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1. 发明授权

US07898775B2 Magnetoresistive device having bias magnetic field applying layer that includes two magnetic layers antiferromagnetically coupled to each other through intermediate layer 有权
标题翻译：具有偏磁场施加层的磁阻器件包括通过中间层彼此反铁磁耦合的两个磁性层
公开(公告)号：US07898775B2
公开(公告)日：2011-03-01
申请号：US11826290
申请日：2007-07-13
申请人： Kei Hirata , Shinji Hara , Takayasu Kanaya , Takeo Kagami
发明人： Kei Hirata , Shinji Hara , Takayasu Kanaya , Takeo Kagami
IPC分类号： G11B5/39
CPC分类号： G11B5/39
摘要： An MR element includes a free layer whose direction of magnetization changes in response to an external magnetic field. Two bias magnetic field applying layers are disposed adjacent to two side surfaces of the MR element. Each bias magnetic field applying layer includes a nonmagnetic intermediate layer, and a first magnetic layer and a second magnetic layer disposed to sandwich the intermediate layer. The first and second magnetic layers are antiferromagnetically exchange-coupled to each other through RKKY interaction.
摘要翻译： MR元件包括其磁化方向响应于外部磁场而变化的自由层。两个偏置磁场施加层邻近MR元件的两个侧表面设置。每个偏置磁场施加层包括非磁性中间层以及设置成夹持中间层的第一磁性层和第二磁性层。第一和第二磁性层通过RKKY相互作用彼此反铁磁交换耦合。

2. 发明申请

US20080043370A1 Magnetoresistive device having bias magnetic field applying layer that includes two magnetic layers antiferromagnetically coupled to each other through intermediate layer 有权
标题翻译：具有偏磁场施加层的磁阻器件包括通过中间层彼此反铁磁耦合的两个磁性层
公开(公告)号：US20080043370A1
公开(公告)日：2008-02-21
申请号：US11826290
申请日：2007-07-13
申请人： Kei Hirata , Shinji Hara , Takayasu Kanaya , Takeo Kagami
发明人： Kei Hirata , Shinji Hara , Takayasu Kanaya , Takeo Kagami
IPC分类号： G11B5/127
CPC分类号： G11B5/39
摘要： An MR element includes a free layer whose direction of magnetization changes in response to an external magnetic field. Two bias magnetic field applying layers are disposed adjacent to two side surfaces of the MR element. Each bias magnetic field applying layer includes a nonmagnetic intermediate layer, and a first magnetic layer and a second magnetic layer disposed to sandwich the intermediate layer. The first and second magnetic layers are antiferromagnetically exchange-coupled to each other through RKKY interaction.
摘要翻译： MR元件包括其磁化方向响应于外部磁场而变化的自由层。两个偏置磁场施加层邻近MR元件的两个侧表面设置。每个偏置磁场施加层包括非磁性中间层以及设置成夹持中间层的第一磁性层和第二磁性层。第一和第二磁性层通过RKKY相互作用彼此反铁磁交换耦合。

3. 发明申请

US20080030908A1 Magnetoresistive effect element, thin-film magnetic head, method for manufacturing magnetoresistive effect element, and method for manufacturing thin-film magnetic head 审中-公开
标题翻译：磁阻效应元件，薄膜磁头，磁阻效应元件的制造方法以及制造薄膜磁头的方法
公开(公告)号：US20080030908A1
公开(公告)日：2008-02-07
申请号：US11812311
申请日：2007-06-18
申请人： Takeo Kagami , Kosuke Tanaka , Shinji Hara , Takayasu Kanaya , Nobuyoshi Morizumi
发明人： Takeo Kagami , Kosuke Tanaka , Shinji Hara , Takayasu Kanaya , Nobuyoshi Morizumi
IPC分类号： G11B5/127
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G11B5/3906 , G11B5/3932 , G11B2005/3996
摘要： A magnetoresistive effect (MR) element, a thin-film magnetic head having the MR element, a method for manufacturing the MR element, and a method for manufacturing the thin-film magnetic head are disclosed. The MR element, which uses electric current in a direction perpendicular to layer planes, includes a lower electrode layer, a MR multilayered structure formed on the lower electrode layer, a magnetic domain controlling bias layer that is disposed on both sides of the MR multilayered structure along the track-width direction and is made of a material at least partially including an hcp structure, a metal layer made of a material having a bcc structure formed on the magnetic domain controlling bias layer and the MR multilayered structure to cover the magnetic domain controlling bias layer and the MR multilayered structure, and an upper electrode layer formed on the metal layer.
摘要翻译：公开了磁阻效应（MR）元件，具有MR元件的薄膜磁头，MR元件的制造方法和制造薄膜磁头的方法。在垂直于层平面的方向上使用电流的MR元件包括下电极层，形成在下电极层上的MR多层结构，设置在MR多层结构的两侧的磁畴控制偏置层沿着轨道宽度方向并且由至少部分地包括hcp结构的材料制成，由在磁畴控制偏置层上形成的具有bcc结构的材料制成的金属层和MR多层结构以覆盖磁畴控制偏置层和MR多层结构，以及形成在金属层上的上电极层。

4. 发明申请

US20110262632A1 Magnetoresistive Effect Element, Thin-Film Magnetic Head, Method for Manufacturing Magnetoresistive Effect Element, and Method for Manufacturing Thin-Film Magnetic Head 审中-公开
标题翻译：磁阻效应元件，薄膜磁头，制造磁阻效应元件的方法和制造薄膜磁头的方法
公开(公告)号：US20110262632A1
公开(公告)日：2011-10-27
申请号：US13042264
申请日：2011-03-07
申请人： Takeo Kagami , Kosuke Tanaka , Shinji Hara , Takayasu Kanaya , Nobuyoshi Morizumi
发明人： Takeo Kagami , Kosuke Tanaka , Shinji Hara , Takayasu Kanaya , Nobuyoshi Morizumi
IPC分类号： B05D5/12 , B05D1/36
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G11B5/3906 , G11B5/3932 , G11B2005/3996
摘要： A magnetoresistive effect (MR) element, a thin-film magnetic head having the MR element, a method for manufacturing the MR element, and a method for manufacturing the thin-film magnetic head are disclosed. The MR element, which uses electric current in a direction perpendicular to layer planes, includes a lower electrode layer, a MR multilayered structure formed on the lower electrode layer, a magnetic domain controlling bias layer that is disposed on both sides of the MR multilayered structure along the track-width direction and is made of a material at least partially including an hcp structure, a metal layer made of a material having a bcc structure formed on the magnetic domain controlling bias layer and the MR multilayered structure to cover the magnetic domain controlling bias layer and the MR multilayered structure, and an upper electrode layer formed on the metal layer.
摘要翻译：公开了磁阻效应（MR）元件，具有MR元件的薄膜磁头，MR元件的制造方法和制造薄膜磁头的方法。在垂直于层平面的方向上使用电流的MR元件包括下电极层，形成在下电极层上的MR多层结构，设置在MR多层结构的两侧的磁畴控制偏置层沿着轨道宽度方向并且由至少部分地包括hcp结构的材料制成，由在磁畴控制偏置层上形成的具有bcc结构的材料制成的金属层和MR多层结构以覆盖磁畴控制偏置层和MR多层结构，以及形成在金属层上的上电极层。

5. 发明授权

US08724264B2 Thin film magnetic head, magnetic head slider, head gimbal assembly, head arm assembly, magnetic disk device and method of manufacturing thin film magnetic head 有权
标题翻译：薄膜磁头，磁头滑块，头万向架组件，头臂组件，磁盘装置及制造薄膜磁头的方法
公开(公告)号：US08724264B2
公开(公告)日：2014-05-13
申请号：US12230781
申请日：2008-09-04
申请人： Kei Hirata , Takayasu Kanaya , Kosuke Tanaka , Shinji Hara
发明人： Kei Hirata , Takayasu Kanaya , Kosuke Tanaka , Shinji Hara
IPC分类号： G11B5/33 , B82Y10/00 , B82Y25/00 , G11B5/39
CPC分类号： B82Y10/00 , B82Y25/00 , G11B5/3909 , G11B5/3912 , G11B5/3932 , G11B2005/3996
摘要： A thin film magnetic head including a magnetoresistive element (MR) having higher reading performance. In manufacturing the thin film magnetic head, after forming an MR element, a pair of magnetic domain controlling layers are formed by stacking a buffer layer, a magnetic bias layer and a first cap layer in this order on both sides, in a track-width direction, of the MR element via an insulating layer, respectively. Then, a second cap layer is formed to cover the upper surface of the MR element and connect the pair of cap-layers. Then, a gap adjustment layer and a top shielding layer are formed to cover the pair of first cap layers and the second cap layer, completing a read head section.
摘要翻译：包括具有较高读取性能的磁阻元件（MR）的薄膜磁头。在制造薄膜磁头时，在形成MR元件之后，通过在两侧依次层叠缓冲层，磁偏置层和第一盖层而形成一对磁畴控制层，轨道宽度 MR元件的方向分别经由绝缘层。然后，形成第二盖层以覆盖MR元件的上表面并连接一对盖层。然后，形成间隙调整层和顶部屏蔽层以覆盖一对第一盖层和第二盖层，从而完成读取头部。

6. 发明申请

US20100053819A1 Thin film magnetic head, magnetic head slider, head gimbal assembly, head arm assembly, magnetic disk device and method of manufacturing thin film magnetic head 有权
标题翻译：薄膜磁头，磁头滑块，头万向架组件，头臂组件，磁盘装置及制造薄膜磁头的方法
公开(公告)号：US20100053819A1
公开(公告)日：2010-03-04
申请号：US12230781
申请日：2008-09-04
申请人： Kei Hirata , Takayasu Kanaya , Kosuke Tanaka , Shinji Hara
发明人： Kei Hirata , Takayasu Kanaya , Kosuke Tanaka , Shinji Hara
IPC分类号： G11B5/33
CPC分类号： B82Y10/00 , B82Y25/00 , G11B5/3909 , G11B5/3912 , G11B5/3932 , G11B2005/3996
摘要： The invention is devised to provide a method of manufacturing a thin film magnetic head including a magnetoresistive element having higher reading performance. In manufacturing the thin film magnetic head, after forming an MR element 15, a pair of magnetic domain controlling layers 16 are formed by stacking a buffer layer 161, a magnetic bias layer 162 and a cap layer 163 in this order on both sides, in a track-width direction, of the MR element 15 via an insulating layer 14 respectively. Then, a cap layer 17 is formed so as to cover the upper surface of the MR element 15 and connect the pair of cap-layers 163. After that, a gap adjustment layer 18 and a top shielding layer 19 are formed in order so as to cover the pair of cap layers 163 and the cap layer 17, thereby a read head section 10 is completed. In this manner, the upper surface of the magnetic bias layer 162 is in contact only with the cap-layer 17 and the cap-layer 163, which are made of a material excellent in crystal lattice compatibility with the magnetic bias layer 162. As a result, the coercive force of the magnetic bias layer 162 can be increased. What is more, roughness of the undersurface of the top shielding layer 19 can be improved because of the presence of the cap layer 17.
摘要翻译：本发明旨在提供一种制造包括具有更高读取性能的磁阻元件的薄膜磁头的方法。在制造薄膜磁头时，在形成MR元件15之后，通过在两侧依次层叠缓冲层161，磁偏置层162和盖层163，形成一对磁畴控制层16 分别经由绝缘层14的MR元件15的轨道宽度方向。然后，形成盖层17，以覆盖MR元件15的上表面并连接一对盖层163.之后，依次形成间隙调整层18和顶部屏蔽层19，以便覆盖一对盖层163和盖层17，从而完成读头部10。以这种方式，磁偏置层162的上表面仅与盖层17和盖层163接触，盖层17和盖层163由与磁偏置层162的晶格相容性优异的材料制成。作为结果，可以增加磁偏置层162的矫顽力。此外，由于存在盖层17，所以可以提高顶部屏蔽层19的下表面的粗糙度。

7. 发明授权

US08009392B2 Thin film magnetic head and magnetic disk device 有权
标题翻译：薄膜磁头和磁盘装置
公开(公告)号：US08009392B2
公开(公告)日：2011-08-30
申请号：US12318924
申请日：2009-01-13
申请人： Takayasu Kanaya , Kei Hirata , Yohei Koyanagi , Seiichi Takayama , Shinji Hara , Toshiyuki Ayukawa
发明人： Takayasu Kanaya , Kei Hirata , Yohei Koyanagi , Seiichi Takayama , Shinji Hara , Toshiyuki Ayukawa
IPC分类号： G11B5/33 , G11B5/48 , G11B5/60
CPC分类号： G11B5/3932 , G01R33/098
摘要： Foundation layers of a thin film magnetic head are disposed between insulating layers and bias magnetic field application layers, and are configured of Cr or Cr alloy. The insulating layers are configured of a Si oxide such that the Si content of the Si oxide is in the range of 30˜56 at % (atom %) and that the atom ratio of oxygen to Si (O/Si) is in the range of 0.8˜1.3. With the configuration, the occurrence rate of noise is reduced.
摘要翻译：薄膜磁头的底层设置在绝缘层和偏置磁场施加层之间，并由Cr或Cr合金构成。绝缘层由Si氧化物构成，使得Si氧化物的Si含量在30〜56at％（原子％）的范围内，氧与Si（O / Si）的原子比在范围内为0.8〜1.3。通过该结构，噪声的发生率降低。

8. 发明申请

US20100177440A1 Thin film magnetic head and magnetic disk device 有权
标题翻译：薄膜磁头和磁盘装置
公开(公告)号：US20100177440A1
公开(公告)日：2010-07-15
申请号：US12318924
申请日：2009-01-13
申请人： Takayasu Kanaya , Kei Hirata , Yohei Koyanagi , Seiichi Takayama , Shinji Hara , Toshiyuki Ayukawa
发明人： Takayasu Kanaya , Kei Hirata , Yohei Koyanagi , Seiichi Takayama , Shinji Hara , Toshiyuki Ayukawa
IPC分类号： G11B5/127 , G11B5/48 , G11B5/60
CPC分类号： G11B5/3932 , G01R33/098
摘要： Foundation layers of a thin film magnetic head are disposed between insulating layers and bias magnetic field application layers, and are configured of Cr or Cr alloy. The insulating layers are configured of a Si oxide such that the Si content of the Si oxide is in the range of 30˜56 at % (atom %) and that the atom ratio of oxygen to Si (O/Si) is in the range of 0.8˜1.3. With the configuration, the occurrence rate of noise is reduced.
摘要翻译：薄膜磁头的底层设置在绝缘层和偏置磁场施加层之间，并由Cr或Cr合金构成。绝缘层由Si氧化物构成，使得Si氧化物的Si含量在30〜56at％（原子％）的范围内，氧与Si（O / Si）的原子比在范围内为0.8〜1.3。通过该结构，噪声的发生率降低。

9. 发明授权

US07920362B2 Magnetio-resistive device including a multi-layer spacer which includes a semiconductor oxide layer 有权
标题翻译：磁阻器件包括包括半导体氧化物层的多层间隔物
公开(公告)号：US07920362B2
公开(公告)日：2011-04-05
申请号：US11943171
申请日：2007-11-20
申请人： Shinji Hara , Kei Hirata , Koji Shimazawa , Yoshihiro Tsuchiya , Tomohito Mizuno
发明人： Shinji Hara , Kei Hirata , Koji Shimazawa , Yoshihiro Tsuchiya , Tomohito Mizuno
IPC分类号： G11B5/39
CPC分类号： G11B5/59683
摘要： A giant magneto-resistive effect device having a CPP structure including a spacer layer, and a fixed magnetization layer and a free layer stacked one upon another with said spacer layer interposed between them. The free layer functions such that its magnetization direction changes depending on an external magnetic field. The spacer layer comprises a first nonmagnetic metal layer and a second nonmagnetic metal layer, each formed of a nonmagnetic metal material. A semiconductor oxide layer is interposed between them. The semiconductor oxide layer forming a part of the spacer layer comprises zinc oxide as a main ingredient.
摘要翻译：具有包括间隔层的CPP结构的巨磁阻效应器件，以及彼此层叠的所述间隔层的固定磁化层和自由层。自由层的功能使得其磁化方向根据外部磁场而变化。间隔层包括由非磁性金属材料形成的第一非磁性金属层和第二非磁性金属层。在它们之间插入半导体氧化物层。形成间隔层的一部分的半导体氧化物层包含氧化锌作为主要成分。

10. 发明申请

US20080174920A1 CPP TYPE MAGNETO-RESISTIVE EFFECT DEVICE AND MAGNETIC DISC SYSTEM 有权
标题翻译： CPP型磁阻效应器和磁盘系统
公开(公告)号：US20080174920A1
公开(公告)日：2008-07-24
申请号：US11626562
申请日：2007-01-24
申请人： Shinji Hara , Kei Hirata , Koji Shimazawa , Yoshihiro Tsuchiya , Tomohito Mizuno
发明人： Shinji Hara , Kei Hirata , Koji Shimazawa , Yoshihiro Tsuchiya , Tomohito Mizuno
IPC分类号： G11B5/56 , G11B5/127
CPC分类号： G11B5/4826 , B82Y10/00 , B82Y25/00 , G11B5/3906 , G11B2005/3996
摘要： The invention provides a giant magneto-resistive effect device (CPP-GMR device) having a CPP (current perpendicular to plane) structure comprising a spacer layer, and a fixed magnetized layer and a free layer stacked one upon another with said spacer layer interleaved between them, with a sense current applied in a stacking direction, wherein the spacer layer comprises a first and a second nonmagnetic metal layer, each formed of a nonmagnetic metal material, and a semiconductor oxide layer interleaved between the first and the second nonmagnetic metal layer, wherein the semiconductor oxide layer that forms a part of the spacer layer is made of indium oxide (In2O3), or the semiconductor oxide layer contains indium oxide (In2O3) as its main component, and an oxide containing a tetravalent cation of SnO2 is contained in the indium oxide that is the main component. The semiconductor oxide layer that forms a part of the spacer layer can thus be made thick while the device has a low area resistivity as desired, ensuring much more favorable advantages: ever higher MR performance, prevention of device area resistivity variations, and much improved reliability of film characteristics.
摘要翻译：本发明提供一种具有CPP（垂直于平面的电流）结构的巨磁阻效应器件（CPP-GMR器件），其包括间隔层，以及固定磁化层和自由层，所述固定磁化层和自由层彼此层叠，它们具有沿层叠方向施加的感测电流，其中间隔层包括由非磁性金属材料形成的第一和第二非磁性金属层和交错在第一和第二非磁性金属层之间的半导体氧化物层，其中形成间隔层的一部分的半导体氧化物层由氧化铟（In 2 O 3 O 3）制成，或者半导体氧化物层含有氧化铟（In < 作为其主要成分的氧化物，包含SnO 2的四价阳离子的氧化物，作为主要成分的氧化铟中含有。因此，形成间隔层的一部分的半导体氧化物层可以制成厚度，同时器件根据需要具有低的面积电阻率，确保更有利的优点：越来越高的MR性能，防止器件面积电阻率变化和大大提高的可靠性的电影特色。

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