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1. 发明授权

US07928804B2 Power amplifier 有权
标题翻译：功率放大器
公开(公告)号：US07928804B2
公开(公告)日：2011-04-19
申请号：US12612755
申请日：2009-11-05
申请人： Kazuya Yamamoto , Satoshi Suzuki , Takao Haruna , Takao Moriwaki
发明人： Kazuya Yamamoto , Satoshi Suzuki , Takao Haruna , Takao Moriwaki
IPC分类号： H03F3/16
CPC分类号： H01L29/778 , H01L27/0605 , H01L27/0623 , H01L29/0826 , H01L29/165 , H01L29/7371 , H03F3/195 , H03F2200/18 , H03F2200/411
摘要： A power amplifier includes: a semiconductor substrate; a preceding-stage amplifying device on the semiconductor substrate, amplifying an input signal; a following-stage amplifying device on the semiconductor substrate, amplifying an output signal of the preceding-stage amplifying device; and an inter-stage matching circuit connecting the preceding-stage amplifying device to the following-stage amplifying device. The preceding-stage amplifying device has a first field effect transistor; the following-stage amplifying device has a heterojunction bipolar transistor; and the inter-stage matching circuit has a capacitance galvanically separating the output terminal of the preceding-stage amplifying device from the input terminal of the following-stage amplifying device.
摘要翻译：功率放大器包括：半导体衬底; 在半导体衬底上的前级放大装置，放大输入信号; 在半导体衬底上的后级放大装置，放大前级放大装置的输出信号; 以及将前级放大装置连接到后级放大装置的级间匹配电路。前级放大装置具有第一场效应晶体管; 后级放大装置具有异质结双极晶体管; 并且级间匹配电路具有将前级放大装置的输出端子与后级放大装置的输入端子电流分离的电容。

2. 发明申请

US20100301944A1 POWER AMPLIFIER 有权
标题翻译：功率放大器
公开(公告)号：US20100301944A1
公开(公告)日：2010-12-02
申请号：US12612755
申请日：2009-11-05
申请人： Kazuya Yamamoto , Satoshi Suzuki , Takao Haruna , Takao Moriwaki
发明人： Kazuya Yamamoto , Satoshi Suzuki , Takao Haruna , Takao Moriwaki
IPC分类号： H03F3/16
CPC分类号： H01L29/778 , H01L27/0605 , H01L27/0623 , H01L29/0826 , H01L29/165 , H01L29/7371 , H03F3/195 , H03F2200/18 , H03F2200/411
摘要： A power amplifier includes: a semiconductor substrate; a preceding-stage amplifying device on the semiconductor substrate, amplifying an input signal; a following-stage amplifying device on the semiconductor substrate, amplifying an output signal of the preceding-stage amplifying device; and an inter-stage matching circuit connecting the preceding-stage amplifying device to the following-stage amplifying device. The preceding-stage amplifying device has a first field effect transistor; the following-stage amplifying device has a heterojunction bipolar transistor; and the inter-stage matching circuit has a capacitance galvanically separating the output terminal of the preceding-stage amplifying device from the input terminal of the following-stage amplifying device.
摘要翻译：功率放大器包括：半导体衬底; 在半导体衬底上的前级放大装置，放大输入信号; 在半导体衬底上的后级放大装置，放大前级放大装置的输出信号; 以及将前级放大装置连接到后级放大装置的级间匹配电路。前级放大装置具有第一场效应晶体管; 后级放大装置具有异质结双极晶体管; 并且级间匹配电路具有将前级放大装置的输出端子与后级放大装置的输入端子电流分离的电容。

3. 发明授权

US07605648B2 Power amplifier 有权
标题翻译：功率放大器
公开(公告)号：US07605648B2
公开(公告)日：2009-10-20
申请号：US11947831
申请日：2007-11-30
申请人： Kazuya Yamamoto , Satoshi Suzuki , Tomoyuki Asada , Takayuki Matsuzuka , Teruyuki Shimura
发明人： Kazuya Yamamoto , Satoshi Suzuki , Tomoyuki Asada , Takayuki Matsuzuka , Teruyuki Shimura
IPC分类号： H03F1/14
CPC分类号： H03F1/0277 , H03F1/0261 , H03F1/30 , H03F3/195 , H03F2200/411 , H03F2200/451
摘要： A power amplifier according to the present invention is operated by switching a main power amplifier and a subsidiary power amplifier. The idle current of the subsidiary power amplifier is smaller than the idle current of the main power amplifier. Each of the main power amplifier and the subsidiary power amplifier has a former amplification element for amplifying RF signals, a latter amplification element for amplifying output signals from the former amplification element, a former bias circuit for driving the former amplification elements, and a latter bias circuit for driving the latter amplification elements, respectively. The interval between the latter amplification element of the main power amplifier and the latter amplification element of the subsidiary power amplifier is not more than 100 μm. The interval between the latter amplification element of the main power amplifier and the latter bias circuit of the subsidiary power amplifier is not less than 200 μm.
摘要翻译：根据本发明的功率放大器通过切换主功率放大器和辅助功率放大器来操作。辅助功率放大器的空闲电流小于主功率放大器的空闲电流。每个主功率放大器和辅助功率放大器具有用于放大RF信号的前置放大元件，用于放大来自前一放大元件的输出信号的后一放大元件，用于驱动前一放大元件的前一偏置电路，以及后一偏置电路分别用于驱动后面的放大元件。主功率放大器的后一放大元件与辅助功率放大器的后一放大元件之间的间隔不大于100um。主功率放大器的后一个放大元件与辅助功率放大器的后一个偏置电路之间的间隔不小于200μm。

4. 发明申请

US20090027130A1 POWER AMPLIFIER 有权
标题翻译：功率放大器
公开(公告)号：US20090027130A1
公开(公告)日：2009-01-29
申请号：US11947831
申请日：2007-11-30
申请人： Kazuya Yamamoto , Satoshi Suzuki , Tomoyuki Asada , Takayuki Matsuzuka , Teruyuki Shimura
发明人： Kazuya Yamamoto , Satoshi Suzuki , Tomoyuki Asada , Takayuki Matsuzuka , Teruyuki Shimura
IPC分类号： H03F3/68 , H03F1/14
CPC分类号： H03F1/0277 , H03F1/0261 , H03F1/30 , H03F3/195 , H03F2200/411 , H03F2200/451
摘要： A power amplifier according to the present invention is operated by switching a main power amplifier and a subsidiary power amplifier. The idle current of the subsidiary power amplifier is smaller than the idle current of the main power amplifier. Each of the main power amplifier and the subsidiary power amplifier has a former amplification element for amplifying RF signals, a latter amplification element for amplifying output signals from the former amplification element, a former bias circuit for driving the former amplification elements, and a latter bias circuit for driving the latter amplification elements, respectively. The interval between the latter amplification element of the main power amplifier and the latter amplification element of the subsidiary power amplifier is not more than 100 μm. The interval between the latter amplification element of the main power amplifier and the latter bias circuit of the subsidiary power amplifier is not less than 200 μm.
摘要翻译：根据本发明的功率放大器通过切换主功率放大器和辅助功率放大器来操作。辅助功率放大器的空闲电流小于主功率放大器的空闲电流。每个主功率放大器和辅助功率放大器具有用于放大RF信号的前置放大元件，用于放大来自前一放大元件的输出信号的后一放大元件，用于驱动前一放大元件的前一偏置电路，以及后一偏置电路分别用于驱动后面的放大元件。主功率放大器的后一放大元件与辅助功率放大器的后一放大元件之间的间隔不大于100um。主功率放大器的后一个放大元件与辅助功率放大器的后一个偏置电路之间的间隔不小于200μm。

5. 发明申请

US20050030106A1 Output overvoltage protection circuit for power amplifier 有权
标题翻译：功率放大器输出过压保护电路
公开(公告)号：US20050030106A1
公开(公告)日：2005-02-10
申请号：US10889059
申请日：2004-07-13
申请人： Kazuya Yamamoto , Teruyuki Shimura , Tomoyuki Asada , Satoshi Suzuki
发明人： Kazuya Yamamoto , Teruyuki Shimura , Tomoyuki Asada , Satoshi Suzuki
IPC分类号： H03F1/52 , H03F3/21
CPC分类号： H03F1/52
摘要： Disclosed is an output overvoltage protection circuit for a power amplifier having a plurality of stages, which comprises a monitor circuit for monitoring an output overvoltage of an output transistor in the final stage of the power amplifier and allowing a current to flow therethrough in response to the monitored output overvoltage, and a current mirror circuit for supplying a current proportional to the current from the monitor circuit in such a manner that the base bias of the first-stage transistor of the power amplifier is reduced in response to the current supplied from the current mirror circuit, to reduce the output of the final-stage output transistor.
摘要翻译：公开了一种用于具有多级的功率放大器的输出过电压保护电路，其包括监视电路，用于监视功率放大器的最后级中的输出晶体管的输出过电压，并且允许电流响应于监控的输出过电压，以及电流镜电路，用于提供与来自监视器电路的电流成比例的电流，使得功率放大器的第一级晶体管的基极偏置响应于从电流提供的电流而减小镜像电路，以减少最终级输出晶体管的输出。

6. 发明授权

US06278328B1 Power amplifier 有权
标题翻译：功率放大器
公开(公告)号：US06278328B1
公开(公告)日：2001-08-21
申请号：US09443372
申请日：1999-11-19
申请人： Kazuya Yamamoto , Akira Inoue , Satoshi Suzuki , Tomoyuki Asada
发明人： Kazuya Yamamoto , Akira Inoue , Satoshi Suzuki , Tomoyuki Asada
IPC分类号： H02H720
CPC分类号： H03F1/52
摘要： While minimizing any increase in chip size and without incurring a loss in performance or operating characteristic under normal operating voltage conditions, a power amplifier protection circuit effectively prevents breakdown of power amplifying transistors resulting from output load fluctuations during operation with an overvoltage supply. The protection circuit includes a gate circuit electrically connected between the collector and base of at least the last-stage transistor in a power amplifier including transistors connected in stages. The gate circuit passes a feedback current to the base electrode of the protected transistor when a voltage exceeding a specific level is applied to the collector of the protected transistor.
摘要翻译：尽可能减小芯片尺寸的任何增加，并且在正常工作电压条件下不会导致性能或工作特性的损失，功率放大器保护电路可以有效地防止在使用过压电源的工作过程中输出负载波动导致的功率放大晶体管的击穿。保护电路包括电路连接在功率放大器中的至少最后一级晶体管的集电极和基极之间的栅极电路，该功率放大器包括分级连接的晶体管。当超过特定电平的电压被施加到受保护晶体管的集电极时，门电路将反馈电流传递到受保护晶体管的基极。

7. 发明授权

US08217722B2 Power amplifier 有权
标题翻译：功率放大器
公开(公告)号：US08217722B2
公开(公告)日：2012-07-10
申请号：US13079046
申请日：2011-04-04
申请人： Kazuya Yamamoto , Miyo Miyashita , Satoshi Suzuki , Takayuki Matsuzuka
发明人： Kazuya Yamamoto , Miyo Miyashita , Satoshi Suzuki , Takayuki Matsuzuka
IPC分类号： H03F3/20
CPC分类号： H03F3/195 , H03F1/0277 , H03F3/189 , H03F3/245 , H03F3/72 , H03F2200/27 , H03F2200/411 , H03F2203/7206 , H03F2203/7236 , H03G1/0088
摘要： A power amplifier comprises: an amplifying transistor for amplifying an input signal; a reference voltage generating circuit which generates a reference voltage; a bias circuit generating a bias voltage based on the reference voltage and supplying the bias voltage to the amplifying transistor; and a booster elevating an enable voltage input from outside and outputting the enable voltage. The reference voltage generating circuit is turned ON/OFF in correspondence with an output voltage of the booster. The booster includes: an enable terminal to which the enable voltage is applied; a power source terminal connected to a power source; a transistor having a control electrode connected to the enable terminal, a first electrode connected to the power source terminal, and a second electrode that is grounded; and a FET resistor connected between the first electrode of the transistor and the power source terminal. A gate electrode of the FET resistor is open.
摘要翻译：功率放大器包括：放大晶体管，用于放大输入信号; 产生参考电压的基准电压产生电路; 偏置电路，基于所述参考电压产生偏置电压，并将所述偏置电压提供给所述放大晶体管; 并且升压器提升从外部输入的使能电压并输出使能电压。基准电压发生电路与增压器的输出电压对应地接通/断开。升压器包括：施加使能电压的使能端子; 连接到电源的电源端子; 具有连接到使能端子的控制电极的晶体管，连接到电源端子的第一电极和接地的第二电极; 以及连接在晶体管的第一电极和电源端子之间的FET电阻器。 FET电阻的栅电极断开。

8. 发明授权

US07145397B2 Output overvoltage protection circuit for power amplifier 有权
标题翻译：功率放大器输出过压保护电路
公开(公告)号：US07145397B2
公开(公告)日：2006-12-05
申请号：US10889059
申请日：2004-07-13
申请人： Kazuya Yamamoto , Teruyuki Shimura , Tomoyuki Asada , Satoshi Suzuki
发明人： Kazuya Yamamoto , Teruyuki Shimura , Tomoyuki Asada , Satoshi Suzuki
IPC分类号： H03F1/52
CPC分类号： H03F1/52
摘要： Disclosed is an output overvoltage protection circuit for a power amplifier having a plurality of stages, which comprises a monitor circuit for monitoring an output overvoltage of an output transistor in the final stage of the power amplifier and allowing a current to flow therethrough in response to the monitored output overvoltage, and a current mirror circuit for supplying a current proportional to the current from the monitor circuit in such a manner that the base bias of the first-stage transistor of the power amplifier is reduced in response to the current supplied from the current mirror circuit, to reduce the output of the final-stage output transistor.
摘要翻译：公开了一种用于具有多级的功率放大器的输出过电压保护电路，其包括监视电路，用于监视功率放大器的最后级中的输出晶体管的输出过电压，并且允许电流响应于监控的输出过电压，以及电流镜电路，用于提供与来自监视器电路的电流成比例的电流，使得功率放大器的第一级晶体管的基极偏置响应于从电流提供的电流而减小镜像电路，以减少最终级输出晶体管的输出。

9. 发明授权

US06838941B2 Multi-band power amplifier 失效
标题翻译：多波段功率放大器
公开(公告)号：US06838941B2
公开(公告)日：2005-01-04
申请号：US10309239
申请日：2002-12-04
申请人： Kazuya Yamamoto , Satoshi Suzuki
发明人： Kazuya Yamamoto , Satoshi Suzuki
IPC分类号： H01L21/331 , H01L21/8222 , H01L27/06 , H01L29/73 , H03F1/30 , H03F1/52 , H03F3/21 , H03F3/213 , H03F3/60 , H03F3/72 , H03F3/68
CPC分类号： H03F3/211 , H03F1/302 , H03F3/602 , H03F3/72 , H03F2200/111 , H03F2200/429 , H03F2203/7209
摘要： A final-stage power amplification transistor is formed of unit transistors arranged in a mixed manner in a region in which the final output amplification transistors for a multi-band power amplifier is formed. Furthermore, an inductance element is connected between output signal lines to which the final output stage transistors are coupled. Thus, the final-stage transistors in a dual band power amplifier can be made free from current concentration due to heat generation without impairing inter-band isolation.
摘要翻译：最后阶段的功率放大晶体管由在形成多频带功率放大器的最终输出放大晶体管的区域中以混合方式排列的单元晶体管形成。此外，电感元件连接在最终输出级晶体管耦合到的输出信号线之间。因此，双频带功率放大器中的最后级晶体管可以由于发热而不受电流集中而不损害带间隔离。

10. 发明申请

US20120062321A1 POWER AMPLIFIER 有权
标题翻译：功率放大器
公开(公告)号：US20120062321A1
公开(公告)日：2012-03-15
申请号：US13079046
申请日：2011-04-04
申请人： Kazuya Yamamoto , Miyo Miyashita , Satoshi Suzuki , Takayuki Matsuzuka
发明人： Kazuya Yamamoto , Miyo Miyashita , Satoshi Suzuki , Takayuki Matsuzuka
IPC分类号： H03F3/20
CPC分类号： H03F3/195 , H03F1/0277 , H03F3/189 , H03F3/245 , H03F3/72 , H03F2200/27 , H03F2200/411 , H03F2203/7206 , H03F2203/7236 , H03G1/0088
摘要： A power amplifier comprises: an amplifying transistor for amplifying an input signal; a reference voltage generating circuit which generates a reference voltage; a bias circuit generating a bias voltage based on the reference voltage and supplying the bias voltage to the amplifying transistor; and a booster elevating an enable voltage input from outside and outputting the enable voltage. The reference voltage generating circuit is turned ON/OFF in correspondence with an output voltage of the booster. The booster includes: an enable terminal to which the enable voltage is applied; a power source terminal connected to a power source; a transistor having a control electrode connected to the enable terminal, a first electrode connected to the power source terminal, and a second electrode that is grounded; and a FET resistor connected between the first electrode of the transistor and the power source terminal. A gate electrode of the FET resistor is open.
摘要翻译：功率放大器包括：放大晶体管，用于放大输入信号; 产生参考电压的基准电压产生电路; 偏置电路，基于所述参考电压产生偏置电压，并将所述偏置电压提供给所述放大晶体管; 并且升压器提升从外部输入的使能电压并输出使能电压。参考电压产生电路对应于升压器的输出电压而导通/截止。升压器包括：施加使能电压的使能端子; 连接到电源的电源端子; 具有连接到使能端子的控制电极的晶体管，连接到电源端子的第一电极和接地的第二电极; 以及连接在晶体管的第一电极和电源端子之间的FET电阻器。 FET电阻的栅电极断开。

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