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1. 发明申请

US20080277696A1 Lateral Junction Field Effect Transistor and Method of Manufacturing The Same 有权
标题翻译：横向结场效应晶体管及其制造方法
公开(公告)号：US20080277696A1
公开(公告)日：2008-11-13
申请号：US12179320
申请日：2008-07-24
申请人： Kazuhiro Fujikawa , Shin Harada , Kenichi Hirotsu , Satoshi Hatsukawa , Takashi Hoshino , Hiroyuki Matsunami , Tsunenobu Kimoto
发明人： Kazuhiro Fujikawa , Shin Harada , Kenichi Hirotsu , Satoshi Hatsukawa , Takashi Hoshino , Hiroyuki Matsunami , Tsunenobu Kimoto
IPC分类号： H01L29/808
CPC分类号： H01L29/0634 , H01L29/1058 , H01L29/1066 , H01L29/42316 , H01L29/66893 , H01L29/808
摘要： A lateral junction field effect transistor includes a first gate electrode layer arranged in a third semiconductor layer between source/drain region layers, having a lower surface extending on the second semiconductor layer, and doped with p-type impurities more heavily than the second semiconductor layer, and a second gate electrode layer arranged in a fifth semiconductor layer between the source/drain region layers, having a lower surface extending on a fourth semiconductor layer, having substantially the same concentration of p-type impurities as the first gate electrode layer, and having the same potential as the first gate electrode layer. Thereby, the lateral junction field effect transistor has a structure, which can reduce an on-resistance while maintaining good breakdown voltage properties.
摘要翻译：横向结型场效应晶体管包括布置在源/漏区域之间的第三半导体层中的第一栅电极层，具有在第二半导体层上延伸的下表面，并且掺杂有比第二半导体层更重的p型杂质以及布置在源极/漏极区域之间的第五半导体层中的第二栅极电极层，具有在第四半导体层上延伸的下表面，具有与第一栅极电极层基本相同的p型杂质浓度，以及具有与第一栅极电极层相同的电位。因此，横向结型场效应晶体管具有可以在保持良好的击穿电压特性的同时降低导通电阻的结构。

2. 发明申请

US20090315082A1 LATERAL JUNCTION FIELD EFFECT TRANSISTOR AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：横向连接场效应晶体管及其制造方法
公开(公告)号：US20090315082A1
公开(公告)日：2009-12-24
申请号：US12552212
申请日：2009-09-01
申请人： Kazuhiro Fujikawa , Shin Harada , Kenichi Hirotsu , Satoshi Hatsukawa , Takashi Hoshino , Hiroyuki Matsunami , Tsunenobu Kimoto
发明人： Kazuhiro Fujikawa , Shin Harada , Kenichi Hirotsu , Satoshi Hatsukawa , Takashi Hoshino , Hiroyuki Matsunami , Tsunenobu Kimoto
IPC分类号： H01L29/808
CPC分类号： H01L29/0634 , H01L29/1058 , H01L29/1066 , H01L29/42316 , H01L29/66893 , H01L29/808
摘要： A lateral junction field effect transistor includes a first gate electrode layer arranged in a third semiconductor layer between source/drain region layers, having a lower surface extending on the second semiconductor layer, and doped with p-type impurities more heavily than the second semiconductor layer, and a second gate electrode layer arranged in a fifth semiconductor layer between the source/drain region layers, having a lower surface extending on a fourth semiconductor layer, having substantially the same concentration of p-type impurities as the first gate electrode layer, and having the same potential as the first gate electrode layer. Thereby, the lateral junction field effect transistor has a structure, which can reduce an on-resistance while maintaining good breakdown voltage properties.
摘要翻译：横向结型场效应晶体管包括布置在源极/漏极区之间的第三半导体层中的第一栅电极层，具有在第二半导体层上延伸的下表面，并且掺杂有比第二半导体层更重的p型杂质以及布置在源极/漏极区域之间的第五半导体层中的第二栅极电极层，具有在第四半导体层上延伸的下表面，具有与第一栅极电极层基本相同的p型杂质浓度，以及具有与第一栅极电极层相同的电位。因此，横向结型场效应晶体管具有可以在保持良好的击穿电压特性的同时降低导通电阻的结构。

3. 发明申请

US20060202238A1 Lateral junction field effect transistor and method of manufacturing the same 有权
公开(公告)号：US20060202238A1
公开(公告)日：2006-09-14
申请号：US11402701
申请日：2006-04-11
申请人： Kazuhiro Fujikawa , Shin Harada , Kenichi Hirotsu , Satoshi Hatsukawa , Takashi Hoshino , Hiroyuki Matsunami , Tsunenobu Kimoto
发明人： Kazuhiro Fujikawa , Shin Harada , Kenichi Hirotsu , Satoshi Hatsukawa , Takashi Hoshino , Hiroyuki Matsunami , Tsunenobu Kimoto
IPC分类号： H01L31/112
CPC分类号： H01L29/0634 , H01L29/1058 , H01L29/1066 , H01L29/42316 , H01L29/66893 , H01L29/808
摘要： A lateral junction field effect transistor includes a first gate electrode layer arranged in a third semiconductor layer between source/drain region layers, having a lower surface extending on the second semiconductor layer, and doped with p-type impurities more heavily than the second semiconductor layer, and a second gate electrode layer arranged in a fifth semiconductor layer between the source/drain region layers, having a lower surface extending on a fourth semiconductor layer, having substantially the same concentration of p-type impurities as the first gate electrode layer, and having the same potential as the first gate electrode layer. Thereby, the lateral junction field effect transistor has a structure, which can reduce an on-resistance while maintaining good breakdown voltage properties.

4. 发明授权

US07671388B2 Lateral junction field effect transistor and method of manufacturing the same 有权
公开(公告)号：US07671388B2
公开(公告)日：2010-03-02
申请号：US12552212
申请日：2009-09-01
申请人： Kazuhiro Fujikawa , Shin Harada , Kenichi Hirotsu , Satoshi Hatsukawa , Takashi Hoshino , Hiroyuki Matsunami , Tsunenobu Kimoto
发明人： Kazuhiro Fujikawa , Shin Harada , Kenichi Hirotsu , Satoshi Hatsukawa , Takashi Hoshino , Hiroyuki Matsunami , Tsunenobu Kimoto
IPC分类号： H01L29/78
CPC分类号： H01L29/0634 , H01L29/1058 , H01L29/1066 , H01L29/42316 , H01L29/66893 , H01L29/808
摘要： A lateral junction field effect transistor includes a first gate electrode layer arranged in a third semiconductor layer between source/drain region layers, having a lower surface extending on the second semiconductor layer, and doped with p-type impurities more heavily than the second semiconductor layer, and a second gate electrode layer arranged in a fifth semiconductor layer between the source/drain region layers, having a lower surface extending on a fourth semiconductor layer, having substantially the same concentration of p-type impurities as the first gate electrode layer, and having the same potential as the first gate electrode layer. Thereby, the lateral junction field effect transistor has a structure, which can reduce an on-resistance while maintaining good breakdown voltage properties.

5. 发明授权

US07420232B2 Lateral junction field effect transistor and method of manufacturing the same 有权
标题翻译：横向场效应晶体管及其制造方法
公开(公告)号：US07420232B2
公开(公告)日：2008-09-02
申请号：US11402701
申请日：2006-04-11
申请人： Kazuhiro Fujikawa , Shin Harada , Kenichi Hirotsu , Satoshi Hatsukawa , Takashi Hoshino , Hiroyuki Matsunami , Tsunenobu Kimoto
发明人： Kazuhiro Fujikawa , Shin Harada , Kenichi Hirotsu , Satoshi Hatsukawa , Takashi Hoshino , Hiroyuki Matsunami , Tsunenobu Kimoto
IPC分类号： H01L29/80 , H01L31/112
CPC分类号： H01L29/0634 , H01L29/1058 , H01L29/1066 , H01L29/42316 , H01L29/66893 , H01L29/808
摘要： A lateral junction field effect transistor includes a first gate electrode layer arranged in a third semiconductor layer between source/drain region layers, having a lower surface extending on the second semiconductor layer, and doped with p-type impurities more heavily than the second semiconductor layer, and a second gate electrode layer arranged in a fifth semiconductor layer between the source/drain region layers, having a lower surface extending on a fourth semiconductor layer, having substantially the same concentration of p-type impurities as the first gate electrode layer, and having the same potential as the first gate electrode layer. Thereby, the lateral junction field effect transistor has a structure, which can reduce an on-resistance while maintaining good breakdown voltage properties.
摘要翻译：横向结型场效应晶体管包括布置在源/漏区域之间的第三半导体层中的第一栅电极层，具有在第二半导体层上延伸的下表面，并且掺杂有比第二半导体层更重的p型杂质以及布置在源极/漏极区域之间的第五半导体层中的第二栅极电极层，具有在第四半导体层上延伸的下表面，具有与第一栅极电极层基本相同的p型杂质浓度，以及具有与第一栅极电极层相同的电位。因此，横向结型场效应晶体管具有可以在保持良好的击穿电压特性的同时降低导通电阻的结构。

6. 发明授权

US07671387B2 Lateral junction field effect transistor and method of manufacturing the same 有权
标题翻译：横向场效应晶体管及其制造方法
公开(公告)号：US07671387B2
公开(公告)日：2010-03-02
申请号：US12179320
申请日：2008-07-24
申请人： Kazuhiro Fujikawa , Shin Harada , Kenichi Hirotsu , Satoshi Hatsukawa , Takashi Hoshino , Hiroyuki Matsunami , Tsunenobu Kimoto
发明人： Kazuhiro Fujikawa , Shin Harada , Kenichi Hirotsu , Satoshi Hatsukawa , Takashi Hoshino , Hiroyuki Matsunami , Tsunenobu Kimoto
IPC分类号： H01L29/80
CPC分类号： H01L29/0634 , H01L29/1058 , H01L29/1066 , H01L29/42316 , H01L29/66893 , H01L29/808
摘要： A lateral junction field effect transistor includes a first gate electrode layer arranged in a third semiconductor layer between source/drain region layers, having a lower surface extending on the second semiconductor layer, and doped with p-type impurities more heavily than the second semiconductor layer, and a second gate electrode layer arranged in a fifth semiconductor layer between the source/drain region layers, having a lower surface extending on a fourth semiconductor layer, having substantially the same concentration of p-type impurities as the first gate electrode layer, and having the same potential as the first gate electrode layer. Thereby, the lateral junction field effect transistor has a structure, which can reduce an on-resistance while maintaining good breakdown voltage properties.
摘要翻译：横向结型场效应晶体管包括布置在源/漏区域之间的第三半导体层中的第一栅电极层，具有在第二半导体层上延伸的下表面，并且掺杂有比第二半导体层更重的p型杂质以及布置在源极/漏极区域之间的第五半导体层中的第二栅极电极层，具有在第四半导体层上延伸的下表面，具有与第一栅极电极层基本相同的p型杂质浓度，以及具有与第一栅极电极层相同的电位。因此，横向结型场效应晶体管具有可以在保持良好的击穿电压特性的同时降低导通电阻的结构。

7. 发明授权

US07049644B2 Lateral junction field effect transistor and method of manufacturing the same 有权
标题翻译：横向场效应晶体管及其制造方法
公开(公告)号：US07049644B2
公开(公告)日：2006-05-23
申请号：US10496040
申请日：2002-12-02
申请人： Kazuhiro Fujikawa , Shin Harada , Kenichi Hirotsu , Satoshi Hatsukawa , Takashi Hoshino , Hiroyuki Matsunami , Tsunenobu Kimoto
发明人： Kazuhiro Fujikawa , Shin Harada , Kenichi Hirotsu , Satoshi Hatsukawa , Takashi Hoshino , Hiroyuki Matsunami , Tsunenobu Kimoto
IPC分类号： H01L29/80 , H01L31/112
CPC分类号： H01L29/0634 , H01L29/1058 , H01L29/1066 , H01L29/42316 , H01L29/66893 , H01L29/808
摘要： A lateral junction field effect transistor includes a first gate electrode layer arranged in a third semiconductor layer between source/drain region layers, having a lower surface extending on the second semiconductor layer, and doped with p-type impurities more heavily than the second semiconductor layer, and a second gate electrode layer arranged in a fifth semiconductor layer between the source/drain region layers, having a lower surface extending on a fourth semiconductor layer, having substantially the same concentration of p-type impurities as the first gate electrode layer, and having the same potential as the first gate electrode layer. Thereby, the lateral junction field effect transistor has a structure, which can reduce an on-resistance while maintaining good breakdown voltage properties.
摘要翻译：横向结型场效应晶体管包括布置在源/漏区域之间的第三半导体层中的第一栅电极层，具有在第二半导体层上延伸的下表面，并且掺杂有比第二半导体层更重的p型杂质以及布置在源极/漏极区域之间的第五半导体层中的第二栅极电极层，具有在第四半导体层上延伸的下表面，具有与第一栅极电极层基本相同的p型杂质浓度，以及具有与第一栅极电极层相同的电位。因此，横向结型场效应晶体管具有可以在保持良好的击穿电压特性的同时降低导通电阻的结构。

8. 发明申请

US20050093017A1 Lateral junctiion field-effect transistor and its manufacturing method 有权
标题翻译：横向结合场效应晶体管及其制造方法
公开(公告)号：US20050093017A1
公开(公告)日：2005-05-05
申请号：US10496040
申请日：2002-12-02
申请人： Kazuhiro Fujikawa , Shin Harada , Kenichi Hirotsu , Satoshi Hatsukawa , Takashi Hoshino , Hiroyuki Matsunami , Tsunenobu Kimoto
发明人： Kazuhiro Fujikawa , Shin Harada , Kenichi Hirotsu , Satoshi Hatsukawa , Takashi Hoshino , Hiroyuki Matsunami , Tsunenobu Kimoto
IPC分类号： H01L21/337 , H01L29/808 , H01L29/51
CPC分类号： H01L29/0634 , H01L29/1058 , H01L29/1066 , H01L29/42316 , H01L29/66893 , H01L29/808
摘要： A lateral junction field effect transistor includes a first gate electrode layer (18A) arranged in a third semiconductor layer (13) between source/drain region layers (6, 8), having a lower surface extending on the second semiconductor layer (12), and doped with p-type impurities more heavily than the second semiconductor layer (12), and a second gate electrode layer (18B) arranged in a fifth semiconductor layer (15) between the source/drain region layers (6, 8), having a lower surface extending on a fourth semiconductor layer (14), having substantially the same concentration of p-type impurities as the first gate electrode layer (18A), and having the same potential as the first gate electrode layer (18A). Thereby, the lateral junction field effect transistor has a structure, which can reduce an on-resistance while maintaining good breakdown voltage properties.
摘要翻译：横向结型场效应晶体管包括布置在源极/漏极区域（6,8）之间的第三半导体层（13）中的第一栅极电极层（18A），其具有在第二半导体层（12）上延伸的下表面，并且掺杂有比第二半导体层（12）更重的p型杂质;以及布置在源极/漏极区域（6,8）之间的第五半导体层（15）中的第二栅电极层（18B）具有在第四半导体层（14）上延伸的下表面，其具有与第一栅极电极层（18A）大致相同的p型杂质浓度，并具有与第一栅电极层（18A）相同的电位）。因此，横向结型场效应晶体管具有可以在保持良好的击穿电压特性的同时降低导通电阻的结构。

9. 发明授权

US06870189B1 Pinch-off type vertical junction field effect transistor and method of manufacturing the same 失效
标题翻译：夹断型垂直结场效应晶体管及其制造方法
公开(公告)号：US06870189B1
公开(公告)日：2005-03-22
申请号：US10168265
申请日：2000-09-11
申请人： Shin Harada , Kenichi Hirotsu , Hiroyuki Matsunami , Tsunenobu Kimoto
发明人： Shin Harada , Kenichi Hirotsu , Hiroyuki Matsunami , Tsunenobu Kimoto
IPC分类号： H01L21/337 , H01L29/24 , H01L29/772 , H01L29/808 , H01L31/0312 , H01L29/80 , H01L31/112
CPC分类号： H01L29/0843 , H01L29/1058 , H01L29/1066 , H01L29/1608 , H01L29/66901 , H01L29/66909 , H01L29/7722 , H01L29/808 , H01L29/8083
摘要： A junction field effect transistor (JFET) is provided that is capable of a high voltage resistance, high current switching operation, that operates with a low loss, and that has little variation. This JFET is provided with a gate region (2) of a second conductivity type provided on a surface of a semiconductor substrate, a source region (1) of a first conductivity type, a channel region (10) of the first conductivity type that adjoins the source region, a confining region (5) of the second conductivity type that adjoins the gate region and confines the channel region, a drain region (3) of the first conductivity type provided on a reverse face, and a drift region (4) of the first conductivity type that continuously lies in a direction of thickness of the substrate from a channel to a drain. A concentration of an impurity of the first conductivity type in the drift region and the channel region is lower than a concentration of an impurity of the first conductivity type in the source region and the drain region and a concentration of an impurity of the second conductivity type in the confining region.
摘要翻译：提供了一种结型场效应晶体管（JFET），其具有能够以低损耗工作并且几乎没有变化的高电压电阻，高电流切换操作。该JFET设置有设置在半导体衬底的表面上的第二导电类型的栅极区域（2），第一导电类型的源极区域（1），第一导电类型的沟道区域（10）源极区域，邻接栅极区域并限制沟道区域的第二导电类型的约束区域（5），设置在反面上的第一导电类型的漏极区域（3）和漂移区域（4）的第一导电类型，其连续地位于从通道到漏极的衬底的厚度方向上。漂移区域和沟道区域中的第一导电类型的杂质的浓度低于源极区域和漏极区域中的第一导电类型的杂质浓度和第二导电类型的杂质浓度在限制区域。

10. 发明申请

US20060118813A1 Lateral junction field-effect transistor 有权
标题翻译：侧面场效应晶体管
公开(公告)号：US20060118813A1
公开(公告)日：2006-06-08
申请号：US11337143
申请日：2006-01-20
申请人： Shin Harada , Kenichi Hirotsu , Hiroyuki Matsunami , Tsunenobu Kimoto
发明人： Shin Harada , Kenichi Hirotsu , Hiroyuki Matsunami , Tsunenobu Kimoto
IPC分类号： H01L31/111
CPC分类号： H01L29/808 , H01L29/0623 , H01L29/1066 , H01L29/1608
摘要： A lateral JFET has a basic structure including an n-type semiconductor layer (3) formed of an n-type impurity region and a p-type semiconductor layer formed of a p-type impurity region on the n-type semiconductor layer (3). Moreover, in the p-type semiconductor layer, there are provided a p+-type gate region layer (7) extending into the n-type semiconductor layer (3) and containing p-type impurities of an impurity concentration higher than that of the n-type semiconductor layer (3) and an n+-type drain region layer (9) spaced from the p+-type gate region layer (7) by a predetermined distance and containing n-type impurities of an impurity concentration higher than that of the n-type semiconductor layer (3). With this structure, the lateral JFET can be provided that has an ON resistance further decreased while maintaining a high breakdown voltage performance.
摘要翻译：横向JFET具有包括由n型杂质区形成的n型半导体层（3）和在n型半导体层（3）上由p型杂质区形成的p型半导体层的基本结构，。此外，在p型半导体层中，设置延伸到n型半导体层（3）中并含有杂质的p型杂质的p +型栅极区域层（7）浓度高于n型半导体层（3）的浓度以及与p + +型栅极区域层间隔开的n + + +型漏极区域（9）（7）预定距离并且包含杂质浓度高于n型半导体层（3）的杂质浓度的n型杂质。利用这种结构，可以提供横向JFET，其具有进一步降低的导通电阻，同时保持高的击穿电压性能。

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