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1. 发明申请

US20130069142A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20130069142A1
公开(公告)日：2013-03-21
申请号：US13423633
申请日：2012-03-19
申请人： Kazuhiro MATSUO , Masayuki TANAKA , Hirofumi IIKAWA
发明人： Kazuhiro MATSUO , Masayuki TANAKA , Hirofumi IIKAWA
IPC分类号： H01L29/792 , H01L21/762
CPC分类号： H01L29/42324 , H01L21/28273 , H01L21/76232 , H01L27/11521 , H01L29/66825 , H01L29/7881
摘要： A semiconductor device includes an element isolation region having an element isolation insulating film therein; an active region delineated by the element isolation region; agate insulating film formed in the active region; a charge storage layer above the gate insulating film; and an interelectrode insulating film. The interelectrode insulating film is formed in a first region above an upper surface of the element isolation insulating film, a second region along a sidewall of the charge storage layer, and a third region above an upper surface of the charge storage layer. The interelectrode insulating film includes a stack of a first silicon oxide film, a first silicon nitride film, a second silicon oxide film, and a second silicon nitride film. A control electrode layer is formed above the interelectrode insulating film. The second silicon oxide film is thinner in the first region than in the third region.
摘要翻译：半导体器件包括其中具有元件隔离绝缘膜的元件隔离区域; 由元件隔离区域划定的活动区域; 形成在活性区域中的玛瑙绝缘膜; 栅极绝缘膜上方的电荷存储层; 和电极间绝缘膜。电极间绝缘膜形成在元件隔离绝缘膜的上表面上方的第一区域，沿着电荷存储层的侧壁的第二区域和电荷存储层的上表面上方的第三区域。电极间绝缘膜包括第一氧化硅膜，第一氮化硅膜，第二氧化硅膜和第二氮化硅膜的堆叠。在电极间绝缘膜的上方形成控制电极层。第二氧化硅膜在第一区域比在第三区域薄。

2. 发明申请

US20120126299A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME 失效
标题翻译：半导体器件及其制造方法
公开(公告)号：US20120126299A1
公开(公告)日：2012-05-24
申请号：US13237486
申请日：2011-09-20
申请人： Kazuhiro MATSUO , Masayuki Tanaka , Hirofumi Iikawa
发明人： Kazuhiro MATSUO , Masayuki Tanaka , Hirofumi Iikawa
IPC分类号： H01L27/04 , H01L21/28 , H01L29/792
CPC分类号： H01L27/11521 , H01L21/28273 , H01L29/513 , H01L29/7883
摘要： A semiconductor device is disclosed. The semiconductor device includes a semiconductor substrate; a gate insulating film formed above the semiconductor substrate; a charge storage layer formed above the gate insulating film; a multilayered interelectrode insulating film formed in a first region above an upper surface portion of the element isolation insulating film, a second region above a sidewall portion of the charge storage layer and a third region above an upper surface portion of the charge storage layer, the interelectrode insulating film including a stack of an upper silicon oxide film, a middle silicon nitride film, and a lower silicon oxide film; a control gate electrode formed above the interelectrode insulating film; wherein the middle silicon nitride film is thinner in the third region than in the second region and the upper silicon oxide film is thicker in the third region than in the second region.
摘要翻译：公开了一种半导体器件。半导体器件包括半导体衬底; 形成在所述半导体衬底上的栅极绝缘膜; 形成在栅极绝缘膜上方的电荷存储层; 形成在元件隔离绝缘膜的上表面部分上方的第一区域中的多层电极间绝缘膜，电荷存储层的侧壁部分上方的第二区域和电荷存储层的上表面部分上方的第三区域，电极间绝缘膜，其包括上氧化硅膜，中间氮化硅膜和下氧化硅膜的堆叠; 形成在电极间绝缘膜之上的控制栅电极; 其中中间氮化硅膜在第三区域比第二区域薄，上部氧化硅膜在第三区域比第二区域厚。

3. 发明申请

US20090189213A1 NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD OF FABRICATING THE SAME 失效
标题翻译：非易失性半导体存储器件及其制造方法
公开(公告)号：US20090189213A1
公开(公告)日：2009-07-30
申请号：US12354200
申请日：2009-01-15
申请人： Kazuhiro MATSUO , Masayuki TANAKA , Atsuhiro SUZUKI
发明人： Kazuhiro MATSUO , Masayuki TANAKA , Atsuhiro SUZUKI
IPC分类号： H01L29/792 , H01L21/283 , H01L21/764
CPC分类号： H01L29/42336 , H01L27/115 , H01L27/11521 , H01L29/94
摘要： A nonvolatile semiconductor memory device includes a semiconductor substrate having a plurality of active regions separately formed by a plurality of trenches formed in a surface of the substrate at predetermined intervals, a first gate insulating film formed on an upper surface of the substrate corresponding to each active region, a gate electrode of a memory cell transistor formed by depositing an electrical charge storage layer formed on an upper surface of the gate insulating film, a second gate insulating film and a control gate insulating film sequentially, an element isolation insulating film buried in each trench and formed from a coating type oxide film, and an insulating film formed inside each trench on a boundary between the semiconductor substrate and the element isolation insulating film, the insulating film containing nontransition metal atoms and having a film thickness not more than 5 Å.
摘要翻译：非易失性半导体存储器件包括：半导体衬底，具有由以形成在衬底的表面中的预定间隔分开形成的多个沟槽分开形成的多个有源区;形成在衬底的上表面上的第一栅极绝缘膜，区域，通过依次沉积形成在栅极绝缘膜的上表面上的电荷存储层，第二栅极绝缘膜和控制栅极绝缘膜而形成的存储单元晶体管的栅电极，每个区域中埋设的元件隔离绝缘膜沟槽，并且由涂覆型氧化物膜形成，并且在半导体衬底和元件隔离绝缘膜之间的边界上形成在每个沟槽内的绝缘膜，所述绝缘膜包含非转移金属原子并且具有不大于5的膜厚度。

4. 发明申请

US20100226046A1 DISK DRIVE DEVICE FOR ROTATING A DISK 失效
标题翻译：用于旋转盘的磁盘驱动器件
公开(公告)号：US20100226046A1
公开(公告)日：2010-09-09
申请号：US12616093
申请日：2009-11-10
申请人： Hiroshi SAITO , Kazuhiro MATSUO
发明人： Hiroshi SAITO , Kazuhiro MATSUO
IPC分类号： G11B5/48
CPC分类号： G11B17/028
摘要： In the brushless motor, a hub has a cylindrical separating wall in between a yoke and two magnetic recording disks. The yoke is affixed to the inner surface of the separating wall of the hub using both a press-fit and adhesion. A first convex portion and a second convex portion are formed on the inner surface of the separating wall, and the yoke is pressed against these convex portions in the case where the yoke is press-fit. The first convex portion and the second convex portion are formed in a ring shape around the rotational axis of the motor. The diameter of the first convex portion is less than the diameter of the second convex portion.
摘要翻译：在无刷电动机中，毂在磁轭和两个磁记录盘之间具有圆柱形分隔壁。使用压配合和粘合将轭固定到轮毂的分隔壁的内表面。在分隔壁的内表面上形成有第一凸起部分和第二凸起部分，并且在压配磁轭的情况下，磁轭被压靠在这些凸部上。第一凸部和第二凸部围绕电机的旋转轴线形成为环状。第一凸部的直径小于第二凸部的直径。

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