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1. 发明授权

US5179070A Semiconductor substrate having a superconducting thin film with a buffer layer in between 失效
标题翻译：半导体衬底具有介于其间的缓冲层的超导薄膜
公开(公告)号：US5179070A
公开(公告)日：1993-01-12
申请号：US726124
申请日：1991-07-02
申请人： Keizo Harada , Hideo Itozaki , Naoji Fujimori , Shuji Yazu , Tetsuji Jodai
发明人： Keizo Harada , Hideo Itozaki , Naoji Fujimori , Shuji Yazu , Tetsuji Jodai
IPC分类号： H01L39/24
CPC分类号： H01L39/2461
摘要： A semiconductor substrate such as silicon single crystal having a thin film of a superconducting material composed of a compound oxide whose critical temperature is higher than 30 K such as Ln.sub.1 Ba.sub.2 Cu.sub.3 O.sub.7-.delta. (Ln is Y or lanthanide), characterized in that a buffer layer composed of ZrO.sub.2, MgO containing or not containing metal element such as Ag is interposed between the semiconductor substrate and the superconducting thin film.
摘要翻译：具有由临界温度高于30K的复合氧化物如Ln1Ba2Cu3O7-δ（Ln是Y或镧系元素）组成的超导材料的薄膜的半导体衬底，其特征在于，由含有或不含有金属元素如Ag的ZrO 2，被置于半导体衬底和超导薄膜之间。

2. 发明授权

US5084265A Process for preparing a thin film of superconducting compound oxide 失效
标题翻译：制备超薄化合物氧化物薄膜的方法
公开(公告)号：US5084265A
公开(公告)日：1992-01-28
申请号：US525217
申请日：1990-05-16
申请人： Keizo Harada , Naoji Fujimori , Shuji Yazu , Tetsuji Jodai
发明人： Keizo Harada , Naoji Fujimori , Shuji Yazu , Tetsuji Jodai
IPC分类号： C23C14/08 , C23C14/24 , C30B23/02 , H01L39/24
CPC分类号： H01L39/2432 , C23C14/087 , C23C14/24 , C30B23/02 , C30B29/22 , C30B29/225 , C30B29/68
摘要： A process for preparing a superconducting thin film of a compound oxide by a process which is similar to MBE technique. In the present process, a plurality of atom beams or molecular beams each contains one element selected from constituent elements of the compound oxide are directed onto a substrate in a predetermined order, so that a plurality of mono-molecular layers are deposited on the substrate.

3. 发明授权

US5401715A Semiconductor substrate having a superconducting thin film 失效
标题翻译：具有超导薄膜的半导体衬底
公开(公告)号：US5401715A
公开(公告)日：1995-03-28
申请号：US972903
申请日：1992-11-06
申请人： Hideo Itozaki , Keizo Harada , Naoji Fujimori , Shuji Yazu , Tetsuji Jodai
发明人： Hideo Itozaki , Keizo Harada , Naoji Fujimori , Shuji Yazu , Tetsuji Jodai
IPC分类号： H01L39/14 , H01L39/24 , H01L39/12
CPC分类号： H01L39/143 , H01L39/2458 , Y10S428/93 , Y10S505/701 , Y10S505/706 , Y10T428/12528 , Y10T428/12611
摘要： A semiconductor substrate having a silicon substrate and a superconducting thin film layer composed of compound oxide such as Ln.sub.1 Ba.sub.2 Cu.sub.3 O.sub.7-.delta. (Ln is lanthanide) and stratified on the silicon substrate, characterized in that an intermediate semiconductor layer composed of compound semiconductor material such as GaAs is interposed between the silicon substrate and the superconducting thin film layer.
摘要翻译：具有硅衬底的半导体衬底和由诸如Ln1Ba2Cu3O7-δ（Ln是镧系元素）的复合氧化物构成的层叠在硅衬底上的超导薄膜层，其特征在于由诸如GaAs的化合物半导体材料构成的中间半导体层是介于硅衬底和超导薄膜层之间。

4. 发明授权

US5169829A Method for producing a superconducting circuit 失效
标题翻译：超导电路的制造方法
公开(公告)号：US5169829A
公开(公告)日：1992-12-08
申请号：US873351
申请日：1992-04-21
申请人： Nobuhiko Fujita , Hideo Itozaki , Saburo Tanaka , Naoji Fujimori , Takahiro Imai , Keizo Harada , Shuji Yazu , Tetsuji Jodai , Noriyuki Yoshida , Satoshi Takano , Kenji Miyazaki , Noriki Hayashi
发明人： Nobuhiko Fujita , Hideo Itozaki , Saburo Tanaka , Naoji Fujimori , Takahiro Imai , Keizo Harada , Shuji Yazu , Tetsuji Jodai , Noriyuki Yoshida , Satoshi Takano , Kenji Miyazaki , Noriki Hayashi
IPC分类号： H01L39/24
CPC分类号： H01L39/249 , H01L39/2435 , H01L39/2464 , Y10S505/73 , Y10S505/742
摘要： An improvement in a process for manufacturing a superconductor, characterized by irradiating a material composed of compound oxide by one of ion beams selected from oxygen ion beam, inert gas ion beams and an ion beam consisting of a mixture of oxygen gas and inert gas to convert said material into a superconductor. When a focused ion beam is directed onto desired areas on said film layer, the areas irradiated by the ion beam are converted to a superconductor in a form of a superconducting circuit.
摘要翻译：一种制造超导体的方法的改进，其特征在于，通过从氧离子束，惰性气体离子束和由氧气和惰性气体的混合物组成的离子束中的一种离子束照射由复合氧化物组成的材料，以转换将材料称为超导体。当聚焦离子束被引导到所述膜层上的所需区域上时，由离子束照射的区域被转换为超导电路形式的超导体。

5. 发明授权

US4996185A Ceramic superconducting thin film 失效
标题翻译：陶瓷超导薄膜
公开(公告)号：US4996185A
公开(公告)日：1991-02-26
申请号：US200206
申请日：1988-05-31
申请人： Naoji Fujimori , Keizo Harada , Shuji Yazu , Tetsuji Jodai
发明人： Naoji Fujimori , Keizo Harada , Shuji Yazu , Tetsuji Jodai
IPC分类号： C30B23/02 , H01L39/24
CPC分类号： H01L39/2458 , C30B23/02 , C30B29/22 , C30B29/225 , H01L39/2435 , Y10S505/729
摘要： In a superconducting thin film composed of compound oxide containing at least one of element selected from a group comprising Y, La, Gd, Ho, Er, Tm, Yb, Dy, Sm, Eu and Lu, Ba and Cu, improvement in that said thin film consists of a single crystal or polycrystal whose c-axis is orientated to a predetermined direction or mono-directionally.

6. 发明授权

US5910662A Semiconductor substrate having a superconducting thin film 失效
标题翻译：具有超导薄膜的半导体衬底
公开(公告)号：US5910662A
公开(公告)日：1999-06-08
申请号：US167437
申请日：1993-12-14
申请人： Hideo Itozaki , Keizo Harada , Naoji Fujimori , Shuji Yazu , Tetsuji Jodai
发明人： Hideo Itozaki , Keizo Harada , Naoji Fujimori , Shuji Yazu , Tetsuji Jodai
IPC分类号： H01L39/14 , H01L39/24 , H01L29/06
CPC分类号： H01L39/2458 , H01L39/146
摘要： A semiconductor substrate comprising a single crystal substrate base such a silicon and a superconducting thin film layer deposited on said substrate base and composed of compound oxide such as Ln.sub.1 Ba.sub.2 Cu.sub.3 O.sub.7-.delta.. (Ln is lanthanide).
摘要翻译：一种半导体衬底，其包括单晶衬底基底如硅和沉积在所述衬底基底上并由诸如Ln1Ba2Cu3O7-δ的复合氧化物组成的超导薄膜层。（Ln是镧系元素）。

7. 发明授权

US5221660A Semiconductor substrate having a superconducting thin film 失效
标题翻译：具有超级薄膜的半导体衬底
公开(公告)号：US5221660A
公开(公告)日：1993-06-22
申请号：US856824
申请日：1992-03-25
申请人： Hideo Itozaki , Keizo Harada , Naoji Fujimori , Shuji Yazu , Tetsuji Jodai
发明人： Hideo Itozaki , Keizo Harada , Naoji Fujimori , Shuji Yazu , Tetsuji Jodai
IPC分类号： H01L39/14 , H01L39/24
CPC分类号： H01L39/143 , H01L39/2458 , Y10S428/93 , Y10S505/701 , Y10S505/706 , Y10T428/12528 , Y10T428/12611
摘要： A semiconductor substrate having a silicon substrate and a superconducting thin film layer composed of compound oxide such as Ln.sub.1 Ba.sub.2 Cu.sub.3 O.sub.7-.delta. (Ln is lanthanide) and stratified on the silicon substrate, characterized in that an intermediate semiconductor layer composed of compound semiconductor material such as GaAs is interposed between the silicon substrate and the superconducting thin film layer.
摘要翻译：具有硅衬底的半导体衬底和由诸如Ln1Ba2Cu3O7-δ（Ln是镧系元素）的复合氧化物构成的层叠在硅衬底上的超导薄膜层，其特征在于由诸如GaAs的化合物半导体材料构成的中间半导体层是介于硅衬底和超导薄膜层之间。

8. 发明授权

US5206214A Method of preparing thin film of superconductor 失效
标题翻译：制备超导体薄膜的方法
公开(公告)号：US5206214A
公开(公告)日：1993-04-27
申请号：US833576
申请日：1992-02-10
申请人： Naoji Fujimori , Keizo Harada , Shuji Yazu , Tetsuji Jodai
发明人： Naoji Fujimori , Keizo Harada , Shuji Yazu , Tetsuji Jodai
IPC分类号： C30B23/02 , H01L39/24
CPC分类号： H01L39/2435 , C30B23/02 , C30B29/22 , C30B29/225 , Y10S505/731
摘要： A method for preparing a thin film of superconductor on a substrate by sputtering. A target prepared from an oxide containing Ba, Y, and Cu in atomic ratios Cu/Y of 2.5 to 3.5 and Ba/Y of 1.8 to 2.2 is employed to form by sputtering a superconducting thin film on a substrate at a temperature of 600.degree. to 800.degree. C. in an atmosphere having total gas pressure of 1.times.10.sup.-2 to 5.times.10.sup.-2 Torr. and containing Ar and O.sub.2 with an O.sub.2 content of 5 to 80 vol. %. The thin film thus formed is subjected to heat treatment at a temperature of 600.degree. to 930.degree. C. for 1 to 30 hours. The thin film after the heat treatment is cooled at a rate not more than 4.degree. C./min. The film forming surface of the substrate is chosen from the (100) surface or the (110) surface of a single crystal substrate which is lattice-matched with the (100) surface or the (110) surface of crystalline Y.sub.1 Ba.sub.2 Cu.sub.3 O.sub.7-n, where n represents a number in the range 0.ltoreq.n
摘要翻译：一种通过溅射在衬底上制备超导体薄膜的方法。通过将Cu / Y的原子比为2.5〜3.5，Ba / Y为1.8〜2.2的Ba，Y，Cu的氧化物制成的靶用于在600℃的温度下在基板上溅射超导薄膜至800℃，总气体压力为1×10 -2至5×10 -2乇。并含有O含量为5至80体积％的Ar和O 2。％。将这样形成的薄膜在600〜930℃的温度下进行1〜30小时的热处理。热处理后的薄膜以不高于4℃/分钟的速度冷却。基板的成膜表面选自与晶体Y1Ba2Cu3O7-n的（100）表面或（110）表面晶格匹配的单晶衬底的（100）表面或（110）表面，其中 n表示0

9. 发明授权

US4866032A Method and apparatus for producing thin film of high to superconductor compound having large area 失效
标题翻译：用于生产面积大的高超导体化合物薄膜的方法和装置
公开(公告)号：US4866032A
公开(公告)日：1989-09-12
申请号：US192903
申请日：1988-05-12
申请人： Naoji Fujimori , Keizo Harada , Shuji Yazu , Tetsuji Jodai
发明人： Naoji Fujimori , Keizo Harada , Shuji Yazu , Tetsuji Jodai
IPC分类号： C23C14/34 , C23C14/35 , C23C14/46 , C23C14/56
CPC分类号： C23C14/562 , C23C14/35 , Y10S505/816
摘要： A thin film of a preselected compound having a large area is continuously produced on a substrate by depositing elements constituting the preselected compound from a target member onto the surface of a substrate by sputtering, comprising the steps of:rotating a first target member having a flat surface disposed around an axis which crosses the surface and comprising elements of the preselected compound so that a first part of the surface of target member is positioned at a first sputtering position and another part of the first target member is positioned at a second sputtering position,at the first position, sputtering at least one second target comprising at least one element of the preselected compound which is easily sputtered from the first target member so as to supply the deficient element to the first target member, andat the second position, sputtering the elements from the first target member so as to deposit them on the surface of said substrate while continuously supplying the substrate so that a part of the substrate is positioned in the path of the sputtered elements,whereby the elementary composition of the first target member at the second position is adjusted to the preselected composition.

10. 发明授权

US5225397A Method for preparing superconducting thin film 失效
标题翻译：制备超导薄膜的方法
公开(公告)号：US5225397A
公开(公告)日：1993-07-06
申请号：US806822
申请日：1991-12-06
申请人： Hideo Itozaki , Saburo Tanaka , Kenjiro Higaki , Hisao Hattori , Naoji Fujimori , Shuji Yazu , Tetsuji Jodai
发明人： Hideo Itozaki , Saburo Tanaka , Kenjiro Higaki , Hisao Hattori , Naoji Fujimori , Shuji Yazu , Tetsuji Jodai
IPC分类号： C04B35/45 , C23C14/08 , H01L39/12 , H01L39/24
CPC分类号： C23C14/087 , C04B35/4512 , H01L39/126 , H01L39/2419 , H01L39/2435 , H01L39/2464 , Y10S505/731 , Y10S505/816
摘要： A superconducting material composed mainly of compound oxide having a composition represented by the general formula:Tl.sub.x Ca.sub.y BaCu.sub.z O.sub.pin which "x", "y" and "z" are numbers each satisfies 0.5.ltoreq.x.ltoreq.3.0, 0.5.ltoreq.y.ltoreq.3.0, and 0.9.ltoreq.z.ltoreq.4.0 respectively.
摘要翻译：主要由复合氧化物组成的超导材料，其具有由以下通式表示的组成：TlxCayBaCuzOp，其中“x”，“y”和“z”各自为数，其分别满足0.5≤x≤3.0,0≤y 分别为

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