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    • 3. 发明授权
    • PLL-controlled oscillator
    • PLL控制振荡器
    • US06870430B2
    • 2005-03-22
    • US10456897
    • 2003-06-06
    • Akihiro NakamuraKazuo AkaikeKozo OnoTakaaki Ishii
    • Akihiro NakamuraKazuo AkaikeKozo OnoTakaaki Ishii
    • H03B5/32H03B5/04H03B5/36H03L7/099H03L1/02
    • H03B5/36H03B5/04
    • A PLL (Phase-Locked Loop)-controlled oscillator has a temperature-compensated crystal oscillator having a quartz crystal unit, an oscillating circuit connected to the crystal unit, and a temperature compensating mechanism for generating a temperature compensating voltage for compensating for frequency vs. temperature characteristics of the crystal unit, and a voltage-controlled oscillator having an LC oscillating circuit, for being controlled by a PLL using the temperature-compensated crystal oscillator as a reference signal source. The temperature-compensated crystal oscillator has circuit components except for the crystal unit, the circuit components and the voltage-controlled oscillator being integrated in a one-chip IC. The one-chip IC and the crystal unit are integrally combined with each other in the PLL-controlled oscillator.
    • PLL(锁相环)控制振荡器具有温度补偿晶体振荡器,其具有石英晶体单元,连接到晶体单元的振荡电路,以及用于产生温度补偿电压的温度补偿机构,用于补偿频率对 晶体单元的温度特性和具有LC振荡电路的压控振荡器,由使用温度补偿晶体振荡器的PLL作为参考信号源进行控制。 温度补偿晶体振荡器具有除了晶体单元,电路元件和压控振荡器集成在单芯片IC中的电路元件。 单片IC和晶体单元在PLL控制的振荡器中彼此一体地组合。
    • 8. 发明授权
    • Method of manufacturing thin quartz crystal wafer
    • 薄型石英晶片的制造方法
    • US07174620B2
    • 2007-02-13
    • US10746400
    • 2003-12-26
    • Akio ChibaKozo OnoTamotsu Kurosawa
    • Akio ChibaKozo OnoTamotsu Kurosawa
    • H04R31/00
    • H03H3/02C30B29/18C30B33/00H03H9/19Y10T29/42Y10T29/49002Y10T29/49005Y10T29/49798
    • A method of manufacturing a thin quartz crystal wafer from a quartz crystal block which is cut from a crystal body of synthetic quartz crystal and has a flat principal surface, comprises the steps of (a) converging a laser beam at a region in said quartz crystal block at a predetermined depth from the principal surface thereof to cause multiphoton phenomenon state, thereby breaking Si—O—Si bonds of quartz crystal in said region to form voids in said region, and (b) peeling said thin quartz crystal wafer from a body of said quartz crystal block along said voids. The above process is repeatedly performed on one quartz crystal block to peel off a plurality of thin quartz crystal wafers successively from the principal surface of the quartz crystal block. Each of the thin quartz crystal wafers is divided into individual quartz crystal blanks for making quartz crystal units.
    • 从由合成石英晶体切割并具有平坦主表面的石英晶体块制造薄晶体晶片的方法包括以下步骤:(a)将激光束会聚在所述石英晶体的区域 在其主表面的预定深度处阻挡以产生多光子现象状态,从而破坏所述区域中的石英晶体的Si-O-Si键,以在所述区域中形成空隙,并且(b)将所述薄的石英晶片从主体 的所述石英晶体块。 上述过程在一个石英晶体块上重复进行,从石英晶体块的主表面连续地剥离多个薄的石英晶片。 每个薄的石英晶片被分成用于制造石英晶体单元的单独的石英晶体空白。
    • 9. 发明授权
    • Load sensor with use of crystal resonator
    • 使用晶体谐振器的负载传感器
    • US06880407B2
    • 2005-04-19
    • US10163858
    • 2002-06-05
    • Masami YamanakaMotoyuki AdachiAkio ChibaKozo Ono
    • Masami YamanakaMotoyuki AdachiAkio ChibaKozo Ono
    • G01G3/16G01G3/13G01L1/10H01L41/08H01L41/18G01B7/16H01L41/04
    • G01G3/13
    • Excitation electrodes are respectively affixed to central portions of both surfaces of a long plate-shaped AT-cut crystal resonator, the central portion starts a thickness shear oscillation in the length direction of the crystal resonator when an electric signal is applied to the central portion of the crystal resonator through the excitation electrodes. And, channel-shaped, half-circular-shaped, or trapezoid grooves in cross-section are respectively formed in the plate width direction on middle portions between the center portion and end portions of the crystal resonator. These grooves are formed so as to be symmetrical with respect to a thicknesswise central position of the crystal resonator through a well-known etching technique such as photo-etching and the like.
    • 励磁电极分别固定在长板状AT切割晶体谐振器的两个表面的中心部分,当电信号施加到晶体谐振器的中心部分时,中心部分在晶体谐振器的长度方向上开始厚度剪切振荡 晶体谐振器通过激发电极。 并且,在晶体谐振器的中心部分和端部之间的中间部分上分别在板宽度方向上形成横截面的通道形状,半圆形或梯形槽。 这些槽通过公知的蚀刻技术如光蚀刻等形成为相对于晶体谐振器的厚度方向中心位置对称。