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1. 发明授权

US07119009B2 Semiconductor device with dual damascene wiring 有权
公开(公告)号：US07119009B2
公开(公告)日：2006-10-10
申请号：US10898938
申请日：2004-07-27
申请人： Kenichi Watanabe , Daisuke Komada , Fumihiko Shimpuku
发明人： Kenichi Watanabe , Daisuke Komada , Fumihiko Shimpuku
IPC分类号： H01L21/4763 , H01L21/302 , H01L21/461
CPC分类号： H01L21/76808 , H01L21/76804 , H01L21/76807 , H01L21/76813 , H01L21/76829 , H01L2221/1036 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device having: an underlie having a conductive region in the surface layer of the underlie; an insulating etch stopper film covering the surface of the underlie; an interlayer insulating film formed on the insulating etch stopper film; a wiring trench formed in the interlayer insulating film, the wiring trench having a first depth from the surface of the interlayer insulating film; a contact hole extending from the bottom surface of the wiring trench to the surface of the conductive region; and a dual damascene wiring layer embedded in the wiring trench and the contact hole, wherein the interlayer insulating film includes a first kind of an insulating layer surrounding the side wall and bottom surface of the wiring trench and a second kind of an insulating layer having etching characteristics different from the first kind of the insulating layer. The semiconductor device is provided which can protect the underlying conductive region sufficiently and has a dual damascene wiring layer having a high reliability and a small wiring capacitance.

2. 发明授权

US06787907B2 Semiconductor device with dual damascene wiring 有权
标题翻译：具有双镶嵌线的半导体器件
公开(公告)号：US06787907B2
公开(公告)日：2004-09-07
申请号：US09735479
申请日：2000-12-14
申请人： Kenichi Watanabe , Daisuke Komada , Fumihiko Shimpuku
发明人： Kenichi Watanabe , Daisuke Komada , Fumihiko Shimpuku
IPC分类号： H01L2348
CPC分类号： H01L21/76808 , H01L21/76804 , H01L21/76807 , H01L21/76813 , H01L21/76829 , H01L2221/1036 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device having: an underlie having a conductive region in the surface layer of the underlie; an insulating etch stopper film covering the surface of the underlie; an interlayer insulating film formed on the insulating etch stopper film; a wiring trench formed in the interlayer insulating film, the wiring trench having a first depth from the surface of the interlayer insulating film; a contact hole extending from the bottom surface of the wiring trench to the surface of the conductive region; and a dual damascene wiring layer embedded in the wiring trench and the contact hole, wherein the interlayer insulating film includes a first kind of an insulating layer surrounding the side wall and bottom surface of the wiring trench and a second kind of an insulating layer having etching characteristics different from the first kind of the insulating layer. The semiconductor device is provided which can protect the underlying conductive region sufficiently and has a dual damascene wiring layer having a high reliability and a small wiring capacitance.
摘要翻译：一种半导体器件，具有：在基底的表层中具有导电区域的基底; 覆盖基底表面的绝缘蚀刻阻挡膜; 形成在所述绝缘蚀刻停止膜上的层间绝缘膜; 形成在所述层间绝缘膜中的布线沟槽，所述布线沟槽具有从所述层间绝缘膜的表面的第一深度; 从所述布线沟槽的底表面延伸到所述导电区域的表面的接触孔; 以及嵌入在所述布线沟槽和所述接触孔中的双镶嵌布线层，其中所述层间绝缘膜包括围绕所述布线沟槽的侧壁和底面的第一种绝缘层和具有蚀刻的第二种绝缘层特性不同于第一种绝缘层。提供了可以充分保护下面的导电区域并具有高可靠性和小布线电容的双镶嵌布线层的半导体器件。

3. 发明申请

US20050001323A1 Semiconductor device with dual damascene wiring 有权
标题翻译：具有双镶嵌线的半导体器件
公开(公告)号：US20050001323A1
公开(公告)日：2005-01-06
申请号：US10898938
申请日：2004-07-27
申请人： Kenichi Watanabe , Daisuke Komada , Fumihiko Shimpuku
发明人： Kenichi Watanabe , Daisuke Komada , Fumihiko Shimpuku
IPC分类号： H01L23/522 , H01L21/3205 , H01L21/768 , H01L21/4763
CPC分类号： H01L21/76808 , H01L21/76804 , H01L21/76807 , H01L21/76813 , H01L21/76829 , H01L2221/1036 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device having: an underlie having a conductive region in the surface layer of the underlie; an insulating etch stopper film covering the surface of the underlie; an interlayer insulating film formed on the insulating etch stopper film; a wiring trench formed in the interlayer insulating film, the wiring trench having a first depth from the surface of the interlayer insulating film; a contact hole extending from the bottom surface of the wiring trench to the surface of the conductive region; and a dual damascene wiring layer embedded in the wiring trench and the contact hole, wherein the interlayer insulating film includes a first kind of an insulating layer surrounding the side wall and bottom surface of the wiring trench and a second kind of an insulating layer having etching characteristics different from the first kind of the insulating layer. The semiconductor device is provided which can protect the underlying conductive region sufficiently and has a dual damascene wiring layer having a high reliability and a small wiring capacitance.
摘要翻译：一种半导体器件，具有：在基底的表层中具有导电区域的基底; 覆盖基底表面的绝缘蚀刻阻挡膜; 形成在所述绝缘蚀刻停止膜上的层间绝缘膜; 形成在所述层间绝缘膜中的布线沟槽，所述布线沟槽具有从所述层间绝缘膜的表面的第一深度; 从所述布线沟槽的底表面延伸到所述导电区域的表面的接触孔; 以及嵌入在所述布线沟槽和所述接触孔中的双镶嵌布线层，其中所述层间绝缘膜包括围绕所述布线沟槽的侧壁和底面的第一种绝缘层和具有蚀刻的第二种绝缘层特性不同于第一种绝缘层。提供了可以充分保护下面的导电区域并具有高可靠性和小布线电容的双镶嵌布线层的半导体器件。

4. 发明授权

US06451688B1 Method for manufacturing a semiconductor device 失效
公开(公告)号：US06451688B1
公开(公告)日：2002-09-17
申请号：US09996761
申请日：2001-11-30
申请人： Fumihiko Shimpuku
发明人： Fumihiko Shimpuku
IPC分类号： H01L214763
CPC分类号： H01L21/76811 , H01L21/76813 , H01L2221/1021
摘要： A manufacturing process which enables the opening of a downwardly protruding window for a dual damascene structure, etc. both easily and in a well-controlled fashion even in a case where the opening is small. After a depression constituted by a silicon nitride film, etc. has been configured above an interlayer insulating film, a mask is obtained by configuring a window on a portion of it in such a way that said interlayer insulating film will become bared to its bottom. Next, this mask is etched back, followed by the etching of the interlayer insulating film underneath, as a result of the interlayer insulating film becomes etched while the thickness disparity within the mask is being reflected by the corresponding attribute of the interlayer insulating film underneath, and accordingly, a downwardly protruding window (e.g., dual damascene structure, etc.) can be easily formed within said interlayer insulating film. The window which has been formed as a result of such a process is useful not only as a wire layer but also as a capacitor.

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