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    • 2. 发明授权
    • Image reading apparatus with transport device control
    • 具有运输设备控制的图像读取装置
    • US09001397B2
    • 2015-04-07
    • US13112766
    • 2011-05-20
    • Norikazu SakaiKazunori Sato
    • Norikazu SakaiKazunori Sato
    • H04N1/04H04N1/12H04N1/203H04N1/407H04N1/10H04N1/193
    • H04N1/121H04N1/1013H04N1/1225H04N1/193H04N1/2032H04N1/4076H04N2201/044H04N2201/0456
    • An image reading apparatus includes an apparatus body; a transport device that is openable and closable; an image reading unit disposed in one of the apparatus body and the transport device and reading an image of the document transported by the transport device; a member to be read that is disposed in the other of the apparatus body and the transport device at a position opposite the image reading unit when the transport device is closed, the member to be read being read by the image reading unit; and a control unit that causes the image reading unit to read the member to be read at a predetermined time, and if the transport device is open at the predetermined time, causes the image reading unit to read the member to be read when the document is transported by the transport device.
    • 图像读取装置包括:装置本体; 一种可开启和关闭的运输设备; 图像读取单元,其设置在所述装置本体和所述输送装置的一个中,并读取由所述输送装置输送的所述原稿的图像; 要被读取的构件,当传送装置关闭时,在与图像读取单元相对的位置处设置在装置本体和传送装置中的另一个中,待读取的构件被图像读取单元读取; 以及控制单元,其使图像读取单元在预定时间读取要读取的构件,并且如果传输设备在预定时间打开,则当文档是文档是时,图像读取单元读取要读取的构件 由运输设备运输。
    • 5. 发明申请
    • MEMORY SYSTEM
    • 记忆系统
    • US20110060866A1
    • 2011-03-10
    • US12821669
    • 2010-06-23
    • Shinji KawanoKazunori SatoHitoshi ShimonoEriko Chiba
    • Shinji KawanoKazunori SatoHitoshi ShimonoEriko Chiba
    • G06F12/00G06F12/02G06F12/10
    • G06F12/0607G06F12/0246G06F2212/7202G06F2212/7208
    • According to one embodiment, a memory system includes a first memory chip includes a first temporary memory and a first block, a second memory chip includes a second temporary memory and a second block, and a memory controller that controls writing of logical pages to the first and second memory chips. The memory controller forms a second unit having the same page number as the first unit by the first temporary memory and the lowermost physical page in the first block, forms a third unit having the same page number as the first unit by the second temporary memory and the lowermost physical page in the second block, and writes the logical pages by an interleave operation in order of the second unit, the third unit, the first unit in the first block, and the first unit in the second block.
    • 根据一个实施例,存储器系统包括第一存储器芯片,其包括第一临时存储器和第一块,第二存储器芯片包括第二临时存储器和第二块,以及存储器控制器,其控制逻辑页面写入到第一存储器 和第二存储器芯片。 存储器控制器通过第一临时存储器和第一块中的最低物理页面形成具有与第一单元相同的页码的第二单元,由第二临时存储器形成具有与第一单元相同的页码的第三单元, 第二块中的最低物理页,并且通过第二单元,第三单元,第一块中的第一单元和第二块中的第一单元的顺序的交错操作来写入逻辑页。
    • 7. 发明申请
    • Transparent ferromagnetic alkali/chalcogenide compound comprising solid solution of transition metal or rare earth metal and method of regulating ferromagnetism thereof
    • 包含过渡金属或稀土金属固溶体的透明铁磁性碱/硫族化合物及其铁磁性的调节方法
    • US20060231789A1
    • 2006-10-19
    • US10554866
    • 2004-03-12
    • Hiroshi YoshidaMasayoshi SeikeKazunori SatoAkira Yanase
    • Hiroshi YoshidaMasayoshi SeikeKazunori SatoAkira Yanase
    • C01B17/20H01F1/00
    • G02F1/0036H01F1/0009H01F1/055H01F1/402
    • Disclosed is a ferromagnetic alkali chalcogen compound capable of providing a completely-spin-polarized transparent ferromagnetic material using an alkali chalcogen compound having light-transparency, and a method of adjusting ferromagnetic properties thereof. The transparent ferromagnetic alkali chalcogenide comprises an alkali chalcogen compound which has an anti-fluorite structure and contains at least one metal element selected from a 3d transition metal element group consisting of Ti, V, Cr, Mn, Fe, Co, Ni and Cu; a 4d transition metal element group consisting of Zr, Nb, Mo, Tc, Ru and Rh; a 5d transition metal element group consisting of Hf, Ta, W, Os, Re and Ir; and a lanthanum-series rare-earth element group consisting of Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu. The selected metal element is incorporated in the alkali chalcogen compound in the form of a solid solution to provide a ferromagnetic characteristic thereto. The ferromagnetic properties are adjusted through control of valence states based, for example, on adjustment of a concentration of each of the metal elements, selection of a combination of two or more of the metal elements, and/or addition of an acceptor and a donor.
    • 公开了一种能够使用具有透光性的碱金属硫化物化合物提供完全自旋极化的透明铁磁材料的铁磁碱金属硫族化合物及其铁磁性能的调节方法。 透明铁磁性碱金属硫属元素包含具有防萤石结构并含有至少一种选自由Ti,V,Cr,Mn,Fe,Co,Ni和Cu组成的3d过渡金属元素组中的至少一种金属元素的碱金属硫化物化合物; 由Zr,Nb,Mo,Tc,Ru和Rh组成的4d过渡金属元素组; 由Hf,Ta,W,Os,Re和Ir组成的5d过渡金属元素; 以及由Ce,Pr,Nd,Pm,Sm,Eu,Gd,Tb,Dy,Ho,Er,Tm,Yb和Lu组成的镧系稀土元素基。 所选择的金属元素以固溶体的形式掺入碱金属硫化物化合物中以提供其铁磁特性。 通过例如调节每种金属元素的浓度,选择两种或更多种金属元素的组合,和/或添加受体和供体来调节价态的铁磁性质。 。