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1. 发明授权

US5043994A Semiconductor laser device 失效
标题翻译：半导体激光器件
公开(公告)号：US5043994A
公开(公告)日：1991-08-27
申请号：US523545
申请日：1990-05-15
申请人： Kenji Ikeda , Kimio Shigihara
发明人： Kenji Ikeda , Kimio Shigihara
IPC分类号： H01S5/00 , H01S5/125
CPC分类号： H01S5/125
摘要： A semiconductor laser device having a relative wide active region and a distributed Bragg reflector facet wherein a relative high reflectance region one third of the active region width is centrally disposed on a surface of the laser through which light is emitted.
摘要翻译：一种具有相对宽的有源区和分布布拉格反射面的半导体激光器件，其中三分之一有源区宽度的相对高反射率区域集中设置在激光的表面上，通过该表面发射光。

2. 发明授权

US4998258A Semiconductor laser device 失效
公开(公告)号：US4998258A
公开(公告)日：1991-03-05
申请号：US398955
申请日：1989-08-28
申请人： Kenji Ikeda , Kimio Shigihara , Yutaka Mihashi
发明人： Kenji Ikeda , Kimio Shigihara , Yutaka Mihashi
IPC分类号： H01S5/00 , H01S5/028 , H01S5/10
CPC分类号： H01S5/0286 , H01S5/1082 , H01S2301/166
摘要： A semiconductor laser device provided with a broad light waveguide through which a higher order transverse oscillation modes can propagate, includes at least one of laser facet having a high reflectance region having a width of about 1/5 to 1/2 of the width of the light waveguide located at a central portion thereof and a low reflectance region having a lower reflectance than the high reflectance region located at both sides of the high reflectance region whereby higher order modes of oscillation can be suppressed.

3. 发明授权

US08111726B2 Semiconductor laser device 有权
标题翻译：半导体激光器件
公开(公告)号：US08111726B2
公开(公告)日：2012-02-07
申请号：US12535779
申请日：2009-08-05
申请人： Kimio Shigihara
发明人： Kimio Shigihara
IPC分类号： H01S5/00
CPC分类号： H01S5/22 , B82Y20/00 , H01S5/2031 , H01S5/305 , H01S5/34313 , H01S5/34326 , H01S5/34333
摘要： A semiconductor laser device includes: an n-type cladding layer, a p-type cladding layer, an active layer located between the n-type cladding layer and the p-type cladding layer, an n-side guiding layer located on the same side of the active layer as the n-type cladding layer, and a p-side guiding layer located on the same side of the active layer as the p-type cladding layer. The n-side guiding layer, the active layer, and the p-side guiding layer are undoped or substantially undoped. The sum of the thicknesses of the n-side guiding layer, the active layer, and the p-side guiding layer is not less than 0.5 times the lasing wavelength of the semiconductor laser device and is not more than 2 μm. The p-side guiding layer is thinner and has a lower refractive index than the n-side guiding layer.
摘要翻译：半导体激光装置包括：n型包层，p型包层，位于n型包层和p型包层之间的有源层，位于同一侧的n侧引导层作为n型包覆层的有源层，以及位于与p型覆层相同的有源层的一侧的p侧引导层。 n侧引导层，有源层和p侧引导层是未掺杂的或基本上未掺杂的。 n侧引导层，有源层和p侧引导层的厚度之和不小于半导体激光器件的激光波长的0.5倍，不大于2μm。 p侧引导层比n侧引导层更薄，折射率低。

4. 发明授权

US07756179B2 Semiconductor laser apparatus 有权
标题翻译：半导体激光装置
公开(公告)号：US07756179B2
公开(公告)日：2010-07-13
申请号：US12031027
申请日：2008-02-14
申请人： Kimio Shigihara
发明人： Kimio Shigihara
IPC分类号： H01S5/00
CPC分类号： H01S5/2031 , H01S5/2063 , H01S5/305 , H01S5/3213 , H01S5/32316 , H01S5/32325 , H01S5/32333
摘要： A semiconductor laser apparatus can improve electric conversion efficiency to a satisfactory extent. The apparatus includes an n-type cladding layer, an n-type cladding layer side guide layer, an active layer, a p-type cladding layer side guide layer, and a p-type cladding layer, wherein electrons and holes are injected into the active layer, transverse to the active layer, through the n-type cladding layer side guide layer and the p-type cladding layer side guide layer. The p-type cladding layer side guide layer is thinner than the n-type cladding layer side guide layer to position the active layer closer to the p-type cladding layer, and, at the same time, the refractive index of the p-type cladding layer side guide layer is higher than the refractive index of the n-type cladding layer side guide layer.
摘要翻译：半导体激光装置可以将电转换效率提高到令人满意的程度。该装置包括n型包覆层，n型包层侧引导层，有源层，p型包层侧引导层和p型包层，其中电子和空穴注入到通过n型包层侧引导层和p型包层侧引导层横向于有源层的有源层。 p型包层侧引导层比n型包层侧引导层薄，使活性层更靠近p型包覆层，同时p型包层侧引导层的折射率包覆层侧引导层比n型包层侧引导层的折射率高。

5. 发明申请

US20100103970A1 SEMICONDUCTOR LASER DEVICE 有权
标题翻译：半导体激光器件
公开(公告)号：US20100103970A1
公开(公告)日：2010-04-29
申请号：US12535779
申请日：2009-08-05
申请人： Kimio Shigihara
发明人： Kimio Shigihara
IPC分类号： H01S5/00
CPC分类号： H01S5/22 , B82Y20/00 , H01S5/2031 , H01S5/305 , H01S5/34313 , H01S5/34326 , H01S5/34333
摘要： A semiconductor laser device includes: an n-type cladding layer, a p-type cladding layer, an active layer located between the n-type cladding layer and the p-type cladding layer, an n-side guiding layer located on the same side of the active layer as the n-type cladding layer, and a p-side guiding layer located on the same side of the active layer as the p-type cladding layer. The n-side guiding layer, the active layer, and the p-side guiding layer are undoped or substantially undoped. The sum of the thicknesses of the n-side guiding layer, the active layer, and the p-side guiding layer is not less than 0.5 times the lasing wavelength of the semiconductor laser device and is not more than 2 μm. The p-side guiding layer is thinner and has a lower refractive index than the n-side guiding layer.
摘要翻译：半导体激光装置包括：n型包层，p型包层，位于n型包层和p型包层之间的有源层，位于同一侧的n侧引导层作为n型包覆层的有源层，以及位于与p型覆层相同的有源层的一侧的p侧引导层。 n侧引导层，有源层和p侧引导层是未掺杂的或基本上未掺杂的。 n侧引导层，有源层和p侧引导层的厚度之和不小于半导体激光器件的激光波长的0.5倍，不大于2μm。 p侧引导层比n侧引导层更薄，折射率低。

6. 发明授权

US07656920B2 Semiconductor laser device 失效
标题翻译：半导体激光器件
公开(公告)号：US07656920B2
公开(公告)日：2010-02-02
申请号：US11284907
申请日：2005-11-23
申请人： Kimio Shigihara , Kazushige Kawasaki , Kenichi Ono
发明人： Kimio Shigihara , Kazushige Kawasaki , Kenichi Ono
IPC分类号： H01S5/00
CPC分类号： H01S5/3434 , B82Y20/00 , H01S5/2004 , H01S5/2063 , H01S5/22 , H01S5/3404 , H01S5/3436 , H01S2301/14
摘要： A semiconductor laser device producing light having a TE-polarized component suitable for practical use (i.e., light having TE-polarized light intensity sufficiently high for practical use). A semiconductor laser device includes a GaAsP active layer, InGaP guide layers, and AlGaInP cladding layers. The GaAsP active layer emits light. The GaAsP active layer is interposed between the InGaP guide layers. The InGaP guide layers and GaAsP active layer are interposed between the AlGaInP cladding layers. Polarization ratio, which is a ratio of light intensity of TM-polarized light to light intensity of TE-polarized light, of the light produced by the semiconductor laser device is less than 2.3.
摘要翻译：一种半导体激光装置，其具有适用于实际使用的TE极化分量（即实际使用的TE偏振光强度足够高的光）的光。半导体激光器件包括GaAsP有源层，InGaP导向层和AlGaInP包覆层。 GaAsP有源层发光。 GaAsP有源层介于InGaP引导层之间。 InGaP引导层和GaAsP有源层插入在AlGaInP包覆层之间。由半导体激光器件产生的光的偏振光比是TM偏振光的光强度与TE偏振光的光强度之比小于2.3。

7. 发明授权

US07259406B2 Semiconductor optical element 失效
标题翻译：半导体光学元件
公开(公告)号：US07259406B2
公开(公告)日：2007-08-21
申请号：US11263997
申请日：2005-11-02
申请人： Yoshihiko Hanamaki , Kenichi Ono , Kimio Shigihara , Kazushige Kawasaki , Kimitaka Shibata , Naoyuki Shimada
发明人： Yoshihiko Hanamaki , Kenichi Ono , Kimio Shigihara , Kazushige Kawasaki , Kimitaka Shibata , Naoyuki Shimada
IPC分类号： H01L29/24 , H01L33/00 , H01L29/06 , H01L29/12 , H01L31/0328
CPC分类号： H01S5/22 , H01S5/323
摘要： A semiconductor optical element having a includes an n-type GaAs buffer layer, an n-type AlGaInP cladding layer, a first InGaAsP (including zero As content)guide layer without added dopant impurities, an InGaAsP (including zero In content) active layer, a second InGaAsP (including zero As content)guide layer without added dopant impurities, a p-type AlGaInP cladding layer, a p-type band discontinuity reduction layer, and a p-type GaAs contact layer sequentially laminated on an n-type GaAs substrate C or Mg is the dopant impurity in the p-type GaAs contact layer, the p-type band discontinuity reduction layer, and the p-type AlGaInP cladding layer.
摘要翻译：具有包括n型GaAs缓冲层，n型AlGaInP包层，没有添加掺杂杂质的第一InGaAsP（包括零As含量）引导层的半导体光学元件，InGaAsP（包括0 In含量）有源层，没有添加掺杂剂杂质的第二InGaAsP（包括零As含量）引导层，顺序地层叠在n型GaAs衬底上的p型AlGaInP包层，p型带不连续性还原层和p型GaAs接触层 C或Mg是p型GaAs接触层中的掺杂剂杂质，p型带不连续性还原层和p型AlGaInP包层。

8. 发明申请

US20050121682A1 Semiconductor laser device 失效
标题翻译：半导体激光器件
公开(公告)号：US20050121682A1
公开(公告)日：2005-06-09
申请号：US10961233
申请日：2004-10-12
申请人： Kimio Shigihara
发明人： Kimio Shigihara
IPC分类号： H01S5/343 , B82Y20/00 , H01L21/00 , H01S5/024 , H01S5/042 , H01S5/20 , H01S5/22 , H01S5/223 , H01S5/30 , H01S5/32 , H01S5/323 , H01L33/00
CPC分类号： H01S5/02461 , H01S5/0224 , H01S5/20 , H01S5/2004 , H01S5/2036 , H01S5/2063 , H01S5/2231 , H01S5/3213 , H01S2301/18
摘要： The present invention provides a semiconductor laser device including a heat sink having one main surface, an n-AlGaAs cladding layer disposed on the main surface of the heat sink, an AlGaAs active layer disposed on the n-AlGaAs cladding layer and a p-AlGaAs cladding layer disposed on the AlGaAs active layer. An effective refractive index and a thermal resistance between a main surface on the heat sink side, of the AlGaAs active layer and a main surface on the heat sink side, of the n-AlGaAs cladding layer are respectively set smaller than those between a main surface on the side opposite to the heat sink, of the AlGaAs active layer and a main surface on the side opposite to the heat sink, of the p-AlGaAs cladding layer.
摘要翻译：本发明提供一种半导体激光装置，其具备：具有一个主表面的散热器，设置在散热片主表面上的n-AlGaAs覆层，设置在n-AlGaAs覆层上的AlGaAs有源层和p-AlGaAs 包层设置在AlGaAs活性层上。 n AlGaAs覆层的AlGaAs活性层和散热体侧的主表面的散热器侧的主面之间的有效折射率和热电阻分别设定为小于主面在AlGaAs活性层的相反一侧和与散热器相反的一侧的主表面上的p-AlGaAs覆层。

9. 发明授权

US06618412B2 Semiconductor laser 有权
标题翻译：半导体激光器
公开(公告)号：US06618412B2
公开(公告)日：2003-09-09
申请号：US09779841
申请日：2001-02-09
申请人： Kimio Shigihara
发明人： Kimio Shigihara
IPC分类号： H01S500
CPC分类号： H01S5/22 , H01S5/2004 , H01S5/2031 , H01S5/3213 , H01S5/3215 , H01S2301/18
摘要： A semiconductor laser includes a semiconductor substrate of a first conductivity type and having a front surface; a first semiconductor layer disposed on the front surface of the semiconductor substrate and having a refractive index that increases with distance from the semiconductor substrate; an active layer disposed on the first semiconductor layer; and a second semiconductor layer disposed on the active layer, having a refractive index that decreases with distance from the active layer, and having a ridge. In this laser, the refractive index distribution between the ridge and the substrate is asymmetrical about the active layer so that the center of the light intensity distribution shifts from the active layer toward the substrate, in the direction perpendicular to the front surface of the substrate. Therefore, propagated light is hardly affected by the refractive index distribution in the width direction of the laser, which is caused by the presence of the ridge, whereby occurrence of a higher mode is suppressed.
摘要翻译：半导体激光器包括具有第一导电类型并具有前表面的半导体衬底; 第一半导体层，其设置在半导体衬底的前表面上，并具有随距离半导体衬底的距离而增加的折射率; 设置在所述第一半导体层上的有源层; 以及设置在所述有源层上的第二半导体层，其折射率随距离所述有源层的距离而减小，并且具有脊。在该激光器中，脊和衬底之间的折射率分布关于有源层是不对称的，使得光强度分布的中心在垂直于衬底的前表面的方向上从有源层向衬底移动。因此，传播的光几乎不受由于脊的存在而导致的激光器的宽度方向上的折射率分布的影响，从而抑制了更高模式的发生。

10. 发明授权

US06285694B1 Semiconductor laser 失效
标题翻译：半导体激光器
公开(公告)号：US06285694B1
公开(公告)日：2001-09-04
申请号：US09073760
申请日：1998-05-07
申请人： Kimio Shigihara
发明人： Kimio Shigihara
IPC分类号： H01S500
CPC分类号： H01S5/22 , H01S5/2004 , H01S5/2031 , H01S5/3213 , H01S5/3215 , H01S2301/18
摘要： A semiconductor laser includes a semiconductor substrate of a first conductivity type and having a front surface; a first semiconductor layer disposed on the front surface of the semiconductor substrate and having a refractive index that increases with distance from the semiconductor substrate; an active layer disposed on the first semiconductor layer; and a second semiconductor layer disposed on the active layer, having a refractive index that decreases with distance from the active layer, and having a ridge. In this laser, the refractive index distribution between the ridge and the substrate is asymmetrical about the active layer so that the center of the intensity of light generated in the semiconductor laser distribution shifts from the active layer toward the substrate, in the direction perpendicular to the front surface of the substrate. Therefore, propagated light is hardly affected by the refractive index distribution in the width direction of the laser, caused by the presence of the ridge, so that higher oscillation is suppressed.
摘要翻译：半导体激光器包括具有第一导电类型并具有前表面的半导体衬底; 第一半导体层，其设置在半导体衬底的前表面上，并具有随距离半导体衬底的距离而增加的折射率; 设置在所述第一半导体层上的有源层; 以及设置在所述有源层上的第二半导体层，其折射率随距离所述有源层的距离而减小，并且具有脊。在该激光器中，脊和衬底之间的折射率分布关于有源层是不对称的，使得在半导体激光器分布中产生的光的强度的中心从有源层向衬底沿垂直于基板的前表面。因此，由于脊的存在，传播的光几乎不受激光器的宽度方向的折射率分布的影响，所以可以抑制更高的振动。

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