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1. 发明授权

US07888702B2 Display device and manufacturing method of the display device 有权
标题翻译：显示装置的显示装置及制造方法
公开(公告)号：US07888702B2
公开(公告)日：2011-02-15
申请号：US11395221
申请日：2006-04-03
申请人： Kengo Akimoto , Hisashi Ohtani , Misako Hirosue
发明人： Kengo Akimoto , Hisashi Ohtani , Misako Hirosue
IPC分类号： H01L29/66
CPC分类号： H01L27/124 , H01L27/3244 , H01L2227/323
摘要： It is an object of the present invention to provide a technique to manufacture a highly reliable display device at a low cost with high yield. A display device according to the present invention includes a semiconductor layer including an impurity region of one conductivity type; a gate insulating layer, a gate electrode layer, and a wiring layer in contact with the impurity region of one conductivity type, which are provided over the semiconductor layer; a conductive layer which is formed over the gate insulating layer and in contact with the wiring layer; a first electrode layer in contact with the conductive layer; an electroluminescent layer provided over the first electrode layer; and a second electrode layer, where the wiring layer is electrically connected to the first electrode layer with the conductive layer interposed therebetween.
摘要翻译：本发明的目的是提供一种以高成本低成本制造高度可靠的显示装置的技术。根据本发明的显示装置包括：包括一种导电类型的杂质区的半导体层; 栅极绝缘层，栅极电极层和与一个导电类型的杂质区域接触的布线层，设置在半导体层上; 导电层，其形成在所述栅绝缘层上并与所述布线层接触; 与所述导电层接触的第一电极层; 设置在所述第一电极层上的电致发光层; 以及第二电极层，其中所述布线层与所述第一电极层电连接，其间插入有导电层。

2. 发明申请

US20060231858A1 Display device and manufacturing method of the display device 有权
公开(公告)号：US20060231858A1
公开(公告)日：2006-10-19
申请号：US11395221
申请日：2006-04-03
申请人： Kengo Akimoto , Hisashi Ohtani , Misako Hirosue
发明人： Kengo Akimoto , Hisashi Ohtani , Misako Hirosue
IPC分类号： H01L31/111 , H01L21/84 , H01L29/74 , H01L21/00 , H01L29/43
CPC分类号： H01L27/124 , H01L27/3244 , H01L2227/323
摘要： It is an object of the present invention to provide a technique to manufacture a highly reliable display device at a low cost with high yield. A display device according to the present invention includes a semiconductor layer including an impurity region of one conductivity type; a gate insulating layer, a gate electrode layer, and a wiring layer in contact with the impurity region of one conductivity type, which are provided over the semiconductor layer; a conductive layer which is formed over the gate insulating layer and in contact with the wiring layer; a first electrode layer in contact with the conductive layer; an electroluminescent layer provided over the first electrode layer; and a second electrode layer, where the wiring layer is electrically connected to the first electrode layer with the conductive layer interposed therebetween.

3. 发明授权

US08592861B2 Display device and manufacturing method of the display device 有权
标题翻译：显示装置的显示装置及制造方法
公开(公告)号：US08592861B2
公开(公告)日：2013-11-26
申请号：US13537408
申请日：2012-06-29
申请人： Kengo Akimoto , Hisashi Ohtani , Misako Hirosue
发明人： Kengo Akimoto , Hisashi Ohtani , Misako Hirosue
IPC分类号： H01L29/66
CPC分类号： H01L27/124 , H01L27/3244 , H01L2227/323
摘要： It is an object of the present invention to provide a technique to manufacture a highly reliable display device at a low cost with high yield. A display device according to the present invention includes a semiconductor layer including an impurity region of one conductivity type; a gate insulating layer, a gate electrode layer, and a wiring layer in contact with the impurity region of one conductivity type, which are provided over the semiconductor layer; a conductive layer which is formed over the gate insulating layer and in contact with the wiring layer; a first electrode layer in contact with the conductive layer; an electroluminescent layer provided over the first electrode layer; and a second electrode layer, where the wiring layer is electrically connected to the first electrode layer with the conductive layer interposed therebetween.
摘要翻译：本发明的目的是提供一种以高成本低成本制造高度可靠的显示装置的技术。根据本发明的显示装置包括：包括一种导电类型的杂质区的半导体层; 栅极绝缘层，栅极电极层和与一种导电类型的杂质区域接触的布线层，其设置在半导体层上; 导电层，其形成在所述栅绝缘层上并与所述布线层接触; 与导电层接触的第一电极层; 设置在所述第一电极层上的电致发光层; 以及第二电极层，其中所述布线层与所述第一电极层电连接，其间插入有导电层。

4. 发明申请

US20120261671A1 DISPLAY DEVICE AND MANUFACTURING METHOD OF THE DISPLAY DEVICE 有权
标题翻译：显示装置的显示装置和制造方法
公开(公告)号：US20120261671A1
公开(公告)日：2012-10-18
申请号：US13537408
申请日：2012-06-29
申请人： Kengo AKIMOTO , Hisashi Ohtani , Misako Hirosue
发明人： Kengo AKIMOTO , Hisashi Ohtani , Misako Hirosue
IPC分类号： H01L29/786
CPC分类号： H01L27/124 , H01L27/3244 , H01L2227/323
摘要： It is an object of the present invention to provide a technique to manufacture a highly reliable display device at a low cost with high yield. A display device according to the present invention includes a semiconductor layer including an impurity region of one conductivity type; a gate insulating layer, a gate electrode layer, and a wiring layer in contact with the impurity region of one conductivity type, which are provided over the semiconductor layer; a conductive layer which is formed over the gate insulating layer and in contact with the wiring layer; a first electrode layer in contact with the conductive layer; an electroluminescent layer provided over the first electrode layer; and a second electrode layer, where the wiring layer is electrically connected to the first electrode layer with the conductive layer interposed therebetween.
摘要翻译：本发明的目的是提供一种以高成本低成本制造高度可靠的显示装置的技术。根据本发明的显示装置包括：包括一种导电类型的杂质区的半导体层; 栅极绝缘层，栅极电极层和与一个导电类型的杂质区域接触的布线层，设置在半导体层上; 导电层，其形成在所述栅绝缘层上并与所述布线层接触; 与导电层接触的第一电极层; 设置在所述第一电极层上的电致发光层; 以及第二电极层，其中所述布线层与所述第一电极层电连接，其间插入有导电层。

5. 发明授权

US08212284B2 Display device and manufacturing method of the display device 有权
标题翻译：显示装置的显示装置及制造方法
公开(公告)号：US08212284B2
公开(公告)日：2012-07-03
申请号：US13010362
申请日：2011-01-20
申请人： Kengo Akimoto , Hisashi Ohtani , Misako Hirosue
发明人： Kengo Akimoto , Hisashi Ohtani , Misako Hirosue
IPC分类号： H01L29/66
CPC分类号： H01L27/124 , H01L27/3244 , H01L2227/323
摘要： It is an object of the present invention to provide a technique to manufacture a highly reliable display device at a low cost with high yield. A display device according to the present invention includes a semiconductor layer including an impurity region of one conductivity type; a gate insulating layer, a gate electrode layer, and a wiring layer in contact with the impurity region of one conductivity type, which are provided over the semiconductor layer; a conductive layer which is formed over the gate insulating layer and in contact with the wiring layer; a first electrode layer in contact with the conductive layer; an electroluminescent layer provided over the first electrode layer; and a second electrode layer, where the wiring layer is electrically connected to the first electrode layer with the conductive layer interposed therebetween.
摘要翻译：本发明的目的是提供一种以高成本低成本制造高度可靠的显示装置的技术。根据本发明的显示装置包括：包括一种导电类型的杂质区的半导体层; 栅极绝缘层，栅极电极层和与一个导电类型的杂质区域接触的布线层，设置在半导体层上; 导电层，其形成在所述栅绝缘层上并与所述布线层接触; 与导电层接触的第一电极层; 设置在所述第一电极层上的电致发光层; 以及第二电极层，其中所述布线层与所述第一电极层电连接，其间插入有导电层。

6. 发明申请

US20090017599A1 Method for manufacturing semiconductor device 有权
公开(公告)号：US20090017599A1
公开(公告)日：2009-01-15
申请号：US12232049
申请日：2008-09-10
申请人： Shingo Eguchi , Yohei Monma , Atsuhiro Tani , Misako Hirosue , Kenichi Hashimoto , Yasuharu Hosaka
发明人： Shingo Eguchi , Yohei Monma , Atsuhiro Tani , Misako Hirosue , Kenichi Hashimoto , Yasuharu Hosaka
IPC分类号： H01L21/30
CPC分类号： H01L21/67132 , H01L21/02244 , H01L21/02252 , H01L21/67092 , H01L21/707 , H01L27/1266
摘要： An object is to suppress discharge due to static electricity generated by peeling, when an element formation layer including a semiconductor element is peeled from a substrate. Over the substrate, the release layer and the element formation layer are formed. The support base material which can be peeled later is fixed to the upper surface of the element formation layer. The element formation layer is transformed through the support base material, and peeling is generated at an interface between the element formation layer and the release layer. Peeling is performed while the liquid is being supplied so that the element formation layer and the release layer which appear sequentially by peeling are wetted with the liquid such as pure water. Electric charge generated on the surfaces of the element formation layer and the release layer can be diffused by the liquid, and discharge by peeling electrification can be eliminated.

7. 发明授权

US08889438B2 Peeling apparatus and manufacturing apparatus of semiconductor device 有权
标题翻译：半导体装置的剥离装置及制造装置
公开(公告)号：US08889438B2
公开(公告)日：2014-11-18
申请号：US13406603
申请日：2012-02-28
申请人： Shingo Eguchi , Yohei Monma , Atsuhiro Tani , Misako Hirosue , Kenichi Hashimoto , Yasuharu Hosaka
发明人： Shingo Eguchi , Yohei Monma , Atsuhiro Tani , Misako Hirosue , Kenichi Hashimoto , Yasuharu Hosaka
IPC分类号： H01L21/58 , B32B43/00 , H01L21/683 , H01L21/67 , H01L27/12
CPC分类号： H01L27/1266 , B32B43/006 , G02F1/1303 , G02F1/13306 , G06K19/0772 , H01L21/67132 , H01L21/6835 , H01L27/1214 , H01L27/1218 , H01L27/156 , H01L31/1892 , H01L31/206 , H01L33/005 , H01L51/003 , H01L51/0097 , H01L2221/68318 , H01L2221/6835 , H01L2221/68363 , H01L2221/68386 , H01L2221/68395 , H01L2227/326 , H01L2251/5338 , H01L2924/19041 , H01L2924/30105 , Y10T29/41
摘要： To eliminate electric discharge when an element formation layer including a semiconductor element is peeled from a substrate used for manufacturing the semiconductor element, a substrate over which an element formation layer and a peeling layer are formed and a film are made to go through a gap between pressurization rollers. The film is attached to the element formation layer between the pressurization rollers, bent along a curved surface of the pressurization roller on a side of the pressurization rollers, and collected. Peeling is generated between the element formation layer and the peeling layer and the element formation layer is transferred to the film. Liquid is sequentially supplied by a nozzle to a gap between the element formation layer and the peeling layer, which is generated by peeling, so that electric charge generated on surfaces of the element formation layer and the peeling layer is diffused by the liquid.
摘要翻译：为了在从用于制造半导体元件的基板剥离包含半导体元件的元件形成层而被除去形成有元件形成层和剥离层的基板和薄膜之间的间隙中时，为了消除放电，加压辊。该膜附着在加压辊之间的元件形成层上，加压辊的一侧的加压辊的弯曲表面沿加压辊的弯曲表面弯曲并收集。在元件形成层和剥离层之间产生剥离，并且元件形成层被转印到膜上。通过喷嘴将液体顺序地供给到通过剥离产生的元件形成层和剥离层之间的间隙，使得在元件形成层和剥离层的表面上产生的电荷被液体扩散。

8. 发明授权

US08772783B2 Display device 有权
标题翻译：显示设备
公开(公告)号：US08772783B2
公开(公告)日：2014-07-08
申请号：US11240568
申请日：2005-10-03
申请人： Misako Hirosue , Masahiro Katayama , Shunpei Yamazaki
发明人： Misako Hirosue , Masahiro Katayama , Shunpei Yamazaki
IPC分类号： H01L27/14 , H01L27/146
CPC分类号： H01L27/14605 , H01L27/12 , H01L27/1292 , H01L27/3211 , H01L27/3246 , H01L51/0011 , H01L51/56
摘要： The invention provides a technique to manufacture a display device with high image quality and reliability at low cost with high yield. According to the invention, a spacer is provided over a pixel electrode layer in a pixel region. Moreover, a surface of an insulating layer which functions as a partition which covers the periphery of the pixel electrode layer is formed at a high position from the surface of the pixel electrode due to stacked layers under the insulating layer. These spacer and insulator which function as a spacer support a mask used for selectively forming a light emitting material over a pixel electrode layer, thereby preventing the mask from contacting the pixel electrode layer due to a twist and deflection of the mask. Accordingly, such a damage as a crack does not occur in the pixel electrode layer which results in having no defect in shape. Therefore, a display device which performs a high resolution display with high reliability can be manufactured.
摘要翻译：本发明提供了以低成本，高产率制造具有高图像质量和可靠性的显示装置的技术。根据本发明，在像素区域中的像素电极层上设置间隔物。此外，作为覆盖像素电极层的周围的分隔物的绝缘层的表面由于在绝缘层下层叠的层而形成在从像素电极的表面的高位置。用作间隔物的这些间隔物和绝缘体支持用于在像素电极层上选择性地形成发光材料的掩模，从而防止掩模由于掩模的扭转和偏转而与像素电极层接触。因此，在像素电极层中不会发生像裂纹这样的损伤，导致形状没有缺陷。因此，可以制造以高可靠性进行高分辨率显示的显示装置。

9. 发明授权

US08048770B2 Method for manufacturing semiconductor device 有权
公开(公告)号：US08048770B2
公开(公告)日：2011-11-01
申请号：US12232036
申请日：2008-09-10
申请人： Shingo Eguchi , Yohei Monma , Atsuhiro Tani , Misako Hirosue , Kenichi Hashimoto , Yasuharu Hosaka
发明人： Shingo Eguchi , Yohei Monma , Atsuhiro Tani , Misako Hirosue , Kenichi Hashimoto , Yasuharu Hosaka
IPC分类号： H01L21/30 , H01L21/46 , H01L21/322 , H01L21/20 , H01L21/36 , H01G9/20
CPC分类号： H01L21/67132 , H01L21/02244 , H01L21/02252 , H01L21/67092 , H01L21/707 , H01L27/1266
摘要： An object is to suppress discharge due to static electricity generated by peeling, when an element formation layer including a semiconductor element is peeled from a substrate. Over the substrate, the release layer and the element formation layer are formed. The support base material which can be peeled later is fixed to the upper surface of the element formation layer. The element formation layer is transformed through the support base material, and peeling is generated at an interface between the element formation layer and the release layer. Peeling is performed while the liquid is being supplied so that the element formation layer and the release layer which appear sequentially by peeling are wetted with the liquid such as pure water. Electric charge generated on the surfaces of the element formation layer and the release layer can be diffused by the liquid, and discharge by peeling electrification can be eliminated.

10. 发明申请

US20090017567A1 Method for manufacturing semiconductor device 有权
公开(公告)号：US20090017567A1
公开(公告)日：2009-01-15
申请号：US12232036
申请日：2008-09-10
申请人： Shingo Eguchi , Yohei Monma , Atsuhiro Tani , Misako Hirosue , Kenichi Hashimoto , Yasuharu Hosaka
发明人： Shingo Eguchi , Yohei Monma , Atsuhiro Tani , Misako Hirosue , Kenichi Hashimoto , Yasuharu Hosaka
IPC分类号： H01L21/50
CPC分类号： H01L21/67132 , H01L21/02244 , H01L21/02252 , H01L21/67092 , H01L21/707 , H01L27/1266
摘要： An object is to suppress discharge due to static electricity generated by peeling, when an element formation layer including a semiconductor element is peeled from a substrate. Over the substrate, the release layer and the element formation layer are formed. The support base material which can be peeled later is fixed to the upper surface of the element formation layer. The element formation layer is transformed through the support base material, and peeling is generated at an interface between the element formation layer and the release layer. Peeling is performed while the liquid is being supplied so that the element formation layer and the release layer which appear sequentially by peeling are wetted with the liquid such as pure water. Electric charge generated on the surfaces of the element formation layer and the release layer can be diffused by the liquid, and discharge by peeling electrification can be eliminated.

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