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1. 发明授权

US08295080B2 Solid-state memory device, data processing system, and data processing device 有权
标题翻译：固态存储器件，数据处理系统和数据处理器件
公开(公告)号：US08295080B2
公开(公告)日：2012-10-23
申请号：US12794077
申请日：2010-06-04
申请人： Kazuo Aizawa , Isamu Asano , Junji Tominaga , Alexander Kolobov , Paul Fons , Robert Simpson
发明人： Kazuo Aizawa , Isamu Asano , Junji Tominaga , Alexander Kolobov , Paul Fons , Robert Simpson
IPC分类号： G11C11/00
CPC分类号： H01L27/2409 , H01L27/2454 , H01L45/065 , H01L45/1233 , H01L45/126 , H01L45/144 , H01L45/1616 , H01L45/1625 , H01L45/1675 , H01L45/1683
摘要： A solid-state memory device includes: a superlattice laminate having plural crystal layers laminated therein, the crystal layers including first and second crystal layers having mutually opposite compositions; a lower electrode provided on a first surface in a laminating direction of the superlattice laminate; and an upper electrode provided on a second surface of the superlattice laminate in the laminating direction. The first crystal layer included in the superlattice laminate is made of a phase change compound. According to the present invention, the superlattice laminate laminated in opposite directions of the upper and lower electrodes is sandwiched between these electrodes. Therefore, when an electric energy is applied to the superlattice laminate via these electrodes, a uniform electric energy can be applied to a laminated surface of the superlattice laminate. Accordingly, fluctuation of a resistance is small even when information is repeatedly rewritten, and data can be read stably as a result.
摘要翻译：固体存储器件包括：层叠有多个晶体层的超晶格层压体，所述晶体层包括具有相互相反组成的第一和第二晶体层; 设置在所述超晶格层叠体的层叠方向的第一面上的下电极; 以及在层叠方向上设置在超晶格层压体的第二表面上的上电极。包含在超晶格层叠体中的第一晶体层由相变化合物制成。根据本发明，层叠在上下电极的相反方向上的超晶格层压体夹在这些电极之间。因此，当通过这些电极向超晶格层叠体施加电能时，能够将均匀的电能施加到超晶格层叠体的层叠表面。因此，即使重复地重写信息，电阻的波动也小，结果可以稳定地读出数据。

2. 发明授权

US08335106B2 Superlattice device, manufacturing method thereof, solid-state memory including superlattice device, data processing system, and data processing device 失效
标题翻译：超晶格器件及其制造方法，包括超晶格器件，数据处理系统和数据处理器件的固态存储器
公开(公告)号：US08335106B2
公开(公告)日：2012-12-18
申请号：US12772340
申请日：2010-05-03
申请人： Kazuo Aizawa , Isamu Asano , Junji Tominaga , Alexander Kolobov , Paul Fons , Robert Simpson
发明人： Kazuo Aizawa , Isamu Asano , Junji Tominaga , Alexander Kolobov , Paul Fons , Robert Simpson
IPC分类号： G11C11/34
CPC分类号： G11C13/0004 , G11C2213/55 , G11C2213/72 , G11C2213/79 , H01L45/065 , H01L45/144 , H01L45/1625
摘要： To include a superlattice laminate having laminated thereon a first crystal layer of which crystal lattice is a cubic crystal and in which positions of constituent atoms are reversibly replaced by application of energy, and a second crystal layer having a composition different from that of the first crystal layer, and an orientation layer that is an underlaying layer of the superlattice laminate and causes a laminated surface of the first crystal layer to be (111)-orientated. According to the present invention, the laminated surface of the first crystal layer can be (111)-orientated by using the orientation layer as an underlaying layer. In the first crystal layer of which laminated surface is (111)-orientated, a crystal structure reversibly changes when a relatively low energy is applied. Therefore, characteristics of a superlattice device having this crystal layer can be enhanced.
摘要翻译：为了包括其上层压有晶格为立方晶的第一晶体层，其中构成原子的位置被能量可逆地替代的超晶格层压体，以及具有与第一晶体不同的组成的第二晶体层层，以及作为超晶格层叠体的垫层的取向层，使第一结晶层的层叠表面（111）取向。根据本发明，通过使用取向层作为底层，第一晶体层的层叠表面可以是（111）取向的。在层叠表面为（111）取向的第一晶体层中，当施加相对低的能量时，晶体结构可逆地变化。因此，可以提高具有该晶体层的超晶格器件的特性。

3. 发明申请

US20100284218A1 SUPERLATTICE DEVICE, MANUFACTURING METHOD THEREOF, SOLID-STATE MEMORY INCLUDING SUPERLATTICE DEVICE, DATA PROCESSING SYSTEM, AND DATA PROCESSING DEVICE 失效
标题翻译：超级设备，其制造方法，包括超级设备的固态存储器，数据处理系统和数据处理设备
公开(公告)号：US20100284218A1
公开(公告)日：2010-11-11
申请号：US12772340
申请日：2010-05-03
申请人： Kazuo AIZAWA , Isamu Asano , Junji Tominaga , Alexander Kolobov , Paul Fons , Robert Simpson
发明人： Kazuo AIZAWA , Isamu Asano , Junji Tominaga , Alexander Kolobov , Paul Fons , Robert Simpson
IPC分类号： G11C11/34 , H01L29/66 , H01L21/06 , G11C29/00
CPC分类号： G11C13/0004 , G11C2213/55 , G11C2213/72 , G11C2213/79 , H01L45/065 , H01L45/144 , H01L45/1625
摘要： To include a superlattice laminate having laminated thereon a first crystal layer of which crystal lattice is a cubic crystal and in which positions of constituent atoms are reversibly replaced by application of energy, and a second crystal layer having a composition different from that of the first crystal layer, and an orientation layer that is an underlaying layer of the superlattice laminate and causes a laminated surface of the first crystal layer to be (111)-orientated. According to the present invention, the laminated surface of the first crystal layer can be (111)-orientated by using the orientation layer as an underlaying layer. In the first crystal layer of which laminated surface is (111)-orientated, a crystal structure reversibly changes when a relatively low energy is applied. Therefore, characteristics of a superlattice device having this crystal layer can be enhanced.
摘要翻译：为了包括其上层压有晶格为立方晶的第一晶体层，其中构成原子的位置被能量可逆地替代的超晶格层压体，以及具有与第一晶体不同的组成的第二晶体层层，以及作为超晶格层叠体的垫层的取向层，使第一结晶层的层叠表面（111）取向。根据本发明，通过使用取向层作为底层，第一晶体层的层叠表面可以是（111）取向的。在层叠表面为（111）取向的第一晶体层中，当施加相对低的能量时，晶体结构可逆地变化。因此，可以提高具有该晶体层的超晶格器件的特性。

4. 发明申请

US20110207284A1 SOLID-STATE MEMORY MANUFACTURING METHOD 有权
标题翻译：固态存储器制造方法
公开(公告)号：US20110207284A1
公开(公告)日：2011-08-25
申请号：US12998482
申请日：2009-09-28
申请人： Junji Tominaga , Takayuki Shima , Alexander Kolobov , Paul Fons , Robert Simpson , Reiko Kondo
发明人： Junji Tominaga , Takayuki Shima , Alexander Kolobov , Paul Fons , Robert Simpson , Reiko Kondo
IPC分类号： H01L45/00
CPC分类号： H01L45/1625 , H01L45/06 , H01L45/144
摘要： A method of at least one embodiment of the present invention of manufacturing a solid-state memory is a method of manufacturing a solid-state memory, the solid-state memory including a recording film whose electric characteristics are varied by phase transformation, the method including: forming the recording film by forming a laminate of two or more layers so that a superlattice structure is provided, each of the layers having a parent phase which shows solid-to-solid phase-transformation, the recording film being formed at a temperature not lower than a temperature highest among crystallization temperatures of the parent phases. It is thus possible to manufacture a solid-state memory which requires lower current for recording and erasing data and has a greater rewriting cycle number.
摘要翻译：制造固态存储器的本发明的至少一个实施例的方法是制造固态存储器的方法，该固态存储器包括其电特性通过相变而变化的记录膜，该方法包括：通过形成两层或更多层的叠层来形成记录膜，从而提供超晶格结构，每个层具有显示固 - 相相变的母相，记录膜在不是的温度下形成低于母相结晶温度的最高温度。因此，可以制造需要较低电流记录和擦除数据的固态存储器，并具有更大的重写周期数。

5. 发明授权

US08396335B2 Solid-state memory and semiconductor device 失效
标题翻译：固态存储器和半导体器件
公开(公告)号：US08396335B2
公开(公告)日：2013-03-12
申请号：US12690711
申请日：2010-01-20
申请人： Junji Tominaga , Takayuki Shima , Alexander Kolobov , Paul Fons , Robert Simpson
发明人： Junji Tominaga , Takayuki Shima , Alexander Kolobov , Paul Fons , Robert Simpson
IPC分类号： H01L45/00
CPC分类号： H01L45/1625 , H01L45/06 , H01L45/1233 , H01L45/144
摘要： A solid memory may include a recording layer including Ge, Sb and Te as major components. The recording layer may include a superlattice. The recording layer may include multi-layers each having a parent phase showing a phase transformation in solid-states, the phase transformation causing change in electrical property of the recording layer. The recording layer may include an Sb2Te3 layer that includes at least one period of a first lamination of a first Te-atomic layer, a first Sb-atomic layer, a second Te-atomic layer, a second Sb-atomic layer, and a third Te-atomic layer in these order, a GeTe layer that includes at least one period of a second lamination of a fourth Te-atomic layer and a Ge-atomic layer, and an Sb layer that includes a plurality of Sb-atomic layers.
摘要翻译：固体存储器可以包括包括Ge，Sb和Te作为主要成分的记录层。记录层可以包括超晶格。记录层可以包括多层，每层具有显示固态相变的母相，该相变引起记录层的电性能的变化。记录层可以包括Sb2Te3层，其包括第一Te原子层，第一Sb原子层，第二Te原子层，第二Sb原子层和第三Te原子层的第一层叠的至少一个周期 Te原子层，包括第四Te原子层和Ge原子层的第二层叠的至少一个周期的GeTe层和包括多个Sb原子层的Sb层。

6. 发明授权

US08530314B2 Solid-state memory manufacturing method 有权
标题翻译：固态存储器制造方法
公开(公告)号：US08530314B2
公开(公告)日：2013-09-10
申请号：US12998482
申请日：2009-09-28
申请人： Junji Tominaga , Takayuki Shima , Alexander Kolobov , Paul Fons , Robert Simpson , Reiko Kondo
发明人： Junji Tominaga , Takayuki Shima , Alexander Kolobov , Paul Fons , Robert Simpson , Reiko Kondo
IPC分类号： H01L21/336
CPC分类号： H01L45/1625 , H01L45/06 , H01L45/144
摘要： A method of at least one embodiment of the present invention of manufacturing a solid-state memory is a method of manufacturing a solid-state memory, the solid-state memory including a recording film whose electric characteristics are varied by phase transformation, the method including: forming the recording film by forming a laminate of two or more layers so that a superlattice structure is provided, each of the layers having a parent phase which shows solid-to-solid phase-transformation, the recording film being formed at a temperature not lower than a temperature highest among crystallization temperatures of the parent phases. It is thus possible to manufacture a solid-state memory which requires lower current for recording and erasing data and has a greater rewriting cycle number.
摘要翻译：制造固态存储器的本发明的至少一个实施例的方法是制造固态存储器的方法，该固态存储器包括其电特性通过相变而变化的记录膜，该方法包括：通过形成两层或更多层的叠层来形成记录膜，从而提供超晶格结构，每个层具有显示固 - 相相变的母相，记录膜在不是的温度下形成低于母相结晶温度的最高温度。因此，可以制造需要较低电流记录和擦除数据的固态存储器，并具有更大的重写周期数。

7. 发明申请

US20100181548A1 SOLID-STATE MEMORY AND SEMICONDUCTOR DEVICE 失效
标题翻译：固体存储器和半导体器件
公开(公告)号：US20100181548A1
公开(公告)日：2010-07-22
申请号：US12690711
申请日：2010-01-20
申请人： Junji Tominaga , Takayuki Shima , Alexander Kolobov , Paul Fons , Robert Simpson
发明人： Junji Tominaga , Takayuki Shima , Alexander Kolobov , Paul Fons , Robert Simpson
IPC分类号： H01L45/00 , H01L29/18
CPC分类号： H01L45/1625 , H01L45/06 , H01L45/1233 , H01L45/144
摘要： A solid memory may include a recording layer including Ge, Sb and Te as major components. The recording layer may include a superlattice. The recording layer may include multi-layers each having a parent phase showing a phase transformation in solid-states, the phase transformation causing change in electrical property of the recording layer. The recording layer may include an Sb2Te3 layer that includes at least one period of a first lamination of a first Te-atomic layer, a first Sb-atomic layer, a second Te-atomic layer, a second Sb-atomic layer, and a third Te-atomic layer in these order, a GeTe layer that includes at least one period of a second lamination of a fourth Te-atomic layer and a Ge-atomic layer, and an Sb layer that includes a plurality of Sb-atomic layers.
摘要翻译：固体存储器可以包括包括Ge，Sb和Te作为主要成分的记录层。记录层可以包括超晶格。记录层可以包括多层，每层具有显示固态相变的母相，该相变引起记录层的电性能的变化。记录层可以包括Sb 2 Te 3层，其包括第一Te原子层，第一Sb原子层，第二Te原子层，第二Sb原子层和第三Te原子层的第一层叠的至少一个周期 Te原子层，包括第四Te原子层和Ge原子层的第二层叠的至少一个周期的GeTe层和包括多个Sb原子层的Sb层。

8. 发明申请

US20110315942A1 SOLID-STATE MEMORY 有权
标题翻译：固态存储器
公开(公告)号：US20110315942A1
公开(公告)日：2011-12-29
申请号：US13138545
申请日：2010-02-24
申请人： Junji Tominaga , Paul Fons , Alexander Kolobov
发明人： Junji Tominaga , Paul Fons , Alexander Kolobov
IPC分类号： H01L45/00
CPC分类号： G11C13/0004 , H01L45/065 , H01L45/1233 , H01L45/148 , H01L45/1625
摘要： A solid-state memory that requires a lower current during recording and erasing data and can repeatedly rewrite data an increased number of times. In at least one example embodiment, the solid-state memory includes a recording layer that includes a laminated structure in which electric properties are changed in response to a phase separation. The laminated structure includes a film containing an Sb atom(s) and a film containing a Ge atom(s), which films constitute a superlattice structure. In the laminated structure, phase separation of the film containing the Sb atom and the film containing the Ge atom allows data to be recorded and erased efficiently.
摘要翻译：固态存储器在记录和擦除数据期间需要较低的电流，并可以重复地重写数据次数。在至少一个示例性实施例中，固态存储器包括记录层，其包括电性能响应于相分离而改变的叠层结构。层叠结构包括含有Sb原子的膜和含有Ge原子的膜，该膜构成超晶格结构。在层叠结构中，含有Sb原子的膜和含有锗原子的膜的相分离允许有效地记录和擦除数据。

9. 发明授权

US09129673B2 Superlattice recording layer for a phase change memory 有权
标题翻译：用于相变存储器的超晶格记录层
公开(公告)号：US09129673B2
公开(公告)日：2015-09-08
申请号：US13138545
申请日：2010-02-24
申请人： Junji Tominaga , Paul Fons , Alexander Kolobov
发明人： Junji Tominaga , Paul Fons , Alexander Kolobov
IPC分类号： H01L45/00 , G11C13/00
CPC分类号： G11C13/0004 , H01L45/065 , H01L45/1233 , H01L45/148 , H01L45/1625
摘要： A solid-state memory that requires a lower current during recording and erasing data and can repeatedly rewrite data an increased number of times. In at least one example embodiment, the solid-state memory includes a recording layer that includes a laminated structure in which electric properties are changed in response to a phase separation. The laminated structure includes a film containing an Sb atom(s) and a film containing a Ge atom(s), which films constitute a superlattice structure. In the laminated structure, phase separation of the film containing the Sb atom and the film containing the Ge atom allows data to be recorded and erased efficiently.
摘要翻译：固态存储器在记录和擦除数据期间需要较低的电流，并可以重复地重写数据次数。在至少一个示例性实施例中，固态存储器包括记录层，其包括电性能响应于相分离而改变的叠层结构。层叠结构包括含有Sb原子的膜和含有Ge原子的膜，该膜构成超晶格结构。在层叠结构中，含有Sb原子的膜和含有锗原子的膜的相分离允许有效地记录和擦除数据。

10. 发明授权

US06674098B1 ZnO compound semiconductor light emitting element 失效
标题翻译： ZnO化合物半导体发光元件
公开(公告)号：US06674098B1
公开(公告)日：2004-01-06
申请号：US10031931
申请日：2002-01-25
申请人： Shigeru Niki , Paul Fons , Kakuya Iwata , Tetsuhiro Tanabe , Hidemi Takasu , Ken Nakahara
发明人： Shigeru Niki , Paul Fons , Kakuya Iwata , Tetsuhiro Tanabe , Hidemi Takasu , Ken Nakahara
IPC分类号： H01L2715
CPC分类号： H01L33/28 , H01L33/0087 , H01S5/021 , H01S5/32308 , H01S5/32341 , H01S5/327
摘要： A light emitting device includes a silicon substrate (1), a silicon nitride film (2) formed on the surface of the silicon substrate (1), at least an n-type layer (3), (4) and a p-type layer (6), (7) which are formed on the silicon nitride film (2) and also which are made of a ZnO based compound semiconductor, and a semiconductor layer lamination (11) in which layers are laminated to form a light emitting layer. Preferably this silicon nitride film (2) is formed by thermal treatment conducted in an atmosphere containing nitrogen such as an ammonium gas. Also, in another embodiment, a light emitting device is formed by growing a ZnO based compound semiconductor layer on a main face of a sapphire substrate, the main face being perpendicular to the C-face thereof. As a result, it is possible to obtain a device using a ZnO based compound with high properties such as an LED very excellent in crystallinity and having a high light emitting efficiency.
摘要翻译：发光器件包括：硅衬底（1），形成在硅衬底（1）的表面上的氮化硅膜（2），至少n型层（3），（4）和p型形成在氮化硅膜（2）上并且由ZnO基化合物半导体制成的层（6），（7）和层叠层以形成发光层的半导体层层叠体。优选地，该氮化硅膜（2）通过在含氮气体的气氛中进行热处理而形成。此外，在另一实施例中，通过在蓝宝石衬底的主面上生长ZnO基化合物半导体层，主面垂直于其C面而形成发光器件。结果，可以获得使用具有高性能的ZnO基化合物的器件，例如非常优异的结晶度并且具有高发光效率的LED。

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