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1. 发明授权

US08435417B2 Method of manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US08435417B2
公开(公告)日：2013-05-07
申请号：US12827259
申请日：2010-06-30
申请人： Kazunari Nakata , Kaoru Motonami , Atsushi Narazaki , Ayumu Onoyama , Shigeto Honda , Ryoichi Fujii , Tomoya Hirata
发明人： Kazunari Nakata , Kaoru Motonami , Atsushi Narazaki , Ayumu Onoyama , Shigeto Honda , Ryoichi Fujii , Tomoya Hirata
IPC分类号： B44C1/22
CPC分类号： H01L21/3083 , H01L21/304 , H01L21/6835 , H01L21/6836 , H01L2221/68327 , H01L2221/6834 , H01L2924/0002 , H01L2924/30105 , H01L2924/00
摘要： A passivation film having a predetermined width from an outer peripheral end portion toward an inner side and extending along the outer peripheral end portion is formed on a front surface of a semiconductor substrate. An outer peripheral end surface orthogonal to the front surface and a rear surface is formed by grinding the outer peripheral end portion of the semiconductor substrate. A thickness of the semiconductor substrate is reduced to a predetermined thickness by grinding the rear surface. The ground rear surface is etched by discharging a mixed acid onto the rear surface while rotating the semiconductor substrate with the rear surface facing upward, to remove a fracture layer. Thereby, chipping or cracking of the semiconductor substrate is suppressed.
摘要翻译：在半导体衬底的前表面上形成有从外周端向内侧具有预定宽度且沿外周端部延伸的钝化膜。通过研磨半导体衬底的外周端部形成与前表面和后表面正交的外周端面。通过研磨后表面将半导体衬底的厚度减小到预定厚度。通过将混合酸排放到后表面上同时使后表面朝上的半导体衬底旋转来蚀刻地面后表面，以除去断裂层。由此，能够抑制半导体基板的切削或破裂。

2. 发明申请

US20110059612A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20110059612A1
公开(公告)日：2011-03-10
申请号：US12827259
申请日：2010-06-30
申请人： Kazunari NAKATA , Kaoru Motonami , Atsushi Narazaki , Ayumu Onoyama , Shigeto Honda , Ryoichi Fujii , Tomoya Hirata
发明人： Kazunari NAKATA , Kaoru Motonami , Atsushi Narazaki , Ayumu Onoyama , Shigeto Honda , Ryoichi Fujii , Tomoya Hirata
IPC分类号： H01L21/302
CPC分类号： H01L21/3083 , H01L21/304 , H01L21/6835 , H01L21/6836 , H01L2221/68327 , H01L2221/6834 , H01L2924/0002 , H01L2924/30105 , H01L2924/00
摘要： A passivation film having a predetermined width from an outer peripheral end portion toward an inner side and extending along the outer peripheral end portion is formed on a front surface of a semiconductor substrate. An outer peripheral end surface orthogonal to the front surface and a rear surface is formed by grinding the outer peripheral end portion of the semiconductor substrate. A thickness of the semiconductor substrate is reduced to a predetermined thickness by grinding the rear surface. The ground rear surface is etched by discharging a mixed acid onto the rear surface while rotating the semiconductor substrate with the rear surface facing upward, to remove a fracture layer. Thereby, chipping or cracking of the semiconductor substrate is suppressed.
摘要翻译：在半导体衬底的前表面上形成有从外周端向内侧具有预定宽度且沿外周端部延伸的钝化膜。通过研磨半导体衬底的外周端部形成与前表面和后表面正交的外周端面。通过研磨后表面将半导体衬底的厚度减小到预定厚度。通过将混合酸排放到后表面上同时使后表面朝上的半导体衬底旋转来蚀刻地面后表面，以除去断裂层。由此，能够抑制半导体基板的切削或破裂。

3. 发明授权

US07065238B2 Defect inspection method and defect inspection equipment 失效
公开(公告)号：US07065238B2
公开(公告)日：2006-06-20
申请号：US09948045
申请日：2001-09-07
申请人： Ayumu Onoyama , Koichi Sakurai , Kazuhiro Oka , Hiroyuki Ishii , Katsuhiro Fujiyoshi
发明人： Ayumu Onoyama , Koichi Sakurai , Kazuhiro Oka , Hiroyuki Ishii , Katsuhiro Fujiyoshi
IPC分类号： G06K9/00 , H04N7/18
CPC分类号： G01N21/95607 , G06T7/001 , G06T2207/30148
摘要： Transforming optical images of a portion including a normal conductor pattern having a surface roughness, a portion subjected to an inspection, and a reference portion to images of electric charges and picking up these as electric signals by an image pick-up device, rendering the optical image including the normal conductor pattern having the surface roughness to a pixel signal by the image pick-up device, controlling a light volume of the optical image so that the pixel signal is saturated or immediately before the saturation, picking up a pixel signal of the portion to be inspected under this light volume, obtaining a differential signal from a pixel signal picked up from the reference portion, and judging an existence of defect from the differential signal, so as to detect defects such as a hiatus of conductor, a short circuit, and a deposition of an extraneous matter on a wafer, on which the normal conductor pattern having the roughened surface, with a high accuracy in processes of forming films and etching in manufacturing a semiconductor device.

4. 发明授权

US06829047B2 Defect detection system 失效
标题翻译：缺陷检测系统
公开(公告)号：US06829047B2
公开(公告)日：2004-12-07
申请号：US10061235
申请日：2002-02-04
申请人： Tatsuya Fujii , Ayumu Onoyama , Koichi Sakurai
发明人： Tatsuya Fujii , Ayumu Onoyama , Koichi Sakurai
IPC分类号： G01N2100
CPC分类号： G01N21/95607 , G01N21/9501
摘要： A defect detection system to check any defect in the pattern to be checked by comparing a pattern to be checked with a reference pattern includes an edge detection means for detecting a pattern edge of the pattern to be checked by scanning a substrate by laser beams and detecting reflected light thereof. After the relative position between the substrate and the imaging means is adjusted so that the pattern edge of the pattern to be checked is substantially aligned with one side of CCD pixels, an image of the pattern to be checked is picked up. Therefore, the defect detection system corrects misalignment less than one pixel between a pattern to be checked and a reference pattern to prevent occurrence of a false defect.
摘要翻译：通过将待检查的图案与参考图案进行比较来检查要检查的图案中的任何缺陷的缺陷检测系统包括边缘检测装置，用于通过激光束扫描基板来检测要检查的图案的图案边缘，并且检测反射光。在调整基板和成像装置之间的相对位置使得要检查的图案的图案边缘基本上与CCD像素的一侧对准的情况下，拾取要检查的图案的图像。因此，缺陷检测系统校正小于待检查图案与参考图案之间的一个像素的不对准，以防止发生假缺陷。

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