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1. 发明授权

US5723235A Method of producing photomask and exposing 失效
公开(公告)号：US5723235A
公开(公告)日：1998-03-03
申请号：US648665
申请日：1996-05-16
申请人： Keisuke Tsudaka , Minoru Sugawara
发明人： Keisuke Tsudaka , Minoru Sugawara
IPC分类号： G03F1/68 , G03F1/70 , G03F7/20 , G03F9/02 , H01L21/027 , G03F9/00
CPC分类号： G03F7/705 , G03F1/26 , G03F7/70333 , G03F7/70433 , G03F7/70558 , G03F7/70625 , G03F7/70641 , G03F1/144 , G03F1/32
摘要： A photomask, a method of producing the same, a method of exposing using the same and a method of manufacturing a semiconductor device using the same are disclosed, which permit correlation to be found out with respect to a large number of mask condition parameters, thus permitting optimum condition to be obtained such as to be less aloof from the actual process, permits quantitative grasping of performance, permits reduction of time and cost, and permits effects of mask pattern size fluctuations, etc. into considerations. Either defocus latitude, mask pattern size latitude II and exposure latitude I is combined with pluralities of data in predetermined ranges of the other two latitudes I and II to determine the permissible range of the first-noted latitude III for optimum value determination.

2. 发明授权

US5558963A Method of producing photomask and exposing 失效
标题翻译：制造光掩模和曝光的方法
公开(公告)号：US5558963A
公开(公告)日：1996-09-24
申请号：US336656
申请日：1994-11-04
申请人： Keisuke Tsudaka , Minoru Sugawara
发明人： Keisuke Tsudaka , Minoru Sugawara
IPC分类号： G03F1/68 , G03F1/70 , G03F7/20 , G03F9/02 , H01L21/027 , G03F9/00
CPC分类号： G03F7/705 , G03F1/26 , G03F7/70333 , G03F7/70433 , G03F7/70558 , G03F7/70625 , G03F7/70641 , G03F1/144 , G03F1/32
摘要： A photomask, a method of producing the same, a method of exposing using the same and a method of manufacturing a semiconductor device using the same are disclosed, which permit correlation to be found out with respect to a large number of mask condition parameters, thus permitting optimum condition to be obtained such as to be less aloof from the actual process, permits quantitative grasping of performance, permits reduction of time and cost, and permits effects of mask pattern size fluctuations, etc. into considerations.Either defocus latitude, mask pattern size latitude II and exposure latitude I is combined with pluralities of data in predetermined ranges of the other two latitudes I and II to determine the permissible range of the first-noted latitude III for optimum value determination.
摘要翻译：公开了一种光掩模，其制造方法，使用其的曝光方法和使用其的半导体器件的制造方法，其允许针对大量掩模条件参数找出相关性，因此允许获得最佳条件，使得不再偏离实际过程，允许定期掌握性能，允许减少时间和成本，并且允许考虑到掩模图案尺寸波动等的影响。散焦纬度，掩模图案尺寸纬度II和曝光宽容度I与另外两个纬度I和II的预定范围内的多个数据组合，以确定用于最佳值确定的第一纬度III的允许范围。

3. 发明授权

US5991006A Method and apparatus for correcting exposure patterns, and exposure mask, method of exposing and semiconductor device 失效
标题翻译：用于校正曝光图案的方法和装置，以及曝光掩模，曝光方法和半导体器件
公开(公告)号：US5991006A
公开(公告)日：1999-11-23
申请号：US957925
申请日：1997-10-27
申请人： Keisuke Tsudaka
发明人： Keisuke Tsudaka
IPC分类号： G03F1/36 , G03F1/72 , G03F7/20 , H01L21/027 , G03B27/42 , G03F9/00
CPC分类号： G03F1/36 , G03F7/70433 , G03F7/70441 , G03F7/705
摘要： A method of transforming the exposure pattern is provided so as to obtain a transferred image as being closest possible to the object design pattern in a lithography process. The method includes the steps of dividing a visible outline of desired design pattern P into a plurality of edges according to a specified rule, then assigning a plurality of evaluation points H to each of the edges; computing a transferred image of an exposed pattern by simulation; computing a distance between each evaluation point H on each edge E and a position corresponding to each evaluation point H of the transferred image of the exposed pattern; and determining a corrected exposure pattern by inputting the distance to a specified evaluation function to correct the position of each edge E according to the output value of the evaluation function.
摘要翻译：提供变换曝光图案的方法，以获得在光刻工艺中最接近对象设计图案的转印图像。该方法包括以下步骤：根据指定的规则将期望的设计图案P的可视轮廓划分成多个边缘，然后将多个评估点H分配给每个边缘; 通过模拟计算曝光图案的转印图像; 计算每个边缘E上的每个评估点H之间的距离和对应于曝光图案的传送图像的每个评估点H的位置; 以及通过将所述距离输入到指定的评估函数来确定校正的曝光图案，以根据所述评估功能的输出值来校正每个边缘E的位置。

4. 发明授权

US6042257A Correction method and correction apparatus of mask pattern 有权
公开(公告)号：US6042257A
公开(公告)日：2000-03-28
申请号：US137231
申请日：1998-08-20
申请人： Keisuke Tsudaka
发明人： Keisuke Tsudaka
IPC分类号： G03F1/00 , G03F1/36 , G03F1/72 , G03F7/20 , H01L21/027 , G06F19/00
CPC分类号： G03F1/36 , G03F7/70433 , G03F7/705
摘要： A method of correction of a mask pattern in which the mask pattern of a photomask to be used in a photolithographic step is deformed so that a transfer image near a desired design pattern is obtained, including an evaluation point arrangement step for arranging a plurality of evaluation points along an outer periphery of the desired design pattern; a simulation step for simulating the transfer image to be obtained where exposure is carried out under predetermined transfer conditions by using a photomask of a design pattern given the evaluation points; a comparison step for comparing a difference between the simulated transfer image and the design pattern for every evaluation point; and a deformation step for deforming the design pattern according to the difference compared for every evaluation point so that the difference becomes smaller and a correction apparatus for the same.

5. 发明授权

US5825647A Correction method and correction apparatus of mask pattern 失效
公开(公告)号：US5825647A
公开(公告)日：1998-10-20
申请号：US614313
申请日：1996-03-12
申请人： Keisuke Tsudaka
发明人： Keisuke Tsudaka
IPC分类号： G03F1/00 , G03F1/36 , G03F1/72 , G03F7/20 , H01L21/027 , G06F19/00 , G06F15/00
CPC分类号： G03F1/36 , G03F7/70433 , G03F7/705
摘要： A method of correction of a mask pattern in which the mask pattern of a photomask to be used in a photolithographic step is deformed so that a transfer image near a desired design pattern is obtained, including an evaluation point arrangement step for arranging a plurality of evaluation points along an outer periphery of the desired design pattern; a simulation step for simulating the transfer image to be obtained where exposure is carried out under predetermined transfer conditions by using a photomask of a design pattern given the evaluation points; a comparison step for comparing a difference between the simulated transfer image and the design pattern for every evaluation point; and a deformation step for deforming the design pattern according to the difference compared for every evaluation point so that the difference becomes smaller and a correction apparatus for the same.

6. 发明授权

US06249597B1 Method of correcting mask pattern and mask, method of exposure, apparatus thereof, and photomask and semiconductor device using the same 有权
标题翻译：掩模图案和掩模的校正方法，曝光方法，其装置以及使用其的光掩模和半导体器件
公开(公告)号：US06249597B1
公开(公告)日：2001-06-19
申请号：US09213227
申请日：1998-12-17
申请人： Keisuke Tsudaka
发明人： Keisuke Tsudaka
IPC分类号： G06K900
CPC分类号： G03F7/70433 , G03F1/72 , G03F7/70441 , Y10T428/24802
摘要： A method of correcting a mask pattern wherein the mask pattern of a photomask used in a photolithography process is made to deform so as to give a transfer image close to a desired design pattern. The method including: an evaluation point arranging step for arranging a plurality of evaluation points along the outer periphery of the desired design pattern, a simulation step for simulating a transfer image obtained at exposure under predetermined transfer conditions using a photomask of a design pattern with evaluation points, a comparison step for comparing for each evaluation point the difference between the simulated transfer image and the design pattern, and a deformation step for deforming the design pattern in accordance with the differences compared for each evaluation point so that the differences become smaller. In the evaluation point arranging step, for example, the evaluation points are arranged at the corners of the desired design pattern and arranging the evaluation points at predetermined intervals at the sides of the pattern.
摘要翻译：一种校正掩模图案的方法，其中使光刻工艺中使用的光掩模的掩模图案变形以使得转印图像接近期望的设计图案。该方法包括：评估点布置步骤，用于沿着期望的设计图案的外周布置多个评估点;模拟步骤，用于模拟在预定转印条件下曝光时获得的转印图像，使用具有评估的设计图案的光掩模点，用于比较每个评估点的模拟转印图像和设计图案之间的差异的比较步骤，以及根据每个评估点比较的差异使设计图案变形的变形步骤，使得差异变小。在评价点配置步骤中，例如将评价点配置在期望的设计图案的角部，并且在图案的侧面以规定间隔配置评价点。

7. 发明授权

US6154563A Method of correcting mask pattern and mask, method of exposure, apparatus thereof, and photomask and semiconductor device using the same 有权
标题翻译：掩模图案和掩模的校正方法，曝光方法，其装置以及使用其的光掩模和半导体器件
公开(公告)号：US6154563A
公开(公告)日：2000-11-28
申请号：US213755
申请日：1998-12-17
申请人： Keisuke Tsudaka
发明人： Keisuke Tsudaka
IPC分类号： G03F1/00 , G03F1/36 , G03F1/68 , G03F1/70 , G03F7/20 , G06F17/50 , H01L21/027 , G06K9/00
CPC分类号： G03F7/70433 , G03F1/72 , G03F7/70441 , Y10T428/24802
摘要： A method of correcting a mask pattern wherein the mask pattern of a photomask used in a photolithography process is made to deform so as to give a transfer image close to a desired design pattern. The method including: an evaluation point arranging step for arranging a plurality of evaluation points along the outer periphery of the desired design pattern, a simulation step for simulating a transfer image obtained at exposure under predetermined transfer conditions using a photomask of a design pattern with evaluation points, a comparison step for comparing for each evaluation point the difference between the simulated transfer image and the design pattern, and a deformation step for deforming the design pattern in accordance with the differences compared for each evaluation point so that the differences become smaller. In the evaluation point arranging step, for example, the evaluation points are arranged at the corners of the desired design pattern and arranging the evaluation points at predetermined intervals at the sides of the pattern.
摘要翻译：一种校正掩模图案的方法，其中使光刻工艺中使用的光掩模的掩模图案变形以使得转印图像接近期望的设计图案。该方法包括：评估点布置步骤，用于沿着期望的设计图案的外周布置多个评估点;模拟步骤，用于模拟在预定转印条件下曝光时获得的转印图像，使用具有评估的设计图案的光掩模点，用于比较每个评估点的模拟转印图像和设计图案之间的差异的比较步骤，以及根据每个评估点比较的差异使设计图案变形的变形步骤，使得差异变小。在评价点配置步骤中，例如将评价点配置在期望的设计图案的角部，并且在图案的侧面以规定间隔配置评价点。

8. 发明授权

US6067375A Correction method and correction apparatus of mask pattern 有权
标题翻译：掩模图案的校正方法和校正装置
公开(公告)号：US6067375A
公开(公告)日：2000-05-23
申请号：US137205
申请日：1998-08-20
申请人： Keisuke Tsudaka
发明人： Keisuke Tsudaka
IPC分类号： G03F1/00 , G03F1/36 , G03F1/72 , G03F7/20 , H01L21/027 , G06K9/00 , G03B27/42 , G03B27/52 , G03F9/00 , G06F19/00
CPC分类号： G03F1/36 , G03F7/70433 , G03F7/705
摘要： A method of correction of a mask pattern in which the mask pattern of a photomask to be used in a photolithographic step is deformed so that a transfer image near a desired design pattern is obtained, including an evaluation point arrangement step for arranging a plurality of evaluation points along an outer periphery of the desired design pattern; a simulation step for simulating the transfer image to be obtained where exposure is carried out under predetermined transfer conditions by using a photomask of a design pattern given the evaluation points; a comparison step for comparing a difference between the simulated transfer image and the design pattern for every evaluation point; and a deformation step for deforming the design pattern according to the difference compared for every evaluation point so that the difference becomes smaller and a correction apparatus for the same.
摘要翻译：一种掩模图案的校正方法，其中在光刻步骤中使用的光掩模的掩模图案变形，从而获得接近所需设计图案的转印图像，包括用于布置多个评估的评估点布置步骤沿所需设计图案的外周点; 模拟步骤，用于模拟通过使用给定评估点的设计图案的光掩模在预定转印条件下进行曝光而获得的转印图像; 用于比较每个评估点的模拟转印图像和设计图案之间的差异的比较步骤; 以及变形步骤，用于根据针对每个评估点的差异使设计图案变形，使得差值变小，以及用于其的校正装置。

9. 发明授权

US6058203A Correction method and correction apparatus of mask pattern 有权
公开(公告)号：US6058203A
公开(公告)日：2000-05-02
申请号：US137157
申请日：1998-08-20
申请人： Keisuke Tsudaka
发明人： Keisuke Tsudaka
IPC分类号： G03F1/00 , G03F1/36 , G03F1/72 , G03F7/20 , H01L21/027 , G06K9/00 , G03B27/42 , G03B27/52 , G06F9/00 , G06F19/00
CPC分类号： G03F1/36 , G03F7/70433 , G03F7/705
摘要： A method of correction of a mask pattern in which the mask pattern of a photomask to be used in a photolithographic step is deformed so that a transfer image near a desired design pattern is obtained, including an evaluation point arrangement step for arranging a plurality of evaluation points along an outer periphery of the desired design pattern; a simulation step for simulating the transfer image to be obtained where exposure is carried out under predetermined transfer conditions by using a photomask of a design pattern given the evaluation points; a comparison step for comparing a difference between the simulated transfer image and the design pattern for every evaluation point; and a deformation step for deforming the design pattern according to the difference compared for every evaluation point so that the difference becomes smaller and a correction apparatus for the same.

10. 发明授权

US6014456A Method of correcting mask pattern and mask, method of exposure, apparatus thereof, and photomask and semiconductor device using the same 失效
标题翻译：掩模图案和掩模的校正方法，曝光方法，其装置以及使用其的光掩模和半导体器件
公开(公告)号：US6014456A
公开(公告)日：2000-01-11
申请号：US679776
申请日：1996-07-15
申请人： Keisuke Tsudaka
发明人： Keisuke Tsudaka
IPC分类号： G03F1/00 , G03F1/36 , G03F1/68 , G03F1/70 , G03F7/20 , G06F17/50 , H01L21/027 , G06K9/00
CPC分类号： G03F7/70433 , G03F1/72 , G03F7/70441 , Y10T428/24802
摘要： A method of correcting a mask pattern of a photo-mask used in a photo-lithographic process includes deforming the mask pattern to account for distortions in the pattern that will be caused during projection of the pattern by the photo-lithographic equipment so that the pattern image as transferred by the equipment matches a desired design pattern despite the distortions caused by the equipment. The method includes the steps of simulating a transfer image obtained by projecting a mask pattern through the exposure equipment under predetermined transfer conditions; arranging evaluation points on the transfer image; comparing the evaluation points of the simulated transfer image with the desired design pattern; and deforming the initial mask pattern in accordance with the differences between the simulated transfer image and the desired pattern. The method may also include repeating the foregoing steps to decrease the differences between the transfer pattern and the desired pattern. The evaluation points are arranged at corners and at predetermined intervals along the sides of the transfer pattern.
摘要翻译：校正光刻工艺中使用的光掩模的掩模图案的方法包括使掩模图案变形以解决由光刻设备在图案投影期间将引起的图案中的失真，使得图案由设备传送的图像与所需的设计图案相匹配，尽管设备造成了扭曲。该方法包括以下步骤：模拟通过在预定转印条件下通过曝光设备投影掩模图案获得的转印图像; 在转印图像上安排评估点; 将模拟转印图像的评估点与期望的设计图案进行比较; 以及根据模拟转印图像和期望图案之间的差异使初始掩模图案变形。该方法还可以包括重复上述步骤以减少转印图案和期望图案之间的差异。评价点沿着转印图案的边缘以角度和预定间隔布置。

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