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    • 7. 发明申请
    • Electron-emitting device, electron source, picture display unit and manufacturing process therefor
    • 电子发射器件,电子源,图像显示单元及其制造工艺
    • US20050269936A1
    • 2005-12-08
    • US11138472
    • 2005-05-27
    • Kunio Takada
    • Kunio Takada
    • H01J1/316H01J1/62H01J9/02H01J31/12H01J63/04
    • H01J9/027H01J1/316H01J31/127H01J2201/3165
    • An object of the present invention is to prevent a device portion from being electrostatically charged with the use of the high resistivity film, and at the same time prevent a leak current passing the device portion due to an existing high resistivity film, in an electron source with the use of a surface-conduction electron-emitting device. This process for manufacturing the electron-emitting device comprises the steps of: forming an electroconductive thin film 4 astride device electrodes; forming the high resistivity film 7 in a region except the electroconductive thin film 4 and a perimeter thereof; subjecting the electroconductive thin film 4 to forming processing, to form a fissure 5 therein; and depositing a carbon film 6 inside the fissure 5 and in a region reaching the high resistivity film 7 from the edge of the fissure 5, by applying voltage between device electrodes 2 and 3 under an atmosphere containing a carbon compound.
    • 本发明的目的是通过使用高电阻率膜来防止器件部分被静电充电,并且同时防止在电子源中由于现有的高电阻率膜而导致的器件部分漏电流 使用表面传导电子发射器件。 用于制造电子发射器件的该方法包括以下步骤:形成横跨器件电极的导电薄膜; 在导电薄膜4以外的区域及其周边形成高电阻率膜7; 对导电薄膜4进行成形处理,在其中形成裂缝5; 并且在裂缝5内部和从裂缝5的边缘到达高电阻率膜7的区域中,通过在含有碳化合物的气氛下在器件电极2和3之间施加电压而沉积碳膜6。
    • 8. 发明授权
    • Large-depth underground drainage facility and method of running same
    • 大型地下排水设施及其运行方式
    • US6102618A
    • 2000-08-15
    • US272094
    • 1999-03-18
    • Kunio TakadaKenji OtaniMasayuki YamadaSaburo MaruSumio SudoSadashi Tanaka
    • Kunio TakadaKenji OtaniMasayuki YamadaSaburo MaruSumio SudoSadashi Tanaka
    • E02B11/00E03F1/00E03F5/22F04D15/00F04D29/44F04D29/60E02B13/00
    • E02B11/00E03F1/00E03F5/22F04D15/0072F04D29/448F04D29/605F05B2260/96F05C2225/08
    • An underground water channel is provided in an underground of a large depth, and rain water and the like flow into this underground channel from flood control channels, conduits and rivers through vertical shafts. A pump well of a pump station is connected to a downstream end of the underground channel, and water flowing into the pump well is discharged by a pump to a discharge tank. The pump is disposed generally at a medium water level of the underground channel, and a lowest water level L.W.L enabling draining is the medium water level of the underground channel. In an open channel flow operation of an open channel-closed channel mixed flow operation, water level of the underground channel is maintained at the lowest water level L.W.L, so that the underground channel is in an open channel condition. In the closed channel flow operation, the underground channel is fully filled with water, and further water level rises into the vertical shafts, so that the underground channel is in a closed channel condition. By changing an outflow factor in accordance with rainfall patterns, the rate of flow into the vertical shafts can be accurately estimated, so that the large-depth underground drainage facility can be run in a stable manner.
    • 深水地下设有地下水道,雨水等通过垂直井从防洪通道,管道和河流流入该地下通道。 泵站的泵井连接到地下通道的下游端,流入泵井的水通过泵排出到排放罐。 泵通常设置在地下通道的中等水位,并且能够排水的最低水位L.W.L是地下通道的中等水位。 在开放通道封闭通道混合流动操作的开放通道流动操作中,地下通道的水位保持在最低水位L.W.L,使得地下通道处于开放通道状态。 在封闭通道流动操作中,地下通道充满水,水位进一步升高至竖井内,使地下通道处于封闭通道状态。 通过根据降雨模式改变流出因子,可以准确估计垂直井的流量,从而可以稳定运行大型地下排水设施。