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    • 4. 发明授权
    • Magnetic head and method of production thereof
    • 磁头及其制造方法
    • US4354212A
    • 1982-10-12
    • US166808
    • 1980-07-08
    • Norimoto NouchiKenji KanaiNobuyuki KaminakaNoboru Nomura
    • Norimoto NouchiKenji KanaiNobuyuki KaminakaNoboru Nomura
    • G11B5/39G11B5/12G11B5/30
    • G11B5/3932
    • A magnetic head and a production method therefore in which permanent magnet films for applying a DC bias magnetic field Hd h to a magnetoresistive effect element film (MR element film) is arranged on both sides of the thickness dimension of the MR element film through at least a non-magnetic film therebetween. In making the MR element film thicker in order to reduce distortion, the DC bias magnetic field Hd b to be applied to the MR element film is also required to be increased. Unlike the prior art in which the above-mentioned requirement is met by increasing the thickness of the permanent magnet film under the thickness of the MR element film resulting in the problem of breakage of a film member above or under the thickness of the permanent magnet film, the invention further comprises a second permanent magnet film above the thickness of the MR element film without increasing the thickness of the first permanent magnet film. In the case of a magnetic head with a shield members of soft magnetic material holding the MR element film from both sides of the thickness thereof, the MR element film is made thicker to make reproduction possible without any distortion or without substantially increasing the gap. For this purpose, the MR element film is held on the sides above and under the thickness thereof by first and second permanent magnet films which in turn are held by the shield members. To minimize distribution of the MR element film, a comparatively high-temperature process after forming of the MR element film i.e., forming of the second permanent magnet film is effected at optimum temperature, and a magnetic field is applied along the magnetic easy axis of the MR element film.
    • 因此,磁头及其制造方法,其中用于将DC偏置磁场Hd h施加到磁阻效应元件膜(MR元件膜)的永磁体膜至少布置在MR元件膜的厚度尺寸的两侧 它们之间的非磁性膜。 为了使MR元件膜变厚以减少畸变,还需要增加施加到MR元件膜的DC偏置磁场Hd b。 不同于通过在MR元件膜的厚度下增加永磁体膜的厚度来满足上述要求的现有技术,导致膜构件在永磁体膜的厚度以上或以下的厚度的断裂的问题 本发明还包括在MR元件膜的厚度之上的第二永磁体膜,而不增加第一永磁体膜的厚度。 在具有从其厚度的两侧保持MR元件膜的软磁材料的屏蔽构件的磁头的情况下,将MR元件膜制成更厚以使得再现成为可能而没有任何变形或基本上不增加间隙。 为此,MR元件膜通过第一和第二永磁体膜保持在其厚度的上方和下方,该永磁体膜又由屏蔽部件保持。 为了最小化MR元件膜的分布,在形成MR元件膜之后进行比较高温处理,即形成第二永久磁铁膜,在最佳温度下进行,沿着磁性容易轴施加磁场 MR元件膜。