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1. 发明申请

US20050141579A1 Semiconductor laser and method for fabricating the same 审中-公开
标题翻译：半导体激光器及其制造方法
公开(公告)号：US20050141579A1
公开(公告)日：2005-06-30
申请号：US10980651
申请日：2004-11-04
申请人： Keiji Yamane , Masahiro Kume , Toshiya Kawata , Isao Kidoguchi
发明人： Keiji Yamane , Masahiro Kume , Toshiya Kawata , Isao Kidoguchi
IPC分类号： H01L21/50 , H01S5/00 , H01S5/02 , H01S5/022 , H01S5/042 , H01S5/223
CPC分类号： H01S5/0425 , H01S5/0021 , H01S5/02272 , H01S5/2231 , H01S2301/14
摘要： A semiconductor laser includes an n-type semiconductor substrate, an n-type clad layer, an active layer, a p-type first clad layer, a current blocking layer, a p-type second clad layer and a p-type contact layer stacked in this order form the bottom. A p-side ohmic electrode is formed on the p-type contact layer and an n-side ohmic electrode is formed on a back surface of the n-type semiconductor substrate. A stripe is formed in the current blocking layer so as to extend in the optical oscillator direction. In a center portion of the p-type contact layer, a slit is formed so as to extend in the optical oscillator direction and intersect with the stripe with right angles.
摘要翻译：半导体激光器包括n型半导体衬底，n型覆盖层，有源层，p型第一覆盖层，电流阻挡层，p型第二覆盖层和p型接触层堆叠以此顺序形成底部。在p型接触层上形成p侧欧姆电极，在n型半导体衬底的背面上形成n侧欧姆电极。在电流阻挡层中形成条带，以沿光学振荡器方向延伸。在p型接触层的中心部分，形成狭缝，以便在光学振荡器方向上延伸并且与条纹成直角相交。

2. 发明授权

US07442628B2 Semiconductor laser manufacturing method 有权
标题翻译：半导体激光制造方法
公开(公告)号：US07442628B2
公开(公告)日：2008-10-28
申请号：US11706343
申请日：2007-02-15
申请人： Keiji Yamane , Tetsuo Ueda , Isao Kidoguchi , Toshiya Kawata
发明人： Keiji Yamane , Tetsuo Ueda , Isao Kidoguchi , Toshiya Kawata
IPC分类号： H01L21/00
CPC分类号： B82Y20/00 , H01S5/0202 , H01S5/028 , H01S5/0287 , H01S5/168 , H01S5/2206 , H01S5/2214 , H01S5/2231 , H01S5/34333
摘要： A method for manufacturing a semiconductor laser. As a preparative step for coating an end face of a resonator with a dielectric film, a cleavage plane of a semiconductor laminated structure that is to be the end face is subjected to a plasma cleaning to prevent a conductive film, which absorbs laser light, from attaching to the cleavage plane. During the plasma cleaning, a first process gas containing argon gas and nitrogen gas is introduced into a vacuumed ECR sputtering apparatus. After the cleavage plane is exposed to the first process gas in the plasma state for a certain time period without application of a voltage, a second process gas containing argon gas and oxygen gas is introduced, and the cleavage plane is exposed to the second process gas in the plasma state while a voltage is applied to the silicon target.
摘要翻译：一种半导体激光器的制造方法。作为用电介质膜涂覆谐振器的端面的制备步骤，将作为端面的半导体层叠结构的解理面进行等离子体清洗，以防止吸收激光的导电膜附着于解理面。在等离子体清洗期间，将含有氩气和氮气的第一工艺气体引入真空的ECR溅射装置中。在不施加电压的情况下，在等离子体状态下将解理面暴露于等离子体状态的第一工艺气体一定时间后，引入含有氩气和氧气的第二工艺气体，并将解理面暴露于第二工艺气体处于等离子体状态，同时向硅靶施加电压。

3. 发明申请

US20070298528A1 Semiconductor laser manufacturing method 有权
公开(公告)号：US20070298528A1
公开(公告)日：2007-12-27
申请号：US11706343
申请日：2007-02-15
申请人： Keiji Yamane , Tetsuo Ueda , Isao Kidoguchi , Toshiya Kawata
发明人： Keiji Yamane , Tetsuo Ueda , Isao Kidoguchi , Toshiya Kawata
IPC分类号： H01L21/00
CPC分类号： B82Y20/00 , H01S5/0202 , H01S5/028 , H01S5/0287 , H01S5/168 , H01S5/2206 , H01S5/2214 , H01S5/2231 , H01S5/34333
摘要： A method for manufacturing a semiconductor laser. As a preparative step for coating an end face of a resonator with a dielectric film, a cleavage plane of a semiconductor laminated structure that is to be the end face is subjected to a plasma cleaning to prevent a conductive film, which absorbs laser light, from attaching to the cleavage plane. During the plasma cleaning, a first process gas containing argon gas and nitrogen gas is introduced into a vacuumed ECR sputtering apparatus. After the cleavage plane is exposed to the first process gas in the plasma state for a certain time period without application of a voltage, a second process gas containing argon gas and oxygen gas is introduced, and the cleavage plane is exposed to the second process gas in the plasma state while a voltage is applied to the silicon target.

4. 发明申请

US20050232325A1 Semiconductor laser 有权
标题翻译：半导体激光器
公开(公告)号：US20050232325A1
公开(公告)日：2005-10-20
申请号：US11070267
申请日：2005-03-03
申请人： Tetsuo Ueda , Masahiro Kume , Toshiya Kawata , Isao Kidoguchi
发明人： Tetsuo Ueda , Masahiro Kume , Toshiya Kawata , Isao Kidoguchi
IPC分类号： H01S5/227 , H01S5/00 , H01S5/02 , H01S5/10 , H01S5/16 , H01S5/20 , H01S5/22 , H01S5/223 , H01S5/343 , H01S5/40
CPC分类号： B82Y20/00 , H01S5/1039 , H01S5/162 , H01S5/168 , H01S5/2214 , H01S5/2231 , H01S5/34333 , H01S5/4031 , H01S5/4087 , H01S2301/18
摘要： In a semiconductor laser 1, a current blocking layer 19 covers a p-type 2nd cladding layer 17 and a p-type cap layer 18 that extend in a lengthwise direction of an optical resonator, at both a light-emission end and an end opposite the light-emission end, to thus form non-current injection regions in an optical waveguide. By making current blocking layer 19 at the light-emission end large enough that carriers flowing from a current injection region do not reach the light-emission end surface, the light intensity distribution in the near field at the light-emission end surface is strongly concentrated, allowing the horizontal divergence angle of an emerging laser beam to be enlarged. This structure makes it possible to enlarge the horizontal divergence angle independently after having optimized the thickness of cladding layers and the size of the current injection region.
摘要翻译：在半导体激光器1中，电流阻挡层19覆盖在光谐振器的长度方向上延伸的p型2层包层17和p型覆盖层18，发光端和与发光端相对的端部，从而在光波导中形成非电流注入区域。通过使发光端处的电流阻挡层19足够大，使得从电流注入区域流动的载流子未到达发光端面，发光端面处的近场中的光强度分布被强烈集中允许出现的激光束的水平发散角被扩大。这种结构使得可以在优化包覆层的厚度和电流注入区域的尺寸之后独立地扩大水平发散角。

5. 发明授权

US07192851B2 Semiconductor laser manufacturing method 有权
标题翻译：半导体激光制造方法
公开(公告)号：US07192851B2
公开(公告)日：2007-03-20
申请号：US10931206
申请日：2004-09-01
申请人： Keiji Yamane , Tetsuo Ueda , Isao Kidoguchi , Toshiya Kawata
发明人： Keiji Yamane , Tetsuo Ueda , Isao Kidoguchi , Toshiya Kawata
IPC分类号： H01L21/00
CPC分类号： B82Y20/00 , H01S5/0202 , H01S5/028 , H01S5/0287 , H01S5/168 , H01S5/2206 , H01S5/2214 , H01S5/2231 , H01S5/34333
摘要： A method for manufacturing a semiconductor laser. As a preparative step for coating an end face of a resonator with a dielectric film, a cleavage plane of a semiconductor laminated structure that is to be the end face is subjected to a plasma cleaning to prevent a conductive film, which absorbs laser light, from attaching to the cleavage plane. During the plasma cleaning, a first process gas containing argon gas and nitrogen gas is introduced into a vacuumed ECR sputtering apparatus. After the cleavage plane is exposed to the first process gas in the plasma state for a certain time period without application of a voltage, a second process gas containing argon gas and oxygen gas is introduced, and the cleavage plane is exposed to the second process gas in the plasma state while a voltage is applied to the silicon target.
摘要翻译：一种半导体激光器的制造方法。作为用电介质膜涂覆谐振器的端面的制备步骤，将作为端面的半导体层叠结构的解理面进行等离子体清洗，以防止吸收激光的导电膜附着于解理面。在等离子体清洗期间，将含有氩气和氮气的第一工艺气体引入真空的ECR溅射装置中。在不施加电压的情况下，在等离子体状态下将解理面暴露于等离子体状态的第一工艺气体一定时间后，引入含有氩气和氧气的第二工艺气体，并将解理面暴露于第二工艺气体处于等离子体状态，同时向硅靶施加电压。

6. 发明申请

US20050059181A1 Semiconductor laser manufacturing method 有权
标题翻译：半导体激光制造方法
公开(公告)号：US20050059181A1
公开(公告)日：2005-03-17
申请号：US10931206
申请日：2004-09-01
申请人： Keiji Yamane , Tetsuo Ueda , Isao Kidoguchi , Toshiya Kawata
发明人： Keiji Yamane , Tetsuo Ueda , Isao Kidoguchi , Toshiya Kawata
IPC分类号： H01S5/028 , H01L21/00 , H01L21/26 , H01L21/42 , H01S5/00 , H01S5/02 , H01S5/16 , H01S5/22 , H01S5/223 , H01S5/343
CPC分类号： B82Y20/00 , H01S5/0202 , H01S5/028 , H01S5/0287 , H01S5/168 , H01S5/2206 , H01S5/2214 , H01S5/2231 , H01S5/34333
摘要： A method for manufacturing a semiconductor laser. As a preparative step for coating an end face of a resonator with a dielectric film, a cleavage plane of a semiconductor laminated structure that is to be the end face is subjected to a plasma cleaning to prevent a conductive film, which absorbs laser light, from attaching to the cleavage plane. During the plasma cleaning, a first process gas containing argon gas and nitrogen gas is introduced into a vacuumed ECR sputtering apparatus. After the cleavage plane is exposed to the first process gas in the plasma state for a certain time period without application of a voltage, a second process gas containing argon gas and oxygen gas is introduced, and the cleavage plane is exposed to the second process gas in the plasma state while a voltage is applied to the silicon target.
摘要翻译：一种半导体激光器的制造方法。作为用电介质膜涂覆谐振器的端面的制备步骤，将作为端面的半导体叠层结构的解理面进行等离子体清洗，以防止吸收激光的导电膜附着于解理面。在等离子体清洗期间，将含有氩气和氮气的第一工艺气体引入真空的ECR溅射装置中。在不施加电压的情况下，在等离子体状态下将解理面暴露于等离子体状态的第一工艺气体一定时间后，引入含有氩气和氧气的第二工艺气体，并将解理面暴露于第二工艺气体处于等离子体状态，同时向硅靶施加电压。

7. 发明申请

US20060176921A1 Semiconductor laser device 审中-公开
标题翻译：半导体激光器件
公开(公告)号：US20060176921A1
公开(公告)日：2006-08-10
申请号：US11335828
申请日：2006-01-20
申请人： Tetsuo Ueda , Masahiro Kume , Toshiya Kawata , Isao Kidoguchi
发明人： Tetsuo Ueda , Masahiro Kume , Toshiya Kawata , Isao Kidoguchi
IPC分类号： H01S5/00
CPC分类号： B82Y20/00 , H01S5/162 , H01S5/168 , H01S5/221 , H01S5/2231 , H01S5/305 , H01S5/3054 , H01S5/32341 , H01S5/34326 , H01S5/3436 , H01S5/4031 , H01S5/4087 , H01S2301/185
摘要： To provide a semiconductor laser device for which a horizontal divergence angle of a laser beam can be improved independently of optimization of other properties such as a cladding layer thickness and a current injected region size. A current blocking layer covers a larger area of a p-type second cladding layer and p-type cap layer extending in a resonator length direction, on a light emitting end face side than on an opposite end face side. Thus, current uninjected regions are formed in an optical waveguide. The current blocking layer (current uninjected region) on the light emitting end face side is set long enough to prevent carriers, which flow in from a current injected region, from reaching alight emitting end face. In this way, a light intensity distribution of a near-field pattern on the light emitting end face is concentrated, thereby increasing a horizontal divergence angle of a laser beam.
摘要翻译：提供一种半导体激光器件，其可以独立于诸如包层厚度和电流注入区域尺寸等其他性能的优化而提高激光束的水平发散角。电流阻挡层覆盖在发光端面侧上比在相对端面侧上在谐振器长度方向上延伸的p型第二覆层和p型覆盖层的较大面积。因此，在光波导中形成电流未被注入的区域。发光端面侧的电流阻挡层（电流未注入区）被设定得足够长以防止从电流注入区流入的载流子到达发光端面。以这种方式，发光端面上的近场图案的光强度分布集中，从而增加激光束的水平发散角。

8. 发明授权

US07197055B2 Semiconductor laser 有权
标题翻译：半导体激光器
公开(公告)号：US07197055B2
公开(公告)日：2007-03-27
申请号：US11070267
申请日：2005-03-03
申请人： Tetsuo Ueda , Masahiro Kume , Toshiya Kawata , Isao Kidoguchi
发明人： Tetsuo Ueda , Masahiro Kume , Toshiya Kawata , Isao Kidoguchi
IPC分类号： H01S5/00
CPC分类号： B82Y20/00 , H01S5/1039 , H01S5/162 , H01S5/168 , H01S5/2214 , H01S5/2231 , H01S5/34333 , H01S5/4031 , H01S5/4087 , H01S2301/18
摘要： In a semiconductor laser 1, a current blocking layer 19 covers a p-type 2nd cladding layer 17 and a p-type cap layer 18 that extend in a lengthwise direction of an optical resonator, at both a light-emission end and an end opposite the light-emission end, to thus form non-current injection regions in an optical waveguide. By making current blocking layer 19 at the light-emission end large enough that carriers flowing from a current injection region do not reach the light-emission end surface, the light intensity distribution in the near field at the light-emission end surface is strongly concentrated, allowing the horizontal divergence angle of an emerging laser beam to be enlarged. This structure makes it possible to enlarge the horizontal divergence angle independently after having optimized the thickness of cladding layers and the size of the current injection region.
摘要翻译：在半导体激光器1中，电流阻挡层19覆盖在光谐振器的长度方向上延伸的p型2层包层17和p型覆盖层18，发光端和与发光端相对的端部，从而在光波导中形成非电流注入区域。通过使发光端处的电流阻挡层19足够大，使得从电流注入区域流动的载流子未到达发光端面，发光端面处的近场中的光强度分布被强烈集中允许出现的激光束的水平发散角被扩大。这种结构使得可以在优化包覆层的厚度和电流注入区域的尺寸之后独立地扩大水平发散角。

9. 发明申请

US20070246829A1 Semiconductor device and method for producing the same 审中-公开
标题翻译：半导体装置及其制造方法
公开(公告)号：US20070246829A1
公开(公告)日：2007-10-25
申请号：US11820917
申请日：2007-06-21
申请人： Keiji Yamane , Tetsuo Ueda , Takashi Miyamoto , Isao Kidoguchi
发明人： Keiji Yamane , Tetsuo Ueda , Takashi Miyamoto , Isao Kidoguchi
IPC分类号： H01L23/52
CPC分类号： H01L24/83 , H01L24/29 , H01L2224/291 , H01L2224/29109 , H01L2224/29111 , H01L2224/29118 , H01L2224/29144 , H01L2224/29147 , H01L2224/8319 , H01L2224/838 , H01L2224/83805 , H01L2924/01006 , H01L2924/01024 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01042 , H01L2924/01047 , H01L2924/0105 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/01322 , H01L2924/0133 , H01L2924/014 , H01L2924/10329 , H01L2924/12042 , H01L2924/1579 , H01L2924/351 , H01S5/0014 , H01S5/0224 , H01S5/02272 , H01S5/02476 , H01S5/0425 , H01S5/32341 , H01L2924/01014 , H01L2924/00 , H01L2924/01032 , H01L2924/01028 , H01L2924/01049 , H01L2924/01051 , H01L2924/00014 , H01L2924/00012
摘要： A method for producing a semiconductor device of the present invention includes forming a surface electrode on a semiconductor element, forming a solder layer by plating on one principal surface of the surface electrode, mounting the semiconductor element on the sub-mount so that the solder layer contacts a principal surface of the sub-mount, and bonding the sub-mount and the semiconductor element to each other via the solder layer.
摘要翻译：本发明的半导体装置的制造方法包括在半导体元件上形成表面电极，通过电镀在所述表面电极的一个主面上形成焊料层，将所述半导体元件安装在所述副安装座上，使得所述焊料层接触子座的主表面，并且通过焊料层将子座和半导体元件彼此接合。

10. 发明授权

US07142576B2 Semiconductor laser 有权
标题翻译：半导体激光器
公开(公告)号：US07142576B2
公开(公告)日：2006-11-28
申请号：US11198089
申请日：2005-08-05
申请人： Tetsuo Ueda , Keiji Yamane , Isao Kidoguchi , Shoji Fujimori
发明人： Tetsuo Ueda , Keiji Yamane , Isao Kidoguchi , Shoji Fujimori
IPC分类号： H01S5/00
CPC分类号： H01S5/028
摘要： A semiconductor laser includes an active layer formed on a substrate and a pair of cladding layers sandwiching the active layer. On at least one of resonator end faces of the semiconductor laser, a first dielectric film with hydrogen added therein is provided. Between the first dielectric film and the resonator end face, a second dielectric film for suppressing the diffusion of hydrogen is provided. Even when a semiconductor laser with an end face coating film including a hydrogen-added film is exposed to high temperatures, peeling of the end face coating film and deterioration of the end face coating film can be suppressed.
摘要翻译：半导体激光器包括形成在基板上的有源层和夹着有源层的一对包覆层。在半导体激光器的至少一个谐振器端面上，提供了其中添加有氢的第一电介质膜。在第一电介质膜和谐振器端面之间，提供了用于抑制氢的扩散的第二电介质膜。即使当具有包含加氢膜的端面涂膜的半导体激光器暴露于高温时，也可以抑制端面涂膜的剥离和端面涂膜的劣化。

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