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1. 发明授权

US07741699B2 Semiconductor device having ultra-shallow and highly activated source/drain extensions 有权
标题翻译：半导体器件具有超浅的和高激活的源极/漏极延伸
公开(公告)号：US07741699B2
公开(公告)日：2010-06-22
申请号：US11521660
申请日：2006-09-15
申请人： Keh-Chiang Ku , Chun-Feng Nieh , Li-Ping Huang , Chih-Chiang Wang , Chien-Hao Chen , Hsun Chang , Li-Ting Wang , Tze-Liang Lee , Shih-Chang Chen
发明人： Keh-Chiang Ku , Chun-Feng Nieh , Li-Ping Huang , Chih-Chiang Wang , Chien-Hao Chen , Hsun Chang , Li-Ting Wang , Tze-Liang Lee , Shih-Chang Chen
IPC分类号： H01L29/00
CPC分类号： H01L21/26586 , H01L21/26506 , H01L21/26513 , H01L21/324 , H01L29/0847 , H01L29/665 , H01L29/6659 , H01L29/7833
摘要： A semiconductor device includes a gate stack over a semiconductor substrate, a lightly doped n-type source/drain (LDD) region in the semiconductor substrate and adjacent the gate stack wherein the LDD region comprises an n-type impurity, a heavily doped n-type source/drain (N+ S/D) region in the semiconductor substrate and adjacent the gate stack wherein the N+ S/D region comprises an n-type impurity, a pre-amorphized implantation (PAI) region in the semiconductor substrate wherein the PAI region comprises an end of range (EOR) region, and an interstitial blocker region in the semiconductor substrate wherein the interstitial blocker region has a depth greater than a depth of the LDD region but less than a depth of the EOR region.
摘要翻译：半导体器件包括在半导体衬底上的栅极堆叠，半导体衬底中的轻掺杂n型源极/漏极（LDD）区域并且邻近栅极堆叠，其中LDD区域包括n型杂质，重掺杂n- （N + S / D）区，其中N + S / D区包括n型杂质，半导体衬底中的非淀粉化注入（PAI）区，其中PAI 区域包括端部范围（EOR）区域和半导体衬底中的间隙阻挡区域，其中间隙阻挡区域的深度大于LDD区域的深度但小于EOR区域的深度。

2. 发明申请

US20080242039A1 METHOD OF ENHANCING DOPANT ACTIVATION WITHOUT SUFFERING ADDITIONAL DOPANT DIFFUSION 有权
标题翻译：不增加添加剂掺合物增加钆激活的方法
公开(公告)号：US20080242039A1
公开(公告)日：2008-10-02
申请号：US11690869
申请日：2007-03-26
申请人： Keh-Chiang Ku , Chien-Hao Chen , Chun-Feng Nieh , Li-Ping Huang , Hsun Chang , Li-Ting Wang , Chih-Chiang Wang , Tze-Liang Lee
发明人： Keh-Chiang Ku , Chien-Hao Chen , Chun-Feng Nieh , Li-Ping Huang , Hsun Chang , Li-Ting Wang , Chih-Chiang Wang , Tze-Liang Lee
IPC分类号： H01L21/336
CPC分类号： H01L29/6659 , H01L21/26513 , H01L21/2658 , H01L21/2686 , H01L21/324 , H01L21/823814 , H01L21/823878
摘要： A method of enhancing dopant activation without suffering additional dopant diffusion, includes forming shallow and lightly-doped source/drain extension regions in a semiconductor substrate, performing a first anneal process on the source/drain extension regions, forming deep and heavily-doped source/drain regions in the substrate adjacent to the source/drain extension regions, and performing a second anneal process on source/drain regions. The first anneal process is a flash anneal process performed for a time of between about 1 millisecond and 3 milliseconds, and the second anneal process is a rapid thermal anneal process performed for a time of between about 1 second and 30 seconds.
摘要翻译：增加掺杂剂激活而不会受到额外的掺杂剂扩散的方法包括在半导体衬底中形成浅掺杂的和轻掺杂的源极/漏极扩展区，在源极/漏极延伸区上执行第一退火工艺，形成深和重掺杂的源/ 漏极区域，并且在源极/漏极区域上执行第二退火处理。第一退火工艺是在约1毫秒至3毫秒之间的时间内执行的闪光退火工艺，第二退火工艺是在约1秒至30秒之间进行的快速热退火工艺。

3. 发明申请

US20070284615A1 Ultra-shallow and highly activated source/drain extension formation using phosphorus 有权
标题翻译：使用磷的超浅和高活化的源/漏延伸形成
公开(公告)号：US20070284615A1
公开(公告)日：2007-12-13
申请号：US11521660
申请日：2006-09-15
申请人： Keh-Chiang Ku , Chun-Feng Nieh , Li-Ping Huang , Chih-Chiang Wang , Chien-Hao Chen , Hsun Chang , Li-Ting Wang , Tze-Liang Lee , Shih-Chang Chen
发明人： Keh-Chiang Ku , Chun-Feng Nieh , Li-Ping Huang , Chih-Chiang Wang , Chien-Hao Chen , Hsun Chang , Li-Ting Wang , Tze-Liang Lee , Shih-Chang Chen
IPC分类号： H01L29/739
CPC分类号： H01L21/26586 , H01L21/26506 , H01L21/26513 , H01L21/324 , H01L29/0847 , H01L29/665 , H01L29/6659 , H01L29/7833
摘要： A semiconductor device includes a gate stack over a semiconductor substrate, a lightly doped n-type source/drain (LDD) region in the semiconductor substrate and adjacent the gate stack wherein the LDD region comprises an n-type impurity, a heavily doped n-type source/drain (N+ S/D) region in the semiconductor substrate and adjacent the gate stack wherein the N+ S/D region comprises an n-type impurity, a pre-amorphized implantation (PAI) region in the semiconductor substrate wherein the PAI region comprises an end of range (EOR) region, and an interstitial blocker region in the semiconductor substrate wherein the interstitial blocker region has a depth greater than a depth of the LDD region but less than a depth of the EOR region.
摘要翻译：半导体器件包括在半导体衬底上的栅极堆叠，半导体衬底中的轻掺杂n型源极/漏极（LDD）区域并且邻近栅极堆叠，其中LDD区域包括n型杂质，重掺杂n- （N + S / D）区，其中N + S / D区包括n型杂质，半导体衬底中的非淀粉化注入（PAI）区，其中PAI 区域包括端部范围（EOR）区域和半导体衬底中的间隙阻挡区域，其中间隙阻挡区域的深度大于LDD区域的深度但小于EOR区域的深度。

4. 发明授权

US08273633B2 Method of enhancing dopant activation without suffering additional dopant diffusion 有权
标题翻译：增加掺杂剂激活而不会受到额外的掺杂剂扩散的方法
公开(公告)号：US08273633B2
公开(公告)日：2012-09-25
申请号：US11690869
申请日：2007-03-26
申请人： Keh-Chiang Kuo , Chien-Hao Chen , Chun-Feng Nieh , Li-Ping Huang , Hsun Chang , Li-Ting Wang , Chih-Chiang Wang , Tze-Liang Lee
发明人： Keh-Chiang Kuo , Chien-Hao Chen , Chun-Feng Nieh , Li-Ping Huang , Hsun Chang , Li-Ting Wang , Chih-Chiang Wang , Tze-Liang Lee
IPC分类号： H01L21/336
CPC分类号： H01L29/6659 , H01L21/26513 , H01L21/2658 , H01L21/2686 , H01L21/324 , H01L21/823814 , H01L21/823878
摘要： A method of enhancing dopant activation without suffering additional dopant diffusion, includes forming shallow and lightly-doped source/drain extension regions in a semiconductor substrate, performing a first anneal process on the source/drain extension regions, forming deep and heavily-doped source/drain regions in the substrate adjacent to the source/drain extension regions, and performing a second anneal process on source/drain regions. The first anneal process is a flash anneal process performed for a time of between about 1 millisecond and 3 milliseconds, and the second anneal process is a rapid thermal anneal process performed for a time of between about 1 second and 30 seconds.
摘要翻译：增加掺杂剂激活而不会受到额外的掺杂剂扩散的方法包括在半导体衬底中形成浅掺杂的和轻掺杂的源极/漏极扩展区，在源极/漏极延伸区上执行第一退火工艺，形成深和重掺杂的源/ 漏极区域，并且在源极/漏极区域上执行第二退火处理。第一退火工艺是在约1毫秒至3毫秒之间的时间内执行的闪光退火工艺，第二退火工艺是在约1秒至30秒之间进行的快速热退火工艺。

5. 发明申请

US20130322026A1 ELECTRONIC DEVICE 审中-公开
标题翻译：电子设备
公开(公告)号：US20130322026A1
公开(公告)日：2013-12-05
申请号：US13909112
申请日：2013-06-04
申请人： Yi-Chieh Huang , Chih-Chiang Wang , Ming-Wang Lin , Hui-Lian Chang
发明人： Yi-Chieh Huang , Chih-Chiang Wang , Ming-Wang Lin , Hui-Lian Chang
IPC分类号： H05K7/02
CPC分类号： H05K7/02 , G06F1/1613 , G06F3/016 , G06F3/03547
摘要： An electronic device of the invention includes a base and a touch-vibration module. The base has an opening. The touch-vibration module includes a supporting bracket, a mass balancing element, a vibrating unit and a touch unit. The supporting bracket is connected to the base at the opening of the base. The mass balancing element is disposed at the supporting bracket. The vibrating unit is disposed at the supporting bracket. The touch unit is disposed at the supporting bracket and the vibrating unit is located between the supporting bracket and the touch unit.
摘要翻译：本发明的电子设备包括基座和触摸振动模块。基地有一个开口。触摸振动模块包括支撑支架，质量平衡元件，振动单元和触摸单元。支撑托架在基座的开口处连接到基座。质量平衡元件设置在支撑托架上。振动单元设置在支撑托架上。触摸单元设置在支撑托架上，振动单元位于支撑支架和触摸单元之间。

6. 发明申请

US20130163188A1 ELECTRONIC DEVICE 审中-公开
标题翻译：电子设备
公开(公告)号：US20130163188A1
公开(公告)日：2013-06-27
申请号：US13719238
申请日：2012-12-19
申请人： Ping-Huei Lee , Chih-Chiang Wang , Pan-Jen Chen , Tsung-Han Lin , Ming-Wang Lin , Hui-Lian Chang , Yu-Hsuan Ku
发明人： Ping-Huei Lee , Chih-Chiang Wang , Pan-Jen Chen , Tsung-Han Lin , Ming-Wang Lin , Hui-Lian Chang , Yu-Hsuan Ku
IPC分类号： G06F1/16
CPC分类号： G06F1/1624 , G06F1/1616 , G06F1/1656
摘要： An electronic device including a first body, a driving component, and a connector module is provided. The first body includes a main portion and an edge portion, wherein the thickness of the edge portion is smaller than the thickness of the main portion, and the edge portion has an opening. The driving component and the connector module are slidably disposed in the first body and so that the driving component drives the connector module to move from the main portion to the edge portion and the connector module is exposed from the opening of the edge portion.
摘要翻译：提供了包括第一主体，驱动部件和连接器模块的电子装置。第一主体包括主要部分和边缘部分，其中边缘部分的厚度小于主要部分的厚度，并且边缘部分具有开口。驱动部件和连接器模块可滑动地设置在第一主体中，使得驱动部件驱动连接器模块从主体部分移动到边缘部分，并且连接器模块从边缘部分的开口露出。

7. 发明授权

US6129637A Golf practice device 失效
标题翻译：高尔夫练习器
公开(公告)号：US6129637A
公开(公告)日：2000-10-10
申请号：US298916
申请日：1999-04-26
申请人： Chih-Chiang Wang , Chih-Neng Wang
发明人： Chih-Chiang Wang , Chih-Neng Wang
IPC分类号： A63B69/36
CPC分类号： A63B69/3661 , A63B69/3655
摘要： A golf practice device comprised of a base having on the top surface a section of artificial turf and a positioning support. A rod is pivot mounted to the front end of the positioning support and the leading end of the rod is pivot mounted to a ball to form the directional control mount. The rod of the directional control mount is inserted such that the ball enters a threaded section, at the bottom end of which is the connection rod of a swivel mount having an internal spherical-shaped space, and until the threaded section is situated laterally against the ball of the direction control mount. This enables assembly to the swivel mount so that the ball of the direction control mount is contained in the swivel fitting of the swivel assembly. The swivel mount and the connection rod at the top and bottom ends of the swivel assembly are structurally coordinated with a golf ball at the bottom end of another rod forming the golf ball assembly. Following the assembly of the said structure, while the user is engaged in golf club swinging practice, in addition to providing for swinging practice, the invention herein offers increased practical performance by indicating to the user whether the golf club has hit the golf ball squarely or not and, furthermore, allows for the appropriate corrections.
摘要翻译：一种高尔夫练习装置，包括在顶面上具有人造草皮部分和定位支架的底座。杆被枢转安装到定位支撑件的前端，并且杆的前端枢转安装到球以形成方向控制支架。方向控制安装座的杆被插入，使得球进入螺纹部分，其底端是具有内部球形空间的旋转安装座的连接杆，直到螺纹部分横向对准球的方向控制安装。这使得能够组装到旋转安装座，使得方向控制座的球容纳在旋转组件的旋转接头中。在旋转组件的顶端和底端处的旋转安装座和连接杆在与形成高尔夫球组件的另一杆的底端处与高尔夫球结构地协调。在所述结构的组装之后，当使用者参与高尔夫球杆摆动练习时，除了提供摆动练习之外，本发明通过向用户指示高尔夫球杆是否正确地击中了高尔夫球，提供了增加的实践性能，或者不，并且还允许适当的更正。

8. 发明授权

US08354718B2 Semiconductor device including an arrangement for suppressing short channel effects 有权
标题翻译：包括用于抑制短信道效应的装置的半导体装置
公开(公告)号：US08354718B2
公开(公告)日：2013-01-15
申请号：US11751959
申请日：2007-05-22
申请人： Chih-Chiang Wang , Yi-Ming Sheu , Ying-Shiou Lin
发明人： Chih-Chiang Wang , Yi-Ming Sheu , Ying-Shiou Lin
IPC分类号： H01L21/02
CPC分类号： H01L29/1083 , H01L29/66636
摘要： An apparatus comprising a substrate of first dopant type and first dopant concentration; pocket regions in the substrate and having the first dopant type and a second dopant concentration greater than the first dopant concentration; a gate stack over the substrate and laterally between the pocket regions; first and second source/drain regions on opposing sides of the gate stack and vertically between the gate stack and the pocket regions, the first and second source/drain regions having a second dopant type opposite the first dopant type and a third dopant concentration; and third and fourth source/drain regions having the second dopant type and a fourth dopant concentration that is greater than the third dopant concentration, wherein the pocket regions are between the third and fourth source/drain regions, and the third and fourth source/drain regions are vertically between the first and second source/drain regions and a bulk portion of the substrate.
摘要翻译：一种装置，包括第一掺杂剂型和第一掺杂剂浓度的衬底; 并且具有大于第一掺杂剂浓度的第一掺杂剂类型和第二掺杂剂浓度; 在所述衬底上方的栅堆叠，并且在所述袋区域之间横向; 第一和第二源极/漏极区域在栅极堆叠的相对侧上并且垂直地在栅极堆叠层与凹穴区域之间，第一和第二源极/漏极区域具有与第一掺杂剂类型相反的第二掺杂剂类型和第三掺杂剂浓度; 以及具有大于第三掺杂剂浓度的第二掺杂剂类型和第四掺杂剂浓度的第三和第四源极/漏极区域，其中所述穴状区域在第三和第四源极/漏极区域之间，并且第三和第四源极/漏极区域在第一和第二源极/漏极区域之间以及基板的主体部分之间是垂直的。

9. 发明申请

US20130139355A1 HINGE MECHANISM AND FOLDABLE ELECTRONIC DEVICE 审中-公开
标题翻译：铰链机械和可折叠电子设备
公开(公告)号：US20130139355A1
公开(公告)日：2013-06-06
申请号：US13587926
申请日：2012-08-17
申请人： Jui-Yuan Lee , Hui-Lian Chang , Ming-Wang Lin , Chih-Chiang Wang , Hsin-Hsiang Shao , Chun-Wei Chang
发明人： Jui-Yuan Lee , Hui-Lian Chang , Ming-Wang Lin , Chih-Chiang Wang , Hsin-Hsiang Shao , Chun-Wei Chang
IPC分类号： E05D7/00 , E05D3/06
CPC分类号： H04M1/022 , G06F1/1681 , Y10T16/541
摘要： A hinge mechanism suitable for a foldable electronic device has a first body, a second body and a hinging-body. The hinge mechanism includes a first cradle, a second cradle, a pair of pivoting-shafts, a pair of position-limiting elements, a set of gears and a positioning element. The positioning-element is fixed to the hinging-body and structurally independent from the position-limiting elements, pivoted to the pivoting-shafts so as to be detachably assembled with the position-limiting elements. The first body rotates relatively to the hinging-body through the first cradle rotates the pivoting-shaft fixed to the first cradle relatively to the positioning element so as to rotate the set of gears, make the second cradle rotate the pivoting-shaft fixed to the second cradle relatively to the positioning-element and bring the second body for rotation relatively to the hinging-body. Additionally, a foldable electronic device is also provided.
摘要翻译：适用于可折叠电子装置的铰链机构具有第一主体，第二主体和铰链主体。铰链机构包括第一支架，第二支架，一对转动轴，一对位置限制元件，一组齿轮和定位元件。定位元件固定在铰接体上，结构上独立于位置限制元件，枢转到枢转轴，以便与位置限制元件可拆卸地组装。第一主体通过第一托架相对于铰接体旋转，相对于定位元件旋转固定到第一支架的枢转轴，以使该组齿轮旋转，使得第二托架将枢转轴旋转固定到相对于定位元件的第二支架，并使第二主体相对于铰接体旋转。此外，还提供了可折叠的电子设备。

10. 发明申请

US20100179098A1 FUROST-5-ENE-3, 22, 26-TRIOL GLYCOSIDE COMPOUND FOR PREVENTING AND TREATMENT CANCER 审中-公开
标题翻译：用于预防和治疗癌症的FUROST-5-ENE-3,22,26-三聚氰尿酸化合物
公开(公告)号：US20100179098A1
公开(公告)日：2010-07-15
申请号：US12440273
申请日：2006-09-07
申请人： Shoei-Sheng Lee , Ming-Yang Lai , Chien-Kuang Chen , Chih-Chiang Wang
发明人： Shoei-Sheng Lee , Ming-Yang Lai , Chien-Kuang Chen , Chih-Chiang Wang
IPC分类号： A61K31/7048 , A61P35/00
CPC分类号： A61K31/7048
摘要： A pharmaceutical composition for preventing and treating cancer comprising furost-5-ene-3,22,26-triol glycoside, which can be used to prevent and treat cancer by promoting apoptosis.
摘要翻译：一种用于预防和治疗癌症的药物组合物，其包含呋喃葡萄糖-5-烯-3,22,26-三醇糖苷，其可用于通过促进细胞凋亡来预防和治疗癌症。

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