专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20050145967A1 Semiconductor light-receiving module capable of converting light into current efficiently at light absorbing layer 失效
公开(公告)号：US20050145967A1
公开(公告)日：2005-07-07
申请号：US11054747
申请日：2005-02-09
申请人： Kenji Kawano , Hiroaki Yoshidaya , Jun Hiraoka , Eiji Kawazura , Satoshi Matsumoto
发明人： Kenji Kawano , Hiroaki Yoshidaya , Jun Hiraoka , Eiji Kawazura , Satoshi Matsumoto
IPC分类号： G02B6/12 , G02B6/42 , H01L31/0232 , H01L31/0203
CPC分类号： G02B6/12004 , G02B6/42 , G02B6/4295 , H01L31/02327
摘要： A semiconductor light-receiving module includes a semiconductor light-receiving element and an incident light direction device. The semiconductor light-receiving element includes a substrate, at least a light absorbing layer and an upper cladding layer formed sequentially on the substrate, a light incident facet formed at least at one facet of the substrate and the light absorbing layer, and electrodes which output an electric signal generated by absorption of the light entering from the light incident facet in the light absorbing layer. The incident light direction device directs to irradiate the light obliquely to the light incident facet of the semiconductor light-receiving element, and to cause at least part of the light to irradiate the light absorbing layer at the light incident facet.

2. 发明授权

US06909160B2 Semiconductor light-receiving module capable of converting light into current efficiently at light absorbing layer 失效
公开(公告)号：US06909160B2
公开(公告)日：2005-06-21
申请号：US10618424
申请日：2003-07-11
申请人： Kenji Kawano , Hiroaki Yoshidaya , Jun Hiraoka , Yuichi Sasaki , Eiji Kawazura , Satoshi Matsumoto
发明人： Kenji Kawano , Hiroaki Yoshidaya , Jun Hiraoka , Yuichi Sasaki , Eiji Kawazura , Satoshi Matsumoto
IPC分类号： G02B6/12 , G02B6/42 , H01L31/0232
CPC分类号： G02B6/12004 , G02B6/42 , G02B6/4295 , H01L31/02327
摘要： A semiconductor light-receiving module includes a semiconductor light-receiving element and an incident light direction device. The semiconductor light-receiving element includes a substrate, at least a light absorbing layer and an upper cladding layer formed sequentially on the substrate, a light incident facet formed at least at one facet of the substrate and the light absorbing layer, and electrodes which output an electric signal generated by absorption of the light entering from the light incident facet in the light absorbing layer. The incident light direction device directs to irradiate the light obliquely to the light incident facet of the semiconductor light-receiving element, and to cause at least part of the light to irradiate the light absorbing layer at the light incident facet.

3. 发明授权

US07372123B2 Semiconductor light-receiving module capable of converting light into current efficiently at light absorbing layer 失效
标题翻译：能够在光吸收层有效地将光转换成电流的半导体光接收模块
公开(公告)号：US07372123B2
公开(公告)日：2008-05-13
申请号：US11054747
申请日：2005-02-09
申请人： Kenji Kawano , Hiroaki Yoshidaya , Jun Hiraoka , Eiji Kawazura , Satoshi Matsumoto
发明人： Kenji Kawano , Hiroaki Yoshidaya , Jun Hiraoka , Eiji Kawazura , Satoshi Matsumoto
IPC分类号： H01L29/732
CPC分类号： G02B6/12004 , G02B6/42 , G02B6/4295 , H01L31/02327
摘要： A semiconductor light-receiving module includes a semiconductor light-receiving element and an incident light direction device. The semiconductor light-receiving element includes a substrate, at least a light absorbing layer and an upper cladding layer formed sequentially on the substrate, a light incident facet formed at least at one facet of the substrate and the light absorbing layer, and electrodes which output an electric signal generated by absorption of the light entering from the light incident facet in the light absorbing layer. The incident light direction device directs to irradiate the light obliquely to the light incident facet of the semiconductor light-receiving element, and to cause at least part of the light to irradiate the light absorbing layer at the light incident facet.
摘要翻译：半导体光接收模块包括半导体光接收元件和入射光方向装置。半导体光接收元件包括基板，至少在基板上形成的光吸收层和上包层，至少在基板和光吸收层的一个面上形成的光入射面，以及输出的电极通过吸收从光吸收层中的光入射小面入射的光产生的电信号。入射光方向装置指向与半导体光接收元件的光入射面倾斜地照射光，并使至少一部分光在光入射面照射光吸收层。

4. 发明申请

US20050145966A1 Semiconductor light-receiving module capable of converting light into current efficiently at light absorbing layer 失效
标题翻译：能够在光吸收层有效地将光转换成电流的半导体光接收模块
公开(公告)号：US20050145966A1
公开(公告)日：2005-07-07
申请号：US11054746
申请日：2005-02-09
申请人： Kenji Kawano , Hiroaki Yoshidaya , Jun Hiraoka , Yuichi Sasaki , Eiji Kawazura , Satoshi Matsumoto
发明人： Kenji Kawano , Hiroaki Yoshidaya , Jun Hiraoka , Yuichi Sasaki , Eiji Kawazura , Satoshi Matsumoto
IPC分类号： G02B6/12 , G02B6/42 , H01L31/0232 , H01L31/0203
CPC分类号： G02B6/12004 , G02B6/42 , G02B6/4295 , H01L31/02327
摘要： A semiconductor light-receiving module includes a semiconductor light-receiving element and an incident light direction device. The semiconductor light-receiving element includes a substrate, at least a light absorbing layer and an upper cladding layer formed sequentially on the substrate, a light incident facet formed at least at one facet of the substrate and the light absorbing layer, and electrodes which output an electric signal generated by absorption of the light entering from the light incident facet in the light absorbing layer. The incident light direction device directs to irradiate the light obliquely to the light incident facet of the semiconductor light-receiving element, and to cause at least part of the light to irradiate the light absorbing layer at the light incident facet.
摘要翻译：半导体光接收模块包括半导体光接收元件和入射光方向装置。半导体光接收元件包括基板，至少在基板上形成的光吸收层和上包层，至少在基板和光吸收层的一个面上形成的光入射面，以及输出的电极通过吸收从光吸收层中的光入射小面入射的光产生的电信号。入射光方向装置指向与半导体光接收元件的光入射面倾斜地照射光，并使至少一部分光在光入射面照射光吸收层。

5. 发明授权

US06756609B2 Semiconductor light receiving element provided with acceleration spacer layers between plurality of light absorbing layers and method for fabricating the same 失效
标题翻译：在多个光吸收层之间设置有加速间隔层的半导体光接收元件及其制造方法
公开(公告)号：US06756609B2
公开(公告)日：2004-06-29
申请号：US10312470
申请日：2002-12-23
申请人： Kenji Kawano , Hiroaki Yoshidaya , Jun Hiraoka , Yuichi Sasaki
发明人： Kenji Kawano , Hiroaki Yoshidaya , Jun Hiraoka , Yuichi Sasaki
IPC分类号： H01L3300
CPC分类号： H01L31/101
摘要： A semiconductor light receiving element has an n electrode, an n-type semiconductor doped layer or a non-doped layer provided above the n electrode, a semiconductor light absorbing layer provided above the n-type semiconductor doped layer or the non-doped layer, a p-type semiconductor doped layer provided above the semiconductor light absorbing layer, and a p electrode provided above the p-type semiconductor doped layer. The semiconductor light absorbing layer has at least two layer portions doped to p-type, and a spacer layer for acceleration which is formed from a semiconductor material sandwiched by the two layer portions and which makes electrons and positive holes generated by incident light being absorbed at the semiconductor light absorbing layer accelerate and run.
摘要翻译：半导体光接收元件具有设置在n电极上方的n电极，n型半导体掺杂层或非掺杂层，设置在n型半导体掺杂层或非掺杂层上方的半导体光吸收层，设置在半导体光吸收层上方的p型半导体掺杂层，以及设置在p型半导体掺杂层上方的p型电极。半导体光吸收层具有掺杂到p型的至少两个层部分和由夹在两层部分之间的半导体材料形成的用于加速的间隔层，并且使由入射光产生的电子和正空穴被吸收在半导体光吸收层加速运行。

6. 发明授权

US07071524B2 Semiconductor light receiving device for repeatedly propagating incident light in light absorption layer and method for manufacturing the same 失效
公开(公告)号：US07071524B2
公开(公告)日：2006-07-04
申请号：US10369469
申请日：2003-02-20
申请人： Kenji Kawano , Hiroaki Yoshidaya , Jun Hiraoka , Yuichi Sasaki
发明人： Kenji Kawano , Hiroaki Yoshidaya , Jun Hiraoka , Yuichi Sasaki
IPC分类号： H01L31/0232 , H01L31/06 , H01L31/00
CPC分类号： G02B6/4206 , G02B6/4203 , H01L31/0232 , H01L31/105
摘要： A lower cladding layer is laminated on a substrate and constituted of at least one layer. A light absorption layer is laminated on the lower cladding layer. An upper cladding layer is laminated above the light absorption layer and constituted of at least one layer. A light incident end surface is provided on at least one of the substrate and the lower cladding layer, and, when a light is made incident at a predetermined angle, enables the light to be absorbed in the light absorption layer and to be output as a current. An equivalent refractive index of the at least one of the substrate and the lower cladding layer is larger than that of the upper cladding layer. The predetermined angle is an angle enabling a light incident into the light absorption layer to be reflected at a lower surface of the upper cladding layer.

7. 发明授权

US07317236B2 Semiconductor light-receiving module capable of converting light into current efficiently at light absorbing layer 失效
公开(公告)号：US07317236B2
公开(公告)日：2008-01-08
申请号：US11054746
申请日：2005-02-09
申请人： Kenji Kawano , Hiroaki Yoshidaya , Jun Hiraoka , Yuichi Sasaki
发明人： Kenji Kawano , Hiroaki Yoshidaya , Jun Hiraoka , Yuichi Sasaki
IPC分类号： H01L31/0232
CPC分类号： G02B6/12004 , G02B6/42 , G02B6/4295 , H01L31/02327
摘要： A semiconductor light-receiving module includes a semiconductor light-receiving element and an incident light direction device. The semiconductor light-receiving element includes a substrate, at least a light absorbing layer and an upper cladding layer formed sequentially on the substrate, a light incident facet formed at least at one facet of the substrate and the light absorbing layer, and electrodes which output an electric signal generated by absorption of the light entering from the light incident facet in the light absorbing layer. The incident light direction device directs to irradiate the light obliquely to the light incident facet of the semiconductor light-receiving element, and to cause at least part of the light to irradiate the light absorbing layer at the light incident facet.

8. 发明申请

US20100209040A1 OPTICAL MODULATOR 失效
标题翻译：光学调制器
公开(公告)号：US20100209040A1
公开(公告)日：2010-08-19
申请号：US12678534
申请日：2008-09-19
申请人： Kenji Kawano , Eiji Kawazura , Yuji Sato , Masaya Nanami , Seiji Uchida , Nobuhiro Igarashi , Toru Nakahira , Satoshi Matsumoto
发明人： Kenji Kawano , Eiji Kawazura , Yuji Sato , Masaya Nanami , Seiji Uchida , Nobuhiro Igarashi , Toru Nakahira , Satoshi Matsumoto
IPC分类号： G02F1/035 , G02B6/12
CPC分类号： G02F1/2255 , G02F2201/07 , G02F2201/12 , G02F2203/21
摘要： In an optical modulator comprising substrate 1 having electro-optical effect, two optical waveguides 3a, 3b formed in the substrate, buffer layer 2 formed on the substrate, traveling-wave electrode 4 having center conductor 4a and ground conductors 4b, 4c above the buffer layer, and ridge sections formed with recessed sections 9a to 9c by carving at least a part of the substrate where an electrical field strength of high-frequency electrical signal propagating the traveling-wave electrode is strong, in which the ridge sections include center conductor ridge section 8a having the center conductor formed above and ground conductor ridge section 8b having the ground conductor formed above, and the center conductor ridge section has one of the two optical waveguides formed therein, the recessed sections are practically symmetrical to the center line between the two optical waveguides and the traveling-wave electrode is practically symmetrical to the center line of the center conductor.
摘要翻译：在具有电光效应的基板1的光调制器中，形成在基板上的两个光波导3a，3b，形成在基板上的缓冲层2，具有中心导体4a的行波电极4和缓冲器上方的接地导体4b，4c 通过雕刻传播行波电极的高频电信号的电场强度强的基板的至少一部分而形成有凹部9a〜9c的层，脊部，其中脊部包括中心导体脊具有上面形成的中心导体的部分8a和具有形成在上面的接地导体的接地导体脊部分8b，并且中心导体脊部分在其中形成的两个光波导中的一个形成，凹部实际上对称于两者之间的中心线光波导和行波电极实际上与中心导体的中心线对称。

9. 发明申请

US20090297087A1 OPTICAL MODULATOR 失效
标题翻译：光学调制器
公开(公告)号：US20090297087A1
公开(公告)日：2009-12-03
申请号：US12471838
申请日：2009-05-26
申请人： Kenji Kawano , Seiji Uchida , Eiji Kawazura , Yuji Sato , Masaya Nanami , Toru Nakahira , Nobuhiro Igarashi , Satoshi Matsumoto
发明人： Kenji Kawano , Seiji Uchida , Eiji Kawazura , Yuji Sato , Masaya Nanami , Toru Nakahira , Nobuhiro Igarashi , Satoshi Matsumoto
IPC分类号： G02F1/035
CPC分类号： G02F1/2255 , G02F2001/212
摘要： Herein disclosed is an optical modulator, having: a substrate (1); and a center and ground electrodes (4a to 4c), in which the substrate has ridge portions (8a to 8c), the center and ground electrodes are respectively formed above the ridge portions, the ridge portions below the center and ground electrodes respectively have top parts (10a, 10b) having a respective first and second end points (18, 19) separated with a distance of “WR”, the substrate has a bottom surface (21b) between the ridge portions having center and midway points (23, 24) positioned with a respective distance of WR/2 and WR/N ( 3 ≦N≦25 ) from the first end point, the ridge portion below the center electrode has a normal line (13), and the center point and the midway point define a straight line (25) crossed with the normal line at an angle larger or equal to 90.1°.
摘要翻译：本文公开了一种光调制器，具有：基板（1）; 以及其中基板具有脊部分（8a至8c）的中心和接地电极（4a至4c），中心接地电极分别形成在脊部上方，中心部分和接地电极下方的脊部分别具有顶部具有以“WR”的距离分开的相应的第一和第二端点（18,19）的部分（10a，10b），所述基板在具有中心点和中间点（23,24）的脊部之间具有底表面）与第一端点分别具有WR / 2和WR / N（3 <= N <= 25）的距离，中心电极下方的脊部具有法线（13），中心点和中间点限定与法线交叉的直线（25），角度大于或等于90.1°。

10. 发明授权

US08204344B2 Optical modulator 失效
标题翻译：光调制器
公开(公告)号：US08204344B2
公开(公告)日：2012-06-19
申请号：US12471838
申请日：2009-05-26
申请人： Kenji Kawano , Seiji Uchida , Eiji Kawazura , Yuji Sato , Masaya Nanami , Toru Nakahira , Nobuhiro Igarashi , Satoshi Matsumoto
发明人： Kenji Kawano , Seiji Uchida , Eiji Kawazura , Yuji Sato , Masaya Nanami , Toru Nakahira , Nobuhiro Igarashi , Satoshi Matsumoto
IPC分类号： G02F1/035
CPC分类号： G02F1/2255 , G02F2001/212
摘要： Herein disclosed is an optical modulator, having: a substrate (1); and a center and ground electrodes (4a to 4c), in which the substrate has ridge portions (8a to 8c), the center and ground electrodes are respectively formed above the ridge portions, the ridge portions below the center and ground electrodes respectively have top parts (10a, 10b) having a respective first and second end points (18, 19) separated with a distance of “WR”, the substrate has a bottom surface (21b) between the ridge portions having center and midway points (23, 24) positioned with a respective distance of WR/2 and WR/N (3≦N≦25) from the first end point, the ridge portion below the center electrode has a normal line (13), and the center point and the midway point define a straight line (25) crossed with the normal line at an angle larger or equal to 90.1°.
摘要翻译：本文公开了一种光调制器，具有：基板（1）; 以及其中基板具有脊部分（8a至8c）的中心和接地电极（4a至4c），中心接地电极分别形成在脊部上方，中心部分和接地电极下方的脊部分别具有顶部具有以“WR”的距离分开的相应的第一和第二端点（18,19）的部分（10a，10b），所述基板在具有中心点和中间点（23,24）的脊部之间具有底表面）与第一端点分别具有WR / 2和WR / N（3＆nlE; N＆nlE; 25）的距离，中心电极下方的脊部具有法线（13），中心点和中点以大于或等于90.1°的角度定义与法线交叉的直线（25）。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式