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    • 4. 发明申请
    • Method of manufacturing semiconductor wafer
    • 制造半导体晶片的方法
    • US20050106840A1
    • 2005-05-19
    • US10986783
    • 2004-11-15
    • Kazuhisa Arai
    • Kazuhisa Arai
    • H01L21/28C08J5/12H01L21/00H01L21/30H01L21/301H01L21/304H01L21/31H01L21/46H01L21/58H01L21/68H01L21/683
    • H01L21/6835H01L21/304H01L2221/6834
    • A method of manufacturing a semiconductor wafer wherein a film is formed on a back surface of a starting semiconductor wafer formed with circuits in a front surface thereof. To prevent the semiconductor wafer from warping even when it is worked as very thin as 100 μm or below and to form the film uniformly on the back surface of the semiconductor wafer, the method includes a unification step of supporting the front surface of the semiconductor wafer on a support baseplate having a flat support surface, and then unifying the support baseplate and the semiconductor wafer with each other, a grinding work step of grinding the back surface of the semiconductor wafer to thin; and a film formation step of forming a film on the back surface of the semiconductor wafer with use of a film formation apparatus; wherein a protective tape capable of being tom off is stuck onto a back surface of the support baseplate at said unification step, so as to perform the subsequent grinding work step with the protective tape borne on the support baseplate; and a protective-tape tearing off and removal step of tearing off and removing the protective tape is carried out before performing said film formation step.
    • 一种制造半导体晶片的方法,其中在形成有前表面的电路的起始半导体晶片的背面上形成膜。 为了防止半导体晶片即使在非常薄的情况下作为100um或更低的工作,并且在半导体晶片的背面均匀地形成膜,该方法包括:支撑半导体晶片的前表面的统一步骤 在具有平坦的支撑表面的支撑基板上,然后使支撑基板和半导体晶片彼此均匀;磨削工作步骤,将半导体晶片的背面磨削成薄; 以及使用成膜装置在半导体晶片的背面形成膜的成膜工序; 其特征在于,在所述一体化步骤中,将能够被剥离的保护带粘贴到所述支撑基板的后表面上,以将所述保护带承载在所述支撑基板上进行后续的研磨加工步骤; 并且在进行所述成膜步骤之前,进行剥离除去保护胶带的保护带剥离除去步骤。
    • 5. 发明授权
    • Grinding machine and method
    • 研磨机及方法
    • US08142259B2
    • 2012-03-27
    • US12422674
    • 2009-04-13
    • Kazuhisa Arai
    • Kazuhisa Arai
    • B24B1/00B24B7/07
    • B24B1/00B24B7/228B24B37/04
    • A grinding machine includes a holding table adapted to hold a workpiece, a grinding unit operative to grind the workpiece held on the holding piece, and a grinding unit transfer mechanism operative to shift the grinding unit in a direction coming close to or moving away from the workpiece. The grinding unit includes a porous pad having fine pores opposed to the workpiece, a gel-like slurry storing portion provided on the porous pad so as to store a gel-like slurry therein, and a water supply unit to supply water between the porous pad and the workpiece. The porous pad contains relatively larger superabrasives at least at an outer circumferential portion. The fine pores of the porous pad have a diameter greater than that of relatively small superabrasives contained in the gel-like slurry.
    • 研磨机包括适于保持工件的保持台,可操作地研磨保持在保持件上的工件的研磨单元和用于使研磨单元沿接近或远离的方向移动的研磨单元传送机构 工件。 研磨单元包括具有与工件相对的细孔的多孔垫,设置在多孔垫上以便在其中储存凝胶状浆料的凝胶状浆料储存部分,以及在多孔垫之间供水的供水单元 和工件。 多孔垫至少在外周部分包含相对较大的超级磨料。 多孔垫的细孔的直径大于凝胶状浆料中所含的相对小的超级磨料的直径。
    • 9. 发明授权
    • Method of manufacturing semiconductor wafer
    • 制造半导体晶片的方法
    • US07183178B2
    • 2007-02-27
    • US10986783
    • 2004-11-15
    • Kazuhisa Arai
    • Kazuhisa Arai
    • H01L21/30H01L21/46
    • H01L21/6835H01L21/304H01L2221/6834
    • A method of manufacturing a semiconductor wafer wherein a film is formed on a back surface of a starting semiconductor wafer formed with circuits in a front surface thereof. To prevent the semiconductor wafer from warping even when it is worked as very thin as 100 μm or below and to form the film uniformly on the back surface of the semiconductor wafer, the method includes a unification step of supporting the front surface of the semiconductor wafer on a support baseplate having a flat support surface, and then unifying the support baseplate and the semiconductor wafer with each other, a grinding work step of grinding the back surface of the semiconductor wafer to thin; and a film formation step of forming a film on the back surface of the semiconductor wafer with use of a film formation apparatus; wherein a protective tape capable of being tom off is stuck onto a back surface of the support baseplate at said unification step, so as to perform the subsequent grinding work step with the protective tape borne on the support baseplate; and a protective-tape tearing off and removal step of tearing off and removing the protective tape is carried out before performing said film formation step.
    • 一种制造半导体晶片的方法,其中在形成有前表面的电路的起始半导体晶片的背面上形成膜。 为了防止半导体晶片即使在非常薄的情况下作为100um或更低的工作,并且在半导体晶片的背面均匀地形成膜,该方法包括:支撑半导体晶片的前表面的统一步骤 在具有平坦的支撑表面的支撑基板上,然后使支撑基板和半导体晶片彼此均匀;磨削工作步骤,将半导体晶片的背面磨削成薄; 以及使用成膜装置在半导体晶片的背面形成膜的成膜工序; 其特征在于,在所述一体化步骤中,将能够被剥离的保护带粘贴到所述支撑基板的后表面上,以将所述保护带承载在所述支撑基板上进行后续的研磨加工步骤; 并且在进行所述成膜步骤之前,进行剥离除去保护胶带的保护带剥离除去步骤。