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    • 4. 发明授权
    • Method for manufacturing oxide high-temperature superconductor
    • 氧化物高温超导体的制造方法
    • US5145829A
    • 1992-09-08
    • US396620
    • 1989-08-22
    • Toshihisa AsanoYoshiaki TanakaMasao FukutomiHiroshi Maeda
    • Toshihisa AsanoYoshiaki TanakaMasao FukutomiHiroshi Maeda
    • C04B35/00C01G1/00C04B35/45H01B12/00H01B13/00H01L39/24
    • H01L39/2419C04B35/4525Y10S505/739Y10S505/74
    • A compacted and highly oriented microstructure of the bulk-shaped Bi-Sr-Ca-Cu-O system oxide superconductor is obtained by the intermediate pressing method of the present invention. The growth rate of the high critical temperature phase in the bulk of Pb-doped Bi-Sr-Ca-Cu-O system oxide superconductor is also much improved and the sintering duration for obtaining a single phase having a high critical temperature is shorteneed by this method. Additionally, a higher critcal current density of Bi-Sr-Ca-Cu-O system oxide superconductor is obtained by the working under pressure process after cooling between a first and a second sintering step. Furthermore, the magnetic field dependence of the critical current density of Bi-Sr-Ca-Cu-O system oxide superconductor is also improved by the method of the present invention. The thus intermediate pressing process between the first and second sintering step of the present invention may be applied so easily as to facilitate the manufacture of tapes, wires, discs or the like of the Bi-Sr-Ca-Cu-O system oxide superconductor.
    • 通过本发明的中间压制方法获得块状Bi-Sr-Ca-Cu-O系氧化物超导体的压实且高度取向的微观结构。 Pb掺杂的Bi-Sr-Ca-Cu-O体系氧化物超导体的大部分高临界温度相的生长速度也大大提高,并且获得具有高临界温度的单相的烧结持续时间通过这种短路 方法。 另外,Bi-Sr-Ca-Cu-O系氧化物超导体的Critcal电流密度通过在第一和第二烧结步骤冷却之后的加压工艺得到。 此外,通过本发明的方法也提高了Bi-Sr-Ca-Cu-O系氧化物超导体的临界电流密度的磁场依赖性。 本发明的第一和第二烧结步骤之间的这样的中间压制方法可以容易地应用,以便于Bi-Sr-Ca-Cu-O系氧化物超导体的带,线,盘等的制造。