会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 3. 发明授权
    • Light emitting diode with fluorescent material
    • 带荧光材料的发光二极管
    • US07728508B2
    • 2010-06-01
    • US11146354
    • 2005-06-07
    • Kenichi KondoShuichi TayaYasuyuki Miyake
    • Kenichi KondoShuichi TayaYasuyuki Miyake
    • H01J1/62H01J63/04
    • C09K11/7774H01L24/45H01L33/502H01L2224/45144H01L2224/48227H01L2224/48465H01L2224/49107H01L2224/73265H01L2924/12041H01L2924/181H01L2924/00014H01L2924/00H01L2924/00012
    • A light-emitting device can be configured to have little variation in light emission characteristics even at increased temperatures. A light-emitting device can include a light-emitting section for emitting light with a predetermined wavelength, and a fluorescent material for absorbing a part of light emitted from the light-emitting section and emitting light with a longer wavelength. The light-emitting device can mix the light with the predetermined wavelength from the light-emitting section and the light with the longer wavelength from the fluorescent material, and thereby emit a mixed light. The fluorescent material can include single crystal grains in which primary grains have a diameter of 1 μm or less. Crystal defects, such as a grain boundary, do not often and sometimes never occur in the single crystal grain having a diameter of 1 μm or less. Thus, it is possible to restrain a phenomenon in which a crystal defect non-radially emits absorbed energy (as heat) which then reduces light emission efficiency.
    • 发光装置可以配置为即使在升高的温度下也具有很小的发光特性变化。 发光装置可以包括用于发射具有预定波长的光的发光部分和用于吸收从发光部分发射的光的一部分并发射较长波长的光的荧光材料。 发光装置可以将来自发光部的预定波长的光与来自荧光材料的波长较长的光混合,从而发出混合光。 荧光材料可以包括其中初级晶粒具有1μm或更小的直径的单晶晶粒。 在直径为1μm以下的单晶粒中,晶界等晶体缺陷常常并不经常发生,有时不会发生。 因此,可以抑制晶体缺陷非径向地发射吸收能量(作为热量)的现象,从而降低发光效率。
    • 8. 发明授权
    • Solid-state image sensing device and operation method thereof
    • 固态摄像装置及其操作方法
    • US06476941B1
    • 2002-11-05
    • US09052332
    • 1998-03-31
    • Kenichi KondoToshikazu Yanai
    • Kenichi KondoToshikazu Yanai
    • H04N146
    • H04N5/3728H04N5/3454
    • Charges are transferred from vertical charge transfer devices of a solid-state image sensing device to horizontal charge transfer device via buffer storage cells. Charges obtained from a unessential area out of the transferred charges are discarded by operating the horizontal charge transfer device, and charges obtained from a specific area out of the transferred charges are normally read out by operating the horizontal charge transfer device. When there is a remaining charge in the horizontal charge transfer device after reading charges from the specific area, charges are transferred from the vertical charge transfer devices to the horizontal charge transfer device so that the remaining charge is added only to a charge obtained from the unessential area. Further, charges are transferred in the vertical charge transfer devices in the vertical direction while discarding unessential charges.
    • 收费从固态图像感测装置的垂直电荷转移装置通过缓冲存储单元转移到水平电荷转移装置。 通过操作水平电荷转移装置,从转移费用中的非必要区域获得的费用被丢弃,并且通常通过操作水平电荷转移装置读出从转移电荷中的特定区域获得的电荷。 当从特定区域读取电荷之后在水平电荷转移装置中存在剩余电荷时,电荷从垂直电荷转移装置转移到水平电荷转移装置,使得剩余电荷仅被添加到从不必要的电荷获得的电荷 区。 此外,在垂直方向上的电荷转移到垂直方向,同时丢弃不必要的电荷。
    • 9. 发明授权
    • Fabrication and method of producing silicon films
    • 硅膜的制造和制造方法
    • US5952061A
    • 1999-09-14
    • US996197
    • 1997-12-22
    • Makoto YoshidaTakahiro SaidaSatoshi OkadaMasahiro AkamatsuKenichi Kondo
    • Makoto YoshidaTakahiro SaidaSatoshi OkadaMasahiro AkamatsuKenichi Kondo
    • C23C14/14C23C14/32C23C16/24
    • C23C14/325C23C14/14
    • The present invention is an apparatus and method for the fabrication of high quality silicon films by deposition of a silicon vapor onto a substrate. The silicon film fabrication apparatus includes a chamber, a crucible having an anode for melting a silicon metal, an anode for generating a DC arc discharge plasma, a substrate holder facing the crucible, and a heater for heating a substrate arranged in the substrate holder. The apparatus also includes a variable DC power supply, a cathode element including an electrode plate for generating the DC arc discharge plasma, a gas intake pipe penetrating through the electrode plate into the chamber, and an exhaust pipe having a valve facing the gas intake pipe. The silicon film is fabricated by disposing a substrate in a chamber, introducing hydrogen gas into the chamber, generating the DC arc discharge plasma, evaporating the silicon metal in the chamber, and depositing the silicon vapor on the substrate after the vapor passes through the DC arc discharge plasma.
    • 本发明是通过将硅蒸气沉积到基板上来制造高质量硅膜的装置和方法。 硅膜制造装置包括:室,具有用于熔融硅金属的阳极的坩埚,用于产生直流电弧放电等离子体的阳极,面对坩埚的基板保持架,以及用于加热布置在基板支架中的基板的加热器。 该装置还包括可变直流电源,包括用于产生直流电弧放电等离子体的电极板的阴极元件,穿过电极板进入腔室的进气管,以及具有面对气体吸入管的阀的排气管 。 硅膜通过在室内设置基板,将氢气引入室内,产生直流电弧放电等离子体,蒸发室中的硅金属,并在蒸汽通过DC后将硅蒸气沉积在基板上, 电弧放电等离子体。