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    • 1. 发明授权
    • Heating apparatus, and processing apparatus
    • 加热装置和加工装置
    • US6121579A
    • 2000-09-19
    • US807772
    • 1997-02-27
    • Kazutsugu AokiWataru OkaseHironori YagiMasamichi Nomura
    • Kazutsugu AokiWataru OkaseHironori YagiMasamichi Nomura
    • C23C16/48C30B25/10C30B25/14H01L21/00F27B11/00
    • H01L21/67115C23C16/481C30B25/10C30B25/14
    • A heat treating apparatus comprises a process chamber within which a wafer is subjected to a heat treatment. A supporting plate for supporting the wafer is arranged within the process chamber. A process gas is supplied from above into the process chamber. A main heating means for heating the wafer is arranged below the process chamber, with a transmitting window interposed therebetween. The main heating means includes a plurality of heating sources for irradiating the supporting plate with heat rays so as to heat the wafer indirectly and a rotatable table having the heating sources arranged on the front surface thereof. The heat treating apparatus also comprises an auxiliary heating means for compensating for an uneven temperature caused on the surface of the wafer by the main heating means. The heating source of the auxiliary heating means is arranged on the surface of the rotatable table together with the heating sources of the main heating means, and the heat output from the heating source of the auxiliary heating means can be controlled independently of the heat output from the heating sources of the main heating means.
    • 热处理装置包括处理室,在该处理室内对晶片进行热处理。 用于支撑晶片的支撑板布置在处理室内。 处理气体从上方供应到处理室中。 用于加热晶片的主加热装置布置在处理室的下方,其间插入有透射窗。 主加热装置包括多个加热源,用于向支撑板照射热射线以间接加热晶片,并且具有布置在其前表面上的加热源的可旋转工作台。 热处理装置还包括用于补偿由主加热装置在晶片表面引起的不均匀温度的辅助加热装置。 辅助加热装置的加热源与主加热装置的加热源一起布置在可旋转工作台的表面上,并且可以独立于来自辅助加热装置的加热源的热源的输出来控制从辅助加热装置的加热源输出的热量 主要加热装置的加热源。
    • 2. 发明授权
    • Thermal treatment method and apparatus
    • 热处理方法及装置
    • US06473993B1
    • 2002-11-05
    • US09537768
    • 2000-03-30
    • Yasushi YagiTakeshi SakumaWataru OkaseMasayuki KitamuraHironori YagiEisuke Morisaki
    • Yasushi YagiTakeshi SakumaWataru OkaseMasayuki KitamuraHironori YagiEisuke Morisaki
    • F26B304
    • H01L21/67109
    • A semiconductor wafer is mounted on a susceptor disposed in a processing chamber, the wafer is heated at a temperature on the order of 1000° C. for annealing, and a gas is supplied from a gas supply device disposed opposite to the wafer. When raising the temperature of the wafer and/or when lowering the temperature of the wafer, intra-surface temperature difference is limited to a small value to suppress the occurrence of slips. A gas supply device is divided into sections corresponding to a central part and a peripheral part, respectively, of the wafer to supply the gas at different flow rates onto the central part and the peripheral part, respectively. When raising the temperature of the wafer, for example, a gas of a temperature higher (lower) than that of the wafer is supplied at a flow rate per unit area greater (lower) than that at which the gas is supplied to the peripheral part to the central part. When lowering the temperature of the wafer, for example, a gas of a temperature higher (lower) than that of the wafer is supplied at a flow rate per unit area lower (higher) than that at which the gas is supplied to the peripheral part to the central part.
    • 将半导体晶片安装在设置在处理室中的基座上,将晶片在约1000℃的温度下加热退火,并且从与晶片相对设置的气体供给装置供给气体。 当提高晶片的温度和/或当降低晶片的温度时,将表面内温度差限制在较小的值以抑制滑移的发生。 气体供给装置分别对应于晶片的中心部分和周边部分,以将不同流量的气体分别供应到中心部分和周边部分。 当提高晶片的温度时,例如以比晶片的温度更高(低于)的温度的气体以比将气体供应到周边部分的流量更大(下) 到中部。 当降低晶片的温度时,例如以比晶片的温度更高(更低)的温度的气体以比供应气体的周边部分低的(高)的单位面积的流量被供给 到中部。
    • 4. 发明申请
    • Cooling system, electronic equipment, and external unit
    • 冷却系统,电子设备和外部设备
    • US20050145404A1
    • 2005-07-07
    • US10991163
    • 2004-11-16
    • Hironori YagiYasuhiro Ootori
    • Hironori YagiYasuhiro Ootori
    • G06F1/20H05K5/00H05K7/20
    • G06F1/20
    • Electronic equipment (3) has an electronic equipment main body (1) and an external device (2) attached to this electronic equipment main body (1). A first side face (21B) of a housing (21) for the external device (2) adjoins an exhaust port (112) of the electronic equipment main body (1). A first opening (211B) is formed on this first side face (21B). A second opening (211D) is formed on a third side face (21D) facing the first side face (21B). Because of the rotation of an exhaust fan (113) and the air exhausted from the exhaust port (112), negative pressure is generated near the first opening (211B), and air flows from the second opening (211D) to the first opening (211B).
    • 电子设备(3)具有安装在该电子设备主体(1)上的电子设备主体(1)和外部设备(2)。 用于外部设备(2)的壳体(21)的第一侧面(21B)与电子设备主体(1)的排气口(112)相邻。 第一开口(211B)形成在该第一侧面(21B)上。 第二开口(211D)形成在面对第一侧面(21B)的第三侧面(21D)上。 由于排气风扇113的旋转和从排气口112排出的空气,在第一开口211b附近产生负压,空气从第二开口211D流向第一开口211。 开放(211B)。
    • 5. 发明授权
    • Vacuum processing apparatus
    • 真空加工设备
    • US5591269A
    • 1997-01-07
    • US265134
    • 1994-06-23
    • Junichi AramiKenji IshikawaYouichi DeguchiHironori YagiNobuo KawadaIsao Yanagisawa
    • Junichi AramiKenji IshikawaYouichi DeguchiHironori YagiNobuo KawadaIsao Yanagisawa
    • C23C16/458C23C16/46C23C16/00
    • C23C16/463C23C16/4586C23C16/46C23C16/466
    • A vacuum processing apparatus includes: a processing chamber for performing a film formation process to a semiconductor wafer in a vacuum; a mounting member provided in the processing chamber and having a mounting surface for mounting a target object; an electrostatic chuck, provided to the mounting surface of the mounting member, for chucking the semiconductor wafer; a heating mechanism for heating the semiconductor wafer; and a processing gas supply mechanism for supplying a processing gas for performing the film formation process to the semiconductor wafer into the processing chamber. The mounting member has a base, a first insulating layer formed on the surface of the base, and a second insulating layer formed on the first insulating layer, and has a conductive layer between the first insulating layer and the second insulating layer on the mounting surface side of the mounting member to obtain the above electrostatic chuck constituted by the first insulating layer, the second insulating layer, and the conductive layer, and the heating mechanism has a heating member provided between the first insulating layer and the second insulating layer on the lower surface side of the mounting member.
    • 真空处理装置包括:处理室,用于在真空中对半导体晶片进行成膜处理; 设置在所述处理室中并具有用于安装目标物体的安装表面的安装构件; 设置在安装构件的安装表面上的用于夹持半导体晶片的静电卡盘; 用于加热半导体晶片的加热机构; 以及处理气体供给机构,用于将用于进行成膜处理的处理气体供给到半导体晶片进入处理室。 安装构件具有底座,形成在基座表面上的第一绝缘层和形成在第一绝缘层上的第二绝缘层,并且在安装表面上的第一绝缘层和第二绝缘层之间具有导电层 以获得由第一绝缘层,第二绝缘层和导电层构成的上述静电卡盘,并且加热机构具有设置在第一绝缘层和下层的第二绝缘层之间的加热构件 安装构件的表面侧。
    • 6. 发明授权
    • Cooling system, electronic equipment, and external unit
    • 冷却系统,电子设备和外部设备
    • US07245487B2
    • 2007-07-17
    • US10991163
    • 2004-11-16
    • Hironori YagiYasuhiro Ootori
    • Hironori YagiYasuhiro Ootori
    • H05K7/20
    • G06F1/20
    • Electronic equipment (3) has an electronic equipment main body (1) and an external device (2) attached to this electronic equipment main body (1). A first side face (21B) of a housing (21) for the external device (2) adjoins an exhaust port (112) of the electronic equipment main body (1). A first opening (211B) is formed on this first side face (21B). A second opening (211D) is formed on a third side face (21D) facing the first side face (21B). Because of the rotation of an exhaust fan (113) and the air exhausted from the exhaust port (112), negative pressure is generated near the first opening (211B), and air flows from the second opening (211D) to the first opening (211B).
    • 电子设备(3)具有安装在该电子设备主体(1)上的电子设备主体(1)和外部设备(2)。 用于外部设备(2)的壳体(21)的第一侧面(21B)与电子设备主体(1)的排气口(112)相邻。 第一开口(211B)形成在该第一侧面(21B)上。 第二开口(211D)形成在面对第一侧面(21B)的第三侧面(21D)上。 由于排气风扇113的旋转和从排气口112排出的空气,在第一开口211b附近产生负压,空气从第二开口211D流向第一开口211。 开放(211B)。