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1. 发明授权

US09154033B2 Current control semiconductor device and control device using the same 有权
标题翻译：电流控制半导体器件和使用其的控制器件
公开(公告)号：US09154033B2
公开(公告)日：2015-10-06
申请号：US14130688
申请日：2012-07-03
申请人： Kenichi Hoshino , Teppei Hirotsu , Ryosuke Ishida
发明人： Kenichi Hoshino , Teppei Hirotsu , Ryosuke Ishida
IPC分类号： H03M1/14 , H02M3/157 , H03M1/06 , H03M1/12 , F02D41/20
CPC分类号： H02M3/157 , F02D2041/2024 , F02D2041/2058 , H03M1/0609 , H03M1/12
摘要： A current control semiconductor device that can detect a current with high precision within an IC of one chip by dynamically correcting a variation in a gain a and an offset b, and a control device using the semiconductor device are provided. A transistor 4, a current-voltage converter circuit 22, and an AD converter 23 are disposed on an identical semiconductor chip. Reference current generator circuits 6 and 6′ superimpose a current pulse Ic on a current of a load 2, and vary a voltage digital value output by the AD converter. A gain/offset correction unit 8 subjects a variation in a voltage digital value caused by the reference current generator circuits 6, 6′ to signal processing, and dynamically acquires gains a, a′ and offsets b, b′ in a linear relational expression of the voltage digital value output by the AD converter 23 and a current digital value of the load. A current digital value calculation unit 12 corrects a voltage value output by the AD converter with the use of the gain and the offset acquired by the gain/offset correction unit 8.
摘要翻译：提供了一种电流控制半导体器件，其通过动态地校正增益a和偏移b的变化，以及使用该半导体器件的控制装置，能够以一个芯片的IC内的高精度检测电流。晶体管4，电流 - 电压转换器电路22和AD转换器23设置在相同的半导体芯片上。参考电流发生器电路6和6'将电流脉冲Ic叠加在负载2的电流上，并且改变由AD转换器输出的电压数字值。增益/偏移校正单元8使由参考电流发生器电路6,6'引起的电压数字值的变化进行信号处理，并且以线性关系表达式动态地获取增益a，a'和偏移量b，b' 由AD转换器23输出的电压数字值和负载的当前数字值。当前数字值计算单元12利用由增益/偏移校正单元8获取的增益和偏移来校正由AD转换器输出的电压值。

2. 发明申请

US20140145696A1 Current Control Semiconductor Device and Control Device Using the Same 有权
标题翻译：电流控制半导体器件及其使用的控制装置
公开(公告)号：US20140145696A1
公开(公告)日：2014-05-29
申请号：US14130688
申请日：2012-07-03
申请人： Kenichi Hoshino , Teppei Hirotsu , Ryosuke Ishida
发明人： Kenichi Hoshino , Teppei Hirotsu , Ryosuke Ishida
IPC分类号： H02M3/157
CPC分类号： H02M3/157 , F02D2041/2024 , F02D2041/2058 , H03M1/0609 , H03M1/12
摘要： A current control semiconductor device that can detect a current with high precision within an IC of one chip by dynamically correcting a variation in a gain a and an offset b, and a control device using the semiconductor device are provided. A transistor 4, a current-voltage converter circuit 22, and an AD converter 23 are disposed on an identical semiconductor chip. Reference current generator circuits 6 and 6′ superimpose a current pulse Ic on a current of a load 2, and vary a voltage digital value output by the AD converter. A gain/offset correction unit 8 subjects a variation in a voltage digital value caused by the reference current generator circuits 6, 6′ to signal processing, and dynamically acquires gains a, a′ and offsets b, b′ in a linear relational expression of the voltage digital value output by the AD converter 23 and a current digital value of the load. A current digital value calculation unit 12 corrects a voltage value output by the AD converter with the use of the gain and the offset acquired by the gain/offset correction unit 8.
摘要翻译：提供了一种电流控制半导体器件，其通过动态地校正增益a和偏移b的变化，以及使用该半导体器件的控制装置，能够以一个芯片的IC内的高精度检测电流。晶体管4，电流 - 电压转换器电路22和AD转换器23设置在相同的半导体芯片上。参考电流发生器电路6和6'将电流脉冲Ic叠加在负载2的电流上，并且改变由AD转换器输出的电压数字值。增益/偏移校正单元8使由参考电流发生器电路6,6'引起的电压数字值的变化进行信号处理，并且以线性关系表达式动态地获取增益a，a'和偏移量b，b' 由AD转换器23输出的电压数字值和负载的当前数字值。当前数字值计算单元12利用由增益/偏移校正单元8获取的增益和偏移来校正由AD转换器输出的电压值。

3. 发明授权

US09146567B2 Current control device 有权
标题翻译：电流控制装置
公开(公告)号：US09146567B2
公开(公告)日：2015-09-29
申请号：US13985627
申请日：2012-02-21
申请人： Teppei Hirotsu , Nobuyasu Kanekawa , Ryosuke Ishida
发明人： Teppei Hirotsu , Nobuyasu Kanekawa , Ryosuke Ishida
IPC分类号： H02M3/157 , G05F1/10 , H02P29/02 , H02M7/538 , H01F7/18 , H02M1/32
CPC分类号： G05F1/10 , H01F2007/1888 , H02M1/32 , H02M7/53803 , H02P29/0241 , H02P29/0243 , H02P29/032
摘要： A current control device capable of performing widely applicable failure detection without a motor rotation speed sensor is provided. A current control semiconductor element includes, on a same semiconductor chip, a transistor that drives load, a current detection circuit that detects current of the load, a compensator that calculates an on-duty of the transistor from a current command value and a current value output from the current detection circuit, and a PWM timer that generates a pulse turning on the transistor on the basis of the on-duty. A microcontroller sends the current command value to the current control semiconductor element, receives the current value output from the current detection circuit and the on-duty output from the compensator from the current control semiconductor element, and detects failure of the current control semiconductor element on the basis of the received current value and on-duty.
摘要翻译：提供一种能够在没有马达转速传感器的情况下执行广泛应用的故障检测的电流控制装置。电流控制半导体元件在相同的半导体芯片上包括驱动负载的晶体管，检测负载电流的电流检测电路，从电流指令值和电流值计算晶体管的占空比的补偿器来自电流检测电路的输出;以及PWM定时器，其基于占空比产生导通晶体管的脉冲。微控制器将电流指令值发送到电流控制半导体元件，从电流控制半导体元件接收从电流检测电路输出的电流值和来自补偿器的占空比输出，并检测电流控制半导体元件的故障所接受的现值和值班的依据。

4. 发明申请

US20130320948A1 Current Control Device 有权
标题翻译：电流控制装置
公开(公告)号：US20130320948A1
公开(公告)日：2013-12-05
申请号：US13985627
申请日：2012-02-21
申请人： Teppei Hirotsu , Nobuyasu Kanekawa , Ryosuke Ishida
发明人： Teppei Hirotsu , Nobuyasu Kanekawa , Ryosuke Ishida
IPC分类号： G05F1/10
CPC分类号： G05F1/10 , H01F2007/1888 , H02M1/32 , H02M7/53803 , H02P29/0241 , H02P29/0243 , H02P29/032
摘要： A current control device capable of performing widely applicable failure detection without a motor rotation speed sensor is provided. A current control semiconductor element includes, on a same semiconductor chip, a transistor that drives load, a current detection circuit that detects current of the load, a compensator that calculates an on-duty of the transistor from a current command value and a current value output from the current detection circuit, and a PWM timer that generates a pulse turning on the transistor on the basis of the on-duty. A microcontroller sends the current command value to the current control semiconductor element, receives the current value output from the current detection circuit and the on-duty output from the compensator from the current control semiconductor element, and detects failure of the current control semiconductor element on the basis of the received current value and on-duty.
摘要翻译：提供一种能够在没有马达转速传感器的情况下执行广泛应用的故障检测的电流控制装置。电流控制半导体元件在相同的半导体芯片上包括驱动负载的晶体管，检测负载电流的电流检测电路，从电流指令值和电流值计算晶体管的占空比的补偿器来自电流检测电路的输出;以及PWM定时器，其基于占空比产生导通晶体管的脉冲。微控制器将电流指令值发送到电流控制半导体元件，从电流控制半导体元件接收从电流检测电路输出的电流值和来自补偿器的占空比输出，并检测电流控制半导体元件的故障所接受的现值和值班的依据。

5. 发明申请

US20130057245A1 Current Regulator 审中-公开
标题翻译：电流调节器
公开(公告)号：US20130057245A1
公开(公告)日：2013-03-07
申请号：US13557793
申请日：2012-07-25
申请人： Teppei HIROTSU , Nobuyasu Kanekawa , Ryosuke Ishida , Tsutomu Yamada , Chihiro Sato
发明人： Teppei HIROTSU , Nobuyasu Kanekawa , Ryosuke Ishida , Tsutomu Yamada , Chihiro Sato
IPC分类号： G05F3/02
CPC分类号： H02M7/53803 , H02M3/1588 , H02M7/5395 , H02M2001/0009 , Y02B70/1466
摘要： A current regulator has a current regulating semiconductor device and a microcontroller which outputs a PWM pulse for driving a load to the current regulating semiconductor device and receives outputs of a high-side current detection circuit and a low-side current detection circuit from the current regulating semiconductor device. An output mixer of the current regulating semiconductor device switches, in synchronization with the PWM pulse, between the output of the high-side current detection circuit and the output of the low-side current detection circuit on one signal line to output the output to the microcontroller.
摘要翻译：电流调节器具有电流调节半导体器件和微控制器，其输出用于将负载驱动到电流调节半导体器件的PWM脉冲，并且从电流调节器接收高侧电流检测电路和低侧电流检测电路的输出半导体器件。电流调节半导体装置的输出混频器与PWM脉冲同步地在高边电流检测电路的输出和低端电流检测电路的输出之间切换，以将输出输出到微控制器

6. 发明授权

US08953315B2 Axial fan and electronic device including the same 有权
标题翻译：轴流风扇和电子设备包括相同
公开(公告)号：US08953315B2
公开(公告)日：2015-02-10
申请号：US13185523
申请日：2011-07-19
申请人： Shinji Takemoto , Yoshiaki Oguma , Ryosuke Ishida
发明人： Shinji Takemoto , Yoshiaki Oguma , Ryosuke Ishida
IPC分类号： H05K7/20 , F04D29/58
CPC分类号： F04D29/582 , F04D25/0613 , F04D29/526
摘要： In an axial fan, a housing includes a side wall arranged to surround an outer circumference of an impeller, and a substantially square or substantially rectangular flange arranged to project radially outward from an outer circumferential surface of the side wall. The side wall preferably includes three slit groups each including a plurality of slits arranged in a circumferential direction and arranged to extend through the side wall from an inner circumferential surface to the outer circumferential surface thereof. Two of the slit groups are defined in portions of the side wall which correspond to two adjacent corner portions in an upper half portion of the flange, while the remaining slit group is defined in a portion of the side wall which corresponds to a lower half portion of the flange. The upper and lower half portions are divided at a line parallel or substantially parallel to two opposing sides of the flange and passing through a central axis.
摘要翻译：在轴流式风扇中，壳体包括设置成围绕叶轮的外圆周的侧壁，以及布置成从侧壁的外圆周表面径向向外突出的大致正方形或大致矩形的凸缘。侧壁优选包括三个狭缝组，每个狭缝组包括沿圆周方向布置的多个狭缝，并且布置成从内壁表面延伸穿过侧壁到外圆周表面。两个狭缝组被限定在侧壁的对应于凸缘的上半部分中的两个相邻拐角部分的部分中，而剩余的狭缝组限定在侧壁的对应于下半部分的部分中的法兰。上半部分和下半部分以平行或基本上平行于凸缘的两个相对侧并且穿过中心轴线的线分开。

7. 发明授权

US5124241A Silver halide color photographic material 失效
标题翻译：卤化银彩色照相材料
公开(公告)号：US5124241A
公开(公告)日：1992-06-23
申请号：US599850
申请日：1990-10-19
申请人： Akira Ogawa , Nobuo Sakai , Ryosuke Ishida
发明人： Akira Ogawa , Nobuo Sakai , Ryosuke Ishida
IPC分类号： G03C7/32 , G03C7/34
CPC分类号： G03C7/342 , G03C7/3225
摘要： There are disclosed a multilayer silver halide color photographic material comprising two kinds of cyan couplers and a multilayer silver halide color photographic material comprising two kinds of cyan couplers, a magenta coupler, and a yellow coupler in respective photosensitive layer. The disclosure as described provides a multilayer silver halide color photographic material that is good in color-forming property, that will be less stained, and that is improved in image-lasting quality and in fastness under severe conditions.
摘要翻译：公开了包含两种青色成色剂和多层卤化银彩色照相材料的多层卤化银彩色照相材料，其中包括两种青色成色剂，品红色成色剂和黄色成色剂。所述的公开内容提供了一种成色性良好的多层卤化银彩色照相材料，其染色较少，而且在恶劣条件下的持久质量和牢度得到改善。

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