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1. 发明申请

US20120074508A1 POWER SEMICONDUCTOR DEVICE 审中-公开
标题翻译：功率半导体器件
公开(公告)号：US20120074508A1
公开(公告)日：2012-03-29
申请号：US13309305
申请日：2011-12-01
申请人： Kenichi OHTSUKA , Naruhisa Miura , Masayuki Imaizumi , Tatsuo Oomori
发明人： Kenichi OHTSUKA , Naruhisa Miura , Masayuki Imaizumi , Tatsuo Oomori
IPC分类号： H01L29/78
CPC分类号： H01L29/7802 , H01L29/0878 , H01L29/1095 , H01L29/1608 , H01L29/45 , H01L29/4925 , H01L29/4941 , H01L29/66068 , H01L29/7828
摘要： A power semiconductor device less prone to cause a reaction between a metal material for interconnection and an electrode or the like connected to a semiconductor region during the high-temperature operation thereof and less prone to be strained during the high-temperature operation thereof. The power semiconductor device can be an SiC power device or the like in which a first metal layer containing at least one selected from the group consisting of Pt, Ti, Mo, W and Ta is formed on a source electrode formed on the semiconductor region, such as a source region or the like. A second metal layer containing at least one selected from the group consisting of Mo, W and Cu is formed on the first metal layer. A third metal layer containing at least one selected from the group consisting of Pt, Mo and W is formed on the second metal layer.
摘要翻译：功率半导体器件在其高温操作期间不容易引起用于互连的金属材料与连接到半导体区域的电极等之间的反应，并且在其高温操作期间不易于变形。功率半导体器件可以是在形成在半导体区域上的源电极上形成含有选自Pt，Ti，Mo，W和Ta中的至少一种的第一金属层的SiC功率器件等，例如源区域等。在第一金属层上形成含有选自Mo，W和Cu中的至少一种的第二金属层。在第二金属层上形成含有选自Pt，Mo和W中的至少一种的第三金属层。

2. 发明授权

US08093598B2 Power semiconductor device 有权
标题翻译：功率半导体器件
公开(公告)号：US08093598B2
公开(公告)日：2012-01-10
申请号：US12162998
申请日：2007-03-19
申请人： Kenichi Ohtsuka , Naruhisa Miura , Masayuki Imaizumi , Tatsuo Oomori
发明人： Kenichi Ohtsuka , Naruhisa Miura , Masayuki Imaizumi , Tatsuo Oomori
IPC分类号： H01L31/0312
CPC分类号： H01L29/7802 , H01L29/0878 , H01L29/1095 , H01L29/1608 , H01L29/45 , H01L29/4925 , H01L29/4941 , H01L29/66068 , H01L29/7828
摘要： A power semiconductor device less prone to cause a reaction between a metal material for interconnection and an electrode or the like connected to a semiconductor region during the high-temperature operation thereof and less prone to be strained during the high-temperature operation thereof. The power semiconductor device can be an SiC power device or the like in which a first metal layer containing at least one selected from the group consisting of Pt, Ti, Mo, W and Ta is formed on a source electrode formed on the semiconductor region, such as a source region or the like. A second metal layer containing at least one selected from the group consisting of Mo, W and Cu is formed on the first metal layer. A third metal layer containing at least one selected from the group consisting of Pt, Mo and W is formed on the second metal layer.
摘要翻译：功率半导体器件在其高温操作期间不容易引起用于互连的金属材料与连接到半导体区域的电极等之间的反应，并且在其高温操作期间不易于变形。功率半导体器件可以是在形成在半导体区域上的源电极上形成含有选自Pt，Ti，Mo，W和Ta中的至少一种的第一金属层的SiC功率器件等，例如源区域等。在第一金属层上形成含有选自Mo，W和Cu中的至少一种的第二金属层。在第二金属层上形成含有选自Pt，Mo和W中的至少一种的第三金属层。

3. 发明申请

US20090020766A1 POWER SEMICONDUCTOR DEVICE 有权
标题翻译：功率半导体器件
公开(公告)号：US20090020766A1
公开(公告)日：2009-01-22
申请号：US12162998
申请日：2007-03-19
申请人： Kenichi Ohtsuka , Naruhisa Miura , Masayuki Imaizumi , Tatsuo Oomori
发明人： Kenichi Ohtsuka , Naruhisa Miura , Masayuki Imaizumi , Tatsuo Oomori
IPC分类号： H01L29/24
CPC分类号： H01L29/7802 , H01L29/0878 , H01L29/1095 , H01L29/1608 , H01L29/45 , H01L29/4925 , H01L29/4941 , H01L29/66068 , H01L29/7828
摘要： A power semiconductor device less prone to cause a reaction between a metal material for interconnection and an electrode or the like connected to a semiconductor region during the high-temperature operation thereof and less prone to be strained during the high-temperature operation thereof. The power semiconductor device can be an SiC power device or the like in which a first metal layer containing at least one selected from the group consisting of Pt, Ti, Mo, W and Ta is formed on a source electrode formed on the semiconductor region, such as a source region or the like. A second metal layer containing at least one selected from the group consisting of Mo, W and Cu is formed on the first metal layer. A third metal layer containing at least one selected from the group consisting of Pt, Mo and W is formed on the second metal layer.
摘要翻译：功率半导体器件在其高温操作期间不容易引起用于互连的金属材料与连接到半导体区域的电极等之间的反应，并且在其高温操作期间不易于变形。功率半导体器件可以是在形成在半导体区域上的源电极上形成含有选自Pt，Ti，Mo，W和Ta中的至少一种的第一金属层的SiC功率器件等，例如源区域等。在第一金属层上形成含有选自Mo，W和Cu中的至少一种的第二金属层。在第二金属层上形成含有选自Pt，Mo和W中的至少一种的第三金属层。

4. 发明授权

US4893019A Ion current generator system for thin film formation, ion implantation, etching and sputtering 失效
标题翻译：用于薄膜形成，离子注入，蚀刻和溅射的离子电流发生器系统
公开(公告)号：US4893019A
公开(公告)日：1990-01-09
申请号：US186236
申请日：1988-04-26
申请人： Tatsuo Oomori , Kouichi Ono , Shigeto Fujita
发明人： Tatsuo Oomori , Kouichi Ono , Shigeto Fujita
IPC分类号： H01J27/24 , H01J37/08
CPC分类号： H01J27/24 , H01J37/08
摘要： The ion current generator is employed for thin film formation, ion implantation, etching, sputtering or the like. A vaporizer supplies material atoms to a predetermined region, and then, the material atoms are excited to a Rydberg state by lasers supplied from laser oscillators. The material atoms thus excited are ionized by an electric field applied from electric field application means, to be lead to a predetermined direction. Accordingly, an ion current can be generated at a high efficiency and low cost.
摘要翻译：离子发生器用于薄膜形成，离子注入，蚀刻，溅射等。蒸发器将材料原子供应到预定区域，然后通过激光振荡器提供的激光将材料原子激发到雷德堡状态。这样被激发的材料原子被从电场施加装置施加的电场电离，以导致预定的方向。因此，可以以高效率和低成本产生离子电流。

5. 发明授权

US5108535A Dry etching apparatus 失效
标题翻译：干蚀设备
公开(公告)号：US5108535A
公开(公告)日：1992-04-28
申请号：US538931
申请日：1990-06-15
申请人： Kouichi Ono , Tatsuo Oomori
发明人： Kouichi Ono , Tatsuo Oomori
IPC分类号： H05H1/46
CPC分类号： H05H1/46
摘要： A dry etching apparatus includes a discharge room in which a gas plasma is created by a discharge, an ejection nozzle for ejecting the plasma gas, a first vacuum room into which the plasma gas is introduced through the ejecting nozzle by supersonic expansion of the plasma gas, and a second vacuum room including a skimmer for extracting a supersonic molecular flow, the supersonic molecular flow of the plasma gas taken into the second vacuum room being blown against the material to be etched.
摘要翻译：干蚀刻装置包括：排出室，其中通过放电产生气体等离子体;喷射喷嘴，用于喷射等离子体气体;第一真空室，等离子体气体通过喷射喷嘴通过等离子体气体的超音速膨胀引入到该第一真空室中以及包括用于提取超音速分子流的撇渣器的第二真空室，被送入第二真空室的等离子体气体的超音速分子流被吹送到待蚀刻的材料上。

6. 发明授权

US4710937A Laser system 失效
标题翻译：激光系统
公开(公告)号：US4710937A
公开(公告)日：1987-12-01
申请号：US851219
申请日：1986-04-14
申请人： Tatsuo Oomori , Kouichi Ono , Shigeto Fujita
发明人： Tatsuo Oomori , Kouichi Ono , Shigeto Fujita
IPC分类号： H01S3/02 , H01S3/082 , H01S3/20
CPC分类号： H01S3/0823 , H01S3/022
摘要： A dye laser system for emitting laser beams of various wavelengths, which includes a plurality of dye vessels apart from each other and a mirror for oscillating the laser beams and for reflecting the beams to a beam splitter. Two wavelength selectors are provided for directing a specific wavelength portion of the beams to the beam splitter and for directing a specific wavelength portion of the beams to the mirror.
摘要翻译：一种用于发射各种波长的激光束的染料激光系统，其包括彼此分开的多个染料容器和用于振荡激光束并用于将光束反射到分束器的反射镜。两个波长选择器被提供用于将波束的特定波长部分引导到分束器并用于将波束的特定波长部分引导到反射镜。

7. 发明授权

US06847511B2 Circuit protecting against electrostatic discharge 失效
标题翻译：电路防静电放电
公开(公告)号：US06847511B2
公开(公告)日：2005-01-25
申请号：US10066608
申请日：2002-02-06
申请人： Takahiro Ohnakado , Tatsuo Oomori
发明人： Takahiro Ohnakado , Tatsuo Oomori
IPC分类号： H01L27/04 , H01L21/822 , H01L21/8238 , H01L27/02 , H01L27/06 , H01L27/092 , H02H9/00
CPC分类号： H01L27/0266 , H01L27/0251
摘要： A quarter wavelength transmission line is provided between a signal transmission line for transmitting a high frequency signal and a ground node. The quarter wavelength transmission line has a length equal to a quarter of an effective wavelength of an operation frequency of a semiconductor device. A surge absorbing element is connected between the quarter wavelength transmission line and an internal circuit. The signal transmission line is coupled to the internal circuit through a capacitor. A clamp circuit is provided between a power supply line and a ground line. The clamp circuit clamps the voltage difference between the power supply line and the ground line to a prescribed voltage level or less. A high frequency semiconductor device is thus implemented which is capable of preventing breakdown of an internal circuit element due to an electrostatic discharge phenomenon (ESD) without degrading high frequency characteristics.
摘要翻译：在用于发送高频信号的信号传输线和接地节点之间提供四分之一波长的传输线。四分之一波长传输线具有等于半导体器件的工作频率的有效波长的四分之一的长度。浪涌吸收元件连接在四分之一波长传输线和内部电路之间。信号传输线通过电容耦合到内部电路。在电源线和接地线之间设置钳位电路。钳位电路将电源线和接地线之间的电压差钳位到规定的电压电平以下。因此，可以实现能够防止由于静电放电现象（ESD）而导致的内部电路元件的破坏而不降低高频特性的高频半导体器件。

8. 发明授权

US5115135A Ion source 失效
标题翻译：离子源
公开(公告)号：US5115135A
公开(公告)日：1992-05-19
申请号：US487460
申请日：1990-03-02
申请人： Tatsuo Oomori , Kouichi Ono
发明人： Tatsuo Oomori , Kouichi Ono
IPC分类号： H01J27/20 , H01J27/24 , H01J37/08 , H01L21/203 , H01L21/205 , H01L21/302 , H01L21/3065 , H01L21/31
CPC分类号： H01J37/08 , H01J27/24
摘要： An ion source includes a partial flow generator for generating particle flow including atoms or molecules, a laser beam generator for generating a laser beam with one or a plurality of wavelengths which irradiates the whole or one part of the atoms or molecules in the particle flow near an exhaust nozzle of the particle flow generator, a pair of electrodes for applyinig an electric field over one part or the whole of the particle flow in the downstream region of the region irradiated with the laser beam, and a power supply for applying a voltage to generate the electric field between the electrodes to the electrodes. Wherein the laser has one or a plurality of excitation wavelengths for exciting specific atoms or molecules in the particle flow from a ground state to a highly excited state, that is, the Rydberg state in which the principal quantum number of a valence electron is large, a voltage for generating an electric field more than the minimum electric field for ionizing the atoms or molecules in the Rydberg state is applied between the electrodes after irradiation of the laser beam, and one or a plurality of outlet holes through which an ion beam is drawn out are provided at one part of the electrodes.
摘要翻译：离子源包括用于产生包括原子或分子的粒子流的部分流发生器，用于产生具有一个或多个波长的激光束的激光束发生器，该激光束照射粒子流中的全部或一部分原子或分子粒子流发生器的排气喷嘴，用于在被激光束照射的区域的下游区域中的一个或多个颗粒流上施加电场的一对电极，以及用于将电压施加到在电极之间产生电极到电极之间的电场。其中激光器具有一个或多个激发波长，用于激发从基态到高激发态的粒子流中的特定原子或分子，即价电子的主量子数大的雷德堡状态，在激光束照射之后，在电极之间施加大于用于使Rydberg状态的原子或分子电离的最小电场的电场的电压，以及一个或多个出射孔，通过该出射孔吸引离子束在电极的一部分设置出电极。

9. 发明授权

US4716295A Ion beam generator 失效
标题翻译：离子束发生器
公开(公告)号：US4716295A
公开(公告)日：1987-12-29
申请号：US782725
申请日：1985-10-01
申请人： Yoshihiro Ueda , Kouichi Ono , Tatsuo Oomori , Shigeto Fujita
发明人： Yoshihiro Ueda , Kouichi Ono , Tatsuo Oomori , Shigeto Fujita
IPC分类号： H01J27/24 , H01J37/00
CPC分类号： H01J27/24
摘要： An ion beam generator having an ion generating section for generating ions where the material to be ionized is introduced and a light source for introducing a light into the ion generating sections. This light has a wavelength such that it excites the material to be ionized to the intermediate state from the ground state of the material by a resonance excitation. The specific material to be taken out as an ion beam is selectively ionized through the intermediate state.
摘要翻译：一种具有用于产生离子的离子产生部分的离子束发生器，其中引入待离子化材料的光源和用于将光引入离子产生部分的光源。该光具有波长，使得其通过共振激发从材料的基态激发要离子化到中间状态的材料。作为离子束取出的具体材料通过中间状态选择性地离子化。

10. 发明授权

US4692627A Ion beam generator 失效
标题翻译：离子束发生器
公开(公告)号：US4692627A
公开(公告)日：1987-09-08
申请号：US782541
申请日：1985-10-01
申请人： Yoshihiro Ueda , Kouichi Ono , Tatsuo Oomori , Shigeto Fujita
发明人： Yoshihiro Ueda , Kouichi Ono , Tatsuo Oomori , Shigeto Fujita
IPC分类号： H01J27/24 , H01J37/08
CPC分类号： H01J27/24
摘要： An ion beam generator includes: an ion generating section for generating ions and where the material to be ionized is introduced; a gas discharge device for exciting the material to be ionized to a low excited state; a light source for introducing a light into the ion generating section, which light has a wavelength such that it excites the material to be ionized to an intermediate state from the low excited state of the material by a resonance excitation; and the specific material to be taken out as an ion beam being selectively ionized through the intermediate state.
摘要翻译：一种离子束发生器包括：用于产生离子的离子产生部分，其中被引入的待离子化材料; 用于将待离子化的材料激发到低激发态的气体放电装置; 用于将光引入离子产生部分的光源，该光具有波长，使得其通过共振激发从材料的低激发态激发待离子化的材料到中间状态; 并且作为离子束被取出的具体材料通过中间状态选择性离子化。

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