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    • 7. 发明申请
    • Method and apparatus for diagnosing fault in semiconductor device
    • 用于诊断半导体器件故障的方法和装置
    • US20060006886A1
    • 2006-01-12
    • US11038485
    • 2005-01-21
    • Masatsugu YamashitaKodo KawaseMasayoshi TonouchiToshihiro KiwaKiyoshi Nikawa
    • Masatsugu YamashitaKodo KawaseMasayoshi TonouchiToshihiro KiwaKiyoshi Nikawa
    • G01R31/305
    • G01R31/311
    • An apparatus for diagnosing a fault in a semiconductor device includes an laser applying unit, a detection/conversion unit, and a fault diagnosis unit. The semiconductor device is held at a state where no bias voltage is applied thereto. The laser applying unit then applies a pulse laser beam having a predetermined wavelength to the semiconductor device so as to two-dimensionally scan the semiconductor device with the pulse laser beam. The detection/conversion unit detects an electromagnetic wave generated from a laser applied position in the semiconductor device, and converts the detected electromagnetic wave into a time-varying voltage signal that corresponds to a time-varying amplitude of an electric field of the electromagnetic wave. The fault diagnosis unit derives an electric field distribution in the semiconductor device on the basis of the time-varying voltage signal to perform fault diagnosis on the semiconductor device.
    • 用于诊断半导体器件中的故障的装置包括激光施加单元,检测/转换单元和故障诊断单元。 半导体器件保持在不施加偏置电压的状态。 激光施加单元然后将具有预定波长的脉冲激光束施加到半导体器件,以便用脉冲激光束对半导体器件进行二维扫描。 检测/转换单元检测从半导体器件中的激光施加位置产生的电磁波,并将检测到的电磁波转换成对应于电磁波的电场的时变幅度的时变电压信号。 故障诊断单元根据时变电压信号,在半导体装置中导出电场分布,对半导体装置进行故障诊断。
    • 10. 发明授权
    • Method and apparatus for diagnosing fault in semiconductor device
    • 用于诊断半导体器件故障的方法和装置
    • US07173447B2
    • 2007-02-06
    • US11038485
    • 2005-01-21
    • Masatsugu YamashitaKodo KawaseMasayoshi TonouchiToshihiro KiwaKiyoshi Nikawa
    • Masatsugu YamashitaKodo KawaseMasayoshi TonouchiToshihiro KiwaKiyoshi Nikawa
    • G01R31/26
    • G01R31/311
    • An apparatus for diagnosing a fault in a semiconductor device includes an laser applying unit, a detection/conversion unit, and a fault diagnosis unit. The semiconductor device is held at a state where no bias voltage is applied thereto. The laser applying unit then applies a pulse laser beam having a predetermined wavelength to the semiconductor device so as to two-dimensionally scan the semiconductor device with the pulse laser beam. The detection/conversion unit detects an electromagnetic wave generated from a laser applied position in the semiconductor device, and converts the detected electromagnetic wave into a time-varying voltage signal that corresponds to a time-varying amplitude of an electric field of the electromagnetic wave. The fault diagnosis unit derives an electric field distribution in the semiconductor device on the basis of the time-varying voltage signal to perform fault diagnosis on the semiconductor device.
    • 用于诊断半导体器件中的故障的装置包括激光施加单元,检测/转换单元和故障诊断单元。 半导体器件保持在不施加偏置电压的状态。 激光施加单元然后将具有预定波长的脉冲激光束施加到半导体器件,以便用脉冲激光束对半导体器件进行二维扫描。 检测/转换单元检测从半导体器件中的激光施加位置产生的电磁波,并将检测到的电磁波转换成对应于电磁波的电场的时变幅度的时变电压信号。 故障诊断单元根据时变电压信号,在半导体装置中导出电场分布,对半导体装置进行故障诊断。