naomi Misawa , Kenji Miura , Tasuku Okamoto , Shigeaki Nishii , Kenji Masuda
IPC分类号： C07K1/00 , C12Q1/00 , G01N33/53 , C12P21/04 , A61K39/02
CPC分类号： C12Q1/6804 , C12N9/0069 , C12Q1/66 , G01N33/542
摘要： The present invention intends to provide an assay system using split luciferase that has a remarkably high detection sensitivity. In an embodiment, binding of mutually binding first and second proteins is detected by preparing a first fusion protein comprising the first protein fused with a peptide having the amino acid sequence of amino acid SEQ ID NO: 1 and a second fusion protein comprising the second protein fused with a peptide having an amino acid sequence selected from the group consisting of amino acid SEQ ID NOS: 2 to 6, and allowing the first fusion protein to bind with the second fusion protein to form a complex, and detecting luminescence emitted from the complex.
摘要翻译：本发明意图提供一种使用分辨荧光素酶的测定系统，其具有非常高的检测灵敏度。在一个实施方案中，通过制备包含与具有氨基酸SEQ ID NO：1的氨基酸序列的肽融合的第一蛋白质的第一融合蛋白和包含第二蛋白质的第二融合蛋白来检测相互结合的第一和第二蛋白质的结合与具有选自氨基酸SEQ ID NO：2至6的氨基酸序列的肽融合，并使第一融合蛋白与第二融合蛋白结合形成复合物，并检测从复合物发射的发光。

10. 发明授权

US08436375B2 Light illuminating device 失效
标题翻译：灯光照明装置
公开(公告)号：US08436375B2
公开(公告)日：2013-05-07
申请号：US13054073
申请日：2009-06-01
申请人： Kenji Miura
发明人： Kenji Miura
IPC分类号： H01L33/00
CPC分类号： F21V19/0035 , F21S4/28 , F21V5/007 , F21V15/013 , F21V15/015 , F21V17/005 , F21V17/164 , F21V27/02 , F21V29/767 , F21Y2105/10 , F21Y2115/10 , G01N21/8806
摘要： To reliably keep an LED board and a heat conductive member in close contact to improve the heat-dissipation efficiency and to reliably position an LED and an optical element, such as a lens part, arranged in a housing are a slim LED board, the housing that has an accommodating concave part to house the LED board, a heat conductive member that is arranged between the LED board and the accommodating concave part, a pressing member that has the lens part and that presses a long side edge part of the LED board against a bottom surface of the accommodating concave part of the housing, a securing mechanism for securing the LED board, the heat conductive member and the pressing member to the housing, and a positioning mechanism for positioning the lens part relative to the LED.
摘要翻译：为了可靠地保持LED板和导热构件的紧密接触以提高散热效率并且可靠地定位LED和布置在壳体中的诸如透镜部分的光学元件是超薄LED板，壳体具有用于容纳LED基板的容纳凹部，配置在LED基板和容纳凹部之间的导热部件，具有透镜部并且将LED基板的长边缘部分按压的按压部件抵靠壳体的容纳凹部的底面，用于将LED基板，导热构件和按压构件固定到壳体的固定机构，以及用于相对于LED定位透镜部的定位机构。

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