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    • 9. 发明申请
    • FILM-FORMING APPARATUS AND METHOD
    • 成膜装置和方法
    • US20120244684A1
    • 2012-09-27
    • US13404117
    • 2012-02-24
    • Kunihiko SuzukiHideki Ito
    • Kunihiko SuzukiHideki Ito
    • H01L21/205C23C16/46C23C16/00
    • H01L21/0262C23C16/45517C23C16/45591C23C16/46C30B25/02C30B25/08C30B25/10C30B29/36H01L21/0237H01L21/02532
    • A film-forming apparatus and method is provided that includes a reflector and insulator capable of suppressing the thermal degradation of components in close proximity to the heater in a film-forming apparatus. In a film-forming apparatus the reflector is used in combination with insulator. Specifically, in a film-forming apparatus a reflector is disposed below a heater with the insulator placed below the reflector. The insulator absorbs the radiant heat from the heater thus suppressing an excessive rise in temperature around the heater, it is therefore possible to prevent thermal degradation of components in close proximity of the heater. For example, when the temperature of a semiconductor substrate is 1650° C., the temperature of the quartz heater base maybe about 1000° C. This is lower than the softening point temperature of the quartz heater base, preventing deformation of the heater base.
    • 提供了一种成膜装置和方法,其包括反射器和绝缘体,其能够抑制成膜装置中加热器附近的部件的热劣化。 在成膜设备中,反射器与绝缘体组合使用。 具体地,在成膜装置中,反射器设置在加热器下方,绝缘体位于反射器下方。 绝缘子吸收来自加热器的辐射热,从而抑制加热器周围温度的过度上升,因此可以防止加热器附近的部件的热劣化。 例如,当半导体基板的温度为1650℃时,石英加热器基座的温度可以为约1000℃。这低于石英加热器基座的软化点温度,从而防止加热器基座的变形。
    • 10. 发明申请
    • FILM-FORMING APPARATUS AND FILM-FORMING METHOD
    • 薄膜成型装置和成膜方法
    • US20120070577A1
    • 2012-03-22
    • US13231265
    • 2011-09-13
    • Kaori DEURAShinya HigashiKunihiko SuzukiHideki Ito
    • Kaori DEURAShinya HigashiKunihiko SuzukiHideki Ito
    • C23C16/46B05C13/00B05C9/14
    • C23C16/4584C23C16/46C30B25/10C30B29/403
    • A film-forming apparatus and film-forming method is provided that includes a reflector system capable of adjusting the temperature distribution of a substrate. The essential role of a reflector is to reduce the output of a heater by reflecting radiation heat from the heater and to protect members provided below the heater from heat. When a silicon wafer is heated by a first heater and a second heater, the temperature of the silicon wafer becomes higher in the inner circumferential part of the wafer rather than in the outer circumferential part of the silicon wafer. When a ring-shaped reflector is used, radiation heat is reflected by the ring-shaped portion, but is not reflected by the inner circumferential part of the reflector. Therefore, the use of a ring-shaped reflector makes it possible to allow a wafer to have an even heating distribution.
    • 提供了一种成膜装置和成膜方法,其包括能够调节基板的温度分布的反射器系统。 反射器的重要作用是通过反射来自加热器的辐射热量来减少加热器的输出并且保护设置在加热器下面的部件免受热量的影响。 当硅晶片被第一加热器和第二加热器加热时,硅晶片的温度在晶片的内周部分而不是在硅晶片的外周部分变高。 当使用环形反射器时,辐射热被环形部分反射,但不被反射器的内周部分反射。 因此,使用环形反射器使得可以允许晶片具有均匀的加热分布。