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1. 发明授权

US06245673B1 Method of forming tungsten silicide film 失效
标题翻译：形成硅化钨膜的方法
公开(公告)号：US06245673B1
公开(公告)日：2001-06-12
申请号：US09385848
申请日：1999-08-30
申请人： Kazuya Okubo , Tsuyoshi Takahashi , Kimiya Aoki , Kimihiro Matsuse
发明人： Kazuya Okubo , Tsuyoshi Takahashi , Kimiya Aoki , Kimihiro Matsuse
IPC分类号： H01L213205
CPC分类号： C23C16/42 , H01L21/28518
摘要： A first tungsten silicide layer relatively rich in silicon is formed on an object by using a process gas having a phosphorus atom-containing gas added thereto, and a second tungsten silicide layer relatively rich in tungsten is formed on the first tungsten silicide layer, so that a tungsten silicide film is formed. The addition amount of the phosphorus atom-containing gas to the process gas is 0.02 to 0.2% by volume “in terms of a phosphine gas”.
摘要翻译：通过使用添加了含有磷原子的气体的处理气体，在物体上形成比较富硅的第一硅化钨层，在第一硅化钨层上形成比较富含钨的第二硅化钨层，形成硅化钨膜。含磷原子的气体相对于处理气体的添加量为“以磷化氢气体计算”为0.02体积％〜0.2体积％。

2. 发明授权

US6022586A Method and apparatus for forming laminated thin films or layers 失效
标题翻译：用于形成叠层薄膜或层的方法和装置
公开(公告)号：US6022586A
公开(公告)日：2000-02-08
申请号：US28645
申请日：1998-02-24
申请人： Tsuyoshi Hashimoto , Kimihiro Matsuse , Kazuya Okubo , Tsuyoshi Takahashi
发明人： Tsuyoshi Hashimoto , Kimihiro Matsuse , Kazuya Okubo , Tsuyoshi Takahashi
IPC分类号： H01L21/28 , C23C16/44 , C23C16/455 , H01L21/205 , H01L29/423 , H01L29/43 , H01L29/49 , H01L29/78 , C23C16/42
CPC分类号： C23C16/45565 , C23C16/4404 , C23C16/4405 , C23C16/45561
摘要： Pre-coating films are formed in a pretreatment by supplying first film-forming gases into a process chamber of a process vessel while heating the process chamber so as to form a first pre-coating film on the inner surface of the process vessel exposed to the process chamber, followed by supplying second film-forming gases into the process chamber to form a second pre-coating film on the first pre-coating film. A semiconductor wafer is loaded into the process chamber. Then, the first gases are supplied into the process chamber while heating the process chamber so as to form a first layer on the wafer, followed by supplying the second gases into the process chamber so as to form a second layer on the first layer. A silane gas is supplied into the process chamber to permit silicon material to be deposited on the surface of the second layer stacked on the first layer. Finally, the wafer having the first and second multi-film is unloaded out of the process vessel.
摘要翻译：在预处理中，通过将第一成膜气体提供到处理容器的处理室中，同时加热处理室以在暴露于该处理容器的处理容器的内表面上形成第一预涂膜，从而在预处理中形成预涂膜处理室，然后将第二成膜气体供应到处理室中，以在第一预涂膜上形成第二预涂膜。将半导体晶片装载到处理室中。然后，在加热处理室的同时，将第一气体供给到处理室中，以在晶片上形成第一层，然后将第二气体供应到处理室中，以在第一层上形成第二层。将硅烷气体供应到处理室中以允许硅材料沉积在堆叠在第一层上的第二层的表面上。最后，将具有第一和第二多层膜的晶片从处理容器中卸载出来。

3. 发明授权

US06404021B1 Laminated structure and a method of forming the same 失效
标题翻译：叠层结构及其形成方法
公开(公告)号：US06404021B1
公开(公告)日：2002-06-11
申请号：US09023712
申请日：1998-02-13
申请人： Masato Koizumi , Kazuya Okubo , Tsuyoshi Takahashi , Tsuyoshi Hashimoto , Kimihiro Matsuse
发明人： Masato Koizumi , Kazuya Okubo , Tsuyoshi Takahashi , Tsuyoshi Hashimoto , Kimihiro Matsuse
IPC分类号： H01L2976
CPC分类号： H01L29/4933 , H01L21/28061 , H01L21/76889 , H01L2924/0002 , H01L2924/00
摘要： A method of forming a gate electrode of a multi-layer structure includes a step of supplying a processing gas for poly-crystal film formation and impurities of a P-type into a film formation device, to form a poly-crystal silicon layer doped with P-type impurities, on a surface of a gate film target, a step of maintaining the processing target in the film formation device to prevent formation of an oxide film might not be formed on the poly-crystal silicon layer, and a step of supplying a processing gas for tungsten silicide film formation and impurities of a P-type into the film formation device, to form a tungsten silicide layer doped with impurities of P-type impurities, on the poly-crystal silicon layer on which no oxide film is formed.
摘要翻译：形成多层结构的栅电极的方法包括：向成膜器件提供多晶硅膜形成处理气体和P型杂质的步骤，以形成掺杂有多晶硅层的多晶硅层在栅极膜靶的表面上的P型杂质可能不会在多晶硅层上形成保持成膜装置中的处理对象以防止形成氧化膜的步骤，用于形成钨硅化物膜的处理气体和P型杂质成膜装置，以在不形成氧化膜的多晶硅层上形成掺有P型杂质的杂质的硅化钨层。

4. 发明授权

US06489208B2 Method of forming a laminated structure to enhance metal silicide adhesion on polycrystalline silicon 失效
标题翻译：形成叠层结构以增强多晶硅上的金属硅化物附着力的方法
公开(公告)号：US06489208B2
公开(公告)日：2002-12-03
申请号：US10042148
申请日：2002-01-11
申请人： Masato Koizumi , Kazuya Okubo , Tsuyoshi Takahashi , Tsuyoshi Hashimoto , Kimihiro Matsuse
发明人： Masato Koizumi , Kazuya Okubo , Tsuyoshi Takahashi , Tsuyoshi Hashimoto , Kimihiro Matsuse
IPC分类号： H01L2128
CPC分类号： H01L29/4933 , H01L21/28061 , H01L21/76889 , H01L2924/0002 , H01L2924/00
摘要： A method of forming a gate electrode of a multi-layer structure includes a step of supplying a processing gas for poly-crystal film formation and impurities of a P-type into a film formation device, to form a poly-crystal silicon layer doped with P-type impurities, on a surface of a gate film target, a step of maintaining the processing target in the film formation device to prevent formation of an oxide film on the poly-crystal silicon layer; and a step of supplying a processing gas for tungsten silicide film formation and impurities of a P-type into the film formation device, to form a tungsten silicide layer doped with impurities of P-type impurities, on the poly-crystal silicon layer on which no oxide film is formed.
摘要翻译：形成多层结构的栅电极的方法包括：向成膜器件提供多晶硅膜形成处理气体和P型杂质的步骤，以形成掺杂有多晶硅层的多晶硅层 P型杂质，在栅极膜靶的表面上，保持成膜装置中的处理对象以防止在多晶硅层上形成氧化膜的步骤; 以及向所述成膜装置供给硅化钨成膜用处理气体和P型杂质的工序，在所述多晶硅层上形成掺杂有P型杂质的杂质的硅化钨层，不形成氧化膜。

5. 发明授权

US06251188B1 Apparatus for forming laminated thin films or layers 有权
标题翻译：用于形成叠层薄膜或层的装置
公开(公告)号：US06251188B1
公开(公告)日：2001-06-26
申请号：US09473682
申请日：1999-12-29
申请人： Tsuyoshi Hashimoto , Kimihiro Matsuse , Kazuya Okubo , Tsuyoshi Takahashi
发明人： Tsuyoshi Hashimoto , Kimihiro Matsuse , Kazuya Okubo , Tsuyoshi Takahashi
IPC分类号： C23C1600
CPC分类号： C23C16/45565 , C23C16/4404 , C23C16/4405 , C23C16/45561
摘要： Pre-coating films are formed in a pretreatment by supplying first film-forming gases into a process chamber of a process vessel while heating the process chamber so as to form a first pre-coating film on the inner surface of the process vessel exposed to the process chamber, followed by supplying second film-forming gases into the process chamber to form a second pre-coating film on the first pre-coating film. A semiconductor wafer is loaded into the process chamber. Then, the first gases are supplied into the process chamber while heating the process chamber so as to form a first layer on the wafer, followed by supplying the second gases into the process chamber so as to form a second layer on the first layer. A silane gas is supplied into the process chamber to permit silicon material to be deposited on the surface of the second layer stacked on the first layer. Finally, the wafer having the first and second multi-film is unloaded out of the process vessel.
摘要翻译：在预处理中，通过将第一成膜气体提供到处理容器的处理室中，同时加热处理室以在暴露于该处理容器的处理容器的内表面上形成第一预涂膜，从而在预处理中形成预涂膜处理室，然后将第二成膜气体供应到处理室中，以在第一预涂膜上形成第二预涂膜。将半导体晶片装载到处理室中。然后，在加热处理室的同时，将第一气体供给到处理室中，以在晶片上形成第一层，然后将第二气体供应到处理室中，以在第一层上形成第二层。将硅烷气体供应到处理室中以允许硅材料沉积在堆叠在第一层上的第二层的表面上。最后，将具有第一和第二多层膜的晶片从处理容器中卸载出来。

6. 发明授权

US09295489B2 Guide tube system for forming pneumoperitoneum and providing route for accessing body cavity 有权
标题翻译：导气管系统，用于形成气腹并提供进入体腔的途径
公开(公告)号：US09295489B2
公开(公告)日：2016-03-29
申请号：US13144139
申请日：2010-01-20
申请人： Kiyokazu Nakajima , Toshirou Nishida , Tsuyoshi Takahashi , Yoshihito Souma
发明人： Kiyokazu Nakajima , Toshirou Nishida , Tsuyoshi Takahashi , Yoshihito Souma
IPC分类号： A61M37/00 , A61M1/00 , A61M5/178 , A61M31/00 , A61F11/00 , A61B17/34 , A61B1/00 , A61B17/29 , A61B17/00 , A61B19/00 , A61M25/00 , A61J15/00
CPC分类号： A61B17/3474 , A61B17/29 , A61B17/3403 , A61B17/3415 , A61B2017/00278 , A61B2090/062 , A61J15/0007 , A61M25/007
摘要： The guide tube for forming a pneumoperitoneum of the present invention comprising a flexible tube having an inner cavity, has an outer diameter that allows the guide tube to be inserted into a puncture needle, a distal end of the guide tube is closed, the distal end is provided with a tip portion that can be held by holding forceps provided in an endoscope, a proximal end of the guide tube is provided with a connecting portion to an insufflation apparatus, and the guide tube is provided with a side hole region having at least one side hole that can establish communication between the inner cavity of the flexible tube and the outside in a case where the inner cavity is pressurized through insufflation. According to the guide tube for forming a pneumoperitoneum of the present invention, only with single puncture from the body surface into the lumen of a lumen organ, a preliminary pneumoperitoneum can be safely and reliably created without damaging other organs, and, at the same time, the part of the lumen organ wall pierced during formation of the pneumoperitoneum can be used as a route for accessing the peritoneal cavity from the lumen of the lumen organ.
摘要翻译：本发明的用于形成气腹的导管包括具有内腔的柔性管，具有允许导管插入穿刺针的外径，导管的远端封闭，远端设置有可以通过设置在内窥镜中的保持镊子来保持的前端部，导管的近端设置有与吹气装置的连接部，并且导管设置有至少具有侧孔区域在内腔通过吹气加压的情况下，可以在柔性管的内腔与外部之间建立连通的一个侧孔。根据本发明的气腹形成用引导管，只要从身体表面单次穿刺到管腔器官的腔内即可安全可靠地产生气腹，而不会损伤其他器官，同时，在气腹形成期间穿孔的管腔器官壁的部分可以用作从管腔器官的腔进入腹膜腔的途径。

7. 发明授权

US09190145B2 Drive method for memory element and storage device using memory element 有权
标题翻译：使用存储元件的存储元件和存储设备的驱动方法
公开(公告)号：US09190145B2
公开(公告)日：2015-11-17
申请号：US13819247
申请日：2011-08-25
申请人： Tsuyoshi Takahashi , Yuichiro Masuda , Shigeo Furuta , Touru Sumiya , Masatoshi Ono , Yutaka Hayashi , Toshimi Fukuoka , Tetsuo Shimizu , Kumaragurubaran Somu , Hiroshi Suga , Yasuhisa Naitou
发明人： Tsuyoshi Takahashi , Yuichiro Masuda , Shigeo Furuta , Touru Sumiya , Masatoshi Ono , Yutaka Hayashi , Toshimi Fukuoka , Tetsuo Shimizu , Kumaragurubaran Somu , Hiroshi Suga , Yasuhisa Naitou
IPC分类号： G11C11/00 , G11C13/00 , H01L27/10
CPC分类号： G11C13/0069 , G11C13/0002 , G11C2213/79 , H01L27/101
摘要： In a drive method for a memory element that includes an insulating substrate, a first electrode and a second electrode provided on the insulating substrate, and an inter-electrode gap portion provided between the first electrode and the second electrode and having a gap of the order of nanometers where a phenomenon of a change in resistance value between the first and second electrodes occurs, and that can perform a transition from a predetermined low-resistance state to a predetermined high-resistance state and a transition from the high-resistance state to the low-resistance state, a current pulse is applied to the memory element by a constant current circuit upon the transition from the high-resistance state to the low-resistance state.
摘要翻译：在包括绝缘基板的存储元件的驱动方法中，设置在所述绝缘基板上的第一电极和第二电极以及设置在所述第一电极和所述第二电极之间并且具有所述第一电极和所述第二电极的间隙的电极间间隙其中发生第一和第二电极之间的电阻值变化的现象，并且可以执行从预定的低电阻状态到预定的高电阻状态的转变以及从高电阻状态到低电阻状态时，在从高电阻状态向低电阻状态转变时，通过恒流电路将电流脉冲施加到存储元件。

8. 发明授权

US08945369B2 Biosensor measurement system and measurement method 有权
标题翻译：生物传感器测量系统和测量方法
公开(公告)号：US08945369B2
公开(公告)日：2015-02-03
申请号：US12375111
申请日：2007-07-26
申请人： Yoshihiro Itoh , Eriko Yamanishi , Tsuyoshi Takahashi , Hiroyuki Tokunaga
发明人： Yoshihiro Itoh , Eriko Yamanishi , Tsuyoshi Takahashi , Hiroyuki Tokunaga
IPC分类号： C12Q1/25 , G01N27/26 , G01N27/327
CPC分类号： G01N27/3274
摘要： There is provided a biosensor measurement system which can output a highly-precise measurement result even when an impact such as falling of the sensor occurs or the biosensor is an exposed sensor. An abnormal waveform detection electrode is provided in addition to electrodes for quantitative determination of a target substance. Therefore, when an impact is caused by such as falling of the sensor in a halt period where no voltage is applied in a voltage application algorithm, the abnormal waveform detection electrode can detect the impact. Further, also an exposed sensor can be detected by the abnormal waveform which is detected by the abnormal waveform detection electrode.
摘要翻译：提供了一种生物传感器测量系统，即使当传感器出现下降或生物传感器是暴露的传感器时也能输出高精度的测量结果。除了用于定量目标物质的电极之外，还提供异常波形检测电极。因此，在电压施加算法中，如果在不施加电压的停止期间传感器的下降引起冲击，则异常波形检测电极可以检测出影响。此外，也可以通过由异常波形检测电极检测到的异常波形来检测曝光的传感器。

9. 发明申请

US20130337571A1 BIOLOGICAL SAMPLE MEASURING DEVICE AND METHOD FOR MEASURING BIOLOGICAL SAMPLE USING SAME 有权
标题翻译：生物样品测量装置和使用其测量生物样品的方法
公开(公告)号：US20130337571A1
公开(公告)日：2013-12-19
申请号：US14003090
申请日：2012-05-10
申请人： Daiki Mizuoka , Hiroyuki Tokunaga , Tsuyoshi Takahashi
发明人： Daiki Mizuoka , Hiroyuki Tokunaga , Tsuyoshi Takahashi
IPC分类号： G01N33/66
CPC分类号： G01N33/66 , G01N27/3273 , G01N27/3274 , Y10T436/144444
摘要： With this biological sample measuring device, the determination section performs measurement at specific intervals in a first measurement period from the start of measurement until a first time, and performs measurement at specific intervals in a second measurement period that comes after the first measurement period, calculates the difference between the measurement values in corresponding specific periods, and finds a plurality of first difference determination values, on the basis of a plurality of current values measured in the first measurement period and a plurality of current values measured in the second measurement period, finds a second difference determination value by finding the difference at specific intervals in the plurality of first difference determination values, and determines whether or not a reagent movement error and/or exposure error of the biological sample measurement sensor has occurred, on the basis of the first and second difference determination values.
摘要翻译：在该生物样本测定装置中，决定部在从开始测量直到第一次的第一测量期间内以特定间隔进行测量，并且在第一测定周期之后的第二测定期间内，以规定间隔进行测定，基于在第一测量周期中测量的多个电流值和在第二测量周期中测量的多个电流值，在相应的特定周期中的测量值之间的差异，并且找到多个第一差分确定值，找到第二差分确定值，通过在多个第一差分确定值中以特定间隔找到差异，并且基于第一差异确定值确定生物样本测量传感器的试剂移动误差和/或曝光误差是否已经发生和第二差分确定值。

10. 发明授权

US08507122B2 Power supply device including a plurality of battery cells arranged side by side 有权
标题翻译：电源装置，其包括并排布置的多个电池单元
公开(公告)号：US08507122B2
公开(公告)日：2013-08-13
申请号：US12914251
申请日：2010-10-28
申请人： Masao Saito , Tomokazu Takashina , Tsuyoshi Takahashi
发明人： Masao Saito , Tomokazu Takashina , Tsuyoshi Takahashi
IPC分类号： H01M10/50
CPC分类号： H01M10/0413 , H01M2/1072 , H01M6/42 , H01M10/613 , H01M10/625 , H01M10/647 , H01M10/6557 , H01M10/6563 , H01M10/6566
摘要： A power supply device includes rectangular battery cells 1, resin separators 2, end spacers 17, thick metal end plates 10, and coupling members 11. The separator 2 is inserted between the cells 1 to insulate adjacent cells 1 from each other, and in thermal contact with the cells 1. The end spacers 17 cover end battery cells 1 on the opposed end surfaces of a battery block composed of the cells 1 and the separators 2 alternately arranged. The end plates 10 cover the surfaces of the end spacers 17. The coupling members 11 couple the end plates 10 to each other. The separators 2 form gaps 4 for flowing air along the surfaces of the cells 1 in contact with the separators 2. The end spacers 17 have hollow layers 18 on their surfaces in contact with the cells 1, and define closed chambers.
摘要翻译：电源装置包括矩形电池单元1，树脂隔板2，端部间隔件17，厚金属端板10和联接构件11.隔板2插入电池单元1之间，以使相邻电池单元1相互隔离，与电池单元1接触。端部间隔件17覆盖由电池单元1和分隔件2交替布置的电池块的相对端面上的端部电池单元1。端板10覆盖端部间隔件17的表面。联接构件11将端板10彼此连接。分离器2形成用于沿着与隔板2接触的电池单元1的表面流动空气的间隙4.端部间隔件17在其与电池单元1接触的表面上具有中空层18，并且限定闭合室。

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