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1. 发明授权

US06284640B1 Manufacturing method for semiconductor device, mounting method of semiconductor device, semiconductor device, and inspecting method of semiconductor device 失效
标题翻译：半导体装置的制造方法，半导体装置的安装方法，半导体装置以及半导体装置的检查方法
公开(公告)号：US06284640B1
公开(公告)日：2001-09-04
申请号：US09427807
申请日：1999-10-27
申请人： Masahiro Ono , Tsukasa Shiraishi , Yoshihiro Bessho , Kazuo Eda
发明人： Masahiro Ono , Tsukasa Shiraishi , Yoshihiro Bessho , Kazuo Eda
IPC分类号： H01L2144
CPC分类号： H01L24/85 , H01L24/11 , H01L24/45 , H01L24/48 , H01L24/78 , H01L2224/05001 , H01L2224/05022 , H01L2224/05027 , H01L2224/0508 , H01L2224/05572 , H01L2224/1134 , H01L2224/13099 , H01L2224/16 , H01L2224/451 , H01L2224/48091 , H01L2224/48465 , H01L2224/78301 , H01L2224/81191 , H01L2224/85181 , H01L2224/85205 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01022 , H01L2924/01024 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01039 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01327 , H01L2924/014 , H01L2924/13091 , H01L2924/14 , H01L2924/00014 , H01L2924/00
摘要： A manufacturing method for a semiconductor device using a wire bonding method using a metal wire. In the wire bonding method, an impact load applied when a metal ball formed at the tip of the metal wire by electric discharge is brought into contact with a terminal electrode of a semiconductor device is smaller than a static load applied after the metal ball is brought into contact with the terminal electrode. The method makes it possible to prevent an element or wiring from being damaged while securing the pressure necessary for bonding the metal ball to the terminal electrode even when the terminal electrode is placed on the element or the wiring.
摘要翻译：一种使用金属线的引线接合方法的半导体器件的制造方法。在引线接合方法中，当通过放电在金属线的前端形成的金属球与半导体器件的端子电极接触时施加的冲击载荷小于在金属球被带入之后施加的静态载荷与端子电极接触。该方法使得即使当将端子电极放置在元件或布线上时，也可以确保将金属球接合到端子电极所需的压力，从而防止元件或布线损坏。

2. 发明授权

US6166611A Resonator ladder type surface acoustic wave filter 失效
标题翻译：谐振梯型声表面波滤波器
公开(公告)号：US6166611A
公开(公告)日：2000-12-26
申请号：US57916
申请日：1998-04-09
申请人： Shun-ichi Seki , Yutaka Taguchi , Keiji Onishi , Osamu Kawasaki , Kazuo Eda
发明人： Shun-ichi Seki , Yutaka Taguchi , Keiji Onishi , Osamu Kawasaki , Kazuo Eda
IPC分类号： H03H9/145 , H03H9/05 , H03H9/25 , H03H9/64
CPC分类号： H03H9/1085 , H01L2224/05568 , H01L2224/05573 , H01L2224/16225 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/48472 , H01L2224/73265 , H01L2924/00014 , H01L2924/16195 , H03H9/059 , H03H9/6483 , H01L2924/00 , H01L2224/05599
摘要： A resonator ladder type surface acoustic wave filter, has an input electrical terminal, an output electrical terminal, and a grounding terminal being formed on a piezoelectric substrate, a series arm surface acoustic wave resonator and a parallel arm surface acoustic wave resonator, each constructed from an interdigital transducer for exciting a surface acoustic wave, being formed between said input electrical terminal and said output electrical terminal, and when the center frequency of said resonator ladder type surface acoustic wave filter is denoted by fc, and capacitance determined by the number of electrode finger pairs and electrode finger overlap width in said interdigital transducer of said parallel arm surface acoustic wave resonator is denoted by Cp (fc: center frequency [GHz], Cp: capacitance of the interdigital transducer of the parallel arm surface acoustic wave resonator), capacitance C of multiples of said parallel arm surface acoustic wave resonator, connected to the same node between said input electrical terminal and said output electrical terminal, always satisfies the relationfc.multidot.Cp
摘要翻译：一种谐振梯型声表面波滤波器，具有输入电端子，输出电端子和形成在压电基板上的接地端子，串联臂声表面波谐振器和平行臂表面声波谐振器，每个由在所述输入电端子和所述输出电端子之间形成用于激励表面声波的叉指换能器，并且当所述共振器梯型表面声波滤波器的中心频率由fc表示时，并且由电极数量确定的电容所述平行臂声表面波谐振器的叉指式换能器中的手指对和电极指重叠宽度由Cp（fc：中心频率[GHz]，Cp：并联臂声表面波谐振器的叉指式换能器的电容），电容所述平行臂声表面波谐振器的倍数为C，连接到s 所述输入电端子和所述输出电端子之间的ame节点总是满足关系fcxCp <4

3. 发明授权

US5925973A Electronic component and method for producing the same 失效
标题翻译：电子元件及其制造方法
公开(公告)号：US5925973A
公开(公告)日：1999-07-20
申请号：US787362
申请日：1997-01-22
申请人： Kazuo Eda , Yoshihiro Tomita , Akihiro Kanaboshi , Masato Sugimoto
发明人： Kazuo Eda , Yoshihiro Tomita , Akihiro Kanaboshi , Masato Sugimoto
IPC分类号： C04B37/00 , H01L21/02 , H01L27/12 , H01L41/04 , H01L41/18 , H03H3/02 , H03H3/08 , H03H9/10 , H03H9/17 , H03H9/25 , H01L41/08
CPC分类号： H03H9/0595 , H01L41/053 , H01L41/312 , H03H3/02 , H03H3/08 , H03H9/1035 , Y10T29/42
摘要： An electronic component of the present invention includes a first substrate, a second substrate, a first conductive layer constituting a terminal electrode on a first surface of the first substrate, and a first insulating layer formed on the first conductive layer, wherein the first insulating layer and the second substrate are directly bonded to each other by at least one bond selected from the group consisting of a hydrogen bond and a covalent bond.
摘要翻译：本发明的电子元件包括第一基板，第二基板，构成第一基板的第一表面上的端子电极的第一导电层和形成在第一导电层上的第一绝缘层，其中第一绝缘层并且第二底物通过选自氢键和共价键的至少一个键直接键合。

4. 发明授权

US5920142A Electronic part and a method of production thereof 失效
公开(公告)号：US5920142A
公开(公告)日：1999-07-06
申请号：US813279
申请日：1997-03-10
申请人： Keiji Onishi , Hideki Iwaki , Shun-ichi Seki , Yutaka Taguchi , Tsukasa Shiraishi , Yoshihiro Bessho , Osamu Kawasaki , Kazuo Eda
发明人： Keiji Onishi , Hideki Iwaki , Shun-ichi Seki , Yutaka Taguchi , Tsukasa Shiraishi , Yoshihiro Bessho , Osamu Kawasaki , Kazuo Eda
IPC分类号： H03H3/08 , H03H9/10 , H01L41/08
CPC分类号： H03H9/0509 , H03H3/08 , H03H9/0585 , H03H9/059 , H03H9/1042 , H03H9/1071 , H03H9/1085 , H03H9/1092 , H01L2224/1134 , H01L2224/131 , H01L2224/13124 , H01L2224/13144 , H01L2224/45144 , H01L2924/00013 , H01L2924/09701 , H01L2924/16152 , Y10T29/42 , Y10T29/4913 , Y10T29/49146
摘要： The present invention relates to an electronic part used for mobile communications apparatuses and the like, and more particularly to an electronic part, such as an acoustic surface-wave device, a piezoelectric ceramic device or the like, which requires an oscillation space near the surface of the functional device chip thereof, and a method of production thereof. With this method, a space retainer for forming a sealed space at the functional portion of the chip can be hermetically sealed and have high moisture resistance, and the process of forming the space retainer can be carried out easily.The electronic part of the present invention comprises a functional device chip, a space retainer for forming a sealed space at the functional portion of the chip, a circuit substrate to which the chip is secured, electrode interconnection portions for establishing electric connection between the chip and the circuit substrate, and a sealing resin for covering and sealing at least the space retainer, wherein the space retainer comprises a support layer made of a synthetic resin film, provided with an opening enclosing the functional portion and joined onto the main surface, and a cover formed and joined onto the support layer so as to cover the functional portion and form a sealed space between the cover and the functional portion.

5. 发明授权

US5892418A Balanced type surface acoustic wave device 失效
标题翻译：平衡型声表面波装置
公开(公告)号：US5892418A
公开(公告)日：1999-04-06
申请号：US898769
申请日：1997-07-23
申请人： Keiji Onishi , Kazuo Eda , Yutaka Taguchi , Shunichi Seki
发明人： Keiji Onishi , Kazuo Eda , Yutaka Taguchi , Shunichi Seki
IPC分类号： H03H9/25 , H03H9/00 , H03H9/64
CPC分类号： H03H9/6436 , H03H9/0038 , H03H9/0042 , H03H9/1071 , H03H9/6433
摘要： The present invention provides surface acoustic wave devices which do not require a balanced-to-unbalanced transformer circuit regardless of the type of the peripheral circuits of the balanced type surface acoustic wave filter, i.e. a balanced type device or an unbalanced type. A transmitting interdigital transducer and a receiving interdigital transducer are formed on a substrate comprising 41.degree. Y cut-X propagation lithium niobate. A balanced type surface acoustic wave filter is formed on a substrate comprising 36.degree. Y cut-X propagation lithium tantalate. The balanced type surface acoustic wave filter comprises two series-arm surface acoustic wave resonators and two crossed-arm surface acoustic wave resonators connected in a lattice. The substrate on which the transmitting interdigital transducer and the receiving interdigital transducer are formed and the substrate on which the balanced type surface acoustic wave filter is formed are located in a ceramic package. One of the input terminals of the transmitting interdigital transducer is grounded. The output terminals of the receiving interdigital transducer are connected to the input terminals of the balanced type surface acoustic wave filter.
摘要翻译：本发明提供了不需要平衡型不平衡变压器电路的表面声波装置，而不管平衡型表面声波滤波器的外围电路的类型，即平衡型装置或不平衡型。在包含41°Y切割X传播铌酸锂的基板上形成发射叉指式换能器和接收叉指式换能器。在包含36°Y切割X传播的钽酸锂的基板上形成平衡型表面声波滤波器。平衡型表面声波滤波器包括两个串联臂表面声波谐振器和两个以格子连接的交叉臂表面声波谐振器。其上形成有发送叉指式换能器和接收叉指式换能器的基板和形成有平衡型表面声波滤波器的基板位于陶瓷封装中。发射叉指式换能器的输入端之一接地。接收叉指式换能器的输出端连接到平衡型声表面波滤波器的输入端。

6. 发明授权

US5459368A Surface acoustic wave device mounted module 失效
标题翻译：表面声波装置安装模块
公开(公告)号：US5459368A
公开(公告)日：1995-10-17
申请号：US278905
申请日：1994-07-22
申请人： Keiji Onishi , Shunichi Seki , Yutaka Taguchi , Kazuo Eda
发明人： Keiji Onishi , Shunichi Seki , Yutaka Taguchi , Kazuo Eda
IPC分类号： H03H9/10 , H03H9/02 , H03H9/25 , H01L41/08
CPC分类号： H03H9/1071 , H03H9/0542 , H03H9/0557 , H03H9/059 , H03H9/1085 , H01L2224/16225 , H01L2224/16235 , H01L2224/32225 , H01L2224/73203 , H01L2224/73204 , H01L2224/73253 , H01L2924/01046 , H01L2924/01079 , H01L2924/09701 , H01L2924/15192 , H01L2924/16152 , H01L2924/16195 , H01L2924/19105 , H01L2924/3011 , H01L2924/3025
摘要： This invention provides a surface acoustic wave device mounted module which is miniature, light, and highly reliable. The surface acoustic wave device mounted module also has excellent frequency characteristics. The surface acoustic wave device mounted module includes a multilayer substrate which has at least one layer of a shield pattern, input-output electrodes, grounding electrodes, through holes used for connecting electrodes, and a surface acoustic wave element. The surface acoustic wave element has metallic bumps, which are transfer-coated with a conductive resin, on electrode pads and an insulating resin around the surface acoustic wave element. The electrode pads are input-output terminals and grounding terminals formed on the surface acoustic wave element. Continuities between the input-output terminals and the input-output electrodes, and between the grounding terminals and the grounding electrodes are established by the through holes. An electrode pattern is formed on the surface of the multilayer substrate facing and surrounding the surface acoustic wave element. A metallic lid is attached to the electrode pattern by a solder or a conductive resin so that the surface acoustic wave element is sealed in an airtight condition. The electrode pattern is connected to the grounding electrodes by the through holes.
摘要翻译：本发明提供一种微型，轻型，高可靠性的表面声波装置安装模块。表面声波装置安装模块也具有优异的频率特性。表面声波装置安装模块包括具有至少一层屏蔽图案，输入输出电极，接地电极，用于连接电极的通孔和表面声波元件的多层基板。表面声波元件具有金属凸块，其在电极焊盘上传导涂覆有导电树脂，并在表面声波元件周围具有绝缘树脂。电极焊盘是形成在声表面波元件上的输入输出端子和接地端子。输入输出端子与输入输出电极之间以及接地端子与接地电极之间的连续性由通孔构成。在面对并围绕声表面波元件的多层基板的表面上形成电极图案。通过焊料或导电树脂将金属盖附接到电极图案，使得表面声波元件在气密状态下被密封。电极图案通过通孔与接地电极连接。

7. 发明授权

US5037769A Method of manufacturing semiconductor device 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US5037769A
公开(公告)日：1991-08-06
申请号：US330956
申请日：1989-03-28
申请人： Masanori Inada , Kazuo Eda , Yorito Ota
发明人： Masanori Inada , Kazuo Eda , Yorito Ota
IPC分类号： H01L29/36 , H01L29/737
CPC分类号： H01L29/36 , H01L29/7371 , Y10S148/01 , Y10S148/072
摘要： A semiconductor device of a multilayer structure comprising semiconductor materials of different properties manufactured by using at least a step of epitaxially forming a semiconductor material layer on a substrate and a passivation film layer thereover, a step of introducing impurities into specific portions of the epitaxially formed semiconductor material layer and a step of removing the passivation film layer formed directly above the epitaxially formed semiconductor material layer within an epitaxial device and then applying epitaxial growing. Impurities introduced additionally to specific portions of the layer inside are substantially eliminated at the boundary adjacent the layer above the region introduced with impurities and the properties of the thus-produced semiconductors vary abruptly at the boundary between the layer in which the impurities are introduced and the layer thereabove. The material used for the passivation film layer comprises one that can be epitaxially formed and easily removed at a temperature and in a atmosphere under which the epitaxially formed layer below the passivation film are not decomposed or evaporized.
摘要翻译：一种多层结构的半导体器件，包括通过至少在衬底上外延形成半导体材料层的步骤和其上的钝化膜层而制造的具有不同性质的半导体材料，将杂质引入外延形成的半导体的特定部分材料层和去除在外延装置内的外延形成的半导体材料层正上方形成的钝化膜层，然后施加外延生长的步骤。在与内部区域相邻的边界处附近引入的层的特定部分的杂质基本上消除，并且由此产生的半导体的性质在其中引入杂质的层与其之间的边界处突然变化层以上。用于钝化膜层的材料包括可以在外部形成的并且在钝化膜下面的外延形成层不分解或蒸发的温度和气氛中容易除去的材料。

8. 发明授权

US5007066A Semiconductor laser apparatus 失效
标题翻译：半导体激光装置
公开(公告)号：US5007066A
公开(公告)日：1991-04-09
申请号：US464001
申请日：1990-01-12
申请人： Kazuo Eda
发明人： Kazuo Eda
IPC分类号： H01S3/10 , H01S5/00 , H01S5/14
CPC分类号： H01S3/10076 , H01S5/14 , H01S5/145
摘要： A semiconductor laser apparatus includes a semiconductor laser for emitting a light beam. The semiconductor laser has, as an external cavity, a quadruple light wave mixing optical phase conjugate element for inverting a spatial phase of an incident light beam. The apparatus further includes a pair of pump light sources which are arranged such that a superimposed portion of spectra of wavelengths of three light beams including two pump light beams emitted from the pair of pump light sources and entering into the optical phase conjugate element and another light beam emitted from the semiconductor laser is narrower than the spectral width of wavelengths of each of the three light beams. This enables the laser apparatus to generate an oscillating output wavelength of extremely narrow spectral width.
摘要翻译：半导体激光装置包括用于发射光束的半导体激光器。半导体激光器具有用于反射入射光束的空间相位的四重光波混合光学相位共轭元件作为外部空腔。该装置还包括一对泵浦光源，其被布置成使得包括从该对泵浦光源发射并进入光学相位共轭元件的两个泵浦光束的三个光束的波长的光谱的重叠部分和另一个光从半导体激光器发射的光束比三个光束中的每个光束的波长的光谱宽度窄。这使得激光装置能够产生非常窄的光谱宽度的振荡输出波长。

9. 发明授权

US4169071A Voltage-dependent resistor and method of making the same 失效
标题翻译：电压相关电阻及其制作方法
公开(公告)号：US4169071A
公开(公告)日：1979-09-25
申请号：US852048
申请日：1977-11-16
申请人： Kazuo Eda , Makino Osamu , Inada Masanori , Iga Atsushi , Sakai Masayuki , Matsuoka Michio
发明人： Kazuo Eda , Makino Osamu , Inada Masanori , Iga Atsushi , Sakai Masayuki , Matsuoka Michio
IPC分类号： C04B35/453 , H01C7/10 , H01B1/08
CPC分类号： H01C7/10
摘要： A voltage-dependent resistor comprising a sintered body comprising ZnO as a major part and additives wherein at least 10 weight percent of the ZnO is composed of ZnO grains having a grain size in the range from 100 to 500 microns; and method of making the same wherein the starting mixture comprises ZnO grains having a grain size in the range from 20 to 200 microns. This voltage-dependent resistor has both a low C-value and a high surge energy withstanding capability. It also has a low leakage current at a high temperature due to the addition of an antimony component as a spinel type polycrystalline Zn.sub.7/3 Sb.sub.2/3 O.sub.4.
摘要翻译：一种电压依赖电阻器，其包含以ZnO为主要部分的烧结体，其中至少10重量％的ZnO由具有100-500微米的晶粒尺寸的ZnO晶粒构成; 及其制备方法，其中起始混合物包含粒度在20至200微米范围内的ZnO颗粒。该电压相关电阻具有低C值和高浪涌能量承受能力。由于添加作为尖晶石型多晶Zn7 / 3Sb2 / 3O4的锑成分，因此在高温下也具有低的漏电流。

10. 发明授权

US06569512B2 Mounting structure for an electronic component and method for producing the same 失效
公开(公告)号：US06569512B2
公开(公告)日：2003-05-27
申请号：US09965768
申请日：2001-09-27
申请人： Hiroaki Takezawa , Tsutomu Mitani , Minehiro Itagaki , Yoshihiro Bessho , Kazuo Eda
发明人： Hiroaki Takezawa , Tsutomu Mitani , Minehiro Itagaki , Yoshihiro Bessho , Kazuo Eda
IPC分类号： B32B1508
CPC分类号： H05K3/321 , B32B7/02 , B32B7/12 , H05K2201/09909 , H05K2201/10636 , H05K2201/10984 , H05K2203/0783 , H05K2203/121 , Y02P70/611 , Y10S428/901 , Y10T29/4913 , Y10T29/49147 , Y10T428/24066 , Y10T428/24917 , Y10T428/2495 , Y10T428/24975 , Y10T428/269 , Y10T428/31678 , Y10T428/31681
摘要： In a mounting structure including a first electrode and a second electrode electrically connected to each other via a conductive adhesive, the periphery of an adhesion portion between at least one of the electrodes and the conductive adhesive is covered with an electrical insulating layer, whereby the adhesion portion is reinforced from the periphery. The electrical insulating layer may be formed by dissolving a binder resin component of the conductive adhesive in a solvent. This increases the concentration of a conductive filler in the conductive adhesive, so that the conductivity of the adhesion portion is also enhanced.

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