专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20090191430A1 EXCHANGE COUPLED FILM, MAGNETORESISTIVE ELEMENT, AND THIN-FILM MAGNETIC HEAD 有权
标题翻译：交换耦合膜，磁性元件和薄膜磁头
公开(公告)号：US20090191430A1
公开(公告)日：2009-07-30
申请号：US12020773
申请日：2008-01-28
申请人： Keita KAWAMORI , Satoshi MIURA , Takumi YANAGISAWA
发明人： Keita KAWAMORI , Satoshi MIURA , Takumi YANAGISAWA
IPC分类号： G11B5/39 , G11B5/66
CPC分类号： G11B5/3967 , B82Y25/00 , G01R33/093 , G11B5/3906 , H01F10/30 , H01F10/325 , H01F10/3254 , H01F10/3272 , H01L43/08 , Y10T428/1121
摘要： The exchange coupled film according to the present invention comprises a buffer layer including a laminate in which an amorphous layer and a hafnium layer are laminated in that order, an antiferromagnetic layer laminated on the hafnium layer of the buffer layer via an intermediate layer with a thickness of at least 2 nm, and a pinned magnetic layer laminated on the antiferromagnetic layer.
摘要翻译：根据本发明的交换耦合膜包括缓冲层，该缓冲层包括层叠体，其中非晶层和铪层依次层叠，反铁磁层经由中间层层叠在缓冲层的铪层上，厚度为至少2nm，以及层叠在反铁磁性层上的钉扎磁性层。

2. 发明申请

US20080124581A1 TUNNEL MAGNETORESISTIVE EFFECT ELEMENT AND MANUFACTURING METHOD OF TUNNEL MAGNETORESISTIVE EFFECT ELEMENT 有权
标题翻译：隧道磁阻效应元件和隧道磁阻效应元件的制造方法
公开(公告)号：US20080124581A1
公开(公告)日：2008-05-29
申请号：US11944731
申请日：2007-11-26
申请人： Satoshi MIURA , Takumi YANAGISAWA
发明人： Satoshi MIURA , Takumi YANAGISAWA
IPC分类号： G11B5/39 , B05D5/12 , G11B5/66 , G11B5/127
CPC分类号： H01L43/08 , B82Y10/00 , B82Y25/00 , B82Y40/00 , G01R33/093 , G01R33/098 , G11B5/3906 , G11B5/3909 , H01F10/3254 , H01F10/3272 , H01F41/302 , H01L43/12 , Y10T428/1114
摘要： A TMR element includes a lower magnetic layer, an upper magnetic layer, and a tunnel barrier layer of crystalline insulation material sandwiched between the lower magnetic layer and the upper magnetic layer. The lower magnetic layer includes a first magnetic layer and a second magnetic layer sandwiched between the first magnetic layer and the tunnel barrier layer. The second magnetic layer is formed from a magnetic material containing at least one of Fe, Co and Ni.
摘要翻译： TMR元件包括夹在下磁性层和上磁性层之间的结晶绝缘材料的下磁性层，上磁性层和隧道势垒层。下磁性层包括夹在第一磁性层和隧道势垒层之间的第一磁性层和第二磁性层。第二磁性层由含有Fe，Co和Ni中的至少一种的磁性材料形成。

3. 发明申请

US20070264117A1 FUEL PUMP 有权
标题翻译：燃油泵
公开(公告)号：US20070264117A1
公开(公告)日：2007-11-15
申请号：US11737959
申请日：2007-04-20
申请人： Shigeru YOSHIDA , Satoshi MIURA
发明人： Shigeru YOSHIDA , Satoshi MIURA
IPC分类号： F04D5/00
CPC分类号： F02M37/048 , F04D5/005 , F04D5/006 , F04D29/445
摘要： A vapor lock in a fuel pump can be prevented by reducing the formation of vapor within the fuel. A first group of concavities may be formed in an inner circumferential region of an intake side face of an impeller, and a second group of concavities may be formed concentrically in a region outside of the first group of concavities. A third group of concavities that communicates with the second group of concavities may be formed in a discharge side face of the impeller. The impeller is housed within a casing. A first groove that faces the first group of concavities and a second groove that faces the second group of concavities may be formed in the face of the casing that faces the intake side face of the impeller. A third groove that faces the third group of concavities may be formed in the face of the casing that faces the discharge side face of the impeller.
摘要翻译：可以通过减少燃料内的蒸汽的形成来防止燃料泵中的蒸气锁。第一组凹部可以形成在叶轮的进气侧面的内周区域中，并且第二组凹部可以同心地形成在第一组凹部之外的区域中。可以在叶轮的排出侧面形成与第二组凹部连通的第三组凹部。叶轮容纳在外壳内。面对第一组凹部的第一凹槽和面向第二组凹部的第二凹槽可以形成在面向叶轮的进气侧面的壳体的表面中。面向第三组凹部的第三凹槽可以形成在面向叶轮的排出侧面的壳体的表面中。

4. 发明申请

US20070264423A1 MANUFACTURING METHOD OF TUNNEL MAGNETORESISTIVE EFFECT ELEMENT, MANUFACTURING METHOD OF THIN-FILM MAGNETIC HEAD, AND MANUFACTURING METHOD OF MAGNETIC MEMORY 审中-公开
标题翻译：隧道磁阻效应元件的制造方法，薄膜磁头的制造方法及磁记忆体的制造方法
公开(公告)号：US20070264423A1
公开(公告)日：2007-11-15
申请号：US11741988
申请日：2007-04-30
申请人： Satoshi MIURA , Takumi UESUGI
发明人： Satoshi MIURA , Takumi UESUGI
IPC分类号： B05D5/12 , B05D1/36 , B05D7/00
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , B82Y40/00 , G01R33/093 , G01R33/098 , G11B5/3163 , G11B5/3912 , H01F10/3254 , H01F41/307
摘要： A manufacturing method of a TMR element having a tunnel barrier layer sandwiched between lower and upper ferromagnetic layers. A fabricating process of the tunnel barrier layer includes a step of depositing a first metallic material film on the lower ferromagnetic layer, a step of oxidizing the deposited first metallic material film using an oxygen gas with a first pressure, a step of depositing a second metallic material film of the same material as that of the first metallic film or of metallic material containing primarily the same material as that of the first metallic film, on the oxidized first metallic film, and a step of oxidizing the deposited second metallic material film using an oxygen gas with a second pressure that is lower than the first pressure.
摘要翻译：具有夹在下铁磁层和上铁磁层之间的隧道势垒层的TMR元件的制造方法。隧道势垒层的制造工艺包括在下铁磁层上沉积第一金属材料膜的步骤，使用第一压力的氧气氧化沉积的第一金属材料膜的步骤，沉积第二金属材料膜的步骤与第一金属膜相同的材料的材料膜或与第一金属膜主要含有相同材料的金属材料在氧化的第一金属膜上的材料膜，以及使用第一金属膜氧化沉积的第二金属膜的步骤具有低于第一压力的第二压力的氧气。

5. 发明申请

US20080121513A1 PROCESSING CONDITION OBTAINING METHOD AND THIN-FILM FORMING METHOD 审中-公开
标题翻译：加工条件获得方法和薄膜成型方法
公开(公告)号：US20080121513A1
公开(公告)日：2008-05-29
申请号：US11680780
申请日：2007-03-01
申请人： Takumi UESUGI , Tetsuro SASAKI , Satoshi MIURA
发明人： Takumi UESUGI , Tetsuro SASAKI , Satoshi MIURA
IPC分类号： C23C14/34 , C23C14/52
CPC分类号： C23C14/545 , C23C14/34
摘要： A processing condition obtaining method obtains a processing condition that makes it possible to form an extremely thin film of a desired thickness. This processing condition obtaining method obtains the processing condition, which shows the relationship between the processing time of a thin-film forming process and the thickness of a thin film formed by such process, by measuring the thickness Ta of a thin film formed by carrying out the thin-film forming process Na times (where Na is a natural number of two or greater) with the processing time set at L seconds (where L is a real number), measuring the thickness Tb of a film formed by carrying out the thin-film forming process Nb times (where Nb is a natural number of two or greater) with the processing time set at M seconds (where M is a real number that differs to L), and obtaining the processing condition with the thickness of a thin film formed by the thin-film forming process with the processing time set at L seconds as Ta/Na and the thickness of a thin film formed by the thin-film forming process with the processing time set at M seconds as Tb/Nb.
摘要翻译：处理条件获得方法获得能够形成期望厚度的极薄膜的处理条件。该处理条件获得方法获得处理条件，该处理条件示出了薄膜形成处理的处理时间与通过这种处理形成的薄膜的厚度之间的关系，通过测量通过执行形成的薄膜的厚度Ta 薄膜形成处理Na（自然数为2以上），处理时间设定为L秒（L为实数），测定通过进行薄膜形成的薄膜的厚度Tb 膜形成处理Nb（其中Nb是2以上的自然数），处理时间设定为M秒（其中M是与L不同的实数），并获得厚度薄的处理条件通过薄膜形成工艺形成的薄膜形成工艺，其处理时间设定为L秒，作为Ta / Na，以及通过薄膜形成工艺形成的薄膜的厚度，处理时间设定为M秒作为Tb / Nb。

6. 发明申请

US20100141302A1 SIGNAL CONVERTING CIRCUIT 有权
标题翻译：信号转换电路
公开(公告)号：US20100141302A1
公开(公告)日：2010-06-10
申请号：US12706412
申请日：2010-02-16
申请人： Satoshi MIURA , Makoto MASUDA
发明人： Satoshi MIURA , Makoto MASUDA
IPC分类号： H03K5/22
CPC分类号： H03F3/45183 , H03F1/223 , H03F3/345 , H03F3/45475 , H03F3/505 , H03F2203/45288 , H03F2203/45352 , H03F2203/45612 , H03F2203/45652 , H03F2203/45702 , H03K17/04106
摘要： A signal conversion circuit 2 comprises a differential amplifier portion 10 and a source follower portion 20. When differential voltage signals INp and INn are input to a first input terminal 5 and second input terminal 6 respectively, operations occurs either in a mode in which only the differential amplifier portion 10 operates, or a mode in which both the differential amplifier portion 10 and the source follower portion 20 operate, or a mode in which only the source follower portion 20 operates, according to the levels of the differential voltage signals INp and INn. The differential amplifier portion 10 and source follower portion 20 have fewer components compared with a circuit comprising two differential amplifier circuits. By this means, the circuit area can be reduced, and in addition current consumption can be reduced. Also, because the source follower portion 20 performs non-inverting amplification of the differential voltage signals INp and INn, high-speed operation is possible.
摘要翻译：信号转换电路2包括差分放大器部分10和源极跟随器部分20.当差分电压信号INp和INn分别输入到第一输入端子5和第二输入端子6时，操作发生在只有差分放大器部分10或者差分放大器部分10和源极跟随器部分20工作的模式或仅源极跟随器部分20工作的模式，根据差分电压信号INp和INn的电平。与包括两个差分放大器电路的电路相比，差分放大器部分10和源极跟随器部分20具有较少的部件。通过这种方式，可以减少电路面积，并且可以减少电流消耗。此外，由于源极跟随器部分20执行差分电压信号INp和INn的非反相放大，因此可以进行高速操作。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式