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1. 发明申请

US20110012121A1 THIN FILM TRANSISTOR IN WHICH AN INTERLAYER INSULATING FILM COMPRISES TWO DISTINCT LAYERS OF INSULATING MATERIAL 有权
标题翻译：薄膜绝缘膜的薄膜晶体管包含绝缘材料的两个不同层
公开(公告)号：US20110012121A1
公开(公告)日：2011-01-20
申请号：US12887865
申请日：2010-09-22
申请人： KAZUNORI INOUE , Harumi Murakami , Toshio Araki , Nobuaki Ishiga
发明人： KAZUNORI INOUE , Harumi Murakami , Toshio Araki , Nobuaki Ishiga
IPC分类号： H01L33/08
CPC分类号： G02F1/1341 , G02F1/1345 , G02F1/136213 , G02F2201/121 , H01L27/124 , H01L27/1248
摘要： A display apparatus including a TFT array substrate on which TFTs are formed in an array, a counter substrate disposed so as to face the TFT array substrate, and a sealing pattern for adhering the TFT array substrate and the counter substrate to each other, wherein the counter substrate has a counter electrode, and the TFT array substrate has a first conductive layer, a first insulating film formed on the first conductive layer, a second conductive layer disposed so as to intersect the first conductive layer via the first insulating film, a second insulating film formed on the second conductive layer and having at least two layers, and common electrode wiring provided below the sealing pattern and electrically connected to the counter electrode by the sealing pattern, and the sealing pattern overlaps the second conductive layer via the second insulating film.
摘要翻译：一种显示装置，包括阵列中形成有TFT的TFT阵列基板，与TFT阵列基板相对配置的对置基板和用于将TFT阵列基板和对置基板粘合的密封图案，其中，相对基板具有对电极，TFT阵列基板具有第一导电层，形成在第一导电层上的第一绝缘膜，经由第一绝缘膜与第一导电层相交的第二导电层，第二导电层形成在第二导电层上并且具有至少两层的绝缘膜，以及设置在密封图案下方并通过密封图案电连接到对电极的公共电极布线，并且密封图案经由第二绝缘膜与第二导电层重叠。

2. 发明授权

US07816693B2 Thin film transistor in which an interlayer insulating film comprises two distinct layers of insulating material 有权
标题翻译：薄膜晶体管，其中层间绝缘膜包括两个不同的绝缘材料层
公开(公告)号：US07816693B2
公开(公告)日：2010-10-19
申请号：US11526768
申请日：2006-09-26
申请人： Kazunori Inoue , Harumi Murakami , Toshio Araki , Nobuaki Ishiga
发明人： Kazunori Inoue , Harumi Murakami , Toshio Araki , Nobuaki Ishiga
IPC分类号： H01L29/18 , H01L27/15 , G02F1/1333 , G02F1/1335 , G02F1/1339
CPC分类号： G02F1/1341 , G02F1/1345 , G02F1/136213 , G02F2201/121 , H01L27/124 , H01L27/1248
摘要： According to an aspect of the present invention, there is provided a display apparatus including a TFT array substrate on which TFTs are formed in an array, a counter substrate disposed so as to face the TFT array substrate, and a sealing pattern for adhering the TFT array substrate and the counter substrate to each other, wherein the counter substrate comprises a counter electrode, and the TFT array substrate comprises a first conductive layer, a first insulating film formed on the first conductive layer, a second conductive layer disposed so as to intersect the first conductive layer via the first insulating film, a second insulating film formed on the second conductive layer and having at least two layers, and common electrode wiring provided below the sealing pattern and electrically connected to the counter electrode by the sealing pattern, and the sealing pattern overlaps the second conductive layer via the second insulating film.
摘要翻译：根据本发明的一个方面，提供一种显示装置，包括：阵列中形成有TFT的TFT阵列基板;与TFT阵列基板相对配置的对置基板;以及用于将TFT 阵列基板和对置基板彼此相对，其中所述对向基板包括对电极，并且所述TFT阵列基板包括第一导电层，形成在所述第一导电层上的第一绝缘膜，设置成相交的第二导电层通过第一绝缘膜的第一导电层，形成在第二导电层上并具有至少两层的第二绝缘膜，以及设置在密封图案下方并通过密封图案电连接到对电极的公共电极布线，以及密封图案经由第二绝缘膜与第二导电层重叠。

3. 发明授权

US08039852B2 Thin film transistor for a liquid crystal device in which a sealing pattern is electrically connected to a common electrode wiring 有权
标题翻译：用于液晶装置的薄膜晶体管，其中密封图案与公共电极布线电连接
公开(公告)号：US08039852B2
公开(公告)日：2011-10-18
申请号：US12887865
申请日：2010-09-22
申请人： Kazunori Inoue , Harumi Murakami , Toshio Araki , Nobuaki Ishiga
发明人： Kazunori Inoue , Harumi Murakami , Toshio Araki , Nobuaki Ishiga
IPC分类号： H01L29/18 , H01L33/00 , H01L27/118 , H01L23/52 , H01L27/12 , H01L25/04 , H01L25/065
CPC分类号： G02F1/1341 , G02F1/1345 , G02F1/136213 , G02F2201/121 , H01L27/124 , H01L27/1248
摘要： A display apparatus including a TFT array substrate on which TFTs are formed in an array, a counter substrate disposed so as to face the TFT array substrate, and a sealing pattern for adhering the TFT array substrate and the counter substrate to each other, wherein the counter substrate has a counter electrode, and the TFT array substrate has a first conductive layer, a first insulating film formed on the first conductive layer, a second conductive layer disposed so as to intersect the first conductive layer via the first insulating film, a second insulating film formed on the second conductive layer and having at least two layers, and common electrode wiring provided below the sealing pattern and electrically connected to the counter electrode by the sealing pattern, and the sealing pattern overlaps the second conductive layer via the second insulating film.
摘要翻译：一种显示装置，包括阵列中形成有TFT的TFT阵列基板，与TFT阵列基板相对配置的对置基板和用于将TFT阵列基板和对置基板粘合的密封图案，其中，相对基板具有对电极，TFT阵列基板具有第一导电层，形成在第一导电层上的第一绝缘膜，经由第一绝缘膜与第一导电层相交的第二导电层，第二导电层形成在第二导电层上并且具有至少两层的绝缘膜，以及设置在密封图案下方并通过密封图案电连接到对电极的公共电极布线，并且密封图案经由第二绝缘膜与第二导电层重叠。

4. 发明申请

US20070069211A1 Display apparatus and manufacturing method thereof 有权
标题翻译：显示装置及其制造方法
公开(公告)号：US20070069211A1
公开(公告)日：2007-03-29
申请号：US11526768
申请日：2006-09-26
申请人： Kazunori Inoue , Harumi Murakami , Toshio Araki , Nobuaki Ishiga
发明人： Kazunori Inoue , Harumi Murakami , Toshio Araki , Nobuaki Ishiga
IPC分类号： H01L29/04
CPC分类号： G02F1/1341 , G02F1/1345 , G02F1/136213 , G02F2201/121 , H01L27/124 , H01L27/1248
摘要： According to an aspect of the present invention, there is provided a display apparatus including a TFT array substrate on which TFTs are formed in an array, a counter substrate disposed so as to face the TFT array substrate, and a sealing pattern for adhering the TFT array substrate and the counter substrate to each other, wherein the counter substrate comprises a counter electrode, and the TFT array substrate comprises a first conductive layer, a first insulating film formed on the first conductive layer, a second conductive layer disposed so as to intersect the first conductive layer via the first insulating film, a second insulating film formed on the second conductive layer and having at least two layers, and common electrode wiring provided below the sealing pattern and electrically connected to the counter electrode by the sealing pattern, and the sealing pattern overlaps the second conductive layer via the second insulating film.
摘要翻译：根据本发明的一个方面，提供一种显示装置，包括：阵列中形成有TFT的TFT阵列基板;与TFT阵列基板相对配置的对置基板;以及用于将TFT 阵列基板和对置基板彼此相对，其中所述对向基板包括对电极，并且所述TFT阵列基板包括第一导电层，形成在所述第一导电层上的第一绝缘膜，设置成相交的第二导电层通过第一绝缘膜的第一导电层，形成在第二导电层上并具有至少两层的第二绝缘膜，以及设置在密封图案下方并通过密封图案电连接到对电极的公共电极布线，以及密封图案经由第二绝缘膜与第二导电层重叠。

5. 发明授权

US07400365B2 Method for manufacturing a thin film transistor array substrate for a liquid crystal display device 有权
标题翻译：液晶显示装置用薄膜晶体管阵列基板的制造方法
公开(公告)号：US07400365B2
公开(公告)日：2008-07-15
申请号：US10900607
申请日：2004-07-28
申请人： Fumihiro Gotoh , Nobuaki Ishiga , Toshio Araki , Kazunori Inoue , Hiroyasu Itoh , Eiji Shibata , Masanao Nabeshima
发明人： Fumihiro Gotoh , Nobuaki Ishiga , Toshio Araki , Kazunori Inoue , Hiroyasu Itoh , Eiji Shibata , Masanao Nabeshima
IPC分类号： G02F1/136 , G02F1/1345
CPC分类号： H01L29/66765 , G02F1/1368 , G02F2001/136295 , H01L27/12 , H01L29/4908
摘要： A method for manufacturing thin film transistor array substrate for a liquid crystal display device-includes:—(a) forming a first metal thin film layer on a insulating substrate and forming a gate wiring and a gate electrode by a first photolithography. (b) forming a gate insulating film layer, a semiconductor film layer, an ohmic contact film layer and a second metal thin film layer, and forming the thin film transistor by a second photolithography, (c) forming an interlayer insulating film, and forming a pixel contact hole, a first contact hole and a second contact hole by a third photolithography, and (d) forming a transparent conductive film, and forming a pixel electrode by a fourth photolithography. The first metal thin film has a two-layered structure comprising a first layer made of aluminum or aluminum alloy and a second layer located on said first layer, and the second metal thin film is formed of an alloy mainly containing molybdenum.
摘要翻译：一种用于制造液晶显示装置的薄膜晶体管阵列基板的方法，包括：（a）在绝缘基板上形成第一金属薄膜层，并通过第一光刻形成栅极布线和栅电极，（b）形成栅极绝缘膜层，半导体膜层，欧姆接触膜层和第二金属薄膜层，通过第二光刻法形成薄膜晶体管，（c）形成层间绝缘膜，形成像素接触孔，第一接触孔和第二接触孔，以及（d）形成透明导电膜，并通过第四光刻形成像素电极。第一金属薄膜具有包括由铝或铝合金制成的第一层和位于所述第一层上的第二层的第二金属薄膜的二层结构，第二金属薄膜由主要含有钼的合金形成。

6. 发明申请

US20050024549A1 Method for manufacturing thin film transistor array 有权
标题翻译：制造薄膜晶体管阵列的方法
公开(公告)号：US20050024549A1
公开(公告)日：2005-02-03
申请号：US10900607
申请日：2004-07-28
申请人： Fumihiro Gotoh , Nobuaki Ishiga , Toshio Araki , Kazunori Inoue , Hiroyasu Itoh , Eiji Shibata , Masanao Nabeshima
发明人： Fumihiro Gotoh , Nobuaki Ishiga , Toshio Araki , Kazunori Inoue , Hiroyasu Itoh , Eiji Shibata , Masanao Nabeshima
IPC分类号： G02F1/136 , G02F1/1362 , G02F1/1368 , H01L21/28 , H01L21/336 , H01L27/12 , H01L29/417 , H01L29/423 , H01L29/49 , H01L29/786
CPC分类号： H01L29/66765 , G02F1/1368 , G02F2001/136295 , H01L27/12 , H01L29/4908
摘要： A manufacturing method of TFT array substrate of an LCD includes step A of forming gate wiring and a gate electrode by subjecting a first metal thin film to a photolithography process; step B of forming semiconductor active film by subjecting a gate insulating film to photolithograhy; step C of forming a source wiring, and source and drain electrodes by subjecting a second metal thin film to a photolithography; step D of forming an interlayer insulating film, thereafter forming a contact hole by subjecting the interlayer insulating film to photolithography; and step E of forming a pixel electrode by subjecting a transparent conductive film to photolithography where the second metal thin film is composed of an alloy containing Mo as a main component. The step B and C are replaced by a step of forming a gate insulating film and a second metal thin film, thereafter forming a TFT by a photolithography.
摘要翻译： LCD的TFT阵列基板的制造方法包括通过对第一金属薄膜进行光刻工艺来形成栅极布线和栅电极的步骤A; 通过对栅极绝缘膜进行光蚀刻来形成半导体活性膜的步骤B; 通过使第二金属薄膜进行光刻，形成源极布线的步骤C和源极和漏极电极; 步骤D形成层间绝缘膜，然后通过使层间绝缘膜进行光刻而形成接触孔; 以及通过使透明导电膜进行光刻而形成像素电极的步骤E，其中第二金属薄膜由以Mo为主要成分的合金构成。步骤B和C由形成栅绝缘膜和第二金属薄膜的步骤代替，然后通过光刻形成TFT。

7. 发明授权

US08031283B2 Active matrix substrate and method of manufacturing the same 有权
标题翻译：有源矩阵基板及其制造方法
公开(公告)号：US08031283B2
公开(公告)日：2011-10-04
申请号：US12353480
申请日：2009-01-14
申请人： Toshio Araki , Osamu Miyakawa , Nobuaki Ishiga , Shingo Nagano
发明人： Toshio Araki , Osamu Miyakawa , Nobuaki Ishiga , Shingo Nagano
IPC分类号： G02F1/136
CPC分类号： G02F1/1362 , G02F2201/123
摘要： An active matrix substrate according to one aspect of the present invention is a TFT array substrate including a TFT. The active matrix substrate includes a gate signal line electrically connected to a gate electrode of the TFT, a first insulating film formed above the gate signal line, an auxiliary capacitance electrode formed above the first insulating film and supplied with a common potential, a second insulating film formed above the auxiliary capacitance electrode, a source signal line formed above the second insulating film and electrically connected to a source electrode of the TFT, a third insulating film formed above the source signal line, and a pixel electrode formed above the third insulating film so that the pixel electrode overlaps with a part of the auxiliary capacitance electrode.
摘要翻译：根据本发明的一个方面的有源矩阵基板是包括TFT的TFT阵列基板。有源矩阵基板包括电连接到TFT的栅电极的栅极信号线，形成在栅极信号线上方的第一绝缘膜，形成在第一绝缘膜上方并被提供公共电位的辅助电容电极，第二绝缘形成在辅助电容电极上的膜，形成在第二绝缘膜上方并与TFT的源电极电连接的源极信号线，形成在源极信号线上方的第三绝缘膜，以及形成在第三绝缘膜上方的像素电极使得像素电极与辅助电容电极的一部分重叠。

8. 发明授权

US08159749B2 Antireflection coating and display device 有权
标题翻译：防反射涂层和显示装置
公开(公告)号：US08159749B2
公开(公告)日：2012-04-17
申请号：US12545217
申请日：2009-08-21
申请人： Kazunori Inoue , Naoki Tsumura , Nobuaki Ishiga , Takeshi Ono , Naoki Nakagawa , Masafumi Agari , Yusuke Yamagata , Kensuke Nagayama
发明人： Kazunori Inoue , Naoki Tsumura , Nobuaki Ishiga , Takeshi Ono , Naoki Nakagawa , Masafumi Agari , Yusuke Yamagata , Kensuke Nagayama
IPC分类号： G02B5/28 , G02F1/1335
CPC分类号： G02B1/116 , C08K3/08 , C09D1/00 , C09D7/61 , C23C14/0036 , C23C14/0641 , C23C14/18 , G02F1/133502 , Y10T428/265
摘要： An antireflection coating is formed on a transparent substrate and includes an Al film having a transmittance of lower than 10% at a wavelength of 550 nm with a thickness of 25 nm and predominantly composed of aluminum (Al), and an Al—N film formed in at least one of an upper layer and a lower layer of the Al film, having a transmittance of equal to or higher than 10% at a wavelength of 550 nm with a thickness of 25 nm, predominantly composed of Al and at least containing a nitrogen (N) element as an additive. A specific resistance of the antireflection coating is equal to or lower than 1.0×10−2 O·cm, and a reflectance of a surface of the Al—N film is equal to or lower than 50% in a visible light region.
摘要翻译：在透明基板上形成防反射膜，在550nm波长下透射率低于10％的Al膜，厚度为25nm，主要由铝（Al）构成，形成Al-N膜在Al膜的上层和下层中的至少一层中，在550nm的波长下具有等于或高于10％的透射率，厚度为25nm，主要由Al组成并且至少含有氮（N）元素作为添加剂。抗反射涂层的电阻率为1.0×10 -2 O·cm以下，Al-N膜的表面的可反射率在可见光区域为50％以下。

9. 发明申请

US20080012016A1 TRANSPARENT CONDUCTIVE FILM, SEMICONDUCTOR DEVICE AND ACTIVE MATRIX DISPLAY UNIT 有权
标题翻译：透明导电膜，半导体器件和主动矩阵显示单元
公开(公告)号：US20080012016A1
公开(公告)日：2008-01-17
申请号：US11767217
申请日：2007-06-22
申请人： Kazunori INOUE , Nobuaki Ishiga , Kensuke Nagayama , Toru Takeguchi , Kazumasa Kawase
发明人： Kazunori INOUE , Nobuaki Ishiga , Kensuke Nagayama , Toru Takeguchi , Kazumasa Kawase
IPC分类号： H01L33/00 , H01B1/02
CPC分类号： H01J29/28 , G02F1/13439 , G02F1/13458 , H01L27/3244 , H01L51/5206 , H01L51/5218 , H01L51/5234 , H01L2227/323
摘要： A transparent conductive film substantially made from In2O3, SnO2 and ZnO, having a molar ratio In/(In+Sn+Zn) of 0.65 to 0.8 and also a molar ratio Sn/Zn of 1 or less: The transparent conductive film has a favorable electric contact property with an electrode or line made from Al or Al alloy film. Further, a semiconductor device having an electrode or line made from the transparent conductive film has high reliability and productivity.
摘要翻译：基本上由In 2 N 3 O 3，SnO 2和ZnO组成的透明导电膜，其具有In /（In + Sn + Zn ）为0.65〜0.8，Sn / Zn的摩尔比为1以下：透明导电膜与由Al或Al合金膜形成的电极或线具有良好的电接触性。此外，具有由透明导电膜制成的电极或线的半导体器件具有高的可靠性和生产率。

10. 发明申请

US20070284742A1 SEMICONDUCTOR DEVICE AND ACTIVE MATRIX DISPLAY DEVICE 有权
标题翻译：半导体器件和有源矩阵显示器件
公开(公告)号：US20070284742A1
公开(公告)日：2007-12-13
申请号：US11741193
申请日：2007-04-27
申请人： Kazunori Inoue , Nobuaki Ishiga , Kensuke Nagayama , Kazumasa Kawase
发明人： Kazunori Inoue , Nobuaki Ishiga , Kensuke Nagayama , Kazumasa Kawase
IPC分类号： H01L23/48
CPC分类号： H01L29/4908 , G02F2001/136295 , H01L27/124 , H01L29/458
摘要： A semiconductor device includes a semiconductor layer, an Al alloy film electrically connected to the semiconductor layer, and a transparent electrode layer directly contacting with the Al alloy film at least over an insulating substrate. The Al alloy film includes one or more kinds of elements selected from Fe, Co and Ni in total of 0.5 to 10 mol %, and a remaining substantially comprises Al.
摘要翻译：半导体器件包括半导体层，与半导体层电连接的Al合金膜，以及至少在绝缘基板上与Al合金膜直接接触的透明电极层。 Al合金膜包括选自Fe，Co和Ni中的一种或多种元素，总计为0.5至10mol％，其余基本上包含Al。

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