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1. 发明申请

US20130033839A1 ELECTRIC DEVICE AND PRODUCTION METHOD THEREFOR 有权
标题翻译：电气设备及其生产方法
公开(公告)号：US20130033839A1
公开(公告)日：2013-02-07
申请号：US13583169
申请日：2011-03-04
申请人： Kenji Kasahara , Masaya Shimizu , Tomoki Kurata
发明人： Kenji Kasahara , Masaya Shimizu , Tomoki Kurata
IPC分类号： H05K7/06 , B32B37/06
CPC分类号： H01L51/5246 , H01L27/3276 , H01L27/3288 , H01L51/448 , H05B33/0896 , Y02E10/549 , Y02P70/521 , Y10T29/49002
摘要： An electric device includes a support substrate 12, an electric circuit 14 provided in a sealing region set on the support substrate 12, an electric wiring provided on the support substrate 12 for electrically connecting an external electrical signal input/output source with the electric circuit 14, a sealing member 16 provided on the support substrate 12 to surround the sealing region, and a sealing substrate 17 bonded to the support substrate 12 with the sealing member 16 interposed therebetween. the electric circuit 14 includes an electronic element 24 having an organic layer, and a width of the sealing member 16 differs between an intersection region in which the electric wiring 15 and the sealing member 16 intersect each other and a non-intersection region excluding the intersection region.
摘要翻译：电气装置包括支撑基板12，设置在设置在支撑基板12上的密封区域中的电路14，设置在支撑基板12上用于将外部电信号输入/输出源与电路14电连接的电线设置在支撑基板12上以围绕密封区域的密封构件16，以及密封基板17，其密封构件16插入在支撑基板12上。电路14包括具有有机层的电子元件24，并且密封构件16的宽度在电布线15和密封构件16相交的交叉区域与不相交的非交叉区域之间不同地区。

2. 发明授权

US08653383B2 Electric device and production method therefor 有权
公开(公告)号：US08653383B2
公开(公告)日：2014-02-18
申请号：US13583169
申请日：2011-03-04
申请人： Kenji Kasahara , Masaya Shimizu , Tomoki Kurata
发明人： Kenji Kasahara , Masaya Shimizu , Tomoki Kurata
IPC分类号： H01L23/28
摘要： An electric device includes a support substrate 12, an electric circuit 14 provided in a sealing region set on the support substrate 12, an electric wiring provided on the support substrate 12 for electrically connecting an external electrical signal input/output source with the electric circuit 14, a sealing member 16 provided on the support substrate 12 to surround the sealing region, and a sealing substrate 17 bonded to the support substrate 12 with the sealing member 16 interposed therebetween. the electric circuit 14 includes an electronic element 24 having an organic layer, and a width of the sealing member 16 differs between an intersection region in which the electric wiring 15 and the sealing member 16 intersect each other and a non-intersection region excluding the intersection region.

3. 发明申请

US20130049184A1 ELECTRIC DEVICE AND PRODUCTION METHOD THEREFOR 审中-公开
标题翻译：电气设备及其生产方法
公开(公告)号：US20130049184A1
公开(公告)日：2013-02-28
申请号：US13583044
申请日：2011-03-04
申请人： Kenji Kasahara , Masaya Shimizu , Tomoki Kurata
发明人： Kenji Kasahara , Masaya Shimizu , Tomoki Kurata
IPC分类号： H01L23/18 , H01L21/56
CPC分类号： H01L51/525 , H01L27/3244 , H01L27/3281 , H01L51/107 , H01L51/5246
摘要： An electronic device includes a support substrate 12, an electric circuit 14 provided in a sealing region set on the support substrate 12, a sealing member 16 provided on the support substrate 12 to surround the sealing region, a sealing substrate 17 bonded to the support substrate 12 with the sealing member 16 interposed therebetween, and a spacer 23 arranged between the support substrate 12 and the sealing substrate 17. The electric circuit 14 includes an electronic element 24 having an organic layer. The sealing member 16 and the spacer 23 are formed using the same material.
摘要翻译：电子装置包括支撑基板12，设置在支撑基板12上的密封区域中的电路14，设置在支撑基板12上以围绕密封区域的密封部件16，与支撑基板接合的密封基板17 12，其间插入有密封构件16，以及布置在支撑基板12和密封基板17之间的间隔件23.电路14包括具有有机层的电子元件24。密封构件16和间隔件23使用相同的材料形成。

4. 发明授权

US08748756B2 Electric device and production method therefor 有权
标题翻译：电气装置及其制造方法
公开(公告)号：US08748756B2
公开(公告)日：2014-06-10
申请号：US13583169
申请日：2011-03-04
申请人： Kenji Kasahara , Masaya Shimizu , Tomoki Kurata
发明人： Kenji Kasahara , Masaya Shimizu , Tomoki Kurata
IPC分类号： H01L23/28
CPC分类号： H01L51/5246 , H01L27/3276 , H01L27/3288 , H01L51/448 , H05B33/0896 , Y02E10/549 , Y02P70/521 , Y10T29/49002
摘要： An electric device includes a support substrate 12, an electric circuit 14 provided in a sealing region set on the support substrate 12, an electric wiring provided on the support substrate 12 for electrically connecting an external electrical signal input/output source with the electric circuit 14, a sealing member 16 provided on the support substrate 12 to surround the sealing region, and a sealing substrate 17 bonded to the support substrate 12 with the sealing member 16 interposed therebetween. the electric circuit 14 includes an electronic element 24 having an organic layer, and a width of the sealing member 16 differs between an intersection region in which the electric wiring 15 and the sealing member 16 intersect each other and a non-intersection region excluding the intersection region.
摘要翻译：电气装置包括支撑基板12，设置在设置在支撑基板12上的密封区域中的电路14，设置在支撑基板12上用于将外部电信号输入/输出源与电路14电连接的电线设置在支撑基板12上以围绕密封区域的密封构件16，以及密封基板17，其密封构件16插入在支撑基板12上。电路14包括具有有机层的电子元件24，并且密封构件16的宽度在电布线15和密封构件16相交的交叉区域与不相交的非交叉区域之间不同地区。

5. 发明申请

US20090008745A1 Nitride Compound Semiconductor and Process for Producing the Same 审中-公开
标题翻译：氮化物复合半导体及其制造方法
公开(公告)号：US20090008745A1
公开(公告)日：2009-01-08
申请号：US11658865
申请日：2005-07-28
申请人： Kenji Kasahara , Makoto Sasaki , Masaya Shimizu
发明人： Kenji Kasahara , Makoto Sasaki , Masaya Shimizu
IPC分类号： H01L29/06 , H01L21/205
CPC分类号： H01L33/007 , H01L21/0237 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L33/02 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2924/181 , H01L2924/00014 , H01L2924/00012
摘要： A process for producing a nitride compound semiconductor represented by a general formula, InxGayAlzN (where x+y+Z=1, 0≦x≦1, 0≦y≦1, and 0≦z≦1), characterized in that a non-doped nitride compound semiconductor (A) represented by a general formula, InaGabAlcN (where a+b+c=1, 0≦a≦1, 0≦b≦1, and 0≦c≦1) of a thickness of 500 to 5000 Å is formed between a p-type contact layer and an n-type contact layer at a temperature within a range between 550 and 850° C.
摘要翻译：一种由通式InxGayAlzN（其中x + y + Z =1,0,0≤i≤1,0<= z <= 1）表示的氮化物化合物半导体的制造方法，其特征在于，由通式InaGabAlcN（其中a + b + c = 1,0 <= a <= 1,0,0 <= b <= 1，0 <= 1）表示的非掺杂氮化物化合物半导体（A）在550和850℃之间的温度下，在p型接触层和n型接触层之间形成厚度为500至5000的厚度= c <= 1。

6. 发明申请

US20120181526A1 ORGANIC EL DEVICE 审中-公开
标题翻译：有机EL设备
公开(公告)号：US20120181526A1
公开(公告)日：2012-07-19
申请号：US13498525
申请日：2010-09-22
申请人： Kenji Kasahara , Masaya Shimizu
发明人： Kenji Kasahara , Masaya Shimizu
IPC分类号： H01L51/52
CPC分类号： H01L51/5092 , H01L27/3246 , H01L51/5231 , H01L51/524
摘要： The present invention provides an organic EL device. The organic EL device is provided with a first substrate, an anode that is located on the first substrate, a light emitting layer that is located on the anode, a partition wall that is formed of an insulating material and partitions the light emitting layer, a cathode that covers the light emitting layer and extends on the partition wall, and a second substrate that is superimposed onto the first substrate via a seal member, and in this structure, the cathode has a multilayer structure including an electron injection layer that injects electrons to the light emitting layer, and at least one electrically conductive layer, and the electron injection layer covers the light emitting layer, and the at least one electrically conductive layer covers the electron injection layer.
摘要翻译：本发明提供一种有机EL器件。有机EL元件设置有第一基板，位于第一基板上的阳极，位于阳极上的发光层，由绝缘材料形成并分隔发光层的分隔壁，阴极，其覆盖发光层并在分隔壁上延伸;以及第二基板，其经由密封构件叠加在第一基板上，并且在该结构中，阴极具有多层结构，该多层结构包括将电子注入的电子注入层所述发光层和至少一个导电层，并且所述电子注入层覆盖所述发光层，并且所述至少一个导电层覆盖所述电子注入层。

7. 发明授权

US08547182B2 Oven controlled crystal oscillator 失效
标题翻译：烤箱控制晶体振荡器
公开(公告)号：US08547182B2
公开(公告)日：2013-10-01
申请号：US13253394
申请日：2011-10-05
申请人： Hiroyuki Murakoshi , Kenji Kasahara , Daisuke Nishiyama
发明人： Hiroyuki Murakoshi , Kenji Kasahara , Daisuke Nishiyama
IPC分类号： H03B5/32 , H03B1/02
CPC分类号： H03L1/028 , H05K1/0271 , H05K3/3442 , H05K2201/09063 , H05K2201/10083 , H05K2201/10636 , Y02P70/611
摘要： Provided is an oven controlled crystal oscillator which can reduce an occurrence of cracks in an applied solder of a large-sized circuit component and improve reliability. It is an oven controlled crystal oscillator in which a slit is formed in a periphery or below a lower surface of a large-sized circuit component provided on the substrate, further, a plurality of small-sized circuit components, which are smaller than the large-sized circuit component, are disposed around the large-sized circuit component, as necessary, and for the plurality of small-sized circuit components, an electronic component, which is electrically connected, and a dummy electronic component, which is not electrically connected, are used.
摘要翻译：本发明提供一种可控制晶体振荡器，其可以减少大尺寸电路元件的焊接中出现的裂缝，提高可靠性。它是一种烤箱控制的晶体振荡器，其中在设置在基板上的大尺寸电路部件的下表面的周边或下方形成有狭缝，此外，多个小型电路部件小于大根据需要设置在大尺寸电路部件周围，对于多个小型电路部件，电连接的电子部件和未电气连接的虚拟电子部件，被使用。

8. 发明授权

US08298839B2 Manufacturing method of a thin film active element 失效
标题翻译：薄膜有源元件的制造方法
公开(公告)号：US08298839B2
公开(公告)日：2012-10-30
申请号：US12681995
申请日：2008-10-09
申请人： Kenji Kasahara
发明人： Kenji Kasahara
IPC分类号： H01L51/56 , H01L51/40
CPC分类号： H01L29/458 , H01L21/0274 , H01L27/3248 , H01L27/3262 , H01L29/41733 , H01L29/66742 , H01L29/78633 , H01L51/0023 , H01L51/0545 , H01L51/102
摘要： There is provided a thin film active element including a light-permeable substrate, a light-shielding source/drain electrode formed on the substrate, a light-permeable source/drain electrode formed on a plane surface to which the light-shielding source/drain electrode belongs, and disposed to have a gap interposed between the light-shielding source/drain electrode and the light-permeable source/drain electrode, a channel layer formed in the gap between the light-shielding source/drain electrode and the light-permeable source/drain electrode, and a gate electrode applying an electric field to the channel layer formed in the gap.
摘要翻译：提供了一种薄膜有源元件，其包括透光性基板，形成在基板上的遮光源极/漏电极，形成在平面上的透光源极/漏电极，光屏蔽源极/漏极并且被设置为在所述遮光源极/漏极和所述透光源极/漏极之间插入间隙，形成在所述遮光源极/漏极之间的间隙中的沟道层和所述透光源极/ 源极/漏极电极和向形成在间隙中的沟道层施加电场的栅电极。

9. 发明申请

US20120200366A1 OSCILLATOR 有权
标题翻译：振荡器
公开(公告)号：US20120200366A1
公开(公告)日：2012-08-09
申请号：US13358818
申请日：2012-01-26
申请人： Daisuke NISHIYAMA , Kenji Kasahara , Hiroyuki Murakoshi
发明人： Daisuke NISHIYAMA , Kenji Kasahara , Hiroyuki Murakoshi
IPC分类号： H03B5/32 , H05K3/34
CPC分类号： H03H9/10 , H03H9/13 , H05K1/111 , H05K3/3442 , H05K2201/09781 , H05K2201/10075 , H05K2201/2036 , Y10T29/42 , Y10T29/49144
摘要： An oscillator that can suppress a solder crack caused by a temperature change by a simple structure at low cost and improve heat cycle resistance performance is provided. The oscillator includes an epoxy resin board and an electronic component mounted on the board. Two-terminal electrode patterns are formed on the board, and connected to terminal electrodes of the electronic component by solder. A projection is formed on each of the electrode patterns at a part connected to a corresponding terminal electrode to create a space between the terminal electrode and the electrode pattern, and the solder forms a fillet in the space. This contributes to enhanced adhesion strength of the solder.
摘要翻译：提供了一种可以通过简单的结构以低成本抑制由温度变化引起的焊料裂纹并提高耐热循环性能的振荡器。振荡器包括环氧树脂板和安装在板上的电子部件。在电路板上形成两端电极图形，并通过焊料与电子部件的端子电极连接。在与相应的端子电极连接的部分上的每个电极图案上形成突起，以在端子电极和电极图案之间形成空间，并且焊料在该空间中形成圆角。这有助于提高焊料的粘附强度。

10. 发明申请

US20120098610A1 OVEN-CONTROLLED CRYSTAL OSCILLATOR AND MANUFACTURING METHOD OF THE SAME 失效
标题翻译：烤炉控制晶体振荡器及其制造方法
公开(公告)号：US20120098610A1
公开(公告)日：2012-04-26
申请号：US13253373
申请日：2011-10-05
申请人： Daisuke NISHIYAMA , Hiroyuki Murakoshi , Kenji Kasahara
发明人： Daisuke NISHIYAMA , Hiroyuki Murakoshi , Kenji Kasahara
IPC分类号： H03B5/32 , B23K1/20 , B23K31/02
CPC分类号： H05K3/3447
摘要： Provided are an oven controlled crystal oscillator in which in a case where a metal lead is soldered to a substrate, even if cracks occur in the solder, its reliability is not reduced, and a production method. That is, an oven controlled crystal oscillator in which pre-tinning solders are formed around openings on a front surface and a rear surface of a substrate in which of a through hole for passing a metal lead therethrough is formed; and in a state where a metal lead including a solder layer (a pre-tinning solder) formed on its surface is inserted into the through hole of the substrate, the metal lead extending from the openings is soldered to the openings on the front surface and the rear surface of the substrate, so as to form a main solder, and a production method of the oven controlled crystal oscillator are provided.
摘要翻译：提供了一种烤箱控制的晶体振荡器，其中在将金属引线焊接到基板的情况下，即使在焊料中发生裂纹，其可靠性也不降低，并且制造方法。也就是说，其中形成有用于使金属引线通过的通孔的基板的前表面和后表面上的开口周围形成预镀锡焊料的烤箱控制晶体振荡器; 并且在其表面上形成有焊锡层（预镀锡）的金属引线插入基板的贯通孔的状态下，从开口部延伸的金属引线焊接到前表面的开口部，基板的后表面，以形成主焊料，并且提供了炉控晶体振荡器的制造方法。

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