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1. 发明授权

US5709754A Method and apparatus for removing photoresist using UV and ozone/oxygen mixture 失效
标题翻译：使用UV和臭氧/氧气混合物去除光刻胶的方法和设备
公开(公告)号：US5709754A
公开(公告)日：1998-01-20
申请号：US581107
申请日：1995-12-29
申请人： Keith Morinville , J. Brett Rolfson
发明人： Keith Morinville , J. Brett Rolfson
IPC分类号： B08B7/00 , B23K26/12 , G03F7/42
CPC分类号： B23K26/123 , B08B7/0042 , B23K26/12 , B23K26/125 , B23K26/126 , B23K26/127 , B23K26/1436 , G03F7/42
摘要： A method and apparatus for removing photoresist from a substrate such as a semiconductor wafer are provided. The method includes placing the substrate in a reaction chamber containing an oxidizing gas that includes an ozone/oxygen mixture. At the same time, a UV laser beam is directed across the surface of the photoresist for driving an oxidation reaction. Specifically, the oxone decomposes into atomic and diatomic oxygen which react with carbon in the photoresist to form gaseous by-products such as (CO) and (CO.sub.2). These by-products are continuously exhausted from the reaction chamber by an evacuation pump. The method can be performed in stages wherein a first oxidizing gas comprising (O.sub.2) is used to remove a bulk of the photoresist and a second oxidizing gas comprising (O.sub.3 /O.sub.2) is used to remove a remaining portion of the photoresist.
摘要翻译：提供了用于从诸如半导体晶片的衬底去除光致抗蚀剂的方法和设备。该方法包括将基板放置在包含氧化气体的反应室中，该氧化气体包括臭氧/氧气混合物。同时，UV激光束被引导穿过光致抗蚀剂的表面以驱动氧化反应。具体地，该酮分解为与光致抗蚀剂中的碳反应形成气态副产物如（CO）和（CO 2）的原子和双原子氧。这些副产物通过抽空泵从反应室中不断排出。该方法可以在其中使用包含（O 2）的第一氧化气体去除大部分光致抗蚀剂并且包含（O 3 / O 2）的第二氧化气体用于除去光致抗蚀剂的剩余部分的阶段中进行。

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