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    • 7. 发明授权
    • Process for production of semiconductor device and resist developing
apparatus used therein
    • 用于制造半导体器件和抗蚀剂显影装置的方法
    • US5783367A
    • 1998-07-21
    • US379025
    • 1995-01-27
    • Takashi MaruyamaTatsuo ChijimatsuKoichi KobayashiKeiko YanoHiroyuki Kanata
    • Takashi MaruyamaTatsuo ChijimatsuKoichi KobayashiKeiko YanoHiroyuki Kanata
    • G03F7/30
    • G03F7/30G03F7/3021Y10S134/902
    • In the production of semiconductor devices, a pattern-wise exposed resist coating is developed with a developer to form a resist pattern corresponding to the pattern of exposure radiation on an article to be fabricated. The development being carried out with a developer consisting of one or more organic solvents, in at least two stages and in each stage of the development, the development is interrupted when a substantial permeation of the developer of a surface portion of the pattern-forming area of the resist pattern in which the resist pattern remains is completed, and the developed resist coating is dried between this stage and the following development stages. The development of the exposed resist coating is carried out by using a developing apparatus which comprises at least one set of developer-supplying system and rinsing solution-supplying system, and a conveyor means for guiding the article carrying the resist coating.
    • 在制造半导体器件时,用显影剂显影图案曝光的抗蚀剂涂层,以形成对应于要制造的制品上的曝光辐射图案的抗蚀剂图案。 在一个由一种或多种有机溶剂组成的显影剂的显影中,至少在两个阶段和在显影的每一个阶段中进行显影,当图形形成区域的表面部分的显影剂的显着渗透 其中抗蚀剂图案保留的抗蚀剂图案完成,并且显影的抗蚀剂涂层在该阶段和随后的显影阶段之间被干燥。 曝光的抗蚀剂涂层的开发通过使用包括至少一组显影剂供应系统和冲洗溶液供应系统的显影装置和用于引导携带抗蚀剂涂层的物品的输送装置来进行。
    • 8. 发明授权
    • Resist developing apparatus used in process for production of
semiconductor device
    • 用于制造半导体器件的抗蚀剂显影装置
    • US6033134A
    • 2000-03-07
    • US38105
    • 1998-03-11
    • Takashi MaruyamaTatsuo ChijimatsuKoichi KobayashiKeiko YanoHiroyuki Kanata
    • Takashi MaruyamaTatsuo ChijimatsuKoichi KobayashiKeiko YanoHiroyuki Kanata
    • G03F7/30G03D5/00
    • G03F7/30G03F7/3021Y10S134/902
    • In the production of semiconductor devices, a pattern-wise exposed resist coating is developed with a developer to form a resist pattern corresponding to the pattern of exposure radiation on an article to be fabricated. The development being carried out with a developer consisting of one or more organic solvents, in at least two stages and in each stage of the development, the development is interrupted when a substantial permeation of the developer of a surface portion of the pattern-forming area of the resist pattern in which the resist pattern remains is completed, and the developed resist coating is dried between this stage and the following development stages. The development of the exposed resist coating is carried out by using a developing apparatus which comprises at least one set of developer-supplying system and rinsing solution-supplying system, and a conveyor means for guiding the article carrying the resist coating.
    • 在制造半导体器件时,用显影剂显影图案曝光的抗蚀剂涂层,以形成对应于要制造的制品上的曝光辐射图案的抗蚀剂图案。 在一个由一种或多种有机溶剂组成的显影剂的显影中,至少在两个阶段和在显影的每个阶段中进行显影,当图案形成区域的表面部分的显影剂的显着渗透 其中抗蚀剂图案保留的抗蚀剂图案完成,并且显影的抗蚀剂涂层在该阶段和随后的显影阶段之间被干燥。 曝光的抗蚀剂涂层的开发通过使用包括至少一组显影剂供应系统和冲洗溶液供应系统的显影装置和用于引导携带抗蚀剂涂层的物品的输送装置来进行。