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    • 6. 发明申请
    • LIGHT DIFFUSER PLATE AND PROCESS FOR PRODUCTION OF LIGHT DIFFUSER PLATE
    • 光扩散板和生产光扩散板的方法
    • US20100284170A1
    • 2010-11-11
    • US12743951
    • 2008-11-25
    • Toshio AwajiYasutaka NakataniKazuyuki SugiharaTakehisa KishimotoAkira Ueda
    • Toshio AwajiYasutaka NakataniKazuyuki SugiharaTakehisa KishimotoAkira Ueda
    • G02F1/13357G02B5/02B32B38/00B32B37/24B32B37/02
    • G02B5/0257G02B5/0215G02B5/0242G02B5/0268G02F1/133606
    • The problem to be solved by the present invention is to provide a light diffuser plate and a process for production thereof, which light diffuser plate can diffuse light selectively in any desired direction even when the number of cold cathode fluorescent lamps as backlights is reduced and the gap between cold cathode fluorescent lamps is increased, so suppressing luminance unevenness and lamp image with good repeatability in stable way and maintaining high luminance. The present invention is also aimed at providing a backlight unit that possesses similar characteristics. The light diffuser plate of the present invention is characterized in comprising a light diffusion layer containing a thermoplastic resin and a crosslinked organic fine particle dispersed in the thermoplastic resin, and a cylindrical lens array on at least one side; wherein a refractive index of the crosslinked organic fine particle is different from a refractive index of the thermoplastic resin; a crosslink density defined by the formula (1) of a polymer constituting the crosslinked organic fine particle is within the predetermined range; an aspect ratio of the crosslinked organic fine particle is more than 1; and a major-axis direction of the crosslinked organic fine particle and a length direction of the cylindrical lenses are the same.
    • 本发明要解决的问题是提供一种光漫射板及其制造方法,即使当作为背光灯的冷阴极荧光灯的数量减少时,该光漫射板可以在任何期望的方向上选择性地漫射光,并且 冷阴极荧光灯之间的间隙增加,从而以稳定的方式抑制亮度不均匀和具有良好重复性的灯图像并保持高亮度。 本发明的目的还在于提供一种具有类似特性的背光单元。 本发明的光扩散板的特征在于,包括含有热塑性树脂的光扩散层和分散在热塑性树脂中的交联有机细颗粒,以及在至少一侧的柱面透镜阵列; 所述交联有机微粒的折射率与所述热塑性树脂的折射率不同; 由构成交联有机细颗粒的聚合物的式(1)定义的交联密度在预定范围内; 交联有机微粒的长径比大于1; 并且交联的有机细颗粒的长轴方向和柱面透镜的长度方向相同。
    • 7. 发明申请
    • Thermoplastic resin sheets provided with functionality by transfer method and their production processes
    • 热塑性树脂片通过转印方法及其生产工艺提供功能
    • US20070104961A1
    • 2007-05-10
    • US11591577
    • 2006-11-02
    • Toshio AwajiNaofumi TsujinoKazuhisa HirataTakehisa KishimotoAkira UedaJunichiro NakagawaMichio Matsuura
    • Toshio AwajiNaofumi TsujinoKazuhisa HirataTakehisa KishimotoAkira UedaJunichiro NakagawaMichio Matsuura
    • B32B27/40
    • B32B27/08B32B27/18B32B27/32B32B37/153B32B2307/306B32B2307/518B32B2309/02B32B2309/105B32B2323/043B32B2323/046B32B2457/202G02F1/133606Y10T428/31551
    • The present invention provides a functional thermoplastic resin sheet including a thin film of at least one layer formed on at least one side of a thermoplastic resin sheet by a transfer method, wherein at least one layer of the thin film has functionality. The functional thermoplastic resin sheet of the first invention has a thin film of at least one layer formed on an uneven surface of a thermoplastic resin sheet having the uneven surface by a transfer method. The production process includes transferring, using a transfer film with a thin film of at least one layer formed on a surface of a base film, the thin film to an uneven surface of a thermoplastic resin sheet having the uneven surface, at which when the glass transition temperature of a thermoplastic resin sheet is denoted as Tg, a surface temperature of the thermoplastic resin sheet is in a range of not lower than (Tg−10° C.) and not higher than (Tg+70° C.), and a base film having a softening point lower than the surface temperature of the thermoplastic resin sheet is used. The transfer film uses a specific film as the base film. The light diffusion plate of the second invention is a light diffusion plate for liquid crystal displays, which has a thin film of at least one layer formed on at least one side of a thermoplastic resin sheet by a transfer method, wherein at least one layer of the thin film contains an antistatic agent. The production process includes extruding a thermoplastic resin sheet while transferring a thin film of at least one layer on at least one side of the thermoplastic resin sheet so that at least one layer of the thin film contains an antistatic agent.
    • 本发明提供了一种功能性热塑性树脂片,其包括通过转印方法形成在热塑性树脂片的至少一侧上的至少一层的薄膜,其中至少一层薄膜具有功能性。 第一发明的功能性热塑性树脂片具有通过转印方法形成有具有不平坦表面的热塑性树脂片的不平坦表面上的至少一层的薄膜。 制造方法包括将具有形成在基膜表面上的至少一层的薄膜的转印膜转印到具有不平坦表面的热塑性树脂片的不平坦表面上,当玻璃 热塑性树脂片的转变温度为Tg,热塑性树脂片的表面温度为不低于(Tg-10℃)且不高于(Tg + 70℃)的范围, 使用软化点低于热塑性树脂片的表面温度的基膜。 转印膜使用特定的膜作为基膜。 第二发明的光漫射板是用于液晶显示器的光漫射板,其具有通过转印方法形成在热塑性树脂片的至少一侧上的至少一层的薄膜,其中至少一层 该薄膜含有抗静电剂。 该制造方法包括:在热塑性树脂片的至少一侧上传送至少一层的薄膜的同时挤出热塑性树脂片,使得至少一层薄膜含有抗静电剂。
    • 8. 发明授权
    • Semiconductor device and method for fabricating the same
    • 半导体装置及其制造方法
    • US07271414B2
    • 2007-09-18
    • US11336970
    • 2006-01-23
    • Nobuyuki TamuraTakehisa KishimotoMizuki Segawa
    • Nobuyuki TamuraTakehisa KishimotoMizuki Segawa
    • H01L31/112H01L27/082
    • H01L21/823857H01L21/823814H01L21/823864Y10S257/90
    • A semiconductor device includes a transistor of a first conductivity type and a transistor of a second conductivity type. The transistor of the first conductivity type includes a first gate portion formed on a first region of a semiconductor substrate, a first sidewall formed on each side face of the first gate portion, a first protecting film formed between the first sidewall and the first gate portion, and an extension diffusion layer of the first conductivity type. The transistor of the second conductivity type includes a second gate portion formed on a second region of the semiconductor substrate, a second sidewall formed on each side face of the second gate portion, a second protecting film having an L-shaped cross-section and formed between the second sidewall and the second gate portion and between the second sidewall and the semiconductor substrate, and an extension diffusion layer of the second conductivity type.
    • 半导体器件包括第一导电类型的晶体管和第二导电类型的晶体管。 第一导电类型的晶体管包括形成在半导体衬底的第一区域上的第一栅极部分,形成在第一栅极部分的每个侧面上的第一侧壁,形成在第一侧壁和第一栅极部分之间的第一保护膜 ,以及第一导电型的延伸扩散层。 第二导电类型的晶体管包括形成在半导体衬底的第二区域上的第二栅极部分,形成在第二栅极部分的每个侧面上的第二侧壁,具有L形横截面的第二保护膜,并形成 在第二侧壁和第二栅极部分之间以及第二侧壁和半导体衬底之间,以及第二导电类型的延伸扩散层。
    • 9. 发明申请
    • Semiconductor device and method for fabricating the same
    • 半导体装置及其制造方法
    • US20060170117A1
    • 2006-08-03
    • US11336970
    • 2006-01-23
    • Nobuyuki TamuraTakehisa KishimotoMizuki Segawa
    • Nobuyuki TamuraTakehisa KishimotoMizuki Segawa
    • H01L27/088
    • H01L21/823857H01L21/823814H01L21/823864Y10S257/90
    • A semiconductor device includes a transistor of a first conductivity type and a transistor of a second conductivity type. The transistor of the first conductivity type includes a first gate portion formed on a first region of a semiconductor substrate, a first sidewall formed on each side face of the first gate portion, a first protecting film formed between the first sidewall and the first gate portion, and an extension diffusion layer of the first conductivity type. The transistor of the second conductivity type includes a second gate portion formed on a second region of the semiconductor substrate, a second sidewall formed on each side face of the second gate portion, a second protecting film having an L-shaped cross-section and formed between the second sidewall and the second gate portion and between the second sidewall and the semiconductor substrate, and an extension diffusion layer of the second conductivity type.
    • 半导体器件包括第一导电类型的晶体管和第二导电类型的晶体管。 第一导电类型的晶体管包括形成在半导体衬底的第一区域上的第一栅极部分,形成在第一栅极部分的每个侧面上的第一侧壁,形成在第一侧壁和第一栅极部分之间的第一保护膜 ,以及第一导电型的延伸扩散层。 第二导电类型的晶体管包括形成在半导体衬底的第二区域上的第二栅极部分,形成在第二栅极部分的每个侧面上的第二侧壁,具有L形横截面的第二保护膜,并形成 在第二侧壁和第二栅极部分之间以及第二侧壁和半导体衬底之间,以及第二导电类型的延伸扩散层。