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1. 发明授权

US5287019A ECL to CMOS level conversion circuit 失效
标题翻译： ECL到CMOS电平转换电路
公开(公告)号：US5287019A
公开(公告)日：1994-02-15
申请号：US788369
申请日：1991-11-06
申请人： Kazuyuki Nonaka , Shinji Saito , Tetsuya Aisaka , Takehiro Akiyama , Kouzi Takekawa
发明人： Kazuyuki Nonaka , Shinji Saito , Tetsuya Aisaka , Takehiro Akiyama , Kouzi Takekawa
IPC分类号： H03K19/00 , H03K19/0175 , H03K19/018 , H03K19/092 , H03K3/01
CPC分类号： H03K19/0016 , H03K19/017527 , H03K19/01812
摘要： A level conversion circuit includes an ECL logic circuit including a current switch circuit having first and second transistors, each of the transistors having an emitter coupled to each other and at least one thereof receiving an input signal of ECL logic level, and an output transistor coupled to a collector of at least one of the first and second transistors; a current control circuit including a current mirror circuit having third and fourth transistors, at least one of the transistors being coupled to an output end of the output transistor, and controlling a current flowing through the output to thereby carry out a level conversion of a signal at the output end; and a switch circuit operative coupled to the current control circuit. The switch circuit responds to a control signal and thus controls a supply of a current or a break thereof from the output transistor to the current control circuit. As a result, it is possible to decrease power dissipation in the present level conversion circuit without spoiling high speed operation thereof in a stand-by state of an apparatus or system to which it is applied.
摘要翻译：电平转换电路包括ECL逻辑电路，其包括具有第一和第二晶体管的电流开关电路，每个晶体管具有彼此耦合的发射极，并且其至少一个接收ECL逻辑电平的输入信号，以及耦合的输出晶体管耦合到所述第一和第二晶体管中的至少一个晶体管的集电极; 电流控制电路，包括具有第三和第四晶体管的电流镜电路，至少一个晶体管耦合到输出晶体管的输出端，并且控制流过输出的电流，从而执行信号的电平转换在输出端; 以及可操作地耦合到电流控制电路的开关电路。开关电路响应于控制信号，从而控制从输出晶体管到电流控制电路的电流或断路的供应。结果，可以在其应用的装置或系统的待机状态下降低当前电平转换电路中的功率消耗而不破坏其高速操作。

2. 发明授权

US5410571A PLL frequency synthesizer circuit 失效
标题翻译： PLL频率合成器电路
公开(公告)号：US5410571A
公开(公告)日：1995-04-25
申请号：US121546
申请日：1993-09-16
申请人： Masayuki Yonekawa , Takehiro Akiyama , Shinji Saito , Tetsuya Aisaka , Minoru Takagi
发明人： Masayuki Yonekawa , Takehiro Akiyama , Shinji Saito , Tetsuya Aisaka , Minoru Takagi
IPC分类号： H03L7/089 , H03L7/095 , H03L7/107 , H03L7/183 , H03D3/24
CPC分类号： H03L7/107 , H03L7/0891 , H03L7/0898 , H03L7/095 , H03L7/183 , Y10S331/02
摘要： A reference frequency divider divides a clock signal into a reference frequency signal, and outputs it. A comparison frequency divider circuit divides an output signal from a voltage controlled oscillator, and outputs it as a comparison signal. The reference signal and comparison signal are coupled to a phase comparator. The phase comparator detects the phase difference between the reference signal and comparison signal, and outputs a phase difference signal. A charge pump outputs a voltage signal in response to the phase difference signal from the phase comparator. A low pass filter smooths out the voltage signal from the charge pump to remove the high frequency components, and outputs a controlled voltage signal. A voltage controlled oscillator outputs an output signal with the frequency relating to the voltage value of the controlled voltage signal from the low pass filter. A frequency difference determining circuit compares the reference signal with the comparison signal. The circuit outputs a signal indicative of the frequency locked when the frequency difference is within the preset range, and outputs a signal indicative of the frequency unlocked when the difference of the frequency exceeds the preset range.
摘要翻译：参考分频器将时钟信号分频为参考频率信号，并将其输出。比较分频器电路分压来自压控振荡器的输出信号，并将其作为比较信号输出。参考信号和比较信号耦合到相位比较器。相位比较器检测参考信号和比较信号之间的相位差，并输出相位差信号。电荷泵响应于来自相位比较器的相位差信号输出电压信号。低通滤波器平滑电荷泵的电压信号，去除高频分量，并输出受控电压信号。压控振荡器以与低通滤波器的受控电压信号的电压值相关的频率输出输出信号。频率差确定电路将参考信号与比较信号进行比较。当频率差在预设范围内时，电路输出指示频率被锁定的信号，并且当频率差超过预设范围时输出表示频率被解锁的信号。

3. 发明授权

US4897560A Semiconductor integrated circuit with reduced power consumption 失效
标题翻译：半导体集成电路降低功耗
公开(公告)号：US4897560A
公开(公告)日：1990-01-30
申请号：US190745
申请日：1988-05-05
申请人： Shinji Saito , Kazuyuki Nonaka , Hideji Sumi , Takehiro Akiyama
发明人： Shinji Saito , Kazuyuki Nonaka , Hideji Sumi , Takehiro Akiyama
IPC分类号： H03L7/18 , H03J5/02 , H03K3/2885 , H03K17/00 , H03K17/60 , H03K19/00 , H03K19/086
CPC分类号： H03J5/0272 , H03K17/603 , H03K3/2885 , H03K2217/0036
摘要： A semiconductor integrated circuit includes a logic circuit which has first and second transistors constituting an emitter coupled transistor pair and a third transistor which is used as a constant current source, a bias circuit which includes a fourth transistor having an emitter from which a first predetermined voltage is supplied to a base of the third transistor and an impedance having one end coupled to a first power source and another end coupled to a base of the fourth transistor to supply a second predetermined voltage thereto, and a clamping circuit. The clamping circuit is OFF and does not perform a clamping operation with respect to the base of the fourth transistor when the entire semiconductor integrated circuit needs to operate. When the entire semiconductor integrated circuit does not need to operate, the clamping circuit is ON to clamp the base potential of the fourth transistor so as to reduce the power consumption of the semiconductor integrate circuit.

4. 发明授权

US09070487B2 Conductive member 有权
标题翻译：导电部件
公开(公告)号：US09070487B2
公开(公告)日：2015-06-30
申请号：US13977968
申请日：2011-12-26
申请人： Takashi Kayamoto , Shinji Saito , Yuichiro Yamauchi
发明人： Takashi Kayamoto , Shinji Saito , Yuichiro Yamauchi
IPC分类号： B32B15/00 , H01B5/02 , C23C24/04 , H01B1/02
CPC分类号： H01B5/02 , C23C24/04 , H01B1/02
摘要： A conductive member disposed as a power supply line and the like includes: a first conductive material and a second conductive material, at least one of which includes a conductive material having electrical resistance lower than that of aluminum; and a metal film formed by depositing powder including a metal, which is accelerated together with a gas and sprayed, in a sold state, onto a surface of a butting part, where the first conductive material and the second conductive material are butted against each other.
摘要翻译：设置为电源线等的导电部件包括：第一导电材料和第二导电材料，其至少一个包括具有比铝的电阻低的导电材料; 以及金属膜，其通过沉积包括金属的粉末形成，所述金属与气体一起被加速并以销售状态喷射到对接部分的表面上，其中所述第一导电材料和所述第二导电材料彼此抵接。

5. 发明授权

US08806969B2 Ceramic member, probe holder, and method of manufacturing ceramic member 有权
标题翻译：陶瓷构件，探针架，以及陶瓷构件的制造方法
公开(公告)号：US08806969B2
公开(公告)日：2014-08-19
申请号：US12309537
申请日：2007-07-23
申请人： Shinya Miyaji , Shinji Saito
发明人： Shinya Miyaji , Shinji Saito
IPC分类号： C03C10/00 , G01D21/00
CPC分类号： G01R3/00 , C04B35/20 , C04B35/645 , C04B2235/3418 , C04B2235/3427 , C04B2235/652 , C04B2235/656 , C04B2235/658 , C04B2235/6581 , C04B2235/787 , C04B2235/9607 , G01R1/07314 , G01R1/07371 , G01R1/44
摘要： To provide a ceramic member having a thermal expansion coefficient close to that of silicon and has satisfactory workability, a probe holder formed by using this ceramic member, and a method of manufacturing the ceramic member. For this purpose, at least mica and silicon dioxide are mixed and an external force oriented in one direction is caused to act on this mixed mixture to sinter the mixture. It is more preferable that, in the mixture, a volume content of the mica is 70 to 90 volume % and a volume content of the silicon dioxide is 10 to 30 volume %.
摘要翻译：为了提供具有接近于硅的热膨胀系数的陶瓷构件，并且具有令人满意的可加工性，通过使用该陶瓷构件形成的探针保持架以及陶瓷构件的制造方法。为此目的，至少将云母和二氧化硅混合，并使在一个方向上取向的外力作用于该混合混合物以烧结混合物。更优选的是，在混合物中，云母的体积含量为70〜90体积％，二氧化硅的体积含量为10〜30体积％。

6. 发明授权

US08520167B2 Liquid crystal display device 失效
标题翻译：液晶显示装置
公开(公告)号：US08520167B2
公开(公告)日：2013-08-27
申请号：US13038728
申请日：2011-03-02
申请人： Shinji Saito , Yasushi Hattori , Shinya Nunoue
发明人： Shinji Saito , Yasushi Hattori , Shinya Nunoue
IPC分类号： G02F1/1335 , F21V7/00 , F21V11/00
CPC分类号： G02B6/0055 , G02B5/0215 , G02B5/0231 , G02B5/0284 , G02B6/0096 , G02F1/133606 , G02F1/133615
摘要： A liquid crystal display device of an embodiment has: a semiconductor laser diode emitting a first laser beam; a first reflecting unit configured to reflect the first laser beam and form a second laser beam having a one-dimensionally spread distribution; and a second reflecting unit configured to reflect the second laser beam and form a third laser beam having a two-dimensionally spread distribution. The device also has: an optical switch using liquid crystal, the optical switch being configured to control passage and blocking of the third laser beam; and a first scattering unit scattering the third laser beam.
摘要翻译：实施例的液晶显示装置具有：发射第一激光束的半导体激光二极管; 第一反射单元，被配置为反射第一激光束并形成具有一维扩展分布的第二激光束; 以及第二反射单元，被配置为反射第二激光束并形成具有二维扩散分布的第三激光束。该装置还具有：使用液晶的光开关，该光开关被配置为控制第三激光束的通过和阻塞; 以及散射第三激光束的第一散射单元。

7. 发明授权

US08456010B2 Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：US08456010B2
公开(公告)日：2013-06-04
申请号：US13035069
申请日：2011-02-25
申请人： Shinji Saito , Maki Sugai , Eiji Muramoto , Shinya Nunoue
发明人： Shinji Saito , Maki Sugai , Eiji Muramoto , Shinya Nunoue
IPC分类号： H01L23/482
CPC分类号： H01L33/405 , B82Y20/00 , H01L33/32 , H01L2933/0016 , H01S5/0425 , H01S5/22 , H01S5/2214 , H01S5/3063 , H01S5/34333
摘要： A semiconductor device of an embodiment includes: a semiconductor layer made of p-type nitride semiconductor; an oxide layer formed on the semiconductor layer, the oxide layer being made of a polycrystalline nickel oxide, and the oxide layer having a thickness of 3 nm or less; and a metal layer formed on the oxide layer.
摘要翻译：实施例的半导体器件包括：由p型氮化物半导体制成的半导体层; 形成在所述半导体层上的氧化物层，所述氧化物层由多晶氧化镍构成，所述氧化物层的厚度为3nm以下; 以及形成在氧化物层上的金属层。

8. 发明授权

US08354681B2 Semiconductor light-emitting element and manufacturing method thereof 有权
标题翻译：半导体发光元件及其制造方法
公开(公告)号：US08354681B2
公开(公告)日：2013-01-15
申请号：US11689246
申请日：2007-03-21
申请人： Yasushi Hattori , Shinya Nunoue , Shinji Saito , Genichi Hatakoshi
发明人： Yasushi Hattori , Shinya Nunoue , Shinji Saito , Genichi Hatakoshi
IPC分类号： H01L33/00
CPC分类号： H01L33/20 , H01L33/382 , H01L33/46 , H01L33/60 , H01L2224/48091 , H01L2224/73265 , H01L2224/8592 , H01L2924/00014
摘要： A semiconductor light-emitting element including a semiconductor substrate having a first surface and second surface faced on the opposite side of the first surface, the semiconductor substrate having a recessed portion formed in the first surface, and the recessed portion having a V-shaped cross-section, a reflecting layer formed on an inner surface of the recessed portion, a first electrode formed on the reflecting layer, a light-emitting layer formed on the second surface, and a second electrode formed on the light-emitting layer.
摘要翻译：一种半导体发光元件，包括具有第一表面和第二表面的半导体衬底，所述第一表面和第二表面面对所述第一表面的相对侧，所述半导体衬底具有形成在所述第一表面中的凹部，所述凹部具有V形十字形成在所述凹部的内表面上的反射层，形成在所述反射层上的第一电极，形成在所述第二表面上的发光层，以及形成在所述发光层上的第二电极。

9. 发明授权

US08348468B2 Light emitting device 有权
标题翻译：发光装置
公开(公告)号：US08348468B2
公开(公告)日：2013-01-08
申请号：US12876738
申请日：2010-09-07
申请人： Yasushi Hattori , Shinji Saito , Shinya Nunoue , Masaki Tohyama
发明人： Yasushi Hattori , Shinji Saito , Shinya Nunoue , Masaki Tohyama
IPC分类号： F21V11/02
CPC分类号： F21K9/64 , F21K9/232 , F21V3/00 , F21Y2101/00 , F21Y2115/30
摘要： An embodiment of the invention provides a light emitting device in which a semiconductor laser diode is used as a light source to emit visible light in a wide range. The light emitting device includes a semiconductor laser diode that emits a laser beam; and a luminescent component that is provided while separated from the semiconductor laser diode and absorbs the laser beam to emit the visible light. In the light emitting device, the luminescent component includes an optical path through which the laser beam is incident to a center portion of the luminescent component.
摘要翻译：本发明的实施例提供了一种发光器件，其中使用半导体激光二极管作为光源来发射宽范围的可见光。发光器件包括发射激光束的半导体激光二极管; 以及与半导体激光二极管分离并吸收激光束以发出可见光的发光元件。在发光装置中，发光部件包括激光束入射到发光部件的中心部分的光路。

10. 发明申请

US20120007113A1 SEMICONDUCTOR LIGHT EMITTING DEVICE 有权
标题翻译：半导体发光器件
公开(公告)号：US20120007113A1
公开(公告)日：2012-01-12
申请号：US13032907
申请日：2011-02-23
申请人： Jongil Hwang , Shinji Saito , Maki Sugai , Rei Hashimoto , Yasushi Hattori , Masaki Tohyama , Shinya Nunoue
发明人： Jongil Hwang , Shinji Saito , Maki Sugai , Rei Hashimoto , Yasushi Hattori , Masaki Tohyama , Shinya Nunoue
IPC分类号： H01L33/26
CPC分类号： H01L33/06 , H01L33/32
摘要： According to one embodiment, a semiconductor light emitting device includes an n-type semiconductor layer, a p-type semiconductor layer, a well layer, a barrier layer, an Al-containing layer, and an intermediate layer. The p-type semiconductor layer is provided on a side of [0001] direction of the n-type semiconductor layer. The well layer, the barrier layer, the Al-containing layer and the intermediate layer are disposed between the n-type semiconductor layer and the p-type semiconductor layer subsequently. The Al-containing layer has a larger band gap energy than the barrier layer, a smaller lattice constant than the n-type semiconductor layer, and a composition of Alx1Ga1-x1-y1Iny1N. The intermediate layer has a larger band gap energy than the well layer, and has a first portion and a second portion provided between the first portion and the p-type semiconductor layer. A band gap energy of the first portion is smaller than that of the second portion.
摘要翻译：根据一个实施例，半导体发光器件包括n型半导体层，p型半导体层，阱层，阻挡层，含Al层和中间层。 p型半导体层设置在n型半导体层的[0001]方向的一侧。阱层，阻挡层，含Al层和中间层随后设置在n型半导体层和p型半导体层之间。含Al层具有比阻挡层更大的带隙能量，比n型半导体层更小的晶格常数以及Al x Ga 1-x 1-y 1 In y N 1的组成。中间层具有比阱层更大的带隙能量，并且具有设置在第一部分和p型半导体层之间的第一部分和第二部分。第一部分的带隙能量小于第二部分的带隙能量。

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