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1. 发明申请

US20120077304A1 METHOD FOR FORMING IMPURITY LAYER, EXPOSURE MASK THEREFORE AND METHOD FOR PRODUCING SOLID-STATE IMAGING DEVICE 有权
标题翻译：形成复合层的方法，其中的曝光掩模和用于生产固态成像装置的方法
公开(公告)号：US20120077304A1
公开(公告)日：2012-03-29
申请号：US13225846
申请日：2011-09-06
申请人： Ken TOMITA , Yoshihiro Obara
发明人： Ken TOMITA , Yoshihiro Obara
IPC分类号： H01L31/18 , H01L21/22
CPC分类号： H01L27/14683 , G03F1/28
摘要： A method for forming an impurity layer, includes forming a resist material 16 on a surface portion of a semiconductor substrate 15; exposing the resist material using a grating mask 10 comprising a light transmission region 11 including a plurality of unit light transmission regions 14 being arranged two-dimensionally, each being composed of a plurality of minute partial sections 13A to 13D having different transmittance; forming a resist layer 18 on the surface of the semiconductor substrate 15 by developing the exposed resist material, the resist layer including a thin film region 17 having a film thickness corresponding to the transmittance of the light transmission region; implanting ions to the semiconductor substrate 15 via the thin film region; and diffusing ion groups 21A′, 21B′, 21C′, and 21D′ that are implanted at the same depth such that the ion groups are coupled in a lateral direction.
摘要翻译：一种形成杂质层的方法包括在半导体衬底15的表面部分上形成抗蚀剂材料16; 使用包括透光区域11的光栅掩模10曝光抗蚀剂材料，光栅掩模10包括二维布置的多个单位光透射区域14，每个由多个具有不同透射率的微小部分部分13A至13D组成; 通过显影所述曝光的抗蚀剂材料在所述半导体衬底15的表面上形成抗蚀剂层18，所述抗蚀剂层包括具有对应于所述透光区域的透射率的膜厚度的薄膜区域17; 通过薄膜区域将离子注入到半导体衬底15; 和扩散离子组21A'，21B'，21C'和21D'，其以相同的深度植入，使得离子基团沿横向连接。

2. 发明申请

US20110233619A1 EXPOSURE MASK USED FOR MANUFACTURING A SEMICONDUCTOR DEVICE HAVING IMPURITY LAYER AND A SEMICONDUCTOR DEVICE 失效
标题翻译：用于制造具有稀土层和半导体器件的半导体器件的曝光掩模
公开(公告)号：US20110233619A1
公开(公告)日：2011-09-29
申请号：US13049420
申请日：2011-03-16
申请人： Ken TOMITA
发明人： Ken TOMITA
IPC分类号： H01L27/148 , G03F1/00 , G03F7/20 , H01L27/146
CPC分类号： H01L29/76808 , G03F1/38 , G03F1/50 , H01L27/14618 , H01L27/14683 , H01L27/14806 , H01L27/14831 , H01L2224/13
摘要： An exposure mask according to an embodiment of the invention includes a first transmission region where a plurality of dots through which light is shielded or transmitted are arrayed into a matrix form having rows and columns and a second transmission region where a plurality of dots through which the light is shielded or transmitted are arrayed into a matrix form having rows and columns and is disposed adjacent to the first transmission region.The dots arrayed in a row or a column of the first transmission region, which is adjacent to the second transmission region, have an area intermediate between areas of dots arrayed on both sides of the row or the column.
摘要翻译：根据本发明的实施例的曝光掩模包括第一透射区域，其中光被屏蔽或透射的多个点排列成具有行和列的矩阵形式，以及第二透射区域，其中多个点光被屏蔽或透射排列成具有行和列的矩阵形式并且被布置为与第一透射区相邻。排列在与第二透射区域相邻的第一透射区域的行或列中的点具有在排或列的两侧排列的点的区域之间的区域。

3. 发明申请

US20120329201A1 METHOD FOR MANUFACTURING SOLID-STATE IMAGING DEVICE 有权
标题翻译：制造固态成像装置的方法
公开(公告)号：US20120329201A1
公开(公告)日：2012-12-27
申请号：US13417567
申请日：2012-03-12
申请人： Ken TOMITA , Atsushi SASAKI
发明人： Ken TOMITA , Atsushi SASAKI
IPC分类号： H01L31/18
CPC分类号： H01L27/14812 , H01L27/14603 , H01L27/14609 , H01L27/1463 , H01L27/14643 , H01L27/14689 , H01L31/03529 , H01L31/103 , Y02E10/50
摘要： Certain embodiments provide method for manufacturing a solid-state imaging device, including forming an electrode and forming a second impurity layer. The electrode is formed on a semiconductor substrate including a first impurity layer of a first conductivity type on a surface. The second impurity layer is a second conductivity type and is formed by implanting an impurity of a second conductivity type into the first impurity layer in an oblique direction with respect to the surface of the semiconductor substrate on the condition that the impurity penetrates an end portion of the electrode, based on a position of the electrode. The second impurity layer is bonded to the first impurity layer to constitute a photodiode, and a portion of the second impurity layer is disposed under the electrode.
摘要翻译：某些实施例提供了制造固态成像装置的方法，包括形成电极和形成第二杂质层。电极形成在包括表面上的第一导电类型的第一杂质层的半导体衬底上。第二杂质层是第二导电类型，并且是通过在杂质贯穿半导体衬底的端部的条件下相对于半导体衬底的表面在倾斜方向上将第二导电类型的杂质注入第一杂质层而形成的电极，基于电极的位置。第二杂质层被结合到第一杂质层以构成光电二极管，并且第二杂质层的一部分设置在电极下方。

4. 发明申请

US20120070970A1 METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US20120070970A1
公开(公告)日：2012-03-22
申请号：US13225790
申请日：2011-09-06
申请人： Ken TOMITA
发明人： Ken TOMITA
IPC分类号： H01L21/266
CPC分类号： H01L21/2652 , H01L21/266
摘要： A method for manufacturing a semiconductor device includes; exposing a resist layer 16 uniformly formed on a semiconductor substrate 11 using a grating mask 17 having transmission regions 17A whose transmittances decrease toward a transfer direction of charges, forming a plurality of residual resist films 18 whose film thicknesses change according to the transmittances of the grating mask 17 by developing the exposed resist layer 16, and forming a plurality of impurity layers 13 having an inner potential including a predetermined reference potential Pb and a predetermined step potential Ps by implanting ions 20 into the semiconductor substrate 11 through the residual resist films 18, wherein an acceleration voltage and a dose amount of the ion implantation device 19 are determined so that an error of the inner potential caused by an error of the film thickness of the residual resist film 18 stays within a permissible range.
摘要翻译：半导体器件的制造方法包括：使用具有透射率朝着电荷传送方向减小的透射区域17A的光栅掩模17曝光均匀地形成在半导体衬底11上的抗蚀剂层16，形成多个残留抗蚀剂膜18，其残留抗蚀剂膜18根据光栅的透射率而变化通过显影曝光的抗蚀剂层16，以及通过残留的抗蚀剂膜18将离子20注入到半导体衬底11中，形成具有包括预定参考电位Pb和预定阶跃电位Ps的内部电位的多个杂质层13，其中确定离子注入装置19的加速电压和剂量，使得由残留抗蚀剂膜18的膜厚度的误差引起的内部电位的误差保持在容许范围内。

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