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1. 发明申请

US20110135318A1 VERTICAL CAVITY SURFACE EMITTING LASER, VERTICAL CAVITY SURFACE EMITTING LASER DEVICE, OPTICAL TRANSMISSION DEVICE, AND INFORMATION PROCESSING APPARATUS 审中-公开
标题翻译：垂直孔表面发射激光，垂直孔表面发射激光装置，光传输装置和信息处理装置
公开(公告)号：US20110135318A1
公开(公告)日：2011-06-09
申请号：US12781175
申请日：2010-05-17
申请人： Kazutaka Takeda , Masahiro Yoshikawa , Kazuyuki Matsushita
发明人： Kazutaka Takeda , Masahiro Yoshikawa , Kazuyuki Matsushita
IPC分类号： H04B10/04 , H01S5/183 , H01L33/00 , G11B7/00
CPC分类号： H01S5/18311 , H01S5/005 , H01S5/02212 , H01S5/0425 , H01S5/18391 , H01S2301/166 , H01S2301/176
摘要： A vertical cavity surface emitting laser that includes: a substrate; a first semiconductor multilayer reflector; an active region; a second semiconductor multilayer reflector; a columnar structure formed from the second semiconductor multilayer reflector to the first semiconductor multilayer reflector; a current narrowing layer formed inside of the columnar structure and having a conductive region surrounded by an oxidization region; a first electrode formed at a top of the columnar structure, electrically connected to the second semiconductor multilayer reflector and defining a beam window; a first insulating film comprised of a material with a first refractive index and formed on the first electrode to cover the beam window; and a second insulating film comprised of a material with a second refractive index and formed on the first insulating film, of which a radius is smaller than a radius of the conductive region.
摘要翻译：一种垂直腔表面发射激光器，包括：衬底; 第一半导体多层反射器; 活跃区域第二半导体多层反射器; 由所述第二半导体多层反射器形成到所述第一半导体多层反射器的柱状结构; 形成在柱状结构内部并具有由氧化区域包围的导电区域的电流变窄层; 形成在所述柱状结构的顶部的第一电极，电连接到所述第二半导体多层反射器并限定光束窗; 第一绝缘膜，由具有第一折射率的材料构成，并形成在第一电极上以覆盖光束窗; 以及第二绝缘膜，其由具有第二折射率的材料构成，并形成在第一绝缘膜上，半导体的半径小于导电区域的半径。

2. 发明申请

US20110150500A1 VERTICAL CAVITY SURFACE EMITTING LASER, VERTICAL CAVITY SURFACE EMITTING LASER DEVICE, OPTICAL TRANSMISSION DEVICE, AND INFORMATION PROCESSING APPARATUS 审中-公开
标题翻译：垂直孔表面发射激光，垂直孔表面发射激光装置，光传输装置和信息处理装置
公开(公告)号：US20110150500A1
公开(公告)日：2011-06-23
申请号：US12775683
申请日：2010-05-07
申请人： Kazuyuki Matsushita , Hideo Nakayama , Masahiro Yoshikawa , Kazutaka Takeda
发明人： Kazuyuki Matsushita , Hideo Nakayama , Masahiro Yoshikawa , Kazutaka Takeda
IPC分类号： H04B10/04 , H01S5/18 , H01L21/28 , G11B7/00
CPC分类号： H01S5/18313 , H01S5/02212 , H01S5/02284 , H01S5/02288 , H01S5/18347 , H01S5/18377 , H01S5/18394
摘要： A vertical cavity surface emitting laser that includes: a substrate; a first semiconductor multilayer reflector; an active region; a second semiconductor multilayer reflector; a columnar structure formed on the substrate; a current narrowing layer that is formed inside of the columnar structure, and has a conductive region surrounded by an oxidization region selectively oxidized; a first electrode that is formed at a top of the columnar structure, and defines a beam window; a first insulating film that covers the beam window; and a second insulating film of which a second refractive index is larger than the first refractive index. A reflection ratio in a second region where the second insulating film is formed is lower than a reflection ratio in a first region where only the first insulating film is formed.
摘要翻译：一种垂直腔表面发射激光器，包括：衬底; 第一半导体多层反射器; 活跃区域第二半导体多层反射器; 形成在基板上的柱状结构; 形成在柱状结构内部的电流变窄层，具有被氧化区域包围的导电区域选择性氧化; 第一电极，其形成在所述柱状结构的顶部，并且限定梁窗; 覆盖梁窗的第一绝缘膜; 第二绝缘膜的第二折射率大于第一折射率。在形成第二绝缘膜的第二区域中的反射率低于仅形成第一绝缘膜的第一区域中的反射率。

3. 发明授权

US08465993B2 Vertical cavity surface emitting laser, vertical cavity surface emitting laser device, optical transmission device, and information processing apparatus 有权
标题翻译：垂直腔表面发射激光器，垂直腔表面发射激光器件，光传输器件和信息处理设备
公开(公告)号：US08465993B2
公开(公告)日：2013-06-18
申请号：US13650410
申请日：2012-10-12
申请人： Kazutaka Takeda , Masahiro Yoshikawa , Kazuyuki Matsushita
发明人： Kazutaka Takeda , Masahiro Yoshikawa , Kazuyuki Matsushita
IPC分类号： H01L33/10
CPC分类号： H01S5/18311 , H01S5/005 , H01S5/02212 , H01S5/0425 , H01S5/18391 , H01S2301/166 , H01S2301/176
摘要： A vertical cavity surface emitting laser that includes: a substrate; a first semiconductor multilayer reflector; an active region; a second semiconductor multilayer reflector; a columnar structure formed from the second semiconductor multilayer reflector to the first semiconductor multilayer reflector; a current narrowing layer formed inside of the columnar structure and having a conductive region surrounded by an oxidization region; a first electrode formed at a top of the columnar structure, electrically connected to the second semiconductor multilayer reflector and defining a beam window; a first insulating film comprised of a material with a first refractive index and formed on the first electrode to cover the beam window; and a second insulating film comprised of a material with a second refractive index and formed on the first insulating film, of which a radius is smaller than a radius of the conductive region.
摘要翻译：一种垂直腔表面发射激光器，包括：衬底; 第一半导体多层反射器; 活跃区域第二半导体多层反射器; 由所述第二半导体多层反射器形成到所述第一半导体多层反射器的柱状结构; 形成在柱状结构内部并具有由氧化区域包围的导电区域的电流变窄层; 形成在所述柱状结构的顶部的第一电极，电连接到所述第二半导体多层反射器并限定光束窗; 第一绝缘膜，由具有第一折射率的材料构成，并形成在第一电极上以覆盖光束窗; 以及第二绝缘膜，其由具有第二折射率的材料构成，并形成在第一绝缘膜上，半导体的半径小于导电区域的半径。

4. 发明申请

US20130034922A1 VERTICAL CAVITY SURFACE EMITTING LASER, VERTICAL CAVITY SURFACE EMITTING LASER DEVICE, OPTICAL TRANSMISSION DEVICE, AND INFORMATION PROCESSING APPARATUS 有权
标题翻译：垂直孔表面发射激光，垂直孔表面发射激光装置，光传输装置和信息处理装置
公开(公告)号：US20130034922A1
公开(公告)日：2013-02-07
申请号：US13650410
申请日：2012-10-12
申请人： Kazutaka Takeda , Masahiro Yoshikawa , Kazuyuki Matsushita
发明人： Kazutaka Takeda , Masahiro Yoshikawa , Kazuyuki Matsushita
IPC分类号： H01L33/10
CPC分类号： H01S5/18311 , H01S5/005 , H01S5/02212 , H01S5/0425 , H01S5/18391 , H01S2301/166 , H01S2301/176
摘要： A vertical cavity surface emitting laser that includes: a substrate; a first semiconductor multilayer reflector; an active region; a second semiconductor multilayer reflector; a columnar structure formed from the second semiconductor multilayer reflector to the first semiconductor multilayer reflector; a current narrowing layer formed inside of the columnar structure and having a conductive region surrounded by an oxidization region; a first electrode formed at a top of the columnar structure, electrically connected to the second semiconductor multilayer reflector and defining a beam window; a first insulating film comprised of a material with a first refractive index and formed on the first electrode to cover the beam window; and a second insulating film comprised of a material with a second refractive index and formed on the first insulating film, of which a radius is smaller than a radius of the conductive region.
摘要翻译：一种垂直腔表面发射激光器，包括：衬底; 第一半导体多层反射器; 活跃区域第二半导体多层反射器; 由所述第二半导体多层反射器形成到所述第一半导体多层反射器的柱状结构; 形成在柱状结构内部并具有由氧化区域包围的导电区域的电流变窄层; 形成在所述柱状结构的顶部的第一电极，电连接到所述第二半导体多层反射器并限定光束窗; 第一绝缘膜，由具有第一折射率的材料构成，并形成在第一电极上以覆盖光束窗; 以及第二绝缘膜，其由具有第二折射率的材料构成，并形成在第一绝缘膜上，半导体的半径小于导电区域的半径。

5. 发明授权

US08323828B2 Battery case forming sheet and battery packet 有权
标题翻译：电池盒成型片和电池包
公开(公告)号：US08323828B2
公开(公告)日：2012-12-04
申请号：US10638326
申请日：2003-08-12
申请人： Takuya Yamazaki , Kiyoshi Oguchi , Koji Shimizu , Kenichiro Suto , Tsutomu Yoshinaka , Hideki Kurokawa , Hitoshi Sekino , Masahiro Yoshikawa , Hiroshi Miyama , Katsuhiko Hayashi , Jun Fukuda
发明人： Takuya Yamazaki , Kiyoshi Oguchi , Koji Shimizu , Kenichiro Suto , Tsutomu Yoshinaka , Hideki Kurokawa , Hitoshi Sekino , Masahiro Yoshikawa , Hiroshi Miyama , Katsuhiko Hayashi , Jun Fukuda
IPC分类号： H01M2/02
CPC分类号： H01M2/0275 , H01M2/021 , H01M2/0277 , H01M2/0287 , H01M2/06 , H01M10/0525 , H01M2300/0085 , Y10S428/91 , Y10T428/2495 , Y10T428/24967 , Y10T428/2804 , Y10T428/2817 , Y10T428/31681 , Y10T428/31692 , Y10T428/31913 , Y10T428/31938
摘要： A battery packet (50) comprises a battery case (51) formed by processing a battery case forming laminated sheet (10), a battery 50a contained in the battery case (51), and tabs (59, 60) extending outside from the battery case (51). The battery case forming laminated sheet (10) is formed by laminating a first base film layer (1a), i.e., an outermost layer, a metal foil layer (2), and a heat-adhesive resin layer (3) in that order. The first base film layer (1a) is a biaxially oriented polyethylene terephthalate resin film or a biaxially oriented nylon resin film. The metal foil layer (2) is an aluminum or copper foil. The heat-adhesive resin layer (3) is formed of a polyolefin resin, more preferably, of an acid-denatured polyolefin resin.
摘要翻译：电池组件（50）包括通过处理电池盒形成层压片（10）形成的电池壳体（51），容纳在电池壳体（51）中的电池50a以及从电池外部延伸的突片（59,60）情况（51）。电池盒形成叠层片（10）通过依次层叠第一基膜层（1a）即最外层，金属箔层（2）和热粘树脂层（3）而形成。第一基膜层（1a）是双轴取向聚对苯二甲酸乙二醇酯树脂膜或双轴取向尼龙树脂膜。金属箔层（2）是铝箔或铜箔。热粘树脂层（3）由聚烯烃树脂形成，更优选由酸改性的聚烯烃树脂形成。

6. 发明授权

US07724799B2 VCSEL, optical device, light irradiation device, data processing device, light source, free space optical communication device, and optical transmission system 有权
标题翻译： VCSEL，光学装置，光照射装置，数据处理装置，光源，自由空间光通信装置和光传输系统
公开(公告)号：US07724799B2
公开(公告)日：2010-05-25
申请号：US12110448
申请日：2008-04-28
申请人： Masateru Yamamoto , Masahiro Yoshikawa , Takashi Kondo
发明人： Masateru Yamamoto , Masahiro Yoshikawa , Takashi Kondo
IPC分类号： H01S5/00
CPC分类号： H01S5/18308 , B41J2/45 , H01S5/02284 , H01S5/02288 , H01S5/06804 , H01S5/0683 , H01S5/18311 , H01S5/1833 , H01S5/18336
摘要： A VCSEL includes a first distributed Bragg reflector (DBR) of a first conductivity type formed on a substrate and including at least one semiconductor layer to be oxidized, an active region having a column shaped structure and formed on the first DBR, and a second DBR of a second conductivity type. At least one hole starting from a surface of the first DBR and reaching the at least one semiconductor layer to be oxidized is formed in the first DBR outside of a column shaped structure of the second DBR. An oxidized region is formed in the semiconductor layer to be oxidized by selectively oxidizing from a side surface of the hole. In the first DBR, a first current path is formed by a conductive region surrounded by the oxidized region, and a second current path is formed by a conductive region not surrounded by the oxidized region.
摘要翻译： VCSEL包括第一导电类型的第一分布布拉格反射器（DBR），其形成在衬底上并且包括至少一个要被氧化的半导体层，形成在第一DBR上的具有柱状结构的有源区和第二DBR 的第二导电类型。从第一DBR的表面开始并到达要被氧化的至少一个半导体层的至少一个孔形成在第二DBR的列形结构外侧的第一DBR中。通过从孔的侧面选择性氧化，在半导体层中形成被氧化的氧化区域。在第一DBR中，第一电流路径由被氧化区域包围的导电区域形成，并且第二电流路径由未被氧化区域包围的导电区域形成。

7. 发明授权

US06319810B1 Method for forming solder bumps 失效
标题翻译：形成焊锡凸块的方法
公开(公告)号：US06319810B1
公开(公告)日：2001-11-20
申请号：US08659356
申请日：1996-06-06
申请人： Masayuki Ochiai , Yasuo Yamagishi , Ichiro Yamaguchi , Masahiro Yoshikawa , Koki Otake , Masataka Mizukoshi , Yuuji Watanabe
发明人： Masayuki Ochiai , Yasuo Yamagishi , Ichiro Yamaguchi , Masahiro Yoshikawa , Koki Otake , Masataka Mizukoshi , Yuuji Watanabe
IPC分类号： H01L2144
CPC分类号： H01L24/12 , B23K3/0623 , H01L21/4853 , H01L21/6835 , H01L24/11 , H01L2224/11003 , H01L2224/1111 , H01L2224/11334 , H01L2224/13099 , H01L2224/45124 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01019 , H01L2924/01022 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01322 , H01L2924/014 , H01L2924/09701 , H01L2924/10253 , H05K3/3463 , H05K3/3478 , H05K3/3484 , H05K3/3489 , H05K2201/10992 , H05K2203/0113 , H05K2203/016 , H05K2203/0278 , H05K2203/0338 , H05K2203/041 , H05K2203/043 , H05K2203/0557 , H05K2203/087 , H05K2203/1105 , H05K2203/1157 , H05K2203/1476 , H01L2924/00 , H01L2224/48
摘要： Method for forming solder bumps on a first member such as a semiconductor chip having electrode pads formed thereon. A flat plate having holes is prepared and the holes are filled with solder paste by squeezing. The flat plate is then overlapped with the first member with the flat plate above the first plate. The flat plate and the first member are heated to a temperature higher than the melting point of the solder alloy in the solder paste. Therefore, solder bumps having identical sizes and uniform structures can be obtained.
摘要翻译：在诸如其上形成有电极焊盘的半导体芯片的第一部件上形成焊料凸块的方法。准备具有孔的平板，并通过挤压填充焊膏。然后平板与第一构件重叠，平板在第一板上。平板和第一构件被加热到高于焊膏中的焊料合金的熔点的温度。因此，可以获得具有相同尺寸和均匀结构的焊料凸块。

8. 外观设计

USD851251S1 Finger cap of an artificial hand 有权
公开(公告)号：USD851251S1
公开(公告)日：2019-06-11
申请号：US35502929
申请日：2016-11-07
申请人： DAIYA INDUSTRY CO., LTD. , Masahiro Yoshikawa
设计人： Masahiro Yoshikawa , Masao Matsuo , Kazunori Ogawa
摘要： 2. Finger cap of artificial hand.
2.1: Right
2.2: Left
2.3: Front
2.4: Back
2.5: Top
2.6: Bottom
2.7: Vertical end view
2.8: Horizontal end view at base end portion
2.9: Horizontal end view at middle portion
2.10: Horizontal end view at tip portion
2.11: Perspective
The product shown in figs. 2.1 to 2.11 is a finger cap of an artificial hand; the finger cap is to be mounted on a movable finger of an artificial hand.

9. 发明授权

US08659020B2 Epitaxial silicon wafer and method for manufacturing same 有权
标题翻译：外延硅晶片及其制造方法
公开(公告)号：US08659020B2
公开(公告)日：2014-02-25
申请号：US13378562
申请日：2010-05-28
申请人： Tadashi Kawashima , Masahiro Yoshikawa , Akira Inoue , Yoshiya Yoshida
发明人： Tadashi Kawashima , Masahiro Yoshikawa , Akira Inoue , Yoshiya Yoshida
IPC分类号： H01L29/04 , H01L21/336
CPC分类号： H01L21/02532 , H01L21/02381 , H01L21/0262 , H01L21/02658 , H01L21/02664 , H01L21/3221
摘要： It is an object to provide an epitaxial silicon wafer that is provided with an excellent gettering ability in which a polysilicon layer is formed on the rear face side of a silicon crystal substrate into which phosphorus (P) and germanium (Ge) have been doped. A silicon epitaxial layer is grown by a CVD method on the surface of a silicon crystal substrate into which phosphorus and germanium have been doped at a high concentration. After that, a PBS forming step for growing a polysilicon layer is executed on the rear face side of a silicon crystal substrate. By the above steps, the number of LPDs (caused by an SF) that occur on the surface of the epitaxial silicon wafer due to the SF can be greatly reduced.
摘要翻译：本发明的目的是提供一种在掺杂有磷（P）和锗（Ge）的硅晶体衬底的背面侧上形成多晶硅层的优异的吸气能力的外延硅晶片。通过CVD法在硅晶体衬底的表面上以高浓度掺杂有磷和锗的方式生长硅外延层。之后，在硅晶体基板的背面进行用于生长多晶硅层的PBS形成工序。通过上述步骤，可以大大减少由于SF而在外延硅晶片的表面上发生的LPD（由SF引起）的数量。

10. 发明申请

US20130186993A1 JET MILL 有权
标题翻译：喷气机
公开(公告)号：US20130186993A1
公开(公告)日：2013-07-25
申请号：US13812638
申请日：2011-07-28
申请人： Masahiro Yoshikawa , Tomoyuki Chiba , Takashi Shibata
发明人： Masahiro Yoshikawa , Tomoyuki Chiba , Takashi Shibata
IPC分类号： B02C19/06
CPC分类号： B02C19/06 , B02C19/066 , B02C19/068 , B02C23/12 , B07B7/083 , B07B7/086
摘要： Disposed is a jet mill that has a cylindrical pulverization chamber (10) and a classification chamber (6) that connects to the pulverization chamber (10). A fine-powder discharge port (4a) and a classification rotor (7) are provided in the classification chamber (6). A feedstock supply port (5) and at least one gas emission nozzle (11) are provided in the pulverization chamber (10). The shape of the classification chamber (6) is a cone that starts on the inner wall of the pulverization chamber (10), and is angled towards the classification rotor (7). This configuration gives the jet mill high efficiency of pulverization and reduces the amount of powders left in the chamber when the jet mill has finished running.
摘要翻译：设置有具有连接到粉碎室（10）的圆柱形粉碎室（10）和分级室（6）的喷射式粉碎机。在分级室（6）中设置有细粉末排出口（4a）和分级转子（7）。原料供给口（5）和至少一个排气喷嘴（11）设置在粉碎室（10）中。分级室（6）的形状是从粉碎室（10）的内壁开始朝向分级转子（7）倾斜的锥体。这种配置给喷射磨机提供了高效率的粉碎，并且当喷射磨机运行完毕时，减少了腔室中留下的粉末的量。

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