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1. 发明申请

US20100123168A1 NITRIDE CRYSTAL, NITRIDE CRYSTAL SUBSTRATE, EPILAYER-CONTAINING NITRIDE CRYSTAL SUBSTRATE, SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME 审中-公开
标题翻译：氮化物晶体，氮化物晶体衬底，含氮化物晶体衬底，半导体器件及其制造方法
公开(公告)号：US20100123168A1
公开(公告)日：2010-05-20
申请号：US12635490
申请日：2009-12-10
申请人： Keiji ISHIBASHI , Tokiko KAJI , Seiji NAKAHATA , Takayuki NISHIURA
发明人： Keiji ISHIBASHI , Tokiko KAJI , Seiji NAKAHATA , Takayuki NISHIURA
IPC分类号： H01L33/00 , H01L29/20
CPC分类号： G01N23/207 , C30B25/186 , C30B25/20 , C30B29/38 , C30B29/403 , C30B29/406 , C30B33/00 , C30B33/10 , G01B15/08 , G01N2223/602 , G01N2223/634 , H01L21/02389 , H01L21/02433 , H01L21/0254 , H01L22/12 , H01L29/04 , H01L29/045 , H01L29/2003 , Y10T428/2978
摘要： A nitride crystal is characterized in that, in connection with plane spacing of arbitrary specific parallel crystal lattice planes of the nitride crystal obtained from X-ray diffraction measurement performed with variation of X-ray penetration depth from a surface of the crystal while X-ray diffraction conditions of the specific parallel crystal lattice planes are satisfied, a uniform distortion at a surface layer of the crystal represented by a value of |d1−d2|/d2 obtained from the plane spacing d1 at the X-ray penetration depth of 0.3 μm and the plane spacing d2 at the X-ray penetration depth of 5 μm is equal to or lower than 2.1×10−3. The above configuration provides the nitride crystal having a crystal surface layer that is evaluated directly and reliably without breaking the crystal so that it can be used in a preferred fashion as a substrate for a semiconductor device as well as the nitride crystal substrate, an epilayer-containing nitride crystal substrate, a semiconductor device and a method of manufacturing the same.
摘要翻译：氮化物晶体的特征在于，结合由X射线衍射测量得到的氮化物晶体的任意特定平行晶格面的平面间隔，与X射线的X射线满足特定平行晶格面的衍射条件，在由X射线穿透深度为0.3μm的平面间距d1获得的由| d1-d2 | / d2值表示的晶体的表面层处的均匀畸变并且在X射线穿透深度为5μm的平面间距d2等于或低于2.1×10-3。上述结构提供了具有晶体表面层的氮化物晶体，其直接可靠地评估而不破坏晶体，使得其可以以优选的方式用作半导体器件的衬底以及氮化物晶体衬底，含氮化物晶体基板，半导体装置及其制造方法。

2. 发明申请

US20100248478A1 METHOD OF PROCESSING A SURFACE OF GROUP III NITRIDE CRYSTAL AND GROUP III NITRIDE CRYSTAL SUBSTRATE 有权
标题翻译：第III类氮化物晶体和III族氮化物晶体衬底的表面处理方法
公开(公告)号：US20100248478A1
公开(公告)日：2010-09-30
申请号：US12795177
申请日：2010-06-07
申请人： Takayuki NISHIURA , Keiji Ishibashi
发明人： Takayuki NISHIURA , Keiji Ishibashi
IPC分类号： H01L21/306
CPC分类号： H01L21/30625 , C09G1/02 , C30B29/403 , C30B33/00 , H01L21/02024 , H01L29/30
摘要： There is provided a method of processing a surface of a group III nitride crystal, that includes the steps of: polishing a surface of a group III nitride crystal with a polishing slurry containing abrasive grains; and thereafter polishing the surface of the group III nitride crystal with a polishing liquid at least once, and each step of polishing with the polishing liquid employs a basic polishing liquid or an acidic polishing liquid as the polishing liquid. The step of polishing with the basic or acidic polishing liquid allows removal of impurity such as abrasive grains remaining on the surface of the group III nitride crystal after it is polished with the slurry containing the abrasive grains.
摘要翻译：提供一种处理III族氮化物晶体的表面的方法，其包括以下步骤：用含有磨粒的抛光浆料抛光III族氮化物晶体的表面; 然后用研磨液将III族氮化物晶体的表面抛光至少一次，并且用抛光液研磨的每个步骤都使用碱性研磨液或酸性研磨液作为研磨液。用碱性或酸性抛光液抛光的步骤允许在含有磨料颗粒的浆料抛光后，去除残留在III族氮化物晶体表面上的杂质，例如磨粒。

3. 发明申请

US20090159845A1 POLISHING SLURRY, METHOD OF TREATING SURFACE OF GAXIN1-XASYP1-Y CRYSTAL AND GAXIN1-XASYP1-Y CRYSTAL SUBSTRATE 审中-公开
标题翻译：抛光浆，处理GAXIN1-XASYP1-Y晶体和GAXIN1-XASYP1-Y晶体基材表面的方法
公开(公告)号：US20090159845A1
公开(公告)日：2009-06-25
申请号：US12389828
申请日：2009-02-20
申请人： Keiji ISHIBASHI , Takayuki NISHIURA
发明人： Keiji ISHIBASHI , Takayuki NISHIURA
IPC分类号： C09K3/00
CPC分类号： H01L21/02024 , C09G1/02 , C09K3/1463 , H01L33/0095
摘要： The present polishing slurry is a polishing slurry for chemically mechanically polishing a surface of a GaxIn1-xAsyP1-y crystal (0≦x≦1, 0≦y≦1), characterized in that this polishing slurry contains abrasive grains formed of SiO2, this abrasive grain is a secondary particle in which a primary particle is associated, and a ratio d2/d1 of an average particle diameter d2 of a secondary particle to an average particle diameter d1 of a primary particle is not less than 1.6 and not more than 10. According to such the polishing slurry, a crystal surface having a small surface roughness can be formed on a GaxIn1-xAsyP1-y crystal at a high polishing rate and effectively.
摘要翻译：本抛光浆料是用于对GaxIn1-xAsyP1-y晶体（0 <= x <= 1,0 <= y <= 1）的表面进行化学机械抛光的抛光浆料，其特征在于该抛光浆料含有形成的磨料颗粒的SiO 2，该磨粒是初级粒子相关的二次粒子，二次粒子的平均粒径d2与一次粒子的平均粒径d1的比d2 / d1为1.6以上，不大于10.根据这种抛光浆料，可以以高抛光速率有效地在GaxIn1-xAsyP1-y晶体上形成具有小表面粗糙度的晶体表面。

4. 发明申请

US20090140390A1 GaAs SEMICONDUCTOR SUBSTRATE AND METHOD OF MANUFACTURING THE SAME, AND GROUP III-V COMPOUND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译： GaAs半导体衬底及其制造方法和III-V族化合物半导体器件及其制造方法
公开(公告)号：US20090140390A1
公开(公告)日：2009-06-04
申请号：US12326452
申请日：2008-12-02
申请人： Takayuki NISHIURA
发明人： Takayuki NISHIURA
IPC分类号： H01L29/20 , H01L21/66
CPC分类号： H01L29/0657 , H01L21/02395 , H01L21/02433 , H01L21/02543 , H01L21/02658 , H01L29/045
摘要： A GaAs semiconductor substrate includes a main surface (10m) having an inclined angle of 6° to 16° with respect to a (100) plane (10a), and a concentration of chlorine atoms on the main surface (10m) is not more than 1×1013 cm−2. Further, a method of manufacturing a GaAs semiconductor substrate includes a polishing step of polishing a GaAs semiconductor wafer, a first cleaning step of cleaning the polished GaAs semiconductor wafer, an inspection step of inspecting a thickness and a main surface flatness of the GaAs semiconductor wafer subjected to the first cleaning, and a second cleaning step of cleaning the inspected GaAs semiconductor wafer with one of an acid other than hydrochloric acid and an alkali. Thereby, a GaAs semiconductor substrate that allows to obtain a group III-V compound semiconductor device having high properties even when at least one group III-V compound semiconductor layer containing not less than three elements is grown on a main surface, and a method of manufacturing the same are provided.
摘要翻译： GaAs半导体衬底包括相对于（100）面（10a）具有6°至16°的倾斜角的主表面（10m），并且主表面（10m）上的氯原子浓度不大于 1×10 13 cm -2。此外，制造GaAs半导体衬底的方法包括抛光GaAs半导体晶片的抛光步骤，清洁抛光的GaAs半导体晶片的第一清洁步骤，检查GaAs半导体晶片的厚度和主表面平坦度的检查步骤进行第一清洗，以及第二清洗步骤，用除盐酸和碱之外的酸中的一种清洗被检查的GaAs半导体晶片。由此，即使在至少一个含有三个以上的元素的III-V族化合物半导体层在主面上生长，也能够得到具有高特性的III-V族化合物半导体器件的GaAs半导体基板，提供制造相同的。

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