专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US08077436B2 CPP-type magnetoresistance effect element having three magnetic layers 有权
标题翻译：具有三个磁性层的CPP型磁阻效应元件
公开(公告)号：US08077436B2
公开(公告)日：2011-12-13
申请号：US12052633
申请日：2008-03-20
申请人： Kei Hirata , Satoshi Miura , Tomohito Mizuno , Takeo Kagami
发明人： Kei Hirata , Satoshi Miura , Tomohito Mizuno , Takeo Kagami
IPC分类号： G11B5/39
CPC分类号： G11B5/3932 , B82Y10/00 , B82Y25/00 , G01R33/098 , G11B5/3906 , G11B5/3909 , H01L43/08
摘要： A magnetoresistance effect element comprises: a magnetoresistive stack including: first, second and third magnetic layers whose magnetization directions change in accordance with an external magnetic field, said second magnetic layer being located between said first magnetic layer and the third magnetic layer; a first non-magnetic intermediate layer sandwiched between said first and second magnetic layers; and a second non-magnetic intermediate layer sandwiched between said second and third magnetic layers; wherein sense current is adapted to flow in a direction perpendicular to a film plane; a bias magnetic layer provided on an opposite side of said magnetoresistive stack from an air bearing surface.
摘要翻译：磁阻效应元件包括：磁阻堆叠，其包括：其磁化方向根据外部磁场而变化的第一，第二和第三磁性层，所述第二磁性层位于所述第一磁性层和所述第三磁性层之间; 夹在所述第一和第二磁性层之间的第一非磁性中间层; 以及夹在所述第二和第三磁性层之间的第二非磁性中间层; 其中感测电流适于在垂直于膜平面的方向上流动; 偏置磁性层，设置在所述磁阻堆叠的与空气轴承表面相反的一侧上。

2. 发明申请

US20090237839A1 CPP-TYPE MAGNETORESISTANCE EFFECT ELEMENT HAVING THREE MAGNETIC LAYERS 有权
标题翻译：具有三个磁性层的CPP型磁阻效应元件
公开(公告)号：US20090237839A1
公开(公告)日：2009-09-24
申请号：US12052633
申请日：2008-03-20
申请人： Kei Hirata , Satoshi Miura , Tomohito Mizuno , Takeo Kagami
发明人： Kei Hirata , Satoshi Miura , Tomohito Mizuno , Takeo Kagami
IPC分类号： G11B5/60 , G11B5/33
CPC分类号： G11B5/3932 , B82Y10/00 , B82Y25/00 , G01R33/098 , G11B5/3906 , G11B5/3909 , H01L43/08
摘要： A magnetoresistance effect element comprises: a magnetoresistive stack including: first, second and third magnetic layers whose magnetization directions change in accordance with an external magnetic field, said second magnetic layer being located between said first magnetic layer and the third magnetic layer; a first non-magnetic intermediate layer sandwiched between said first and second magnetic layers, said first non-magnetic intermediate layer allowing said first magnetic layer and said second magnetic layer to be exchange-coupled such that the magnetization directions thereof are anti-parallel to each other when no magnetic field is applied; and a second non-magnetic intermediate layer sandwiched between said second and third magnetic layers, said second non-magnetic intermediate layer producing a magnetoresistance effect between said second magnetic layer and said third magnetic layer; wherein sense current is adapted to flow in a direction perpendicular to a film plane; a bias magnetic layer provided on an opposite side of said magnetoresistive stack from an air bearing surface, said bias magnetic layer applying a bias magnetic field to said magnetoresistive stack in a direction perpendicular to the air bearing surface.
摘要翻译：磁阻效应元件包括：磁阻堆叠，其包括：其磁化方向根据外部磁场而变化的第一，第二和第三磁性层，所述第二磁性层位于所述第一磁性层和所述第三磁性层之间; 夹在所述第一和第二磁性层之间的第一非磁性中间层，所述第一非磁性中间层允许所述第一磁性层和所述第二磁性层交换耦合，使得其磁化方向与每个磁性层反平行另外当不施加磁场时; 以及夹在所述第二和第三磁性层之间的第二非磁性中间层，所述第二非磁性中间层在所述第二磁性层和所述第三磁性层之间产生磁阻效应; 其中感测电流适于在垂直于膜平面的方向上流动; 偏置磁性层，其设置在所述磁阻堆叠的与空气支承表面相反的一侧上，所述偏磁层在与所述空气轴承表面垂直的方向上向所述磁阻堆叠施加偏置磁场。

3. 发明授权

US07881025B2 Magneto-resistive effect device having a spacer layer of a semiconductor layer interposed between first and second nonmagnetic metal layers and a work function control layer for use in a thin-film magnetic head usable in a head gimbal assembly in a hard disk system 有权
标题翻译：具有介于第一和第二非磁性金属层之间的半导体层的间隔层的磁阻效应器件和用于可用于硬盘系统中的头部万向节组件中的薄膜磁头的功函数控制层
公开(公告)号：US07881025B2
公开(公告)日：2011-02-01
申请号：US11931219
申请日：2007-10-31
申请人： Koji Shimazawa , Yoshihiro Tsuchiya , Tomohito Mizuno , Kei Hirata
发明人： Koji Shimazawa , Yoshihiro Tsuchiya , Tomohito Mizuno , Kei Hirata
IPC分类号： G11B5/39
CPC分类号： G11B5/39 , B82Y25/00 , B82Y40/00 , G01R33/093 , G11B5/3906 , G11B5/3993 , H01F10/3272 , H01F41/306 , H01L43/08
摘要： The invention provides a CPP-GMR device comprising a spacer layer. The spacer layer comprises a first nonmagnetic metal layer and a second nonmagnetic metal layer, each formed of a nonmagnetic metal material, and a semiconductor layer interposed between the first nonmagnetic metal layer and the second nonmagnetic metal layer, and further comprises a work function control layer formed between the first nonmagnetic metal layer and the semiconductor layer and/or between the second nonmagnetic metal layer and the semiconductor layer. The semiconductor layer is an n-type semiconductor, and the work function control layer is made of a material having a work function smaller than that of said first nonmagnetic metal layer, and said second nonmagnetic metal layer. It is thus possible to obtain by far more improved advantages.
摘要翻译：本发明提供一种包括间隔层的CPP-GMR装置。间隔层包括由非磁性金属材料形成的第一非磁性金属层和第二非磁性金属层，以及介于第一非磁性金属层和第二非磁性金属层之间的半导体层，还包括功函数控制层形成在第一非磁性金属层和半导体层之间和/或第二非磁性金属层与半导体层之间。半导体层是n型半导体，功函数控制层由功函数小于所述第一非磁性金属层的功函数和所述第二非磁性金属层构成。因此可以获得更多改进的优点。

4. 发明申请

US20080117554A1 MAGNETO-RESISTIVE EFFECT DEVICE, THIN-FILM MAGNETIC HEAD, HEAD GIMBAL ASSEMBLY, AND HARD DISK SYSTEM 有权
标题翻译：磁阻效应器件，薄膜磁头，头盖组件和硬盘系统
公开(公告)号：US20080117554A1
公开(公告)日：2008-05-22
申请号：US11943171
申请日：2007-11-20
申请人： Shinji Hara , Kei Hirata , Koji Shimazawa , Yoshihiro Tsuchiya , Tomohito Mizuno
发明人： Shinji Hara , Kei Hirata , Koji Shimazawa , Yoshihiro Tsuchiya , Tomohito Mizuno
IPC分类号： G11B5/127
CPC分类号： G11B5/59683
摘要： The invention provides a giant magneto-resistive effect device having a CPP structure comprising a spacer layer, and a fixed magnetization layer and a free layer stacked one upon another with said spacer layer interposed between them, wherein the free layer functions such that its magnetization direction changes depending on an external magnetic field, and the spacer layer comprises a first nonmagnetic metal layer and a second nonmagnetic metal layer, each formed of a nonmagnetic metal material, and a semiconductor oxide layer interposed between them, wherein the semiconductor oxide layer forming a part of the spacer layer comprises zinc oxide as a main ingredient, wherein the main ingredient zinc oxide contains at least one selected from among oxides containing a trivalent cation of Al2O3, Ga2O3, In2O3, and B2O3, and a tetravalent cation of TiO2. It is thus possible to make thicker the semiconductor oxide layer forming a part of the spacer layer while keeping the device's area resistivity low as desired, thereby offering the advantages: much higher MR performance with much less variable device's area resistivity, and much more improved film performance reliability.
摘要翻译：本发明提供一种具有包括间隔层的CPP结构的巨磁阻效应器件，以及一个彼此层叠的所述间隔层彼此层叠的固定磁化层和自由层，其中自由层的功能是使其磁化方向变化取决于外部磁场，并且间隔层包括由非磁性金属材料形成的第一非磁性金属层和第二非磁性金属层以及介于它们之间的半导体氧化物层，其中形成部分的半导体氧化物层的间隔层包含氧化锌作为主要成分，其中主要成分氧化锌含有选自含有三价阳离子的氧化物中的至少一种，其中含有三价阳离子的Al 2 O 3， Ga 2 O 3，以及B 2 O 3，以及B 2 O 3， SUB> 3 <！ - SIPO - >和TiO 2的四价阳离子。因此，可以使形成间隔层的一部分的半导体氧化物层变得更厚，同时保持器件的面积电阻率为期望的低，从而具有以下优点：MR性能更高，可变器件的面积电阻率更小得多，并且更多改进的膜性能可靠性。

5. 发明申请

US20080062557A1 Magnetoresistive element having free layer, pinned layer, and spacer layer disposed therebetween, the spacer layer including semiconductor layer 有权
标题翻译：具有自由层，钉扎层和间隔层的磁阻元件设置在它们之间，间隔层包括半导体层
公开(公告)号：US20080062557A1
公开(公告)日：2008-03-13
申请号：US11698180
申请日：2007-01-26
申请人： Yoshihiro Tsuchiya , Kei Hirata , Tomohito Mizuno , Koji Shimazawa
发明人： Yoshihiro Tsuchiya , Kei Hirata , Tomohito Mizuno , Koji Shimazawa
IPC分类号： G11B5/52 , G11B5/127 , G11B5/56
CPC分类号： G11B5/59683 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/3909 , G11B5/3929 , G11B2005/3996
摘要： An MR element includes: a free layer having a direction of magnetization that changes in response to a signal magnetic field; a pinned layer having a fixed direction of magnetization; and a spacer layer disposed between these layers. The spacer layer includes a first nonmagnetic metal layer and a second nonmagnetic metal layer each made of a nonmagnetic metal material, and a semiconductor layer that is made of a material containing an oxide semiconductor and that is disposed between the first and second nonmagnetic metal layers. The MR element has a resistance-area product within a range of 0.1 to 0.3Ω·m2, and the spacer layer has a conductivity within a range of 133 to 432 S/cm.
摘要翻译： MR元件包括：具有响应于信号磁场而改变的磁化方向的自由层; 具有固定的磁化方向的钉扎层; 以及设置在这些层之间的间隔层。间隔层包括由非磁性金属材料制成的第一非磁性金属层和第二非磁性金属层，以及由含有氧化物半导体的材料制成并且设置在第一和第二非磁性金属层之间的半导体层。 MR元件的电阻面积为0.1〜0.3Omeg·m 2的范围，间隔层的导电率为133〜432S / cm。

6. 发明授权

US07782575B2 Magnetoresistive element having free layer, pinned layer, and spacer layer disposed therebetween, the spacer layer including semiconductor layer 有权
标题翻译：具有自由层，钉扎层和间隔层的磁阻元件设置在它们之间，间隔层包括半导体层
公开(公告)号：US07782575B2
公开(公告)日：2010-08-24
申请号：US11698180
申请日：2007-01-26
申请人： Yoshihiro Tsuchiya , Kei Hirata , Tomohito Mizuno , Koji Shimazawa
发明人： Yoshihiro Tsuchiya , Kei Hirata , Tomohito Mizuno , Koji Shimazawa
IPC分类号： G11B5/39
CPC分类号： G11B5/59683 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/3909 , G11B5/3929 , G11B2005/3996
摘要： An MR element includes: a free layer having a direction of magnetization that changes in response to a signal magnetic field; a pinned layer having a fixed direction of magnetization; and a spacer layer disposed between these layers. The spacer layer includes a first nonmagnetic metal layer and a second nonmagnetic metal layer each made of a nonmagnetic metal material, and a semiconductor layer that is made of a material containing an oxide semiconductor and that is disposed between the first and second nonmagnetic metal layers. The MR element has a resistance-area product within a range of 0.1 to 0.3Ω·μm2, and the spacer layer has a conductivity within a range of 133 to 432 S/cm.
摘要翻译： MR元件包括：具有响应于信号磁场而改变的磁化方向的自由层; 具有固定的磁化方向的钉扎层; 以及设置在这些层之间的间隔层。间隔层包括由非磁性金属材料制成的第一非磁性金属层和第二非磁性金属层，以及由含有氧化物半导体的材料制成并且设置在第一和第二非磁性金属层之间的半导体层。 MR元件的电阻面积为0.1〜0.3Ω·Ω·cm 2，间隔层的导电率为133〜432S / cm。

7. 发明授权

US07672092B2 Method for manufacturing magnetic field detecting element, utilizing diffusion of metal 有权
标题翻译：利用金属扩散制造磁场检测元件的方法
公开(公告)号：US07672092B2
公开(公告)日：2010-03-02
申请号：US11708537
申请日：2007-02-21
申请人： Yoshihiro Tsuchiya , Tomohito Mizuno , Kei Hirata , Keita Kawamori , Koji Shimazawa
发明人： Yoshihiro Tsuchiya , Tomohito Mizuno , Kei Hirata , Keita Kawamori , Koji Shimazawa
IPC分类号： G11B5/127
CPC分类号： G11B5/3906 , B82Y25/00 , G01R33/093 , G11B5/3163 , H01L43/12 , Y10T428/1121
摘要： A method for manufacturing a magnetic field detecting element has the steps of: forming stacked layers by sequentially depositing a pinned layer, a spacer layer, a spacer adjoining layer which is adjacent to the spacer layer, a metal layer, and a Heusler alloy layer in this order, such that the layers adjoin each other; and heat treating the stacked layers in order to form the free layer out of the spacer adjoining layer, the metal layer, and the Heusler alloy layer. The spacer adjoining layer is mainly formed of cobalt and iron, and has a body centered cubic structure, and the metal layer is formed of an element selected from the group consisting of silver, gold, copper, palladium, or platinum, or is formed of an alloy thereof.
摘要翻译：一种制造磁场检测元件的方法，其特征在于：通过依次沉积与间隔层相邻的钉扎层，间隔层，间隔物邻接层，金属层和Heusler合金层，形成堆叠层这个顺序，使得这些层彼此相邻; 并且对层叠层进行热处理，以便在间隔物邻接层，金属层和Heusler合金层之间形成自由层。间隔物邻接层主要由钴和铁形成，并且具有体心立方结构，金属层由选自银，金，铜，钯或铂的元素形成，或由其合金。

8. 发明授权

US07672085B2 CPP type magneto-resistive effect device having a semiconductor oxide spacer layer and magnetic disk system 有权
标题翻译：具有半导体氧化物间隔层和磁盘系统的CPP型磁阻效应器件
公开(公告)号：US07672085B2
公开(公告)日：2010-03-02
申请号：US11626562
申请日：2007-01-24
申请人： Shinji Hara , Kei Hirata , Koji Shimazawa , Yoshihiro Tsuchiya , Tomohito Mizuno
发明人： Shinji Hara , Kei Hirata , Koji Shimazawa , Yoshihiro Tsuchiya , Tomohito Mizuno
IPC分类号： G11B5/39
CPC分类号： G11B5/4826 , B82Y10/00 , B82Y25/00 , G11B5/3906 , G11B2005/3996
摘要： The invention provides a giant magneto-resistive effect device (CPP-GMR device) having a CPP (current perpendicular to plane) structure comprising a spacer layer, and a fixed magnetized layer and a free layer stacked one upon another with said spacer layer interleaved between them, with a sense current applied in a stacking direction, wherein the spacer layer comprises a first and a second nonmagnetic metal layer, each formed of a nonmagnetic metal material, and a semiconductor oxide layer interleaved between the first and the second nonmagnetic metal layer, wherein the semiconductor oxide layer that forms a part of the spacer layer is made of indium oxide (In2O3), or the semiconductor oxide layer contains indium oxide (In2O3) as its main component, and an oxide containing a tetravalent cation of SnO2 is contained in the indium oxide that is the main component. The semiconductor oxide layer that forms a part of the spacer layer can thus be made thick while the device has a low area resistivity as desired, ensuring much more favorable advantages: ever higher MR performance, prevention of device area resistivity variations, and much improved reliability of film characteristics.
摘要翻译：本发明提供一种具有CPP（垂直于平面的电流）结构的巨磁阻效应器件（CPP-GMR器件），其包括间隔层，以及固定磁化层和自由层，所述固定磁化层和自由层彼此层叠，它们具有沿层叠方向施加的感测电流，其中间隔层包括由非磁性金属材料形成的第一和第二非磁性金属层和交错在第一和第二非磁性金属层之间的半导体氧化物层，其中形成间隔层的一部分的半导体氧化物层由氧化铟（In 2 O 3）制成，或者半导体氧化物层包含氧化铟（In 2 O 3）作为其主要成分，并且包含含有SnO 4的四价阳离子的氧化物作为主要成分的氧化铟。因此，形成间隔层的一部分的半导体氧化物层可以制成厚度，同时器件根据需要具有低的面积电阻率，确保更有利的优点：越来越高的MR性能，防止器件面积电阻率变化和大大提高的可靠性的电影特色。

9. 发明申请

US20080100968A1 MAGNETO-RESISTIVE EFFECT DEVICE, THIN-FILM MAGNETIC HEAD, HEAD GIMBAL ASSEMBLY, AND HARD DISK SYSTEM 有权
标题翻译：磁阻效应器件，薄膜磁头，头盖组件和硬盘系统
公开(公告)号：US20080100968A1
公开(公告)日：2008-05-01
申请号：US11870097
申请日：2007-10-10
申请人： Koji SHIMAZAWA , Yoshihiro Tsuchiya , Tomohito Mizuno , Kei Hirata
发明人： Koji SHIMAZAWA , Yoshihiro Tsuchiya , Tomohito Mizuno , Kei Hirata
IPC分类号： G11B5/33
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , B82Y40/00 , G01R33/093 , G11B5/3906 , G11B2005/3996 , H01F10/3272 , H01F41/305 , Y10T29/49044 , Y10T29/49048
摘要： The invention provides a giant magneto-resistive effect device (CPP-GMR device) having a CPP (current perpendicular to plane) structure comprising a spacer layer, and a fixed magnetization layer and a free layer stacked one upon another with the spacer layer interposed between them, with a sense current applied in a stacking direction. The free layer functions such that the direction of magnetization changes depending on an external magnetic field. The spacer layer comprises a first nonmagnetic metal layer and a second nonmagnetic metal layer, each made of a nonmagnetic metal material, and a semiconductor layer formed between the first and the second nonmagnetic metal layer. The semiconductor layer is an n-type oxide semiconductor. When the first and second nonmagnetic metal layers are formed in order, the first nonmagnetic metal layer is formed prior to the second nonmagnetic metal layer, and an anti-oxidizing layer is formed between the first and the semiconductor layer. The anti-oxidizing layer is formed of a material incapable of producing a Schottky barrier upon joining to the semiconductor layer. It is thus possible to achieve very favorable advantages of obtaining high MR performance without increasing the head noise, and holding back variations of device's area resistivity (AR), thereby making much more improvements in the reliability of film characteristics.
摘要翻译：本发明提供了一种具有CPP（垂直于平面的电流）结构的巨磁阻效应器件（CPP-GMR器件），该结构包括间隔层，以及固定磁化层和自由层，间隔层介于它们具有沿堆叠方向施加的感测电流。自由层起着使得磁化方向取决于外部磁场的作用。间隔层包括由非磁性金属材料制成的第一非磁性金属层和第二非磁性金属层，以及形成在第一和第二非磁性金属层之间的半导体层。半导体层是n型氧化物半导体。当依次形成第一和第二非磁性金属层时，在第二非磁性金属层之前形成第一非磁性金属层，并且在第一和半导体层之间形成抗氧化层。抗氧化层由与半导体层接合时不能产生肖特基势垒的材料形成。因此，可以获得非常有利的优点，即不增加磁头噪声，并且抑制器件面积电阻率（AR）的变化，从而在膜特性的可靠性方面进一步提高，从而获得高MR性能。

10. 发明授权

US07920362B2 Magnetio-resistive device including a multi-layer spacer which includes a semiconductor oxide layer 有权
标题翻译：磁阻器件包括包括半导体氧化物层的多层间隔物
公开(公告)号：US07920362B2
公开(公告)日：2011-04-05
申请号：US11943171
申请日：2007-11-20
申请人： Shinji Hara , Kei Hirata , Koji Shimazawa , Yoshihiro Tsuchiya , Tomohito Mizuno
发明人： Shinji Hara , Kei Hirata , Koji Shimazawa , Yoshihiro Tsuchiya , Tomohito Mizuno
IPC分类号： G11B5/39
CPC分类号： G11B5/59683
摘要： A giant magneto-resistive effect device having a CPP structure including a spacer layer, and a fixed magnetization layer and a free layer stacked one upon another with said spacer layer interposed between them. The free layer functions such that its magnetization direction changes depending on an external magnetic field. The spacer layer comprises a first nonmagnetic metal layer and a second nonmagnetic metal layer, each formed of a nonmagnetic metal material. A semiconductor oxide layer is interposed between them. The semiconductor oxide layer forming a part of the spacer layer comprises zinc oxide as a main ingredient.
摘要翻译：具有包括间隔层的CPP结构的巨磁阻效应器件，以及彼此层叠的所述间隔层的固定磁化层和自由层。自由层的功能使得其磁化方向根据外部磁场而变化。间隔层包括由非磁性金属材料形成的第一非磁性金属层和第二非磁性金属层。在它们之间插入半导体氧化物层。形成间隔层的一部分的半导体氧化物层包含氧化锌作为主要成分。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式